IRFI1010NPBF

Infineon Technologies IRFI1010NPBF

Part Number:
IRFI1010NPBF
Manufacturer:
Infineon Technologies
Ventron No:
3070468-IRFI1010NPBF
Description:
MOSFET N-CH 55V 49A TO220FP
ECAD Model:
Datasheet:
IRFI1010NPbF

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Specifications
Infineon Technologies IRFI1010NPBF technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies IRFI1010NPBF.
  • Factory Lead Time
    14 Weeks
  • Mount
    Through Hole
  • Mounting Type
    Through Hole
  • Package / Case
    TO-220-3 Full Pack
  • Number of Pins
    3
  • Transistor Element Material
    SILICON
  • Operating Temperature
    -55°C~150°C TJ
  • Packaging
    Tube
  • Series
    HEXFET®
  • Published
    1997
  • Part Status
    Obsolete
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    3
  • ECCN Code
    EAR99
  • Resistance
    12mOhm
  • Additional Feature
    AVALANCHE RATED, HIGH RELIABILITY
  • Subcategory
    FET General Purpose Power
  • Voltage - Rated DC
    55V
  • Technology
    MOSFET (Metal Oxide)
  • Peak Reflow Temperature (Cel)
    NOT SPECIFIED
  • Current Rating
    49A
  • Time@Peak Reflow Temperature-Max (s)
    NOT SPECIFIED
  • Qualification Status
    Not Qualified
  • Number of Elements
    1
  • Power Dissipation-Max
    58W Tc
  • Element Configuration
    Single
  • Operating Mode
    ENHANCEMENT MODE
  • Power Dissipation
    47W
  • Case Connection
    ISOLATED
  • Turn On Delay Time
    11 ns
  • FET Type
    N-Channel
  • Transistor Application
    SWITCHING
  • Rds On (Max) @ Id, Vgs
    12m Ω @ 26A, 10V
  • Vgs(th) (Max) @ Id
    4V @ 250μA
  • Input Capacitance (Ciss) (Max) @ Vds
    2900pF @ 25V
  • Current - Continuous Drain (Id) @ 25°C
    49A Tc
  • Gate Charge (Qg) (Max) @ Vgs
    130nC @ 10V
  • Rise Time
    66ns
  • Drive Voltage (Max Rds On,Min Rds On)
    10V
  • Vgs (Max)
    ±20V
  • Fall Time (Typ)
    46 ns
  • Turn-Off Delay Time
    40 ns
  • Continuous Drain Current (ID)
    49A
  • Threshold Voltage
    4V
  • JEDEC-95 Code
    TO-220AB
  • Gate to Source Voltage (Vgs)
    20V
  • Drain Current-Max (Abs) (ID)
    44A
  • Drain to Source Breakdown Voltage
    55V
  • Pulsed Drain Current-Max (IDM)
    290A
  • Height
    9.8mm
  • Length
    10.6172mm
  • Width
    4.826mm
  • REACH SVHC
    No SVHC
  • RoHS Status
    ROHS3 Compliant
  • Lead Free
    Lead Free
Description
IRFI1010NPBF Overview
A device's maximal input capacitance is 2900pF @ 25V, which is defined as the capacitance between its input terminals with either input grounded.This device's continuous drain current (ID) is 49A, which represents the maximum continuous current it can conduct.In this device, the drain-source breakdown voltage is 55V and the drain-source breakdown voltage is the VDS at which a specified value of ID flows.In this device, the drain current is 44A, which is the maximum continuous current the device can conduct.Its turn-off delay time is 40 ns, which is the time to charge the device's input capacitance before drain current conduction begins.In terms of pulsed drain current, it has a maximum of 290A, which is its maximum rated peak drain current.Input capacitance charging takes time before drain current conduction begins, so the turn-on delay time is 11 ns.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 20V volts.An electrical device's threshold voltage is the point at which any of its operations will become active, and this transistor has a 4V threshold voltage.This device reduces its overall power consumption by using drive voltage (10V).

IRFI1010NPBF Features
a continuous drain current (ID) of 49A
a drain-to-source breakdown voltage of 55V voltage
the turn-off delay time is 40 ns
based on its rated peak drain current 290A.
a threshold voltage of 4V


IRFI1010NPBF Applications
There are a lot of Infineon Technologies
IRFI1010NPBF applications of single MOSFETs transistors.


Consumer Appliances
Lighting
Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
IRFI1010NPBF More Descriptions
MOSFET, Power;N-Ch;VDSS 55V;RDS(ON) 0.012Ohm;ID 49A;TO-220 Full-Pak;PD 58W;-55de
Single N-Channel 55 V 0.012 Ohm 130 nC HEXFET® Power Mosfet - TO-220-3FP
55V Single N-Channel HEXFET Power MOSFET in a TO-220 FullPak (Iso) package, FULLPAK220-3, RoHSInfineon SCT
Trans MOSFET N-CH 55V 49A 3-Pin(3 Tab) TO-220 Full-Pak
Power Field-Effect Transistor, 49A I(D), 55V, 0.012ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, FULLPAK-3
Benefits: RoHS Compliant; Low RDS(on); Industry-leading quality; Dynamic dv/dt Rating; Fast Switching; Fully Avalanche Rated; 175C Operating Temperature
Transistor Polarity:n Channel; Drain Source Voltage Vds:55V; Continuous Drain Current Id:49A; On Resistance Rds(On):0.012Ohm; Transistor Mounting:through Hole; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V; No. Of Pins:3Pinsrohs Compliant: Yes
MOSFET, N, FULLPAK; Transistor Type:MOSFET; Transistor Polarity:N; Voltage, Vds Typ:55V; Current, Id Cont:44A; Resistance, Rds On:0.012ohm; Voltage, Vgs Rds on Measurement:10V; Voltage, Vgs th Typ:4V; Case Style:TO-220FP; Termination Type:Through Hole; Current, Idm Pulse:290A; No. of Pins:3; Power Dissipation:47W; Power, Pd:47W; Temperature, Current:25°C; Temperature, Full Power Rating:25°C; Temperature, Tj Max:150°C; Temperature, Tj Min:-55°C; Transistors, No. of:1; Voltage, Isolation:2.5kV; Voltage, Vds Max:55V
Product Comparison
The three parts on the right have similar specifications to IRFI1010NPBF.
  • Image
    Part Number
    Manufacturer
    Factory Lead Time
    Mount
    Mounting Type
    Package / Case
    Number of Pins
    Transistor Element Material
    Operating Temperature
    Packaging
    Series
    Published
    Part Status
    Moisture Sensitivity Level (MSL)
    Number of Terminations
    ECCN Code
    Resistance
    Additional Feature
    Subcategory
    Voltage - Rated DC
    Technology
    Peak Reflow Temperature (Cel)
    Current Rating
    Time@Peak Reflow Temperature-Max (s)
    Qualification Status
    Number of Elements
    Power Dissipation-Max
    Element Configuration
    Operating Mode
    Power Dissipation
    Case Connection
    Turn On Delay Time
    FET Type
    Transistor Application
    Rds On (Max) @ Id, Vgs
    Vgs(th) (Max) @ Id
    Input Capacitance (Ciss) (Max) @ Vds
    Current - Continuous Drain (Id) @ 25°C
    Gate Charge (Qg) (Max) @ Vgs
    Rise Time
    Drive Voltage (Max Rds On,Min Rds On)
    Vgs (Max)
    Fall Time (Typ)
    Turn-Off Delay Time
    Continuous Drain Current (ID)
    Threshold Voltage
    JEDEC-95 Code
    Gate to Source Voltage (Vgs)
    Drain Current-Max (Abs) (ID)
    Drain to Source Breakdown Voltage
    Pulsed Drain Current-Max (IDM)
    Height
    Length
    Width
    REACH SVHC
    RoHS Status
    Lead Free
    Supplier Device Package
    Weight
    Max Operating Temperature
    Min Operating Temperature
    Number of Channels
    Drain to Source Voltage (Vdss)
    Input Capacitance
    Drain to Source Resistance
    Rds On Max
    Radiation Hardening
    View Compare
  • IRFI1010NPBF
    IRFI1010NPBF
    14 Weeks
    Through Hole
    Through Hole
    TO-220-3 Full Pack
    3
    SILICON
    -55°C~150°C TJ
    Tube
    HEXFET®
    1997
    Obsolete
    1 (Unlimited)
    3
    EAR99
    12mOhm
    AVALANCHE RATED, HIGH RELIABILITY
    FET General Purpose Power
    55V
    MOSFET (Metal Oxide)
    NOT SPECIFIED
    49A
    NOT SPECIFIED
    Not Qualified
    1
    58W Tc
    Single
    ENHANCEMENT MODE
    47W
    ISOLATED
    11 ns
    N-Channel
    SWITCHING
    12m Ω @ 26A, 10V
    4V @ 250μA
    2900pF @ 25V
    49A Tc
    130nC @ 10V
    66ns
    10V
    ±20V
    46 ns
    40 ns
    49A
    4V
    TO-220AB
    20V
    44A
    55V
    290A
    9.8mm
    10.6172mm
    4.826mm
    No SVHC
    ROHS3 Compliant
    Lead Free
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • IRFI9Z14G
    -
    Through Hole
    Through Hole
    TO-220-3 Full Pack, Isolated Tab
    3
    -
    -55°C~175°C TJ
    Tube
    -
    2009
    Obsolete
    1 (Unlimited)
    -
    -
    -
    -
    -
    -
    MOSFET (Metal Oxide)
    -
    -
    -
    -
    -
    27W Tc
    Single
    -
    -
    -
    11 ns
    P-Channel
    -
    500mOhm @ 3.2A, 10V
    4V @ 250μA
    270pF @ 25V
    5.3A Tc
    12nC @ 10V
    63ns
    10V
    ±20V
    31 ns
    9.6 ns
    5.3A
    -
    -
    20V
    -
    -
    -
    9.8mm
    10.63mm
    4.83mm
    -
    Non-RoHS Compliant
    -
    TO-220-3
    6.000006g
    175°C
    -55°C
    1
    60V
    270pF
    500mOhm
    500 mΩ
    No
  • IRFI9530G
    -
    Through Hole
    Through Hole
    TO-220-3 Full Pack, Isolated Tab
    3
    -
    -55°C~175°C TJ
    Tube
    -
    2016
    Obsolete
    1 (Unlimited)
    -
    -
    -
    -
    -
    -
    MOSFET (Metal Oxide)
    -
    -
    -
    -
    1
    42W Tc
    Single
    -
    42W
    -
    12 ns
    P-Channel
    -
    300mOhm @ 4.6A, 10V
    4V @ 250μA
    860pF @ 25V
    7.7A Tc
    38nC @ 10V
    52ns
    10V
    ±20V
    39 ns
    31 ns
    7.7A
    -
    -
    20V
    -
    -100V
    -
    9.8mm
    10.63mm
    4.83mm
    -
    Non-RoHS Compliant
    -
    TO-220-3
    6.000006g
    175°C
    -55°C
    1
    100V
    860pF
    300mOhm
    300 mΩ
    No
  • IRFI614G
    -
    Through Hole
    Through Hole
    TO-220-3 Full Pack, Isolated Tab
    3
    -
    -55°C~150°C TJ
    Tube
    -
    2016
    Obsolete
    1 (Unlimited)
    -
    -
    -
    -
    -
    250V
    MOSFET (Metal Oxide)
    -
    2.1A
    -
    -
    -
    23W Tc
    Single
    -
    -
    -
    7 ns
    N-Channel
    -
    2Ohm @ 1.3A, 10V
    4V @ 250μA
    140pF @ 25V
    2.1A Tc
    8.2nC @ 10V
    7.6ns
    10V
    ±20V
    7 ns
    16 ns
    2.1A
    -
    -
    20V
    -
    -
    -
    9.8mm
    10.63mm
    4.83mm
    -
    Non-RoHS Compliant
    Contains Lead
    TO-220-3
    6.000006g
    150°C
    -55°C
    1
    250V
    140pF
    2Ohm
    2 Ω
    No
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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