Home > Products > Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single > IRFH5015TRPBF
IRFH5015TRPBF

Infineon Technologies IRFH5015TRPBF

Part Number:
IRFH5015TRPBF
Manufacturer:
Infineon Technologies
Ventron No:
2482787-IRFH5015TRPBF
Description:
MOSFET N-CH 150V 10A 8VQFN
ECAD Model:
Datasheet:
IRFH5015TRPBF

Quick Request Quote

Please send RFQ , We will respond immediately.

Part Number
Quantity
Company
E-mail
Phone
Comments
Specifications
Infineon Technologies IRFH5015TRPBF technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies IRFH5015TRPBF.
  • Factory Lead Time
    12 Weeks
  • Mount
    Surface Mount
  • Mounting Type
    Surface Mount
  • Package / Case
    8-PowerTDFN
  • Number of Pins
    8
  • Transistor Element Material
    SILICON
  • Operating Temperature
    -55°C~150°C TJ
  • Packaging
    Tape & Reel (TR)
  • Series
    HEXFET®
  • Published
    2011
  • JESD-609 Code
    e3
  • Part Status
    Active
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    5
  • ECCN Code
    EAR99
  • Terminal Finish
    Matte Tin (Sn)
  • Subcategory
    FET General Purpose Power
  • Technology
    MOSFET (Metal Oxide)
  • Terminal Position
    DUAL
  • Peak Reflow Temperature (Cel)
    260
  • Time@Peak Reflow Temperature-Max (s)
    30
  • JESD-30 Code
    R-PDSO-N5
  • Number of Elements
    1
  • Configuration
    SINGLE WITH BUILT-IN DIODE
  • Number of Channels
    1
  • Power Dissipation-Max
    3.6W Ta 156W Tc
  • Operating Mode
    ENHANCEMENT MODE
  • Power Dissipation
    3.6W
  • Case Connection
    DRAIN
  • Turn On Delay Time
    9.4 ns
  • FET Type
    N-Channel
  • Transistor Application
    SWITCHING
  • Rds On (Max) @ Id, Vgs
    31m Ω @ 34A, 10V
  • Vgs(th) (Max) @ Id
    5V @ 150μA
  • Input Capacitance (Ciss) (Max) @ Vds
    2300pF @ 50V
  • Current - Continuous Drain (Id) @ 25°C
    10A Ta 56A Tc
  • Gate Charge (Qg) (Max) @ Vgs
    50nC @ 10V
  • Rise Time
    9.7ns
  • Drive Voltage (Max Rds On,Min Rds On)
    10V
  • Vgs (Max)
    ±20V
  • Fall Time (Typ)
    3.4 ns
  • Turn-Off Delay Time
    14 ns
  • Continuous Drain Current (ID)
    56A
  • Threshold Voltage
    5V
  • Gate to Source Voltage (Vgs)
    20V
  • Drain to Source Breakdown Voltage
    150V
  • Pulsed Drain Current-Max (IDM)
    220A
  • Avalanche Energy Rating (Eas)
    230 mJ
  • Max Junction Temperature (Tj)
    150°C
  • Height
    900μm
  • Length
    6.1468mm
  • Width
    5.15mm
  • REACH SVHC
    No SVHC
  • Radiation Hardening
    No
  • RoHS Status
    ROHS3 Compliant
  • Lead Free
    Lead Free
Description
IRFH5015TRPBF Description
The CoolMOSTM 7th generation platform from Infineon Technologies is a game-changing technology for high-voltage power MOSFETs based on the superjunction (SJ) principle. The 600V CoolMOSTM P6 series is replaced by the CoolMOSTM P7 series. Reduced ringing, superior body diode endurance against harsh commutation, and outstanding ESD performance combine the benefits of a fast switching SJ MOSFET with incredible ease of use.

IRFH5015TRPBF Features
RDSon is low (v 31 mQ)
Low PCB Thermal Resistance (vO8°C/W)
Rg was evaluated in its entirety.
(v09 mm) Low Profile
Standard Pinout in the Industry
Compatible with Current Surface Mounting Methodologies
Compliant with RoHS There is no lead, bromide, or halogen in this product.
In dustrial Qualificati on MSL1

IRFH5015TRPBF Applications
? Synchronous Rectification on the Primary Side
? Inverters for DC Motors (Inverters for DC Motors)
? Applications for DC-DC Bricks
? Converting Boost
IRFH5015TRPBF More Descriptions
Single N-Channel 150 V 31 mOhm 54 nC HEXFET® Power Mosfet - PQFN 5 x 6 mm
150V Single N-Channel HEXFET Power MOSFET in a 5mm X 6mm PQFN package, PG-TDSON-8, RoHSInfineon SCT
MOSFET, N-Channel, 150V, 56A, 31 mOhm, 33 nC Qg, PQFN | Infineon IRFH5015TRPBF
Trans MOSFET N-CH 150V 10A 8-Pin PQFN EP T/R / MOSFET N-CH 150V 10A 8VQFN
Benefits: RoHS Compliant | Target Applications: Battery Operated Drive; Isolated Primary Side MOSFETs; Isolated Secondary Side SyncRec MOSFETs
MOSFET Transistor; Transistor Polarity:N Channel; Continuous Drain Current Id:56A; Drain Source Voltage Vds:150V; On Resistance Rds(on):31mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:5V; Power Dissipation Pd:3.6W ;RoHS Compliant: Yes
Product Comparison
The three parts on the right have similar specifications to IRFH5015TRPBF.
  • Image
    Part Number
    Manufacturer
    Factory Lead Time
    Mount
    Mounting Type
    Package / Case
    Number of Pins
    Transistor Element Material
    Operating Temperature
    Packaging
    Series
    Published
    JESD-609 Code
    Part Status
    Moisture Sensitivity Level (MSL)
    Number of Terminations
    ECCN Code
    Terminal Finish
    Subcategory
    Technology
    Terminal Position
    Peak Reflow Temperature (Cel)
    Time@Peak Reflow Temperature-Max (s)
    JESD-30 Code
    Number of Elements
    Configuration
    Number of Channels
    Power Dissipation-Max
    Operating Mode
    Power Dissipation
    Case Connection
    Turn On Delay Time
    FET Type
    Transistor Application
    Rds On (Max) @ Id, Vgs
    Vgs(th) (Max) @ Id
    Input Capacitance (Ciss) (Max) @ Vds
    Current - Continuous Drain (Id) @ 25°C
    Gate Charge (Qg) (Max) @ Vgs
    Rise Time
    Drive Voltage (Max Rds On,Min Rds On)
    Vgs (Max)
    Fall Time (Typ)
    Turn-Off Delay Time
    Continuous Drain Current (ID)
    Threshold Voltage
    Gate to Source Voltage (Vgs)
    Drain to Source Breakdown Voltage
    Pulsed Drain Current-Max (IDM)
    Avalanche Energy Rating (Eas)
    Max Junction Temperature (Tj)
    Height
    Length
    Width
    REACH SVHC
    Radiation Hardening
    RoHS Status
    Lead Free
    Supplier Device Package
    Max Operating Temperature
    Min Operating Temperature
    Max Power Dissipation
    Element Configuration
    Drain to Source Voltage (Vdss)
    Input Capacitance
    Recovery Time
    Drain to Source Resistance
    Rds On Max
    Nominal Vgs
    Resistance
    View Compare
  • IRFH5015TRPBF
    IRFH5015TRPBF
    Infineon Technologies
    12 Weeks
    Surface Mount
    Surface Mount
    8-PowerTDFN
    8
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    HEXFET®
    2011
    e3
    Active
    1 (Unlimited)
    5
    EAR99
    Matte Tin (Sn)
    FET General Purpose Power
    MOSFET (Metal Oxide)
    DUAL
    260
    30
    R-PDSO-N5
    1
    SINGLE WITH BUILT-IN DIODE
    1
    3.6W Ta 156W Tc
    ENHANCEMENT MODE
    3.6W
    DRAIN
    9.4 ns
    N-Channel
    SWITCHING
    31m Ω @ 34A, 10V
    5V @ 150μA
    2300pF @ 50V
    10A Ta 56A Tc
    50nC @ 10V
    9.7ns
    10V
    ±20V
    3.4 ns
    14 ns
    56A
    5V
    20V
    150V
    220A
    230 mJ
    150°C
    900μm
    6.1468mm
    5.15mm
    No SVHC
    No
    ROHS3 Compliant
    Lead Free
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • IRFH5004TR2PBF
    IRFH5004TR2PBF
    Infineon Technologies
    -
    Surface Mount
    Surface Mount
    8-PowerVDFN
    8
    -
    -
    Cut Tape (CT)
    HEXFET®
    2010
    -
    Obsolete
    1 (Unlimited)
    -
    -
    -
    -
    MOSFET (Metal Oxide)
    -
    -
    -
    -
    1
    -
    -
    -
    -
    3.6W
    -
    13 ns
    N-Channel
    -
    2.6mOhm @ 50A, 10V
    4V @ 150μA
    4490pF @ 20V
    28A Ta 100A Tc
    110nC @ 10V
    13ns
    -
    -
    28 ns
    28 ns
    100A
    4V
    20V
    40V
    -
    -
    -
    838.2μm
    5.9944mm
    5mm
    No SVHC
    No
    RoHS Compliant
    -
    8-PQFN (5x6)
    150°C
    -55°C
    3.6W
    Single
    40V
    4.29nF
    48 ns
    2.6mOhm
    2.6 mΩ
    4 V
    -
    IRFH5015TRPBF vs IRFH5004TR2PBF
  • IRFH7107TR2PBF
    IRFH7107TR2PBF
    Infineon Technologies
    -
    Surface Mount
    Surface Mount
    8-PowerTDFN
    8
    -
    -
    Digi-Reel®
    HEXFET®
    2013
    -
    Obsolete
    1 (Unlimited)
    -
    -
    -
    -
    MOSFET (Metal Oxide)
    -
    -
    -
    -
    1
    -
    -
    -
    -
    3.6W
    -
    9.1 ns
    N-Channel
    -
    8.5mOhm @ 45A, 10V
    4V @ 100μA
    3110pF @ 25V
    14A Ta 75A Tc
    72nC @ 10V
    12ns
    -
    -
    6.5 ns
    20 ns
    14A
    2V
    20V
    75V
    -
    -
    -
    -
    -
    -
    No SVHC
    No
    RoHS Compliant
    Lead Free
    8-PQFN (5x6)
    150°C
    -55°C
    3.6W
    Single
    75V
    3.11nF
    42 ns
    8.5mOhm
    8.5 mΩ
    -
    8.5MOhm
    IRFH5015TRPBF vs IRFH7107TR2PBF
  • IRFH5204TR2PBF
    IRFH5204TR2PBF
    Infineon Technologies
    -
    Surface Mount
    Surface Mount
    8-VQFN Exposed Pad
    8
    -
    -
    Cut Tape (CT)
    HEXFET®
    2011
    -
    Obsolete
    1 (Unlimited)
    -
    -
    -
    -
    MOSFET (Metal Oxide)
    -
    -
    -
    -
    1
    -
    -
    -
    -
    3.6W
    -
    8.4 ns
    N-Channel
    -
    4.3mOhm @ 50A, 10V
    4V @ 100μA
    2460pF @ 25V
    22A Ta 100A Tc
    65nC @ 10V
    14ns
    -
    -
    8.3 ns
    18 ns
    22A
    4V
    20V
    40V
    -
    -
    -
    900μm
    6mm
    5mm
    No SVHC
    No
    RoHS Compliant
    Lead Free
    PQFN (5x6)
    150°C
    -55°C
    3.6W
    Single
    40V
    2.46nF
    45 ns
    4.3mOhm
    4.3 mΩ
    4 V
    4.3MOhm
    IRFH5015TRPBF vs IRFH5204TR2PBF
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS
Related parts for IRFH5015TRPBF
Popular Search Part Number Related Keywords Search Tags

Latest News

  • cost

    Help you to save your cost and time.

  • package

    Reliable package for your goods.

  • fast

    Fast Reliable Delivery to save time.

  • service

    Quality premium after-sale service.