Infineon Technologies IRFH5300TRPBF
- Part Number:
- IRFH5300TRPBF
- Manufacturer:
- Infineon Technologies
- Ventron No:
- 2482450-IRFH5300TRPBF
- Description:
- MOSFET N-CH 30V 40A PQFN
- ECAD Model:
-
- Datasheet:
- IRFH5300TRPBF
Infineon Technologies IRFH5300TRPBF technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies IRFH5300TRPBF.
- Factory Lead Time12 Weeks
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / Case8-PowerVDFN
- Number of Pins8
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~150°C TJ
- PackagingTape & Reel (TR)
- SeriesHEXFET®
- Published2004
- JESD-609 Codee3
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations5
- ECCN CodeEAR99
- Resistance1.4MOhm
- Terminal FinishMatte Tin (Sn)
- Additional FeatureHIGH RELIABILITY
- SubcategoryFET General Purpose Power
- TechnologyMOSFET (Metal Oxide)
- Terminal PositionDUAL
- JESD-30 CodeR-PDSO-N5
- Number of Elements1
- ConfigurationSINGLE WITH BUILT-IN DIODE
- Power Dissipation-Max3.6W Ta 250W Tc
- Operating ModeENHANCEMENT MODE
- Power Dissipation3.6W
- Case ConnectionDRAIN
- Turn On Delay Time26 ns
- FET TypeN-Channel
- Transistor ApplicationSWITCHING
- Rds On (Max) @ Id, Vgs1.4m Ω @ 50A, 10V
- Vgs(th) (Max) @ Id2.35V @ 150μA
- Input Capacitance (Ciss) (Max) @ Vds7200pF @ 15V
- Current - Continuous Drain (Id) @ 25°C40A Ta 100A Tc
- Gate Charge (Qg) (Max) @ Vgs120nC @ 10V
- Rise Time30ns
- Drive Voltage (Max Rds On,Min Rds On)4.5V 10V
- Vgs (Max)±20V
- Fall Time (Typ)13 ns
- Turn-Off Delay Time31 ns
- Continuous Drain Current (ID)100A
- Threshold Voltage1.8V
- Gate to Source Voltage (Vgs)20V
- Drain Current-Max (Abs) (ID)40A
- Drain to Source Breakdown Voltage30V
- Pulsed Drain Current-Max (IDM)400A
- Avalanche Energy Rating (Eas)420 mJ
- Height850μm
- Length6mm
- Width5mm
- REACH SVHCNo SVHC
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
IRFH5300TRPBF Description
These International Rectifier P-Channel MOSFETs had an extraordinarily low on-resistance per silicon area thanks to the intricate processing methods used to create them. This advantage provides designers with a strong tool to use in load and battery control applications. The SO-8 has been modified using an unique leadframe to improve its thermal performance and enable multiple die support, making it the perfect choice for a range of power applications. These upgrades enable the usage of many devices while significantly reducing the amount of board space required in an application. The container is made to be used with wave, infrared, or vapor phase soldering.
IRFH5300TRPBF Features
Low Rdsoa (1/4mQ or less)
Low Thermal Resistance to the PCB (0 to 5°C/W)
Complete Rg testing
Slim Profile (S 0.9 mm)
Business Standard Pinout
Compatibility with Current Surface Mount Methods=
No Lead, Bromide, or Halogens, RoHS Compliant with Industrial Qualification
IRFH5300TRPBF Applications
?MOSFET OR-ing for Typical 12V Bus In-Rush Current
? DC Motor Inverter MOSFET that runs on batteries
These International Rectifier P-Channel MOSFETs had an extraordinarily low on-resistance per silicon area thanks to the intricate processing methods used to create them. This advantage provides designers with a strong tool to use in load and battery control applications. The SO-8 has been modified using an unique leadframe to improve its thermal performance and enable multiple die support, making it the perfect choice for a range of power applications. These upgrades enable the usage of many devices while significantly reducing the amount of board space required in an application. The container is made to be used with wave, infrared, or vapor phase soldering.
IRFH5300TRPBF Features
Low Rdsoa (1/4mQ or less)
Low Thermal Resistance to the PCB (0 to 5°C/W)
Complete Rg testing
Slim Profile (S 0.9 mm)
Business Standard Pinout
Compatibility with Current Surface Mount Methods=
No Lead, Bromide, or Halogens, RoHS Compliant with Industrial Qualification
IRFH5300TRPBF Applications
?MOSFET OR-ing for Typical 12V Bus In-Rush Current
? DC Motor Inverter MOSFET that runs on batteries
IRFH5300TRPBF More Descriptions
30V Single N-Channel HEXFET Power MOSFET in a 5mm X 6mm PQFN package, PG-TDSON-8, RoHSInfineon SCT
Single N-Channel 30 V 2.1 mOhm 120 nC HEXFET® Power Mosfet - PQFN 5 x 6 mm
MOSFET N-CH 30V 40A PQFN / Trans MOSFET N-CH 30V 40A 8-Pin PQFN EP T/R
Transistor; Transistor Polarity:N Channel; Continuous Drain Current, Id:100A; Drain Source Voltage, Vds:30V; On Resistance, Rds(on):0.0014ohm; Rds(on) Test Voltage, Vgs:10V; Threshold Voltage, Vgs Typ:1.8V ;RoHS Compliant: Yes
MOSFET, N-CH, 30V, 100A, PQFN-8; Transistor Polarity: N Channel; Continuous Drain Current Id: 100A; Drain Source Voltage Vds: 30V; On Resistance Rds(on): 0.0011ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 1.8V; Power Dissipation Pd: 250W; Transistor Case Style: PQFN; No. of Pins: 8Pins; Operating Temperature Max: 150°C; Product Range: HEXFET Series; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018)
Benefits: RoHS Compliant; Industry-leading quality; Low RDSon (less than 1.15 mO); Low Thermal Resistance to PCB (less than 0.8C/W); 100% Rg tested; Low Profile (less than 0.9 mm); Industry-Standard Pinout; Compatible with Existing Surface Mount Techniques; Qualified Industrial; Qualified MSL1 | Target Applications: eFuse; HotSwap; Isolated Primary Side MOSFETs; Isolated Secondary Side SyncRec MOSFETs; ORing; Point of Load SyncFET
Single N-Channel 30 V 2.1 mOhm 120 nC HEXFET® Power Mosfet - PQFN 5 x 6 mm
MOSFET N-CH 30V 40A PQFN / Trans MOSFET N-CH 30V 40A 8-Pin PQFN EP T/R
Transistor; Transistor Polarity:N Channel; Continuous Drain Current, Id:100A; Drain Source Voltage, Vds:30V; On Resistance, Rds(on):0.0014ohm; Rds(on) Test Voltage, Vgs:10V; Threshold Voltage, Vgs Typ:1.8V ;RoHS Compliant: Yes
MOSFET, N-CH, 30V, 100A, PQFN-8; Transistor Polarity: N Channel; Continuous Drain Current Id: 100A; Drain Source Voltage Vds: 30V; On Resistance Rds(on): 0.0011ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 1.8V; Power Dissipation Pd: 250W; Transistor Case Style: PQFN; No. of Pins: 8Pins; Operating Temperature Max: 150°C; Product Range: HEXFET Series; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018)
Benefits: RoHS Compliant; Industry-leading quality; Low RDSon (less than 1.15 mO); Low Thermal Resistance to PCB (less than 0.8C/W); 100% Rg tested; Low Profile (less than 0.9 mm); Industry-Standard Pinout; Compatible with Existing Surface Mount Techniques; Qualified Industrial; Qualified MSL1 | Target Applications: eFuse; HotSwap; Isolated Primary Side MOSFETs; Isolated Secondary Side SyncRec MOSFETs; ORing; Point of Load SyncFET
The three parts on the right have similar specifications to IRFH5300TRPBF.
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ImagePart NumberManufacturerFactory Lead TimeMountMounting TypePackage / CaseNumber of PinsTransistor Element MaterialOperating TemperaturePackagingSeriesPublishedJESD-609 CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeResistanceTerminal FinishAdditional FeatureSubcategoryTechnologyTerminal PositionJESD-30 CodeNumber of ElementsConfigurationPower Dissipation-MaxOperating ModePower DissipationCase ConnectionTurn On Delay TimeFET TypeTransistor ApplicationRds On (Max) @ Id, VgsVgs(th) (Max) @ IdInput Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25°CGate Charge (Qg) (Max) @ VgsRise TimeDrive Voltage (Max Rds On,Min Rds On)Vgs (Max)Fall Time (Typ)Turn-Off Delay TimeContinuous Drain Current (ID)Threshold VoltageGate to Source Voltage (Vgs)Drain Current-Max (Abs) (ID)Drain to Source Breakdown VoltagePulsed Drain Current-Max (IDM)Avalanche Energy Rating (Eas)HeightLengthWidthREACH SVHCRadiation HardeningRoHS StatusLead FreeSupplier Device PackageMax Operating TemperatureMin Operating TemperatureMax Power DissipationElement ConfigurationDrain to Source Voltage (Vdss)Input CapacitanceRecovery TimeDrain to Source ResistanceRds On MaxNominal VgsView Compare
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IRFH5300TRPBF12 WeeksSurface MountSurface Mount8-PowerVDFN8SILICON-55°C~150°C TJTape & Reel (TR)HEXFET®2004e3Active1 (Unlimited)5EAR991.4MOhmMatte Tin (Sn)HIGH RELIABILITYFET General Purpose PowerMOSFET (Metal Oxide)DUALR-PDSO-N51SINGLE WITH BUILT-IN DIODE3.6W Ta 250W TcENHANCEMENT MODE3.6WDRAIN26 nsN-ChannelSWITCHING1.4m Ω @ 50A, 10V2.35V @ 150μA7200pF @ 15V40A Ta 100A Tc120nC @ 10V30ns4.5V 10V±20V13 ns31 ns100A1.8V20V40A30V400A420 mJ850μm6mm5mmNo SVHCNoROHS3 CompliantLead Free------------ -
-Surface MountSurface Mount8-PowerVDFN8--Cut Tape (CT)HEXFET®2010-Obsolete1 (Unlimited)------MOSFET (Metal Oxide)--1---100W-6.4 nsN-Channel-6.7mOhm @ 50A, 10V4V @ 100μA2490pF @ 25V16A Ta 89A Tc60nC @ 10V11ns--8.2 ns22 ns89A4V20V-60V--838.2μm5.9944mm5mmNo SVHCNoRoHS Compliant-8-PQFN (5x6)150°C-55°C3.6WSingle60V2.49nF39 ns6.7mOhm6.7 mΩ4 V
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-Surface MountSurface Mount8-PowerTDFN8--Digi-Reel®HEXFET®2013-Obsolete1 (Unlimited)--8.5MOhm---MOSFET (Metal Oxide)--1---3.6W-9.1 nsN-Channel-8.5mOhm @ 45A, 10V4V @ 100μA3110pF @ 25V14A Ta 75A Tc72nC @ 10V12ns--6.5 ns20 ns14A2V20V-75V-----No SVHCNoRoHS CompliantLead Free8-PQFN (5x6)150°C-55°C3.6WSingle75V3.11nF42 ns8.5mOhm8.5 mΩ-
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-Surface MountSurface Mount8-VQFN Exposed Pad8--Cut Tape (CT)HEXFET®2011-Obsolete1 (Unlimited)--4.3MOhm---MOSFET (Metal Oxide)--1---3.6W-8.4 nsN-Channel-4.3mOhm @ 50A, 10V4V @ 100μA2460pF @ 25V22A Ta 100A Tc65nC @ 10V14ns--8.3 ns18 ns22A4V20V-40V--900μm6mm5mmNo SVHCNoRoHS CompliantLead FreePQFN (5x6)150°C-55°C3.6WSingle40V2.46nF45 ns4.3mOhm4.3 mΩ4 V
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