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IRFH7085TRPBF

Infineon Technologies IRFH7085TRPBF

Part Number:
IRFH7085TRPBF
Manufacturer:
Infineon Technologies
Ventron No:
3070476-IRFH7085TRPBF
Description:
MOSFET N-CH 60V 23A 6-PQFN
ECAD Model:
Datasheet:
IRFH7085TRPBF

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Specifications
Infineon Technologies IRFH7085TRPBF technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies IRFH7085TRPBF.
  • Factory Lead Time
    12 Weeks
  • Mount
    Surface Mount
  • Mounting Type
    Surface Mount
  • Package / Case
    8-PowerVDFN
  • Number of Pins
    8
  • Transistor Element Material
    SILICON
  • Operating Temperature
    -55°C~150°C TJ
  • Packaging
    Tape & Reel (TR)
  • Series
    StrongIRFET™
  • Published
    2008
  • Part Status
    Active
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    5
  • ECCN Code
    EAR99
  • Technology
    MOSFET (Metal Oxide)
  • Terminal Position
    DUAL
  • Terminal Form
    NO LEAD
  • Peak Reflow Temperature (Cel)
    NOT SPECIFIED
  • Time@Peak Reflow Temperature-Max (s)
    NOT SPECIFIED
  • JESD-30 Code
    R-PDSO-N5
  • Number of Elements
    1
  • Number of Channels
    1
  • Power Dissipation-Max
    156W Tc
  • Element Configuration
    Single
  • Operating Mode
    ENHANCEMENT MODE
  • Power Dissipation
    156W
  • Case Connection
    DRAIN
  • Turn On Delay Time
    13 ns
  • FET Type
    N-Channel
  • Transistor Application
    SWITCHING
  • Rds On (Max) @ Id, Vgs
    3.2m Ω @ 75A, 10V
  • Vgs(th) (Max) @ Id
    3.7V @ 150μA
  • Input Capacitance (Ciss) (Max) @ Vds
    6460pF @ 25V
  • Current - Continuous Drain (Id) @ 25°C
    100A Tc
  • Gate Charge (Qg) (Max) @ Vgs
    165nC @ 10V
  • Rise Time
    25ns
  • Drive Voltage (Max Rds On,Min Rds On)
    6V 10V
  • Vgs (Max)
    ±20V
  • Fall Time (Typ)
    23 ns
  • Turn-Off Delay Time
    63 ns
  • Continuous Drain Current (ID)
    23A
  • Threshold Voltage
    3.7V
  • Gate to Source Voltage (Vgs)
    20V
  • Drain-source On Resistance-Max
    0.0032Ohm
  • Drain to Source Breakdown Voltage
    60V
  • Pulsed Drain Current-Max (IDM)
    590A
  • Avalanche Energy Rating (Eas)
    554 mJ
  • Max Junction Temperature (Tj)
    150°C
  • Height
    950μm
  • Length
    6.15mm
  • Width
    5.15mm
  • REACH SVHC
    No SVHC
  • RoHS Status
    ROHS3 Compliant
  • Lead Free
    Lead Free
Description
IRFH7085TRPBF Features Improved Gate, Avalanche, and Dynamic dV/dt Ruggedness Fully Characterized Capacitance and Avalanche SO Enhanced body diode dV/dt and dI/dt Capability Lead-Free, RoHS Compliant
IRFH7085TRPBF Applications Half-bridge and full-bridge topologies Synchronous rectifier applications Resonant mode power supplies DC/DC converters DC/AC Inverters 
IRFH7085TRPBF More Descriptions
Trans MOSFET N-CH 60V 23A 8-Pin PQFN T/R - Product that comes on tape, but is not reeled
60V Single N-Channel HEXFET Power MOSFET in a PQFN 5mm x 6mm package, PG-TDSON-8, RoHSInfineon SCT
Single N-Channel 60 V 3.2 mOhm 110 nC HEXFET® Power Mosfet - PQFN 5 x 6 mm
MOSFET N-CH 60V 23A 6-PQFN / Trans MOSFET N-CH Si 60V 23A 8-Pin PQFN EP T/R
Transistor Polarity:n Channel; Drain Source Voltage Vds:60V; Continuous Drain Current Id:100A; On Resistance Rds(On):0.0026Ohm; Transistor Mounting:surface Mount; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:3.7V Rohs Compliant: Yes
Benefits: RoHS Compliant; Improved Gate, Avalanche and Dynamic dV/dt Ruggedness; Fully Characterized Capacitance and Avalanche SOA; Enhanced body diode dV/dt and dI/dt Capability
MOSFET, N-CH, 60V, 100A, PQFN-8; Transistor Polarity: N Channel; Continuous Drain Current Id: 100A; Drain Source Voltage Vds: 60V; On Resistance Rds(on): 0.0026ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3.7V; Power Dissipation Pd: -; Transistor Case Style: QFN; No. of Pins: 8Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018)
Product Comparison
The three parts on the right have similar specifications to IRFH7085TRPBF.
  • Image
    Part Number
    Manufacturer
    Factory Lead Time
    Mount
    Mounting Type
    Package / Case
    Number of Pins
    Transistor Element Material
    Operating Temperature
    Packaging
    Series
    Published
    Part Status
    Moisture Sensitivity Level (MSL)
    Number of Terminations
    ECCN Code
    Technology
    Terminal Position
    Terminal Form
    Peak Reflow Temperature (Cel)
    Time@Peak Reflow Temperature-Max (s)
    JESD-30 Code
    Number of Elements
    Number of Channels
    Power Dissipation-Max
    Element Configuration
    Operating Mode
    Power Dissipation
    Case Connection
    Turn On Delay Time
    FET Type
    Transistor Application
    Rds On (Max) @ Id, Vgs
    Vgs(th) (Max) @ Id
    Input Capacitance (Ciss) (Max) @ Vds
    Current - Continuous Drain (Id) @ 25°C
    Gate Charge (Qg) (Max) @ Vgs
    Rise Time
    Drive Voltage (Max Rds On,Min Rds On)
    Vgs (Max)
    Fall Time (Typ)
    Turn-Off Delay Time
    Continuous Drain Current (ID)
    Threshold Voltage
    Gate to Source Voltage (Vgs)
    Drain-source On Resistance-Max
    Drain to Source Breakdown Voltage
    Pulsed Drain Current-Max (IDM)
    Avalanche Energy Rating (Eas)
    Max Junction Temperature (Tj)
    Height
    Length
    Width
    REACH SVHC
    RoHS Status
    Lead Free
    Supplier Device Package
    Max Operating Temperature
    Min Operating Temperature
    Max Power Dissipation
    Drain to Source Voltage (Vdss)
    Input Capacitance
    Recovery Time
    Drain to Source Resistance
    Rds On Max
    Nominal Vgs
    Radiation Hardening
    Resistance
    View Compare
  • IRFH7085TRPBF
    IRFH7085TRPBF
    Infineon Technologies
    12 Weeks
    Surface Mount
    Surface Mount
    8-PowerVDFN
    8
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    StrongIRFET™
    2008
    Active
    1 (Unlimited)
    5
    EAR99
    MOSFET (Metal Oxide)
    DUAL
    NO LEAD
    NOT SPECIFIED
    NOT SPECIFIED
    R-PDSO-N5
    1
    1
    156W Tc
    Single
    ENHANCEMENT MODE
    156W
    DRAIN
    13 ns
    N-Channel
    SWITCHING
    3.2m Ω @ 75A, 10V
    3.7V @ 150μA
    6460pF @ 25V
    100A Tc
    165nC @ 10V
    25ns
    6V 10V
    ±20V
    23 ns
    63 ns
    23A
    3.7V
    20V
    0.0032Ohm
    60V
    590A
    554 mJ
    150°C
    950μm
    6.15mm
    5.15mm
    No SVHC
    ROHS3 Compliant
    Lead Free
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • IRFH5206TR2PBF
    IRFH5206TR2PBF
    Infineon Technologies
    -
    Surface Mount
    Surface Mount
    8-PowerVDFN
    8
    -
    -
    Cut Tape (CT)
    HEXFET®
    2010
    Obsolete
    1 (Unlimited)
    -
    -
    MOSFET (Metal Oxide)
    -
    -
    -
    -
    -
    1
    -
    -
    Single
    -
    100W
    -
    6.4 ns
    N-Channel
    -
    6.7mOhm @ 50A, 10V
    4V @ 100μA
    2490pF @ 25V
    16A Ta 89A Tc
    60nC @ 10V
    11ns
    -
    -
    8.2 ns
    22 ns
    89A
    4V
    20V
    -
    60V
    -
    -
    -
    838.2μm
    5.9944mm
    5mm
    No SVHC
    RoHS Compliant
    -
    8-PQFN (5x6)
    150°C
    -55°C
    3.6W
    60V
    2.49nF
    39 ns
    6.7mOhm
    6.7 mΩ
    4 V
    No
    -
    IRFH7085TRPBF vs IRFH5206TR2PBF
  • IRFH5007TR2PBF
    IRFH5007TR2PBF
    Infineon Technologies
    -
    -
    Surface Mount
    8-PowerTDFN
    -
    -
    -
    Tape & Reel (TR)
    HEXFET®
    -
    Obsolete
    1 (Unlimited)
    -
    -
    MOSFET (Metal Oxide)
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    N-Channel
    -
    5.9mOhm @ 50A, 10V
    4V @ 150μA
    4.29pF @ 25V
    17A Ta 100A Tc
    98nC @ 10V
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    ROHS3 Compliant
    -
    8-PQFN (5x6)
    -
    -
    -
    75V
    -
    -
    -
    -
    -
    -
    -
    IRFH7085TRPBF vs IRFH5007TR2PBF
  • IRFH5204TR2PBF
    IRFH5204TR2PBF
    Infineon Technologies
    -
    Surface Mount
    Surface Mount
    8-VQFN Exposed Pad
    8
    -
    -
    Cut Tape (CT)
    HEXFET®
    2011
    Obsolete
    1 (Unlimited)
    -
    -
    MOSFET (Metal Oxide)
    -
    -
    -
    -
    -
    1
    -
    -
    Single
    -
    3.6W
    -
    8.4 ns
    N-Channel
    -
    4.3mOhm @ 50A, 10V
    4V @ 100μA
    2460pF @ 25V
    22A Ta 100A Tc
    65nC @ 10V
    14ns
    -
    -
    8.3 ns
    18 ns
    22A
    4V
    20V
    -
    40V
    -
    -
    -
    900μm
    6mm
    5mm
    No SVHC
    RoHS Compliant
    Lead Free
    PQFN (5x6)
    150°C
    -55°C
    3.6W
    40V
    2.46nF
    45 ns
    4.3mOhm
    4.3 mΩ
    4 V
    No
    4.3MOhm
    IRFH7085TRPBF vs IRFH5204TR2PBF
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS
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