Infineon Technologies IRFH5110TR2PBF

IRFH5110TR2PBF Overview
A device's maximal input capacitance is 3152pF @ 25V, which is defined as the capacitance between its input terminals with either input grounded.This device's continuous drain current (ID) is 63A, which represents the maximum continuous current it can conduct.In this device, the drain-source breakdown voltage is 100V and the drain-source breakdown voltage is the VDS at which a specified value of ID flows.Its turn-off delay time is 22 ns, which is the time to charge the device's input capacitance before drain current conduction begins.When a gate-to-source voltage (VGS) is applied to bias a MOSFET to the on state, the resistance between the drain and the source of the device is 12.4mOhm.Input capacitance charging takes time before drain current conduction begins, so the turn-on delay time is 7.8 ns.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 20V volts.An electrical device's threshold voltage is the point at which any of its operations will become active, and this transistor has a 4V threshold voltage.This transistor requires a 100V drain to source voltage (Vdss).

IRFH5110TR2PBF Features
a continuous drain current (ID) of 63A
a drain-to-source breakdown voltage of 100V voltage
the turn-off delay time is 22 ns
single MOSFETs transistor is 12.4mOhm
a threshold voltage of 4V
a 100V drain to source voltage (Vdss)


IRFH5110TR2PBF Applications
There are a lot of Infineon Technologies
IRFH5110TR2PBF applications of single MOSFETs transistors.


Consumer Appliances
Lighting
Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples