Infineon Technologies IRFH5020TR2PBF
- Part Number:
- IRFH5020TR2PBF
- Manufacturer:
- Infineon Technologies
- Ventron No:
- 2493747-IRFH5020TR2PBF
- Description:
- MOSFET N-CH 200V 5.1A 8VQFN
- Datasheet:
- IRFH5020TR2PBF
Infineon Technologies IRFH5020TR2PBF technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies IRFH5020TR2PBF.
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / Case8-PowerVDFN
- Number of Pins8
- Supplier Device Package8-PQFN (5x6)
- PackagingCut Tape (CT)
- SeriesHEXFET®
- Published2013
- Part StatusObsolete
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Resistance55MOhm
- Max Operating Temperature150°C
- Min Operating Temperature-55°C
- Max Power Dissipation3.6W
- TechnologyMOSFET (Metal Oxide)
- Number of Elements1
- Element ConfigurationSingle
- Power Dissipation8.3W
- Turn On Delay Time9.3 ns
- FET TypeN-Channel
- Rds On (Max) @ Id, Vgs55mOhm @ 7.5A, 10V
- Vgs(th) (Max) @ Id5V @ 150μA
- Input Capacitance (Ciss) (Max) @ Vds2290pF @ 100V
- Current - Continuous Drain (Id) @ 25°C5.1A Ta
- Gate Charge (Qg) (Max) @ Vgs54nC @ 10V
- Rise Time7.7ns
- Drain to Source Voltage (Vdss)200V
- Fall Time (Typ)6 ns
- Turn-Off Delay Time21 ns
- Continuous Drain Current (ID)43A
- Threshold Voltage5V
- Gate to Source Voltage (Vgs)20V
- Drain to Source Breakdown Voltage200V
- Input Capacitance2.29nF
- Recovery Time69 ns
- Drain to Source Resistance55mOhm
- Rds On Max55 mΩ
- Nominal Vgs5 V
- Height838.2μm
- Length5.9944mm
- Width5mm
- REACH SVHCNo SVHC
- Radiation HardeningNo
- RoHS StatusRoHS Compliant
- Lead FreeLead Free
IRFH5020TR2PBF Overview
A device's maximal input capacitance is 2290pF @ 100V, which is defined as the capacitance between its input terminals with either input grounded.This device's continuous drain current (ID) is 43A, which represents the maximum continuous current it can conduct.In this device, the drain-source breakdown voltage is 200V and the drain-source breakdown voltage is the VDS at which a specified value of ID flows.Its turn-off delay time is 21 ns, which is the time to charge the device's input capacitance before drain current conduction begins.When a gate-to-source voltage (VGS) is applied to bias a MOSFET to the on state, the resistance between the drain and the source of the device is 55mOhm.Input capacitance charging takes time before drain current conduction begins, so the turn-on delay time is 9.3 ns.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 20V volts.An electrical device's threshold voltage is the point at which any of its operations will become active, and this transistor has a 5V threshold voltage.This transistor requires a 200V drain to source voltage (Vdss).
IRFH5020TR2PBF Features
a continuous drain current (ID) of 43A
a drain-to-source breakdown voltage of 200V voltage
the turn-off delay time is 21 ns
single MOSFETs transistor is 55mOhm
a threshold voltage of 5V
a 200V drain to source voltage (Vdss)
IRFH5020TR2PBF Applications
There are a lot of Infineon Technologies
IRFH5020TR2PBF applications of single MOSFETs transistors.
Consumer Appliances
Lighting
Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
A device's maximal input capacitance is 2290pF @ 100V, which is defined as the capacitance between its input terminals with either input grounded.This device's continuous drain current (ID) is 43A, which represents the maximum continuous current it can conduct.In this device, the drain-source breakdown voltage is 200V and the drain-source breakdown voltage is the VDS at which a specified value of ID flows.Its turn-off delay time is 21 ns, which is the time to charge the device's input capacitance before drain current conduction begins.When a gate-to-source voltage (VGS) is applied to bias a MOSFET to the on state, the resistance between the drain and the source of the device is 55mOhm.Input capacitance charging takes time before drain current conduction begins, so the turn-on delay time is 9.3 ns.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 20V volts.An electrical device's threshold voltage is the point at which any of its operations will become active, and this transistor has a 5V threshold voltage.This transistor requires a 200V drain to source voltage (Vdss).
IRFH5020TR2PBF Features
a continuous drain current (ID) of 43A
a drain-to-source breakdown voltage of 200V voltage
the turn-off delay time is 21 ns
single MOSFETs transistor is 55mOhm
a threshold voltage of 5V
a 200V drain to source voltage (Vdss)
IRFH5020TR2PBF Applications
There are a lot of Infineon Technologies
IRFH5020TR2PBF applications of single MOSFETs transistors.
Consumer Appliances
Lighting
Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
IRFH5020TR2PBF More Descriptions
200V Single N-Channel HEXFET Power MOSFET in a 5mm X 6mm PQFN package
MOSFET, N-Channel, 200V, 41A, 59 mOhm, 36 nC Qg, PQFN
Trans MOSFET N-CH 200V 5.1A 8-Pin QFN EP T/R
MOSFET, N CH, 200V, 41A, PQFN56; Transistor Polarity:N Channel; Continuous Drain Current Id:5.1A; Drain Source Voltage Vds:200V; On Resistance Rds(on):47mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:5V; Power Dissipation Pd:8.3W; Operating Temperature Range:-55°C to 150°C; Transistor Case Style:PQFN; No. of Pins:8; SVHC:No SVHC (20-Jun-2011); Current Id Max:43A; Power Dissipation Pd:8.3W; Voltage Vgs Max:20V
MOSFET, N-Channel, 200V, 41A, 59 mOhm, 36 nC Qg, PQFN
Trans MOSFET N-CH 200V 5.1A 8-Pin QFN EP T/R
MOSFET, N CH, 200V, 41A, PQFN56; Transistor Polarity:N Channel; Continuous Drain Current Id:5.1A; Drain Source Voltage Vds:200V; On Resistance Rds(on):47mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:5V; Power Dissipation Pd:8.3W; Operating Temperature Range:-55°C to 150°C; Transistor Case Style:PQFN; No. of Pins:8; SVHC:No SVHC (20-Jun-2011); Current Id Max:43A; Power Dissipation Pd:8.3W; Voltage Vgs Max:20V
The three parts on the right have similar specifications to IRFH5020TR2PBF.
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ImagePart NumberManufacturerMountMounting TypePackage / CaseNumber of PinsSupplier Device PackagePackagingSeriesPublishedPart StatusMoisture Sensitivity Level (MSL)ResistanceMax Operating TemperatureMin Operating TemperatureMax Power DissipationTechnologyNumber of ElementsElement ConfigurationPower DissipationTurn On Delay TimeFET TypeRds On (Max) @ Id, VgsVgs(th) (Max) @ IdInput Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25°CGate Charge (Qg) (Max) @ VgsRise TimeDrain to Source Voltage (Vdss)Fall Time (Typ)Turn-Off Delay TimeContinuous Drain Current (ID)Threshold VoltageGate to Source Voltage (Vgs)Drain to Source Breakdown VoltageInput CapacitanceRecovery TimeDrain to Source ResistanceRds On MaxNominal VgsHeightLengthWidthREACH SVHCRadiation HardeningRoHS StatusLead FreeView Compare
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IRFH5020TR2PBFSurface MountSurface Mount8-PowerVDFN88-PQFN (5x6)Cut Tape (CT)HEXFET®2013Obsolete1 (Unlimited)55MOhm150°C-55°C3.6WMOSFET (Metal Oxide)1Single8.3W9.3 nsN-Channel55mOhm @ 7.5A, 10V5V @ 150μA2290pF @ 100V5.1A Ta54nC @ 10V7.7ns200V6 ns21 ns43A5V20V200V2.29nF69 ns55mOhm55 mΩ5 V838.2μm5.9944mm5mmNo SVHCNoRoHS CompliantLead Free-
-
Surface MountSurface Mount8-PowerVDFN88-PQFN (5x6)Cut Tape (CT)HEXFET®2013Obsolete1 (Unlimited)-150°C-55°C3.6WMOSFET (Metal Oxide)1-250W23 nsN-Channel1.4mOhm @ 50A, 10V2.35V @ 150μA6115pF @ 13V40A Ta 100A Tc83nC @ 10V72ns25V24 ns23 ns100A1.8V20V25V706pF41 ns2.2mOhm1.4 mΩ1.8 V838.2μm5.9944mm5mmNo SVHCNoRoHS Compliant-
-
-Surface Mount8-PowerTDFN-8-PQFN (5x6)Tape & Reel (TR)HEXFET®-Obsolete1 (Unlimited)----MOSFET (Metal Oxide)----N-Channel5.9mOhm @ 50A, 10V4V @ 150μA4.29pF @ 25V17A Ta 100A Tc98nC @ 10V-75V----------------ROHS3 Compliant-
-
Surface MountSurface Mount8-PowerTDFN88-PQFN (5x6)Digi-Reel®HEXFET®2013Obsolete1 (Unlimited)8.5MOhm150°C-55°C3.6WMOSFET (Metal Oxide)1Single3.6W9.1 nsN-Channel8.5mOhm @ 45A, 10V4V @ 100μA3110pF @ 25V14A Ta 75A Tc72nC @ 10V12ns75V6.5 ns20 ns14A2V20V75V3.11nF42 ns8.5mOhm8.5 mΩ----No SVHCNoRoHS CompliantLead Free
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