Vishay Siliconix IRFBG30PBF

Name: IRFBG30PBF
Brand: Vishay Siliconix
SKU: 2479889-IRFBG30PBF
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: IRFBG30PBF

Manufacturer:: Vishay Siliconix

Ventron No:: 2479889-IRFBG30PBF

Description:: MOSFET N-CH 1000V 3.1A TO-220AB

ECAD Model:

Datasheet:: IRFBG30PBF

Specifications

Vishay Siliconix IRFBG30PBF technical specifications, attributes, parameters and parts with similar specifications to Vishay Siliconix IRFBG30PBF.

Factory Lead Time
8 Weeks
Contact Plating
Tin
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-220-3
Number of Pins
3
Supplier Device Package
TO-220AB
Weight
6.000006g
Operating Temperature
-55°C~150°C TJ
Packaging
Tube
Published
1997
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Resistance
5Ohm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Voltage - Rated DC
1kV
Technology
MOSFET (Metal Oxide)
Current Rating
3.1A
Number of Elements
1
Number of Channels
1
Power Dissipation-Max
125W Tc
Element Configuration
Single
Power Dissipation
125W
Turn On Delay Time
12 ns
FET Type
N-Channel
Rds On (Max) @ Id, Vgs
5Ohm @ 1.9A, 10V
Vgs(th) (Max) @ Id
4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds
980pF @ 25V
Current - Continuous Drain (Id) @ 25°C
3.1A Tc
Gate Charge (Qg) (Max) @ Vgs
80nC @ 10V
Rise Time
25ns
Drain to Source Voltage (Vdss)
1000V
Drive Voltage (Max Rds On,Min Rds On)
10V
Vgs (Max)
±20V
Fall Time (Typ)
20 ns
Turn-Off Delay Time
89 ns
Continuous Drain Current (ID)
3.1A
Threshold Voltage
2V
Gate to Source Voltage (Vgs)
20V
Drain to Source Breakdown Voltage
1kV
Input Capacitance
980pF
Recovery Time
620 ns
Max Junction Temperature (Tj)
150°C
Drain to Source Resistance
5Ohm
Rds On Max
5 Ω
Nominal Vgs
4 V
Height
19.89mm
Length
10.41mm
Width
4.7mm
REACH SVHC
Unknown
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free

Description

IRFBG30PBF Overview
With either input grounded, the input capacitance parameter, CI, represents the capacitance between the input terminals of the op amp. This device has a maximum input capacitance of 980pF @ 25V.A device's drain current is its maximum continuous current, and this device has a continuous drain current (ID) of 3.1A.With a drain-source breakdown voltage of 1kV and a drain-source current flow rate of 1, this device has a drain-source breakdown voltage of 1kV.The turn-off delay time is the amount of time it takes to charge the input capacitance of the device before drain current conduction can begin, and it is 89 ns.When a specific gate-to-source voltage (VGS) is applied to bias a MOSFET into the on state, a drain-to-source resistance of 5Ohm exists between the drain and source.Input capacitance charging takes time before drain current conduction begins, so the turn-on delay time is 12 ns.Single MOSFETs transistor is the voltage that falls across the gate-source terminal of a FET transistor that is called the gate-source voltage, VGS.2V is the threshold voltage at which an electrical device activates any of its operations.Single MOSFETs transistor is necessary to have a drain to source voltage (Vdss) of 1000V.Using drive voltage (10V) reduces this device's overall power consumption.

IRFBG30PBF Features
a continuous drain current (ID) of 3.1A
a drain-to-source breakdown voltage of 1kV voltage
the turn-off delay time is 89 ns
single MOSFETs transistor is 5Ohm
a threshold voltage of 2V
a 1000V drain to source voltage (Vdss)

IRFBG30PBF Applications
There are a lot of Vishay Siliconix
IRFBG30PBF applications of single MOSFETs transistors.

Lighting
Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification

IRFBG30PBF More Descriptions

Single N-Channel 1000 V 5 Ohms Flange Mount Power Mosfet - TO-220-3
In a Tube of 50, IRFBG30PBF N-Channel MOSFET, 3.1 A, 1000 V, 3-Pin TO-220AB Vishay
Power Field-Effect Transistor, 3.1A I(D), 1000V, 5ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
N Channel Mosfet, 1Kv, 3.1A, To-220; Channel Type:N Channel; Drain Source Voltage Vds:1Kv; Continuous Drain Current Id:3.1A; Transistor Mounting:Through Hole; Rds(On) Test Voltage:10V; Gate Source Threshold Voltage Max:4V; Msl:- Rohs Compliant: No |Vishay IRFBG30PBF.
MOSFET, N, 1000V, 3.1A, TO-220; Transistor Type:MOSFET; Transistor Polarity:N; Voltage, Vds Typ:1000V; Current, Id Cont:3.1A; Resistance, Rds On:5ohm; Voltage, Vgs Rds on Measurement:10V; Voltage, Vgs th Typ:4V; Case Style:TO-220AB; Termination Type:Through Hole; Current, Idm Pulse:12A; Lead Spacing:2.54mm; No. of Pins:3; Power Dissipation:125W; Power, Pd:125W; Temperature, Current:25°C; Temperature, Full Power Rating:25°C; Thermal Resistance, Junction to Case A:1°C/W; Transistors, No. of:1; Voltage, Vds Max:1000V

Product Comparison

The three parts on the right have similar specifications to IRFBG30PBF.

Image

Part Number

Manufacturer

Factory Lead Time

Contact Plating

Mount

Mounting Type

Package / Case

Number of Pins

Supplier Device Package

Weight

Operating Temperature

Packaging

Published

Part Status

Moisture Sensitivity Level (MSL)

Resistance

Max Operating Temperature

Min Operating Temperature

Voltage - Rated DC

Technology

Current Rating

Number of Elements

Number of Channels

Power Dissipation-Max

Element Configuration

Power Dissipation

Turn On Delay Time

FET Type

Rds On (Max) @ Id, Vgs

Vgs(th) (Max) @ Id

Input Capacitance (Ciss) (Max) @ Vds

Current - Continuous Drain (Id) @ 25°C

Gate Charge (Qg) (Max) @ Vgs

Rise Time

Drain to Source Voltage (Vdss)

Drive Voltage (Max Rds On,Min Rds On)

Vgs (Max)

Fall Time (Typ)

Turn-Off Delay Time

Continuous Drain Current (ID)

Threshold Voltage

Gate to Source Voltage (Vgs)

Drain to Source Breakdown Voltage

Input Capacitance

Recovery Time

Max Junction Temperature (Tj)

Drain to Source Resistance

Rds On Max

Nominal Vgs

Height

Length

Width

REACH SVHC

RoHS Status

Lead Free

Surface Mount

Transistor Element Material

Series

Number of Terminations

ECCN Code

Terminal Position

Peak Reflow Temperature (Cel)

Time@Peak Reflow Temperature-Max (s)

JESD-30 Code

Qualification Status

Configuration

Operating Mode

Case Connection

Transistor Application

Drain Current-Max (Abs) (ID)

Drain-source On Resistance-Max

Pulsed Drain Current-Max (IDM)

DS Breakdown Voltage-Min

View Compare
IRFBG30PBF

Vishay Siliconix

8 Weeks

Tin

Through Hole

Through Hole

TO-220-3

3

TO-220AB

6.000006g

-55°C~150°C TJ

Tube

1997

Active

1 (Unlimited)

5Ohm

150°C

-55°C

1kV

MOSFET (Metal Oxide)

3.1A

1

1

125W Tc

Single

125W

12 ns

N-Channel

5Ohm @ 1.9A, 10V

4V @ 250μA

980pF @ 25V

3.1A Tc

80nC @ 10V

25ns

1000V

10V

±20V

20 ns

89 ns

3.1A

2V

20V

1kV

980pF

620 ns

150°C

5Ohm

5 Ω

4 V

19.89mm

10.41mm

4.7mm

Unknown

ROHS3 Compliant

Lead Free

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-
IRFBA1404P

Infineon Technologies

-

-

-

Through Hole

TO-273AA

-

-

-

-40°C~175°C TJ

Tube

2010

Obsolete

1 (Unlimited)

-

-

-

-

MOSFET (Metal Oxide)

-

1

-

300W Tc

-

-

-

N-Channel

3.7m Ω @ 95A, 10V

4V @ 250μA

7360pF @ 25V

206A Tc

200nC @ 10V

-

40V

10V

±20V

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

Non-RoHS Compliant

-

NO

SILICON

HEXFET®

3

EAR99

SINGLE

NOT SPECIFIED

NOT SPECIFIED

R-PSIP-T3

Not Qualified

SINGLE WITH BUILT-IN DIODE

ENHANCEMENT MODE

DRAIN

SWITCHING

95A

0.0037Ohm

650A

40V

IRFBG30PBF vs IRFBA1404P
IRFB16N50KPBF

Vishay Siliconix

-

-

Through Hole

Through Hole

TO-220-3

3

TO-220AB

6.000006g

-55°C~150°C TJ

Tube

2004

Obsolete

1 (Unlimited)

-

150°C

-55°C

500V

MOSFET (Metal Oxide)

17A

-

1

280W Tc

Single

280W

20 ns

N-Channel

350mOhm @ 10A, 10V

5V @ 250μA

2210pF @ 25V

17A Tc

89nC @ 10V

77ns

500V

10V

±30V

30 ns

38 ns

17A

-

30V

500V

2.21nF

-

-

350mOhm

350 mΩ

-

9.01mm

10.41mm

4.7mm

-

ROHS3 Compliant

Lead Free

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

IRFBG30PBF vs IRFB16N50KPBF
IRFB7787PBF

Infineon Technologies

12 Weeks

-

Through Hole

Through Hole

TO-220-3

3

-

6.000006g

-55°C~175°C TJ

Tube

2001

Active

1 (Unlimited)

-

-

-

-

MOSFET (Metal Oxide)

-

-

1

125W Tc

Single

-

11 ns

N-Channel

8.4m Ω @ 46A, 10V

3.7V @ 100μA

4020pF @ 25V

76A Tc

109nC @ 10V

48ns

75V

6V 10V

±20V

39 ns

51 ns

76A

-

20V

-

-

-

-

-

-

-

16.51mm

10.67mm

4.83mm

No SVHC

ROHS3 Compliant

Lead Free

-

-

HEXFET®, StrongIRFET™

-

EAR99

-

NOT SPECIFIED

NOT SPECIFIED

-

-

-

-

-

-

-

-

-

-

IRFBG30PBF vs IRFB7787PBF

Certification

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IRFBG30PBF Specification

Part Number	Manufacturers	Description	Stock	Price
IRFBG30PBF DISTI #V99:2348_09218694	Vishay Intertechnologies	Trans MOSFET N-CH 1KV 3.1A 3-Pin(3 Tab) TO-220AB RoHS: Compliant	3375	1 $2.1937 10 $1.751 25 $1.7282 50 $1.6301 100 $1.4341 500 $1.124 1000 $1.1195 2500 $0.92
IRFBG30PBF DISTI #V36:1790_09218694	Vishay Intertechnologies	Trans MOSFET N-CH 1KV 3.1A 3-Pin(3 Tab) TO-220AB RoHS: Compliant	900	1 $2.1937 10 $1.751 25 $1.7282 50 $1.6301 100 $1.4341 500 $1.124 1000 $1.1195 2500 $0.92
IRFBG30PBF DISTI #IRFBG30PBF-ND	Vishay Siliconix	MOSFET N-CH 1000V 3.1A TO-220AB RoHS: Compliant	1874	1 $2.02 10 $1.812 50 $1.7092 100 $1.4562 500 $1.1964 2500 $0.92294 5000 $0.88875
IRFBG30PBF DISTI #26036495	Vishay Intertechnologies	Trans MOSFET N-CH 1KV 3.1A 3-Pin(3 Tab) TO-220AB RoHS: Compliant	14146	22 $0.4556
IRFBG30PBF DISTI #33611818	Vishay Intertechnologies	Trans MOSFET N-CH 1KV 3.1A 3-Pin(3 Tab) TO-220AB RoHS: Compliant	5100	50 $0.9703
IRFBG30PBF DISTI #31970787	Vishay Intertechnologies	Trans MOSFET N-CH 1KV 3.1A 3-Pin(3 Tab) TO-220AB RoHS: Compliant	3375	9 $2.1937
IRFBG30PBF DISTI #33957268	Vishay Intertechnologies	Trans MOSFET N-CH 1KV 3.1A 3-Pin(3 Tab) TO-220AB RoHS: Compliant	900	10 $2.1937
IRFBG30PBF DISTI #IRFBG30PBF	Vishay Intertechnologies	Trans MOSFET N-CH 1KV 3.1A 3-Pin (3 Tab) TO-220AB RoHS: Not Compliant	3289	1000 $0.7278 2000 $0.70621 3000 $0.67751 5000 $0.65876 10000 $0.64103
IRFBG30PBF DISTI #IRFBG30PBF	Vishay Intertechnologies	Trans MOSFET N-CH 1KV 3.1A 3-Pin (3 Tab) TO-220AB RoHS: Compliant	11200	1 $1.0999 10 $0.7889 25 $0.6399 50 $0.5649 100 $0.5569 500 $0.5479 1000 $0.5409
IRFBG30PBF DISTI #IRFBG30PBF	Vishay Intertechnologies	Trans MOSFET N-CH 1KV 3.1A 3-Pin (3 Tab) TO-220AB RoHS: Compliant	0
IRFBG30PBF DISTI #63J6702	Vishay Intertechnologies	Trans MOSFET N-CH 1KV 3.1A 3-Pin (3 Tab) TO-220AB RoHS: Not Compliant	0	1 $1.95 10 $1.62 25 $1.5 50 $1.38 100 $1.26 500 $1.13 1000 $1.08
IRFBG30PBF DISTI #38K2473	Vishay Intertechnologies	Power MOSFET, N Channel, 3.1 A, 1 kV, 5 ohm, 10 V,	863	1 $1.95 10 $1.64 25 $1.53 50 $1.42 100 $1.3 500 $1.18 1000 $1.14 2500 $1.11
IRFBG30PBF DISTI #63J6702	Vishay Intertechnologies	N CHANNEL MOSFET, 1KV, 3.1A, TO-220, Transistor P	696	1 $2.24 10 $1.81 25 $1.75 50 $1.69 100 $1.63
IRFBG30PBF. DISTI #27AC6757	Vishay Intertechnologies	MOSFET N-CHANNEL 1000V ROHS COMPLIANT: NO	3289	1 $2.29 10 $1.85 25 $1.75 50 $1.69 100 $1.63
IRFBG30PBF DISTI #70078890	Vishay Intertechnologies	MOSFET, Power, N-Ch, VDSS 1000V, RDS(ON) 5Ohms RoHS: Compliant	2952	1 $1.945 25 $1.879 100 $1.736 250 $1.593 500 $1.472
IRFBG30PBF DISTI #70459440	Vishay Siliconix	1000V Single N-Channel HEXFET RoHS: Compliant	0	1000 $3.345 2000 $2.688
IRFBG30PBF DISTI #	Vishay Intertechnologies	Single N-Channel 1000 V 5 Ohms Flange Mount Power RoHS: Compliant	8479	25 $1.7 100 $0.935 250 $0.83 500 $0.755 1000 $0.69
IRFBG30PBF DISTI #844-IRFBG30PBF	Vishay Intertechnologies	MOSFET N-CH 1000V HEXFET MOSFET RoHS: Compliant	2530	1 $1.96 10 $1.79 100 $1.41 500 $1.15 1000 $0.984 2500 $0.919 5000 $0.899 10000 $0.782
IRFBG30PBF DISTI #5411146P	Vishay Intertechnologies	MOSFET N-CHANNEL 1KV 3.1A TO220AB, TU	1025	25 $0.96 100 $0.8 250 $0.77 500 $0.74
IRFBG30PBF DISTI #5411146	Vishay Intertechnologies	MOSFET N-CHANNEL 1KV 3.1A TO220AB, EA	455	1 $2 25 $0.96 100 $0.8 250 $0.77 500 $0.74
IRFBG30PBF DISTI #IRFBG30PBF	Vishay Intertechnologies	Transistor: N-MOSFET, unipolar, 1000V, 2A, 125	427	1 $0.9 5 $0.87 25 $0.78 100 $0.69 250 $0.62
IRFBG30PBF DISTI #IRFBG30PBF	Vishay Intertechnologies	N-Ch 1000V 3,1A 125W 5R TO220AB RoHS: Compliant	2975	25 $0.5875 100 $0.5075 300 $0.4675 500 $0.45
IRFBG30PBF DISTI #8648905	Vishay Intertechnologies	MOSFET, N, 1000V, 3.1A, TO-220 RoHS: Compliant	920	1 $3.04 10 $2.74 50 $2.58 100 $2.2 500 $1.81 2500 $1.4 5000 $1.38
IRFBG30PBF. DISTI #1351020	Vishay Intertechnologies	RoHS: Compliant	696	1 $3.04 10 $2.74 50 $2.58 100 $2.2 500 $1.81
IRFBG30PBF DISTI #	Vishay Intertechnologies	MOSFET N-CH 1000V HEXFET MOSFET RoHS: Compliant	5250	50 $1.024 100 $0.906 250 $0.824 500 $0.806 1000 $0.762
IRFBG30PBF DISTI #XSFP00000007118	Vishay Siliconix	RoHS: Compliant	4578	107 $1.34 4578 $1.25
IRFBG30PBF DISTI #XSKDRABV0021442	Vishay Intertechnologies	VSSOP-10 RoHS: Compliant	9050	1000 $0.81 9050 $0.756
IRFBG30PBF DISTI #8648905	Vishay Intertechnologies	MOSFET, N, 1000V, 3.1A, TO-220	918	1 $1.95 10 $1.41 100 $1.25 250 $1.12 500 $0.998

IRFBG30~~(2)~~
IRFBG3~~(2)~~
IRFBG~~(4)~~
IRFB~~(57)~~
IRF~~(69)~~

Vishay Siliconix IRFBG30PBF

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