IRFH5020TR2PBF

Infineon Technologies IRFH5020TR2PBF

Part Number:
IRFH5020TR2PBF
Manufacturer:
Infineon Technologies
Ventron No:
2493747-IRFH5020TR2PBF
Description:
MOSFET N-CH 200V 5.1A 8VQFN
ECAD Model:
Datasheet:
IRFH5020TR2PBF

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Specifications
Infineon Technologies IRFH5020TR2PBF technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies IRFH5020TR2PBF.
  • Mount
    Surface Mount
  • Mounting Type
    Surface Mount
  • Package / Case
    8-PowerVDFN
  • Number of Pins
    8
  • Supplier Device Package
    8-PQFN (5x6)
  • Packaging
    Cut Tape (CT)
  • Series
    HEXFET®
  • Published
    2013
  • Part Status
    Obsolete
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Resistance
    55MOhm
  • Max Operating Temperature
    150°C
  • Min Operating Temperature
    -55°C
  • Max Power Dissipation
    3.6W
  • Technology
    MOSFET (Metal Oxide)
  • Number of Elements
    1
  • Element Configuration
    Single
  • Power Dissipation
    8.3W
  • Turn On Delay Time
    9.3 ns
  • FET Type
    N-Channel
  • Rds On (Max) @ Id, Vgs
    55mOhm @ 7.5A, 10V
  • Vgs(th) (Max) @ Id
    5V @ 150μA
  • Input Capacitance (Ciss) (Max) @ Vds
    2290pF @ 100V
  • Current - Continuous Drain (Id) @ 25°C
    5.1A Ta
  • Gate Charge (Qg) (Max) @ Vgs
    54nC @ 10V
  • Rise Time
    7.7ns
  • Drain to Source Voltage (Vdss)
    200V
  • Fall Time (Typ)
    6 ns
  • Turn-Off Delay Time
    21 ns
  • Continuous Drain Current (ID)
    43A
  • Threshold Voltage
    5V
  • Gate to Source Voltage (Vgs)
    20V
  • Drain to Source Breakdown Voltage
    200V
  • Input Capacitance
    2.29nF
  • Recovery Time
    69 ns
  • Drain to Source Resistance
    55mOhm
  • Rds On Max
    55 mΩ
  • Nominal Vgs
    5 V
  • Height
    838.2μm
  • Length
    5.9944mm
  • Width
    5mm
  • REACH SVHC
    No SVHC
  • Radiation Hardening
    No
  • RoHS Status
    RoHS Compliant
  • Lead Free
    Lead Free
Description
IRFH5020TR2PBF Overview
A device's maximal input capacitance is 2290pF @ 100V, which is defined as the capacitance between its input terminals with either input grounded.This device's continuous drain current (ID) is 43A, which represents the maximum continuous current it can conduct.In this device, the drain-source breakdown voltage is 200V and the drain-source breakdown voltage is the VDS at which a specified value of ID flows.Its turn-off delay time is 21 ns, which is the time to charge the device's input capacitance before drain current conduction begins.When a gate-to-source voltage (VGS) is applied to bias a MOSFET to the on state, the resistance between the drain and the source of the device is 55mOhm.Input capacitance charging takes time before drain current conduction begins, so the turn-on delay time is 9.3 ns.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 20V volts.An electrical device's threshold voltage is the point at which any of its operations will become active, and this transistor has a 5V threshold voltage.This transistor requires a 200V drain to source voltage (Vdss).

IRFH5020TR2PBF Features
a continuous drain current (ID) of 43A
a drain-to-source breakdown voltage of 200V voltage
the turn-off delay time is 21 ns
single MOSFETs transistor is 55mOhm
a threshold voltage of 5V
a 200V drain to source voltage (Vdss)


IRFH5020TR2PBF Applications
There are a lot of Infineon Technologies
IRFH5020TR2PBF applications of single MOSFETs transistors.


Consumer Appliances
Lighting
Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
IRFH5020TR2PBF More Descriptions
200V Single N-Channel HEXFET Power MOSFET in a 5mm X 6mm PQFN package
MOSFET, N-Channel, 200V, 41A, 59 mOhm, 36 nC Qg, PQFN
Trans MOSFET N-CH 200V 5.1A 8-Pin QFN EP T/R
MOSFET, N CH, 200V, 41A, PQFN56; Transistor Polarity:N Channel; Continuous Drain Current Id:5.1A; Drain Source Voltage Vds:200V; On Resistance Rds(on):47mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:5V; Power Dissipation Pd:8.3W; Operating Temperature Range:-55°C to 150°C; Transistor Case Style:PQFN; No. of Pins:8; SVHC:No SVHC (20-Jun-2011); Current Id Max:43A; Power Dissipation Pd:8.3W; Voltage Vgs Max:20V
Product Comparison
The three parts on the right have similar specifications to IRFH5020TR2PBF.
  • Image
    Part Number
    Manufacturer
    Mount
    Mounting Type
    Package / Case
    Number of Pins
    Supplier Device Package
    Packaging
    Series
    Published
    Part Status
    Moisture Sensitivity Level (MSL)
    Resistance
    Max Operating Temperature
    Min Operating Temperature
    Max Power Dissipation
    Technology
    Number of Elements
    Element Configuration
    Power Dissipation
    Turn On Delay Time
    FET Type
    Rds On (Max) @ Id, Vgs
    Vgs(th) (Max) @ Id
    Input Capacitance (Ciss) (Max) @ Vds
    Current - Continuous Drain (Id) @ 25°C
    Gate Charge (Qg) (Max) @ Vgs
    Rise Time
    Drain to Source Voltage (Vdss)
    Fall Time (Typ)
    Turn-Off Delay Time
    Continuous Drain Current (ID)
    Threshold Voltage
    Gate to Source Voltage (Vgs)
    Drain to Source Breakdown Voltage
    Input Capacitance
    Recovery Time
    Drain to Source Resistance
    Rds On Max
    Nominal Vgs
    Height
    Length
    Width
    REACH SVHC
    Radiation Hardening
    RoHS Status
    Lead Free
    View Compare
  • IRFH5020TR2PBF
    IRFH5020TR2PBF
    Surface Mount
    Surface Mount
    8-PowerVDFN
    8
    8-PQFN (5x6)
    Cut Tape (CT)
    HEXFET®
    2013
    Obsolete
    1 (Unlimited)
    55MOhm
    150°C
    -55°C
    3.6W
    MOSFET (Metal Oxide)
    1
    Single
    8.3W
    9.3 ns
    N-Channel
    55mOhm @ 7.5A, 10V
    5V @ 150μA
    2290pF @ 100V
    5.1A Ta
    54nC @ 10V
    7.7ns
    200V
    6 ns
    21 ns
    43A
    5V
    20V
    200V
    2.29nF
    69 ns
    55mOhm
    55 mΩ
    5 V
    838.2μm
    5.9944mm
    5mm
    No SVHC
    No
    RoHS Compliant
    Lead Free
    -
  • IRFH5250DTR2PBF
    Surface Mount
    Surface Mount
    8-PowerVDFN
    8
    8-PQFN (5x6)
    Cut Tape (CT)
    HEXFET®
    2013
    Obsolete
    1 (Unlimited)
    -
    150°C
    -55°C
    3.6W
    MOSFET (Metal Oxide)
    1
    -
    250W
    23 ns
    N-Channel
    1.4mOhm @ 50A, 10V
    2.35V @ 150μA
    6115pF @ 13V
    40A Ta 100A Tc
    83nC @ 10V
    72ns
    25V
    24 ns
    23 ns
    100A
    1.8V
    20V
    25V
    706pF
    41 ns
    2.2mOhm
    1.4 mΩ
    1.8 V
    838.2μm
    5.9944mm
    5mm
    No SVHC
    No
    RoHS Compliant
    -
  • IRFH5007TR2PBF
    -
    Surface Mount
    8-PowerTDFN
    -
    8-PQFN (5x6)
    Tape & Reel (TR)
    HEXFET®
    -
    Obsolete
    1 (Unlimited)
    -
    -
    -
    -
    MOSFET (Metal Oxide)
    -
    -
    -
    -
    N-Channel
    5.9mOhm @ 50A, 10V
    4V @ 150μA
    4.29pF @ 25V
    17A Ta 100A Tc
    98nC @ 10V
    -
    75V
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    ROHS3 Compliant
    -
  • IRFH7107TR2PBF
    Surface Mount
    Surface Mount
    8-PowerTDFN
    8
    8-PQFN (5x6)
    Digi-Reel®
    HEXFET®
    2013
    Obsolete
    1 (Unlimited)
    8.5MOhm
    150°C
    -55°C
    3.6W
    MOSFET (Metal Oxide)
    1
    Single
    3.6W
    9.1 ns
    N-Channel
    8.5mOhm @ 45A, 10V
    4V @ 100μA
    3110pF @ 25V
    14A Ta 75A Tc
    72nC @ 10V
    12ns
    75V
    6.5 ns
    20 ns
    14A
    2V
    20V
    75V
    3.11nF
    42 ns
    8.5mOhm
    8.5 mΩ
    -
    -
    -
    -
    No SVHC
    No
    RoHS Compliant
    Lead Free
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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