Infineon Technologies IRFI1010NPBF
- Part Number:
- IRFI1010NPBF
- Manufacturer:
- Infineon Technologies
- Ventron No:
- 3070468-IRFI1010NPBF
- Description:
- MOSFET N-CH 55V 49A TO220FP
- Datasheet:
- IRFI1010NPbF
Infineon Technologies IRFI1010NPBF technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies IRFI1010NPBF.
- Factory Lead Time14 Weeks
- MountThrough Hole
- Mounting TypeThrough Hole
- Package / CaseTO-220-3 Full Pack
- Number of Pins3
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~150°C TJ
- PackagingTube
- SeriesHEXFET®
- Published1997
- Part StatusObsolete
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- ECCN CodeEAR99
- Resistance12mOhm
- Additional FeatureAVALANCHE RATED, HIGH RELIABILITY
- SubcategoryFET General Purpose Power
- Voltage - Rated DC55V
- TechnologyMOSFET (Metal Oxide)
- Peak Reflow Temperature (Cel)NOT SPECIFIED
- Current Rating49A
- Time@Peak Reflow Temperature-Max (s)NOT SPECIFIED
- Qualification StatusNot Qualified
- Number of Elements1
- Power Dissipation-Max58W Tc
- Element ConfigurationSingle
- Operating ModeENHANCEMENT MODE
- Power Dissipation47W
- Case ConnectionISOLATED
- Turn On Delay Time11 ns
- FET TypeN-Channel
- Transistor ApplicationSWITCHING
- Rds On (Max) @ Id, Vgs12m Ω @ 26A, 10V
- Vgs(th) (Max) @ Id4V @ 250μA
- Input Capacitance (Ciss) (Max) @ Vds2900pF @ 25V
- Current - Continuous Drain (Id) @ 25°C49A Tc
- Gate Charge (Qg) (Max) @ Vgs130nC @ 10V
- Rise Time66ns
- Drive Voltage (Max Rds On,Min Rds On)10V
- Vgs (Max)±20V
- Fall Time (Typ)46 ns
- Turn-Off Delay Time40 ns
- Continuous Drain Current (ID)49A
- Threshold Voltage4V
- JEDEC-95 CodeTO-220AB
- Gate to Source Voltage (Vgs)20V
- Drain Current-Max (Abs) (ID)44A
- Drain to Source Breakdown Voltage55V
- Pulsed Drain Current-Max (IDM)290A
- Height9.8mm
- Length10.6172mm
- Width4.826mm
- REACH SVHCNo SVHC
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
IRFI1010NPBF Overview
A device's maximal input capacitance is 2900pF @ 25V, which is defined as the capacitance between its input terminals with either input grounded.This device's continuous drain current (ID) is 49A, which represents the maximum continuous current it can conduct.In this device, the drain-source breakdown voltage is 55V and the drain-source breakdown voltage is the VDS at which a specified value of ID flows.In this device, the drain current is 44A, which is the maximum continuous current the device can conduct.Its turn-off delay time is 40 ns, which is the time to charge the device's input capacitance before drain current conduction begins.In terms of pulsed drain current, it has a maximum of 290A, which is its maximum rated peak drain current.Input capacitance charging takes time before drain current conduction begins, so the turn-on delay time is 11 ns.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 20V volts.An electrical device's threshold voltage is the point at which any of its operations will become active, and this transistor has a 4V threshold voltage.This device reduces its overall power consumption by using drive voltage (10V).
IRFI1010NPBF Features
a continuous drain current (ID) of 49A
a drain-to-source breakdown voltage of 55V voltage
the turn-off delay time is 40 ns
based on its rated peak drain current 290A.
a threshold voltage of 4V
IRFI1010NPBF Applications
There are a lot of Infineon Technologies
IRFI1010NPBF applications of single MOSFETs transistors.
Consumer Appliances
Lighting
Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
A device's maximal input capacitance is 2900pF @ 25V, which is defined as the capacitance between its input terminals with either input grounded.This device's continuous drain current (ID) is 49A, which represents the maximum continuous current it can conduct.In this device, the drain-source breakdown voltage is 55V and the drain-source breakdown voltage is the VDS at which a specified value of ID flows.In this device, the drain current is 44A, which is the maximum continuous current the device can conduct.Its turn-off delay time is 40 ns, which is the time to charge the device's input capacitance before drain current conduction begins.In terms of pulsed drain current, it has a maximum of 290A, which is its maximum rated peak drain current.Input capacitance charging takes time before drain current conduction begins, so the turn-on delay time is 11 ns.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 20V volts.An electrical device's threshold voltage is the point at which any of its operations will become active, and this transistor has a 4V threshold voltage.This device reduces its overall power consumption by using drive voltage (10V).
IRFI1010NPBF Features
a continuous drain current (ID) of 49A
a drain-to-source breakdown voltage of 55V voltage
the turn-off delay time is 40 ns
based on its rated peak drain current 290A.
a threshold voltage of 4V
IRFI1010NPBF Applications
There are a lot of Infineon Technologies
IRFI1010NPBF applications of single MOSFETs transistors.
Consumer Appliances
Lighting
Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
IRFI1010NPBF More Descriptions
MOSFET, Power;N-Ch;VDSS 55V;RDS(ON) 0.012Ohm;ID 49A;TO-220 Full-Pak;PD 58W;-55de
Single N-Channel 55 V 0.012 Ohm 130 nC HEXFET® Power Mosfet - TO-220-3FP
55V Single N-Channel HEXFET Power MOSFET in a TO-220 FullPak (Iso) package, FULLPAK220-3, RoHSInfineon SCT
Trans MOSFET N-CH 55V 49A 3-Pin(3 Tab) TO-220 Full-Pak
Power Field-Effect Transistor, 49A I(D), 55V, 0.012ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, FULLPAK-3
Benefits: RoHS Compliant; Low RDS(on); Industry-leading quality; Dynamic dv/dt Rating; Fast Switching; Fully Avalanche Rated; 175C Operating Temperature
Transistor Polarity:n Channel; Drain Source Voltage Vds:55V; Continuous Drain Current Id:49A; On Resistance Rds(On):0.012Ohm; Transistor Mounting:through Hole; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V; No. Of Pins:3Pinsrohs Compliant: Yes
MOSFET, N, FULLPAK; Transistor Type:MOSFET; Transistor Polarity:N; Voltage, Vds Typ:55V; Current, Id Cont:44A; Resistance, Rds On:0.012ohm; Voltage, Vgs Rds on Measurement:10V; Voltage, Vgs th Typ:4V; Case Style:TO-220FP; Termination Type:Through Hole; Current, Idm Pulse:290A; No. of Pins:3; Power Dissipation:47W; Power, Pd:47W; Temperature, Current:25°C; Temperature, Full Power Rating:25°C; Temperature, Tj Max:150°C; Temperature, Tj Min:-55°C; Transistors, No. of:1; Voltage, Isolation:2.5kV; Voltage, Vds Max:55V
Single N-Channel 55 V 0.012 Ohm 130 nC HEXFET® Power Mosfet - TO-220-3FP
55V Single N-Channel HEXFET Power MOSFET in a TO-220 FullPak (Iso) package, FULLPAK220-3, RoHSInfineon SCT
Trans MOSFET N-CH 55V 49A 3-Pin(3 Tab) TO-220 Full-Pak
Power Field-Effect Transistor, 49A I(D), 55V, 0.012ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, FULLPAK-3
Benefits: RoHS Compliant; Low RDS(on); Industry-leading quality; Dynamic dv/dt Rating; Fast Switching; Fully Avalanche Rated; 175C Operating Temperature
Transistor Polarity:n Channel; Drain Source Voltage Vds:55V; Continuous Drain Current Id:49A; On Resistance Rds(On):0.012Ohm; Transistor Mounting:through Hole; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V; No. Of Pins:3Pinsrohs Compliant: Yes
MOSFET, N, FULLPAK; Transistor Type:MOSFET; Transistor Polarity:N; Voltage, Vds Typ:55V; Current, Id Cont:44A; Resistance, Rds On:0.012ohm; Voltage, Vgs Rds on Measurement:10V; Voltage, Vgs th Typ:4V; Case Style:TO-220FP; Termination Type:Through Hole; Current, Idm Pulse:290A; No. of Pins:3; Power Dissipation:47W; Power, Pd:47W; Temperature, Current:25°C; Temperature, Full Power Rating:25°C; Temperature, Tj Max:150°C; Temperature, Tj Min:-55°C; Transistors, No. of:1; Voltage, Isolation:2.5kV; Voltage, Vds Max:55V
The three parts on the right have similar specifications to IRFI1010NPBF.
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ImagePart NumberManufacturerFactory Lead TimeMountMounting TypePackage / CaseNumber of PinsTransistor Element MaterialOperating TemperaturePackagingSeriesPublishedPart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeResistanceAdditional FeatureSubcategoryVoltage - Rated DCTechnologyPeak Reflow Temperature (Cel)Current RatingTime@Peak Reflow Temperature-Max (s)Qualification StatusNumber of ElementsPower Dissipation-MaxElement ConfigurationOperating ModePower DissipationCase ConnectionTurn On Delay TimeFET TypeTransistor ApplicationRds On (Max) @ Id, VgsVgs(th) (Max) @ IdInput Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25°CGate Charge (Qg) (Max) @ VgsRise TimeDrive Voltage (Max Rds On,Min Rds On)Vgs (Max)Fall Time (Typ)Turn-Off Delay TimeContinuous Drain Current (ID)Threshold VoltageJEDEC-95 CodeGate to Source Voltage (Vgs)Drain Current-Max (Abs) (ID)Drain to Source Breakdown VoltagePulsed Drain Current-Max (IDM)HeightLengthWidthREACH SVHCRoHS StatusLead FreeSupplier Device PackageWeightMax Operating TemperatureMin Operating TemperatureNumber of ChannelsDrain to Source Voltage (Vdss)Input CapacitanceDrain to Source ResistanceRds On MaxRadiation HardeningView Compare
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IRFI1010NPBF14 WeeksThrough HoleThrough HoleTO-220-3 Full Pack3SILICON-55°C~150°C TJTubeHEXFET®1997Obsolete1 (Unlimited)3EAR9912mOhmAVALANCHE RATED, HIGH RELIABILITYFET General Purpose Power55VMOSFET (Metal Oxide)NOT SPECIFIED49ANOT SPECIFIEDNot Qualified158W TcSingleENHANCEMENT MODE47WISOLATED11 nsN-ChannelSWITCHING12m Ω @ 26A, 10V4V @ 250μA2900pF @ 25V49A Tc130nC @ 10V66ns10V±20V46 ns40 ns49A4VTO-220AB20V44A55V290A9.8mm10.6172mm4.826mmNo SVHCROHS3 CompliantLead Free-----------
-
-Through HoleThrough HoleTO-220-3 Full Pack, Isolated Tab3--55°C~175°C TJTube-2009Obsolete1 (Unlimited)------MOSFET (Metal Oxide)-----27W TcSingle---11 nsP-Channel-500mOhm @ 3.2A, 10V4V @ 250μA270pF @ 25V5.3A Tc12nC @ 10V63ns10V±20V31 ns9.6 ns5.3A--20V---9.8mm10.63mm4.83mm-Non-RoHS Compliant-TO-220-36.000006g175°C-55°C160V270pF500mOhm500 mΩNo
-
-Through HoleThrough HoleTO-220-3 Full Pack, Isolated Tab3--55°C~175°C TJTube-2016Obsolete1 (Unlimited)------MOSFET (Metal Oxide)----142W TcSingle-42W-12 nsP-Channel-300mOhm @ 4.6A, 10V4V @ 250μA860pF @ 25V7.7A Tc38nC @ 10V52ns10V±20V39 ns31 ns7.7A--20V--100V-9.8mm10.63mm4.83mm-Non-RoHS Compliant-TO-220-36.000006g175°C-55°C1100V860pF300mOhm300 mΩNo
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-Through HoleThrough HoleTO-220-3 Full Pack, Isolated Tab3--55°C~150°C TJTube-2016Obsolete1 (Unlimited)-----250VMOSFET (Metal Oxide)-2.1A---23W TcSingle---7 nsN-Channel-2Ohm @ 1.3A, 10V4V @ 250μA140pF @ 25V2.1A Tc8.2nC @ 10V7.6ns10V±20V7 ns16 ns2.1A--20V---9.8mm10.63mm4.83mm-Non-RoHS CompliantContains LeadTO-220-36.000006g150°C-55°C1250V140pF2Ohm2 ΩNo
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