Infineon Technologies IRFH5406TRPBF
- Part Number:
- IRFH5406TRPBF
- Manufacturer:
- Infineon Technologies
- Ventron No:
- 2849541-IRFH5406TRPBF
- Description:
- MOSFET N-CH 60V 40A 8-PQFN
- ECAD Model:
-
- Datasheet:
- IRFH5406TRPBF
Infineon Technologies IRFH5406TRPBF technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies IRFH5406TRPBF.
- Factory Lead Time12 Weeks
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / Case8-PowerVDFN
- Number of Pins8
- Transistor Element MaterialSILICON
- Manufacturer Package IdentifierIRFH5406TRPBF
- Operating Temperature-55°C~150°C TJ
- PackagingTape & Reel (TR)
- SeriesHEXFET®
- Published2011
- JESD-609 Codee3
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations5
- ECCN CodeEAR99
- Resistance14.4MOhm
- Terminal FinishMatte Tin (Sn)
- SubcategoryFET General Purpose Power
- TechnologyMOSFET (Metal Oxide)
- Terminal PositionDUAL
- Peak Reflow Temperature (Cel)260
- Time@Peak Reflow Temperature-Max (s)30
- JESD-30 CodeR-PDSO-N5
- Number of Elements1
- ConfigurationSINGLE WITH BUILT-IN DIODE
- Number of Channels1
- Power Dissipation-Max3.6W Ta 46W Tc
- Operating ModeENHANCEMENT MODE
- Power Dissipation3.6W
- Case ConnectionDRAIN
- Turn On Delay Time12 ns
- FET TypeN-Channel
- Transistor ApplicationSWITCHING
- Rds On (Max) @ Id, Vgs14.4m Ω @ 24A, 10V
- Vgs(th) (Max) @ Id4V @ 50μA
- Input Capacitance (Ciss) (Max) @ Vds1256pF @ 25V
- Current - Continuous Drain (Id) @ 25°C11A Ta 40A Tc
- Gate Charge (Qg) (Max) @ Vgs35nC @ 10V
- Rise Time8.7ns
- Drive Voltage (Max Rds On,Min Rds On)10V
- Vgs (Max)±20V
- Fall Time (Typ)3.5 ns
- Turn-Off Delay Time5.4 ns
- Continuous Drain Current (ID)40A
- Threshold Voltage4V
- Gate to Source Voltage (Vgs)20V
- Drain to Source Breakdown Voltage60V
- Avalanche Energy Rating (Eas)45 mJ
- Max Junction Temperature (Tj)150°C
- Nominal Vgs2 V
- Height900μm
- Length5.9944mm
- Width5mm
- REACH SVHCNo SVHC
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
IRFH5406TRPBF Description
STripFETTM F7 technology is used in these N-channel Power MOSFETs, which has an enhanced trench gate structure that minimizes internal capacitance and gate charge for faster and more efficient switching. Conduction loss will be reduced, switching performance will be improved, the dv/dt rate will be increased, and the avalanche energy will be increased with this technology.
IRFH5406TRPBF Features
RDSon is low (v 14.4 mQ) Low PCB Thermal Resistance (2.7°C/W) Rg was evaluated in its entirety. Low-profile (less than 0.9 mm) Pinout conforms to industry standards and is compatible with current surface mount techniques. Compliant with RoHS There is no lead, bromide, or halogen in this product. MSL1 is an abbreviated version of MSL1. Oualification in Industry
IRFH5406TRPBF Applications
? Synchronous Rectification on the Secondary Side
? Inverters for DC Motors (Inverters for DC Motors)
? Applications for DC-DC Bricks
? Converting Boost
STripFETTM F7 technology is used in these N-channel Power MOSFETs, which has an enhanced trench gate structure that minimizes internal capacitance and gate charge for faster and more efficient switching. Conduction loss will be reduced, switching performance will be improved, the dv/dt rate will be increased, and the avalanche energy will be increased with this technology.
IRFH5406TRPBF Features
RDSon is low (v 14.4 mQ) Low PCB Thermal Resistance (2.7°C/W) Rg was evaluated in its entirety. Low-profile (less than 0.9 mm) Pinout conforms to industry standards and is compatible with current surface mount techniques. Compliant with RoHS There is no lead, bromide, or halogen in this product. MSL1 is an abbreviated version of MSL1. Oualification in Industry
IRFH5406TRPBF Applications
? Synchronous Rectification on the Secondary Side
? Inverters for DC Motors (Inverters for DC Motors)
? Applications for DC-DC Bricks
? Converting Boost
IRFH5406TRPBF More Descriptions
Single N-Channel 60 V 14.4 mOhm 32 nC HEXFET® Power Mosfet - PQFN 5 x 6 mm
Trans MOSFET N-CH 60V 11A 8-Pin QFN T/R - Product that comes on tape, but is not reeled
60V Single N-Channel HEXFET Power MOSFET in a PQFN package, PG-TDSON-8, RoHSInfineon SCT
Trans MOSFET N-CH 60V 11A 8-Pin PQFN EP T/R / MOSFET N-CH 60V 40A 8-PQFN
MOSFET, 60V, 40A, 14.4 mOhm, 23 nC Qg, PQFN 5x6
MOSFET Operating temperature: -55...150 °C Housing type: PQFN-8 (3x3) Polarity: N Variants: Enhancement mode Power dissipation: 46 W
MOSFET Transistor; Transistor Polarity:N; MOSFET Transistor; Transistor Polarity:N Channel; Continuous Drain Current Id:40A; Drain Source Voltage Vds:60V; On Resistance Rds(on):11.4mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:2V; Power Dissipation Pd:3.6W
Benefits: Low RDSon (less than 14.4 mOhms) Lowers Conduction Losses; Low Thermal Resistance to PCB (less than 2.7C/W) Enables better thermal dissipation; 100% Rg tested for Increased Reliability; Low Profile (less than 0.9 mm) results in Increased Power Density; Industry-Standard Pinout for Multi-Vendor Compatibility; Compatible with Existing Surface Mount Techniques for Easier Manufacturing; Environmentally Friendlier RoHS Compliant Containing no Lead, no Bromide and no Halogen; MSL1, Industrial Qualification results in Increased Reliability | Target Applications: Battery Operated Drive; Isolated Primary Side MOSFETs; Isolated Secondary Side SyncRec MOSFETs
Trans MOSFET N-CH 60V 11A 8-Pin QFN T/R - Product that comes on tape, but is not reeled
60V Single N-Channel HEXFET Power MOSFET in a PQFN package, PG-TDSON-8, RoHSInfineon SCT
Trans MOSFET N-CH 60V 11A 8-Pin PQFN EP T/R / MOSFET N-CH 60V 40A 8-PQFN
MOSFET, 60V, 40A, 14.4 mOhm, 23 nC Qg, PQFN 5x6
MOSFET Operating temperature: -55...150 °C Housing type: PQFN-8 (3x3) Polarity: N Variants: Enhancement mode Power dissipation: 46 W
MOSFET Transistor; Transistor Polarity:N; MOSFET Transistor; Transistor Polarity:N Channel; Continuous Drain Current Id:40A; Drain Source Voltage Vds:60V; On Resistance Rds(on):11.4mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:2V; Power Dissipation Pd:3.6W
Benefits: Low RDSon (less than 14.4 mOhms) Lowers Conduction Losses; Low Thermal Resistance to PCB (less than 2.7C/W) Enables better thermal dissipation; 100% Rg tested for Increased Reliability; Low Profile (less than 0.9 mm) results in Increased Power Density; Industry-Standard Pinout for Multi-Vendor Compatibility; Compatible with Existing Surface Mount Techniques for Easier Manufacturing; Environmentally Friendlier RoHS Compliant Containing no Lead, no Bromide and no Halogen; MSL1, Industrial Qualification results in Increased Reliability | Target Applications: Battery Operated Drive; Isolated Primary Side MOSFETs; Isolated Secondary Side SyncRec MOSFETs
The three parts on the right have similar specifications to IRFH5406TRPBF.
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ImagePart NumberManufacturerFactory Lead TimeMountMounting TypePackage / CaseNumber of PinsTransistor Element MaterialManufacturer Package IdentifierOperating TemperaturePackagingSeriesPublishedJESD-609 CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeResistanceTerminal FinishSubcategoryTechnologyTerminal PositionPeak Reflow Temperature (Cel)Time@Peak Reflow Temperature-Max (s)JESD-30 CodeNumber of ElementsConfigurationNumber of ChannelsPower Dissipation-MaxOperating ModePower DissipationCase ConnectionTurn On Delay TimeFET TypeTransistor ApplicationRds On (Max) @ Id, VgsVgs(th) (Max) @ IdInput Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25°CGate Charge (Qg) (Max) @ VgsRise TimeDrive Voltage (Max Rds On,Min Rds On)Vgs (Max)Fall Time (Typ)Turn-Off Delay TimeContinuous Drain Current (ID)Threshold VoltageGate to Source Voltage (Vgs)Drain to Source Breakdown VoltageAvalanche Energy Rating (Eas)Max Junction Temperature (Tj)Nominal VgsHeightLengthWidthREACH SVHCRadiation HardeningRoHS StatusLead FreeSupplier Device PackageMax Operating TemperatureMin Operating TemperatureMax Power DissipationElement ConfigurationDrain to Source Voltage (Vdss)Input CapacitanceRecovery TimeDrain to Source ResistanceRds On MaxView Compare
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IRFH5406TRPBF12 WeeksSurface MountSurface Mount8-PowerVDFN8SILICONIRFH5406TRPBF-55°C~150°C TJTape & Reel (TR)HEXFET®2011e3Active1 (Unlimited)5EAR9914.4MOhmMatte Tin (Sn)FET General Purpose PowerMOSFET (Metal Oxide)DUAL26030R-PDSO-N51SINGLE WITH BUILT-IN DIODE13.6W Ta 46W TcENHANCEMENT MODE3.6WDRAIN12 nsN-ChannelSWITCHING14.4m Ω @ 24A, 10V4V @ 50μA1256pF @ 25V11A Ta 40A Tc35nC @ 10V8.7ns10V±20V3.5 ns5.4 ns40A4V20V60V45 mJ150°C2 V900μm5.9944mm5mmNo SVHCNoROHS3 CompliantLead Free----------- -
-Surface MountSurface Mount8-PowerVDFN8---Cut Tape (CT)HEXFET®2010-Obsolete1 (Unlimited)-----MOSFET (Metal Oxide)----1----100W-6.4 nsN-Channel-6.7mOhm @ 50A, 10V4V @ 100μA2490pF @ 25V16A Ta 89A Tc60nC @ 10V11ns--8.2 ns22 ns89A4V20V60V--4 V838.2μm5.9944mm5mmNo SVHCNoRoHS Compliant-8-PQFN (5x6)150°C-55°C3.6WSingle60V2.49nF39 ns6.7mOhm6.7 mΩ
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-Surface MountSurface Mount8-PowerVDFN8---Cut Tape (CT)HEXFET®2010-Obsolete1 (Unlimited)-----MOSFET (Metal Oxide)----1----3.6W-13 nsN-Channel-2.6mOhm @ 50A, 10V4V @ 150μA4490pF @ 20V28A Ta 100A Tc110nC @ 10V13ns--28 ns28 ns100A4V20V40V--4 V838.2μm5.9944mm5mmNo SVHCNoRoHS Compliant-8-PQFN (5x6)150°C-55°C3.6WSingle40V4.29nF48 ns2.6mOhm2.6 mΩ
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-Surface MountSurface Mount8-PowerTDFN8---Digi-Reel®HEXFET®2013-Obsolete1 (Unlimited)--8.5MOhm--MOSFET (Metal Oxide)----1----3.6W-9.1 nsN-Channel-8.5mOhm @ 45A, 10V4V @ 100μA3110pF @ 25V14A Ta 75A Tc72nC @ 10V12ns--6.5 ns20 ns14A2V20V75V------No SVHCNoRoHS CompliantLead Free8-PQFN (5x6)150°C-55°C3.6WSingle75V3.11nF42 ns8.5mOhm8.5 mΩ
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