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IRFI3205PBF

Infineon Technologies IRFI3205PBF

Part Number:
IRFI3205PBF
Manufacturer:
Infineon Technologies
Ventron No:
2479389-IRFI3205PBF
Description:
MOSFET N-CH 55V 64A TO220FP
ECAD Model:
Datasheet:
IRFI3205PBF

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Specifications
Infineon Technologies IRFI3205PBF technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies IRFI3205PBF.
  • Factory Lead Time
    12 Weeks
  • Mount
    Through Hole
  • Mounting Type
    Through Hole
  • Package / Case
    TO-220-3 Full Pack
  • Number of Pins
    3
  • Transistor Element Material
    SILICON
  • Operating Temperature
    -55°C~175°C TJ
  • Packaging
    Tube
  • Series
    HEXFET®
  • Published
    1997
  • Part Status
    Active
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    3
  • Termination
    Through Hole
  • ECCN Code
    EAR99
  • Resistance
    8mOhm
  • Additional Feature
    AVALANCHE RATED, HIGH RELIABILITY, ULTRA LOW RESISTANCE
  • Subcategory
    FET General Purpose Power
  • Voltage - Rated DC
    55V
  • Technology
    MOSFET (Metal Oxide)
  • Current Rating
    64A
  • Number of Elements
    1
  • Power Dissipation-Max
    63W Tc
  • Element Configuration
    Single
  • Operating Mode
    ENHANCEMENT MODE
  • Power Dissipation
    63W
  • Case Connection
    ISOLATED
  • Turn On Delay Time
    14 ns
  • FET Type
    N-Channel
  • Transistor Application
    SWITCHING
  • Rds On (Max) @ Id, Vgs
    8m Ω @ 34A, 10V
  • Vgs(th) (Max) @ Id
    4V @ 250μA
  • Input Capacitance (Ciss) (Max) @ Vds
    4000pF @ 25V
  • Current - Continuous Drain (Id) @ 25°C
    64A Tc
  • Gate Charge (Qg) (Max) @ Vgs
    170nC @ 10V
  • Rise Time
    100ns
  • Drive Voltage (Max Rds On,Min Rds On)
    10V
  • Vgs (Max)
    ±20V
  • Fall Time (Typ)
    70 ns
  • Turn-Off Delay Time
    43 ns
  • Continuous Drain Current (ID)
    64A
  • Threshold Voltage
    4V
  • JEDEC-95 Code
    TO-220AB
  • Gate to Source Voltage (Vgs)
    20V
  • Drain Current-Max (Abs) (ID)
    56A
  • Drain to Source Breakdown Voltage
    55V
  • Dual Supply Voltage
    55V
  • Avalanche Energy Rating (Eas)
    480 mJ
  • Recovery Time
    170 ns
  • Isolation Voltage
    2kV
  • Nominal Vgs
    4 V
  • Height
    9.8mm
  • Length
    10.7442mm
  • Width
    4.826mm
  • REACH SVHC
    No SVHC
  • Radiation Hardening
    No
  • RoHS Status
    ROHS3 Compliant
  • Lead Free
    Lead Free
Description
IRFI3205PBF Description
IRFI3205PBF is a member of the fifth generation HEXFETs that are manufactured by Infineon Technologies based on advanced processing techniques. Based on these techniques, it is able to provide extremely low on-resistance per silicon area, fast switching speed, and ruggedized device design. As a result, it is extremely efficient and reliable for electronic designers to use in a broad range of applications.

IRFI3205PBF Features
Extremely low on-resistance per silicon area
Fast switching speed
Ruggedized device design
Ultralow on-state resistance
Available in the TO-220 Full-Pak package

IRFI3205PBF Applications
Synchronous rectification
Uninterruptible power supply
High-speed switching
IRFI3205PBF More Descriptions
MOSFET, Power;N-Ch;VDSS 55V;RDS(ON) 0.008Ohm;ID 64A;TO-220 Full-Pak;PD 63W;-55de
Single N-Channel 55 V 0.008 Ohm 170 nC HEXFET® Power Mosfet - TO-220-3FP
55V Single N-Channel HEXFET Power MOSFET in a TO-220 FullPak (Iso) package, FULLPAK220-3, RoHSInfineon SCT
Trans MOSFET N-CH 55V 64A 3-Pin(3 Tab) TO-220 Full-Pack - Rail/Tube
Power Field-Effect Transistor, 64A I(D), 55V, 0.008ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
Benefits: RoHS Compliant; Low RDS(on); Industry-leading quality; Dynamic dv/dt Rating; Fast Switching; Fully Avalanche Rated; 175C Operating Temperature
MOSFET, N, 55V, 56A, TO-220FP; Transistor Polarity:N Channel; Continuous Drain Current Id:64A; Drain Source Voltage Vds:55V; On Resistance Rds(on):8mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V; Power Dissipation Pd:63W; Transistor Case Style:TO-220FP; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:64A; Current Temperature:25°C; Full Power Rating Temperature:25°C; Isolation Voltage:2kV; Junction to Case Thermal Resistance A:2.4°C/W; Package / Case:TO-220FP; Power Dissipation Pd:63W; Power Dissipation Pd:63W; Pulse Current Idm:390A; Termination Type:Through Hole; Voltage Vds:55V; Voltage Vds Typ:55V; Voltage Vgs Max:4V; Voltage Vgs Rds on Measurement:10V
Product Comparison
The three parts on the right have similar specifications to IRFI3205PBF.
  • Image
    Part Number
    Manufacturer
    Factory Lead Time
    Mount
    Mounting Type
    Package / Case
    Number of Pins
    Transistor Element Material
    Operating Temperature
    Packaging
    Series
    Published
    Part Status
    Moisture Sensitivity Level (MSL)
    Number of Terminations
    Termination
    ECCN Code
    Resistance
    Additional Feature
    Subcategory
    Voltage - Rated DC
    Technology
    Current Rating
    Number of Elements
    Power Dissipation-Max
    Element Configuration
    Operating Mode
    Power Dissipation
    Case Connection
    Turn On Delay Time
    FET Type
    Transistor Application
    Rds On (Max) @ Id, Vgs
    Vgs(th) (Max) @ Id
    Input Capacitance (Ciss) (Max) @ Vds
    Current - Continuous Drain (Id) @ 25°C
    Gate Charge (Qg) (Max) @ Vgs
    Rise Time
    Drive Voltage (Max Rds On,Min Rds On)
    Vgs (Max)
    Fall Time (Typ)
    Turn-Off Delay Time
    Continuous Drain Current (ID)
    Threshold Voltage
    JEDEC-95 Code
    Gate to Source Voltage (Vgs)
    Drain Current-Max (Abs) (ID)
    Drain to Source Breakdown Voltage
    Dual Supply Voltage
    Avalanche Energy Rating (Eas)
    Recovery Time
    Isolation Voltage
    Nominal Vgs
    Height
    Length
    Width
    REACH SVHC
    Radiation Hardening
    RoHS Status
    Lead Free
    Surface Mount
    JESD-609 Code
    Terminal Finish
    Terminal Position
    Peak Reflow Temperature (Cel)
    Time@Peak Reflow Temperature-Max (s)
    JESD-30 Code
    Qualification Status
    Configuration
    Drain to Source Voltage (Vdss)
    Drain-source On Resistance-Max
    Pulsed Drain Current-Max (IDM)
    DS Breakdown Voltage-Min
    Supplier Device Package
    Weight
    Max Operating Temperature
    Min Operating Temperature
    Number of Channels
    Input Capacitance
    Drain to Source Resistance
    Rds On Max
    View Compare
  • IRFI3205PBF
    IRFI3205PBF
    Infineon Technologies
    12 Weeks
    Through Hole
    Through Hole
    TO-220-3 Full Pack
    3
    SILICON
    -55°C~175°C TJ
    Tube
    HEXFET®
    1997
    Active
    1 (Unlimited)
    3
    Through Hole
    EAR99
    8mOhm
    AVALANCHE RATED, HIGH RELIABILITY, ULTRA LOW RESISTANCE
    FET General Purpose Power
    55V
    MOSFET (Metal Oxide)
    64A
    1
    63W Tc
    Single
    ENHANCEMENT MODE
    63W
    ISOLATED
    14 ns
    N-Channel
    SWITCHING
    8m Ω @ 34A, 10V
    4V @ 250μA
    4000pF @ 25V
    64A Tc
    170nC @ 10V
    100ns
    10V
    ±20V
    70 ns
    43 ns
    64A
    4V
    TO-220AB
    20V
    56A
    55V
    55V
    480 mJ
    170 ns
    2kV
    4 V
    9.8mm
    10.7442mm
    4.826mm
    No SVHC
    No
    ROHS3 Compliant
    Lead Free
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • IRFI4905
    IRFI4905
    Infineon Technologies
    -
    -
    Through Hole
    TO-220-3 Full Pack
    -
    SILICON
    -
    Tube
    HEXFET®
    1997
    Obsolete
    1 (Unlimited)
    3
    -
    EAR99
    -
    -
    -
    -
    MOSFET (Metal Oxide)
    -
    1
    63W Tc
    -
    ENHANCEMENT MODE
    -
    ISOLATED
    -
    P-Channel
    SWITCHING
    20m Ω @ 22A, 10V
    4V @ 250μA
    3400pF @ 25V
    41A Tc
    180nC @ 10V
    -
    10V
    ±20V
    -
    -
    -
    -
    TO-220AB
    -
    41A
    -
    -
    930 mJ
    -
    -
    -
    -
    -
    -
    -
    -
    Non-RoHS Compliant
    -
    NO
    e3
    Matte Tin (Sn) - with Nickel (Ni) barrier
    SINGLE
    NOT SPECIFIED
    NOT SPECIFIED
    R-PSFM-T3
    Not Qualified
    SINGLE WITH BUILT-IN DIODE
    55V
    0.02Ohm
    260A
    55V
    -
    -
    -
    -
    -
    -
    -
    -
    IRFI3205PBF vs IRFI4905
  • IRFI614G
    IRFI614G
    Vishay Siliconix
    -
    Through Hole
    Through Hole
    TO-220-3 Full Pack, Isolated Tab
    3
    -
    -55°C~150°C TJ
    Tube
    -
    2016
    Obsolete
    1 (Unlimited)
    -
    -
    -
    -
    -
    -
    250V
    MOSFET (Metal Oxide)
    2.1A
    -
    23W Tc
    Single
    -
    -
    -
    7 ns
    N-Channel
    -
    2Ohm @ 1.3A, 10V
    4V @ 250μA
    140pF @ 25V
    2.1A Tc
    8.2nC @ 10V
    7.6ns
    10V
    ±20V
    7 ns
    16 ns
    2.1A
    -
    -
    20V
    -
    -
    -
    -
    -
    -
    -
    9.8mm
    10.63mm
    4.83mm
    -
    No
    Non-RoHS Compliant
    Contains Lead
    -
    -
    -
    -
    -
    -
    -
    -
    -
    250V
    -
    -
    -
    TO-220-3
    6.000006g
    150°C
    -55°C
    1
    140pF
    2Ohm
    2 Ω
    IRFI3205PBF vs IRFI614G
  • IRFI630G
    IRFI630G
    Vishay Siliconix
    -
    Through Hole
    Through Hole
    TO-220-3 Full Pack, Isolated Tab
    3
    -
    -55°C~150°C TJ
    Tube
    -
    2016
    Obsolete
    1 (Unlimited)
    -
    -
    -
    -
    -
    -
    250V
    MOSFET (Metal Oxide)
    5.9A
    -
    35W Tc
    Single
    -
    32W
    -
    9.4 ns
    N-Channel
    -
    400mOhm @ 3.5A, 10V
    4V @ 250μA
    800pF @ 25V
    5.9A Tc
    43nC @ 10V
    28ns
    10V
    ±20V
    20 ns
    39 ns
    5.9A
    -
    -
    20V
    -
    200V
    -
    -
    -
    -
    -
    9.8mm
    10.63mm
    4.83mm
    -
    No
    Non-RoHS Compliant
    Contains Lead
    -
    -
    -
    -
    -
    -
    -
    -
    -
    200V
    -
    -
    -
    TO-220-3
    6.000006g
    150°C
    -55°C
    1
    800pF
    400mOhm
    400 mΩ
    IRFI3205PBF vs IRFI630G
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS
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