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IRFHM8326TRPBF

Infineon Technologies IRFHM8326TRPBF

Part Number:
IRFHM8326TRPBF
Manufacturer:
Infineon Technologies
Ventron No:
2482516-IRFHM8326TRPBF
Description:
MOSFET N-CH 30V 25A PQFN
ECAD Model:
Datasheet:
IRFHM8326TRPBF

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Specifications
Infineon Technologies IRFHM8326TRPBF technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies IRFHM8326TRPBF.
  • Factory Lead Time
    12 Weeks
  • Mount
    Surface Mount
  • Mounting Type
    Surface Mount
  • Package / Case
    8-PowerTDFN
  • Number of Pins
    8
  • Transistor Element Material
    SILICON
  • Operating Temperature
    -55°C~150°C TJ
  • Packaging
    Cut Tape (CT)
  • Series
    HEXFET®
  • Published
    2013
  • Part Status
    Active
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    5
  • ECCN Code
    EAR99
  • Subcategory
    FET General Purpose Power
  • Technology
    MOSFET (Metal Oxide)
  • Terminal Position
    DUAL
  • Terminal Form
    FLAT
  • JESD-30 Code
    S-PDSO-F5
  • Number of Elements
    1
  • Configuration
    SINGLE WITH BUILT-IN DIODE
  • Power Dissipation-Max
    2.8W Ta 37W Tc
  • Operating Mode
    ENHANCEMENT MODE
  • Power Dissipation
    2.8W
  • Case Connection
    DRAIN
  • Turn On Delay Time
    12 ns
  • FET Type
    N-Channel
  • Transistor Application
    SWITCHING
  • Rds On (Max) @ Id, Vgs
    4.7m Ω @ 20A, 10V
  • Vgs(th) (Max) @ Id
    2.2V @ 50μA
  • Input Capacitance (Ciss) (Max) @ Vds
    2496pF @ 10V
  • Current - Continuous Drain (Id) @ 25°C
    19A Ta
  • Gate Charge (Qg) (Max) @ Vgs
    39nC @ 10V
  • Rise Time
    35ns
  • Drive Voltage (Max Rds On,Min Rds On)
    4.5V 10V
  • Vgs (Max)
    ±20V
  • Fall Time (Typ)
    12 ns
  • Turn-Off Delay Time
    18 ns
  • Continuous Drain Current (ID)
    19A
  • Threshold Voltage
    1.7V
  • Gate to Source Voltage (Vgs)
    20V
  • Drain Current-Max (Abs) (ID)
    70A
  • Drain-source On Resistance-Max
    0.0067Ohm
  • Drain to Source Breakdown Voltage
    30V
  • REACH SVHC
    No SVHC
  • Radiation Hardening
    No
  • RoHS Status
    ROHS3 Compliant
  • Lead Free
    Lead Free
Description
Description
The IRFHM8326TRPBF is a HEXFET? Power MOSFET. A special kind of metal-oxide-semiconductor field-effect transistor (MOSFET) made to handle high power levels is known as a power MOSFET. High switching speed and good efficiency at low voltages are its key benefits over other power semiconductor devices like insulated-gate bipolar transistors (IGBT) or thyristors. It has an easy-to-drive gate that it shares with the IGBT. They occasionally have low gain to the point that a larger gate voltage is required than the control voltage.

Features
Continuous drain current (ID)
Safe operating area (SOA)
Gate charge (QG)
Threshold Voltage (VGS(th))
Blocking voltage (BVDSS)
Maximum single pulse avalanche energy (EAS)
On-resistance (RDS(ON))
Maximum junction temperature (TJ(max))

Applications
Charge and Discharge Switch for Notebook PC Battery Application
System/Load Switch
Synchronous MOSFET for Buck Converters 
Automotive applications
Small motor control
IRFHM8326TRPBF More Descriptions
30V Single N-Channel HEXFET Power MOSFET in a 3.3mm X 3.3mm PQFN package, PQFN 3.3X3.3 8L, RoHSInfineon SCT
Single N-Channel 30 V 4.7 mOhm 39 nC HEXFET® Power Mosfet - PQFN 3.3 x 3.3 mm
Trans MOSFET N-CH 30V 19A 8-Pin PQFN T/R - Tape and Reel
Benefits: RoHS Compliant; Low Thermal Resistance to PCB (less than 3.4C/W); Low Profile (less than 1.05 mm); Industry-Standard Pinout; Compatible with Existing Surface Mount Techniques; Qualified Industrial; Qualified MSL1 | Target Applications: Battery Protection; Isolated Primary Side MOSFETs; Isolated Secondary Side SyncRec MOSFETs; Load Switch High Side; Load Switch Low Side; Point of Load ControlFET
Product Comparison
The three parts on the right have similar specifications to IRFHM8326TRPBF.
  • Image
    Part Number
    Manufacturer
    Factory Lead Time
    Mount
    Mounting Type
    Package / Case
    Number of Pins
    Transistor Element Material
    Operating Temperature
    Packaging
    Series
    Published
    Part Status
    Moisture Sensitivity Level (MSL)
    Number of Terminations
    ECCN Code
    Subcategory
    Technology
    Terminal Position
    Terminal Form
    JESD-30 Code
    Number of Elements
    Configuration
    Power Dissipation-Max
    Operating Mode
    Power Dissipation
    Case Connection
    Turn On Delay Time
    FET Type
    Transistor Application
    Rds On (Max) @ Id, Vgs
    Vgs(th) (Max) @ Id
    Input Capacitance (Ciss) (Max) @ Vds
    Current - Continuous Drain (Id) @ 25°C
    Gate Charge (Qg) (Max) @ Vgs
    Rise Time
    Drive Voltage (Max Rds On,Min Rds On)
    Vgs (Max)
    Fall Time (Typ)
    Turn-Off Delay Time
    Continuous Drain Current (ID)
    Threshold Voltage
    Gate to Source Voltage (Vgs)
    Drain Current-Max (Abs) (ID)
    Drain-source On Resistance-Max
    Drain to Source Breakdown Voltage
    REACH SVHC
    Radiation Hardening
    RoHS Status
    Lead Free
    Supplier Device Package
    Max Operating Temperature
    Min Operating Temperature
    Max Power Dissipation
    Drain to Source Voltage (Vdss)
    Input Capacitance
    Recovery Time
    Drain to Source Resistance
    Rds On Max
    Nominal Vgs
    Height
    Length
    Width
    Element Configuration
    Resistance
    View Compare
  • IRFHM8326TRPBF
    IRFHM8326TRPBF
    Infineon Technologies
    12 Weeks
    Surface Mount
    Surface Mount
    8-PowerTDFN
    8
    SILICON
    -55°C~150°C TJ
    Cut Tape (CT)
    HEXFET®
    2013
    Active
    1 (Unlimited)
    5
    EAR99
    FET General Purpose Power
    MOSFET (Metal Oxide)
    DUAL
    FLAT
    S-PDSO-F5
    1
    SINGLE WITH BUILT-IN DIODE
    2.8W Ta 37W Tc
    ENHANCEMENT MODE
    2.8W
    DRAIN
    12 ns
    N-Channel
    SWITCHING
    4.7m Ω @ 20A, 10V
    2.2V @ 50μA
    2496pF @ 10V
    19A Ta
    39nC @ 10V
    35ns
    4.5V 10V
    ±20V
    12 ns
    18 ns
    19A
    1.7V
    20V
    70A
    0.0067Ohm
    30V
    No SVHC
    No
    ROHS3 Compliant
    Lead Free
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • IRFH5250DTR2PBF
    IRFH5250DTR2PBF
    Infineon Technologies
    -
    Surface Mount
    Surface Mount
    8-PowerVDFN
    8
    -
    -
    Cut Tape (CT)
    HEXFET®
    2013
    Obsolete
    1 (Unlimited)
    -
    -
    -
    MOSFET (Metal Oxide)
    -
    -
    -
    1
    -
    -
    -
    250W
    -
    23 ns
    N-Channel
    -
    1.4mOhm @ 50A, 10V
    2.35V @ 150μA
    6115pF @ 13V
    40A Ta 100A Tc
    83nC @ 10V
    72ns
    -
    -
    24 ns
    23 ns
    100A
    1.8V
    20V
    -
    -
    25V
    No SVHC
    No
    RoHS Compliant
    -
    8-PQFN (5x6)
    150°C
    -55°C
    3.6W
    25V
    706pF
    41 ns
    2.2mOhm
    1.4 mΩ
    1.8 V
    838.2μm
    5.9944mm
    5mm
    -
    -
    IRFHM8326TRPBF vs IRFH5250DTR2PBF
  • IRFH5206TR2PBF
    IRFH5206TR2PBF
    Infineon Technologies
    -
    Surface Mount
    Surface Mount
    8-PowerVDFN
    8
    -
    -
    Cut Tape (CT)
    HEXFET®
    2010
    Obsolete
    1 (Unlimited)
    -
    -
    -
    MOSFET (Metal Oxide)
    -
    -
    -
    1
    -
    -
    -
    100W
    -
    6.4 ns
    N-Channel
    -
    6.7mOhm @ 50A, 10V
    4V @ 100μA
    2490pF @ 25V
    16A Ta 89A Tc
    60nC @ 10V
    11ns
    -
    -
    8.2 ns
    22 ns
    89A
    4V
    20V
    -
    -
    60V
    No SVHC
    No
    RoHS Compliant
    -
    8-PQFN (5x6)
    150°C
    -55°C
    3.6W
    60V
    2.49nF
    39 ns
    6.7mOhm
    6.7 mΩ
    4 V
    838.2μm
    5.9944mm
    5mm
    Single
    -
    IRFHM8326TRPBF vs IRFH5206TR2PBF
  • IRFH5204TR2PBF
    IRFH5204TR2PBF
    Infineon Technologies
    -
    Surface Mount
    Surface Mount
    8-VQFN Exposed Pad
    8
    -
    -
    Cut Tape (CT)
    HEXFET®
    2011
    Obsolete
    1 (Unlimited)
    -
    -
    -
    MOSFET (Metal Oxide)
    -
    -
    -
    1
    -
    -
    -
    3.6W
    -
    8.4 ns
    N-Channel
    -
    4.3mOhm @ 50A, 10V
    4V @ 100μA
    2460pF @ 25V
    22A Ta 100A Tc
    65nC @ 10V
    14ns
    -
    -
    8.3 ns
    18 ns
    22A
    4V
    20V
    -
    -
    40V
    No SVHC
    No
    RoHS Compliant
    Lead Free
    PQFN (5x6)
    150°C
    -55°C
    3.6W
    40V
    2.46nF
    45 ns
    4.3mOhm
    4.3 mΩ
    4 V
    900μm
    6mm
    5mm
    Single
    4.3MOhm
    IRFHM8326TRPBF vs IRFH5204TR2PBF
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS
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