Infineon Technologies IRFH5301TRPBF
- Part Number:
- IRFH5301TRPBF
- Manufacturer:
- Infineon Technologies
- Ventron No:
- 2480907-IRFH5301TRPBF
- Description:
- MOSFET N-CH 30V 35A 5X6 PQFN
- ECAD Model:
-
- Datasheet:
- IRFH5301TRPBF
Infineon Technologies IRFH5301TRPBF technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies IRFH5301TRPBF.
- Factory Lead Time12 Weeks
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / Case8-PowerVDFN
- Number of Pins8
- Supplier Device PackagePQFN (5x6) Single Die
- Operating Temperature-55°C~150°C TJ
- PackagingTape & Reel (TR)
- SeriesHEXFET®
- Published2009
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Resistance1.85MOhm
- Max Operating Temperature150°C
- Min Operating Temperature-55°C
- TechnologyMOSFET (Metal Oxide)
- Number of Elements1
- Power Dissipation-Max3.6W Ta 110W Tc
- Power Dissipation110W
- Turn On Delay Time21 ns
- FET TypeN-Channel
- Rds On (Max) @ Id, Vgs1.85mOhm @ 50A, 10V
- Vgs(th) (Max) @ Id2.35V @ 100μA
- Input Capacitance (Ciss) (Max) @ Vds5114pF @ 15V
- Current - Continuous Drain (Id) @ 25°C35A Ta 100A Tc
- Gate Charge (Qg) (Max) @ Vgs77nC @ 10V
- Rise Time78ns
- Drain to Source Voltage (Vdss)30V
- Drive Voltage (Max Rds On,Min Rds On)4.5V 10V
- Vgs (Max)±20V
- Fall Time (Typ)23 ns
- Turn-Off Delay Time22 ns
- Continuous Drain Current (ID)100A
- Threshold Voltage1.8V
- Gate to Source Voltage (Vgs)20V
- Drain to Source Breakdown Voltage30V
- Input Capacitance5.114nF
- Drain to Source Resistance1.55mOhm
- Rds On Max1.85 mΩ
- Nominal Vgs1.8 V
- Height850μm
- Length6mm
- Width5mm
- REACH SVHCNo SVHC
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
IRFH5301TRPBF Features
Low RDSon (<1.85m|?)
Low Thermal Resistance to PCB (<1.1??C/W)
100% Rg tested
Low Profile (<0.9 mm)
Industry-Standard Pinout
RoHS Compliant Containing no Lead, no Bromide, and no Halogen
MSL1, Industrial Qualification
IRFH5301TRPBF Applications OR-ing MOSFET for 12V (typical) Bus in-Rush Current Synchronous MOSFET for Buck Converters Battery Operated DC Motor Inverter MOSFET
IRFH5301TRPBF Applications OR-ing MOSFET for 12V (typical) Bus in-Rush Current Synchronous MOSFET for Buck Converters Battery Operated DC Motor Inverter MOSFET
IRFH5301TRPBF More Descriptions
INFINEON IRFH5301TRPBF MOSFET Transistor, N Channel, 100 A, 30 V, 0.00155 ohm, 10 V, 1.8 VNew
Single N-Channel 30 V 1.85 mOhm 77 nC HEXFET® Power Mosfet - PQFN 5 x 6 mm
30V Single N-Channel HEXFET Power MOSFET in a PQFN 5X6mm package, PG-TDSON-8, RoHSInfineon SCT
MOSFET, N-Channel, 30V, 100A, 1.85 mOhmmax, 37 nC Qg, PQFN 5x6
Trans MOSFET N-CH 30V 35A 8-Pin QFN EP T/R - Tape and Reel
MOSFET, N-CH, 30V, 100A, PQFN-8; Transistor Polarity: N Channel; Continuous Drain Current Id: 100A; Drain Source Voltage Vds: 30V; On Resistance Rds(on): 0.00155ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 1.8V; Power Dissipation Pd: 110W; Transistor Case Style: PQFN; No. of Pins: 8Pins; Operating Temperature Max: 150°C; Product Range: HEXFET Series; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018)
Benefits: RoHS Compliant; Industry-leading quality; Low RDSon (less than 1.15 mO); Low Thermal Resistance to PCB (less than 0.8C/W); 100% Rg tested; Low Profile (less than 0.9 mm); Industry-Standard Pinout; Compatible with Existing Surface Mount Techniques; Qualified Industrial; Qualified MSL1 | Target Applications: Isolated Primary Side MOSFETs; Isolated Secondary Side SyncRec MOSFETs; Point of Load SyncFET
Single N-Channel 30 V 1.85 mOhm 77 nC HEXFET® Power Mosfet - PQFN 5 x 6 mm
30V Single N-Channel HEXFET Power MOSFET in a PQFN 5X6mm package, PG-TDSON-8, RoHSInfineon SCT
MOSFET, N-Channel, 30V, 100A, 1.85 mOhmmax, 37 nC Qg, PQFN 5x6
Trans MOSFET N-CH 30V 35A 8-Pin QFN EP T/R - Tape and Reel
MOSFET, N-CH, 30V, 100A, PQFN-8; Transistor Polarity: N Channel; Continuous Drain Current Id: 100A; Drain Source Voltage Vds: 30V; On Resistance Rds(on): 0.00155ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 1.8V; Power Dissipation Pd: 110W; Transistor Case Style: PQFN; No. of Pins: 8Pins; Operating Temperature Max: 150°C; Product Range: HEXFET Series; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018)
Benefits: RoHS Compliant; Industry-leading quality; Low RDSon (less than 1.15 mO); Low Thermal Resistance to PCB (less than 0.8C/W); 100% Rg tested; Low Profile (less than 0.9 mm); Industry-Standard Pinout; Compatible with Existing Surface Mount Techniques; Qualified Industrial; Qualified MSL1 | Target Applications: Isolated Primary Side MOSFETs; Isolated Secondary Side SyncRec MOSFETs; Point of Load SyncFET
The three parts on the right have similar specifications to IRFH5301TRPBF.
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ImagePart NumberManufacturerFactory Lead TimeMountMounting TypePackage / CaseNumber of PinsSupplier Device PackageOperating TemperaturePackagingSeriesPublishedPart StatusMoisture Sensitivity Level (MSL)ResistanceMax Operating TemperatureMin Operating TemperatureTechnologyNumber of ElementsPower Dissipation-MaxPower DissipationTurn On Delay TimeFET TypeRds On (Max) @ Id, VgsVgs(th) (Max) @ IdInput Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25°CGate Charge (Qg) (Max) @ VgsRise TimeDrain to Source Voltage (Vdss)Drive Voltage (Max Rds On,Min Rds On)Vgs (Max)Fall Time (Typ)Turn-Off Delay TimeContinuous Drain Current (ID)Threshold VoltageGate to Source Voltage (Vgs)Drain to Source Breakdown VoltageInput CapacitanceDrain to Source ResistanceRds On MaxNominal VgsHeightLengthWidthREACH SVHCRadiation HardeningRoHS StatusLead FreeTransistor Element MaterialNumber of TerminationsECCN CodeAdditional FeatureSubcategoryTerminal PositionJESD-30 CodeConfigurationOperating ModeCase ConnectionTransistor ApplicationPulsed Drain Current-Max (IDM)Avalanche Energy Rating (Eas)Contact PlatingMax Power DissipationElement ConfigurationRecovery TimeView Compare
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IRFH5301TRPBF12 WeeksSurface MountSurface Mount8-PowerVDFN8PQFN (5x6) Single Die-55°C~150°C TJTape & Reel (TR)HEXFET®2009Active1 (Unlimited)1.85MOhm150°C-55°CMOSFET (Metal Oxide)13.6W Ta 110W Tc110W21 nsN-Channel1.85mOhm @ 50A, 10V2.35V @ 100μA5114pF @ 15V35A Ta 100A Tc77nC @ 10V78ns30V4.5V 10V±20V23 ns22 ns100A1.8V20V30V5.114nF1.55mOhm1.85 mΩ1.8 V850μm6mm5mmNo SVHCNoROHS3 CompliantLead Free------------------ -
-Surface MountSurface Mount8-PowerVDFN8--55°C~150°C TJTape & Reel (TR)HEXFET®2010Obsolete1 (Unlimited)---MOSFET (Metal Oxide)13.6W Ta 46W Tc3.6W11 nsN-Channel4.2m Ω @ 49A, 10V2.35V @ 50μA2190pF @ 15V23A Ta 82A Tc41nC @ 10V31ns-4.5V 10V±20V6.1 ns8.8 ns23A-20V30V----838.2μm5.9944mm5mm-NoRoHS CompliantLead FreeSILICON5EAR99HIGH RELIABILITYFET General Purpose PowerDUALR-PDSO-N5SINGLE WITH BUILT-IN DIODEENHANCEMENT MODEDRAINSWITCHING330A46 mJ----
-
-Surface MountSurface Mount8-PowerVDFN8--55°C~150°C TJTape & Reel (TR)HEXFET®2009Obsolete1 (Unlimited)8.1MOhm--MOSFET (Metal Oxide)13.6W Ta 26W Tc3.6W9 nsN-Channel8.1m Ω @ 15A, 10V2.35V @ 25μA1125pF @ 15V15A Ta 44A Tc12nC @ 4.5V26ns-4.5V 10V±20V6.1 ns9.1 ns44A-20V30V----838.2μm5.9944mm5mm-NoRoHS CompliantLead FreeSILICON5EAR99HIGH RELIABILITYFET General Purpose PowerDUALR-PDSO-N5SINGLE WITH BUILT-IN DIODEENHANCEMENT MODEDRAINSWITCHING60A46 mJTin---
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-Surface MountSurface Mount8-VQFN Exposed Pad8PQFN (5x6)-Cut Tape (CT)HEXFET®2011Obsolete1 (Unlimited)4.3MOhm150°C-55°CMOSFET (Metal Oxide)1-3.6W8.4 nsN-Channel4.3mOhm @ 50A, 10V4V @ 100μA2460pF @ 25V22A Ta 100A Tc65nC @ 10V14ns40V--8.3 ns18 ns22A4V20V40V2.46nF4.3mOhm4.3 mΩ4 V900μm6mm5mmNo SVHCNoRoHS CompliantLead Free--------------3.6WSingle45 ns
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