IRFBE30

Vishay Siliconix IRFBE30

Part Number:
IRFBE30
Manufacturer:
Vishay Siliconix
Ventron No:
2488267-IRFBE30
Description:
MOSFET N-CH 800V 4.1A TO-220AB
ECAD Model:
Datasheet:
IRFBE30

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Specifications
Vishay Siliconix IRFBE30 technical specifications, attributes, parameters and parts with similar specifications to Vishay Siliconix IRFBE30.
  • Mount
    Through Hole
  • Mounting Type
    Through Hole
  • Package / Case
    TO-220-3
  • Number of Pins
    3
  • Supplier Device Package
    TO-220AB
  • Weight
    6.000006g
  • Operating Temperature
    -55°C~150°C TJ
  • Packaging
    Tube
  • Published
    2014
  • Part Status
    Obsolete
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Max Operating Temperature
    150°C
  • Min Operating Temperature
    -55°C
  • Voltage - Rated DC
    800V
  • Technology
    MOSFET (Metal Oxide)
  • Current Rating
    4.1A
  • Number of Elements
    1
  • Number of Channels
    1
  • Power Dissipation-Max
    125W Tc
  • Element Configuration
    Single
  • Power Dissipation
    125W
  • Turn On Delay Time
    12 ns
  • FET Type
    N-Channel
  • Rds On (Max) @ Id, Vgs
    3Ohm @ 2.5A, 10V
  • Vgs(th) (Max) @ Id
    4V @ 250μA
  • Input Capacitance (Ciss) (Max) @ Vds
    1300pF @ 25V
  • Current - Continuous Drain (Id) @ 25°C
    4.1A Tc
  • Gate Charge (Qg) (Max) @ Vgs
    78nC @ 10V
  • Rise Time
    33ns
  • Drain to Source Voltage (Vdss)
    800V
  • Drive Voltage (Max Rds On,Min Rds On)
    10V
  • Vgs (Max)
    ±20V
  • Fall Time (Typ)
    30 ns
  • Turn-Off Delay Time
    82 ns
  • Continuous Drain Current (ID)
    4.1A
  • Gate to Source Voltage (Vgs)
    20V
  • Drain to Source Breakdown Voltage
    800V
  • Input Capacitance
    1.3nF
  • Drain to Source Resistance
    3Ohm
  • Rds On Max
    3 Ω
  • Height
    9.01mm
  • Length
    10.41mm
  • Width
    4.7mm
  • RoHS Status
    Non-RoHS Compliant
  • Lead Free
    Contains Lead
Description
IRFBE30 Overview
CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 1300pF @ 25V.In this device, the drain current (ID) is equal to the continuous current transistor can conduct.This device has 800V drain-to-source breakdown voltage, where VDS corresponds to the ID at which a specified value of ID flows and VGS equals 800V.As a result of its turn-off delay time, which is 82 ns, the device has taken time to charge its input capacitance before drain current conduction begins.In a MOSFET, Drain to Source Resistance is the resistance between the drain and the source when gate-to-source voltage (VGS) is applied to bias it into the on state; in this device, this resistance is 3Ohm.Input capacitance charge delays drain current conduction until the time it takes to charge input capacitance reaches 12 ns.Gate-source voltages (VGS) are voltages that fall across the gate-source terminal of FET transistors. VGS is sometimes 20VV.The transistor must receive a 800V drain to source voltage (Vdss) in order to function.In addition to reducing power consumption, this device uses drive voltage (10V).

IRFBE30 Features
a continuous drain current (ID) of 4.1A
a drain-to-source breakdown voltage of 800V voltage
the turn-off delay time is 82 ns
single MOSFETs transistor is 3Ohm
a 800V drain to source voltage (Vdss)


IRFBE30 Applications
There are a lot of Vishay Siliconix
IRFBE30 applications of single MOSFETs transistors.


DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
Lighting, Server, Telecom and UPS.
IRFBE30 More Descriptions
Power MOSFET(Vdss=800V, Rds(on)=3.0ohm, Id=4.1A) | MOSFET N-CH 800V 4.1A TO-220AB
Trans MOSFET N-CH 800V 4.1A 3-Pin(3 Tab) TO-220AB
MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:800V; Continuous Drain Current, Id:4.1A; On-Resistance, Rds(on):3ohm; Rds(on) Test Voltage, Vgs:10V; Package/Case:TO-220AB; Drain Source On Resistance @ 10V:3000mohm RoHS Compliant: No
Product Comparison
The three parts on the right have similar specifications to IRFBE30.
  • Image
    Part Number
    Manufacturer
    Mount
    Mounting Type
    Package / Case
    Number of Pins
    Supplier Device Package
    Weight
    Operating Temperature
    Packaging
    Published
    Part Status
    Moisture Sensitivity Level (MSL)
    Max Operating Temperature
    Min Operating Temperature
    Voltage - Rated DC
    Technology
    Current Rating
    Number of Elements
    Number of Channels
    Power Dissipation-Max
    Element Configuration
    Power Dissipation
    Turn On Delay Time
    FET Type
    Rds On (Max) @ Id, Vgs
    Vgs(th) (Max) @ Id
    Input Capacitance (Ciss) (Max) @ Vds
    Current - Continuous Drain (Id) @ 25°C
    Gate Charge (Qg) (Max) @ Vgs
    Rise Time
    Drain to Source Voltage (Vdss)
    Drive Voltage (Max Rds On,Min Rds On)
    Vgs (Max)
    Fall Time (Typ)
    Turn-Off Delay Time
    Continuous Drain Current (ID)
    Gate to Source Voltage (Vgs)
    Drain to Source Breakdown Voltage
    Input Capacitance
    Drain to Source Resistance
    Rds On Max
    Height
    Length
    Width
    RoHS Status
    Lead Free
    Surface Mount
    Transistor Element Material
    Series
    Number of Terminations
    ECCN Code
    Terminal Position
    Peak Reflow Temperature (Cel)
    Time@Peak Reflow Temperature-Max (s)
    JESD-30 Code
    Qualification Status
    Configuration
    Operating Mode
    Case Connection
    Transistor Application
    Drain Current-Max (Abs) (ID)
    Drain-source On Resistance-Max
    Pulsed Drain Current-Max (IDM)
    DS Breakdown Voltage-Min
    Factory Lead Time
    REACH SVHC
    View Compare
  • IRFBE30
    IRFBE30
    Through Hole
    Through Hole
    TO-220-3
    3
    TO-220AB
    6.000006g
    -55°C~150°C TJ
    Tube
    2014
    Obsolete
    1 (Unlimited)
    150°C
    -55°C
    800V
    MOSFET (Metal Oxide)
    4.1A
    1
    1
    125W Tc
    Single
    125W
    12 ns
    N-Channel
    3Ohm @ 2.5A, 10V
    4V @ 250μA
    1300pF @ 25V
    4.1A Tc
    78nC @ 10V
    33ns
    800V
    10V
    ±20V
    30 ns
    82 ns
    4.1A
    20V
    800V
    1.3nF
    3Ohm
    3 Ω
    9.01mm
    10.41mm
    4.7mm
    Non-RoHS Compliant
    Contains Lead
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • IRFBA1404P
    -
    Through Hole
    TO-273AA
    -
    -
    -
    -40°C~175°C TJ
    Tube
    2010
    Obsolete
    1 (Unlimited)
    -
    -
    -
    MOSFET (Metal Oxide)
    -
    1
    -
    300W Tc
    -
    -
    -
    N-Channel
    3.7m Ω @ 95A, 10V
    4V @ 250μA
    7360pF @ 25V
    206A Tc
    200nC @ 10V
    -
    40V
    10V
    ±20V
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    Non-RoHS Compliant
    -
    NO
    SILICON
    HEXFET®
    3
    EAR99
    SINGLE
    NOT SPECIFIED
    NOT SPECIFIED
    R-PSIP-T3
    Not Qualified
    SINGLE WITH BUILT-IN DIODE
    ENHANCEMENT MODE
    DRAIN
    SWITCHING
    95A
    0.0037Ohm
    650A
    40V
    -
    -
  • IRFB16N50KPBF
    Through Hole
    Through Hole
    TO-220-3
    3
    TO-220AB
    6.000006g
    -55°C~150°C TJ
    Tube
    2004
    Obsolete
    1 (Unlimited)
    150°C
    -55°C
    500V
    MOSFET (Metal Oxide)
    17A
    -
    1
    280W Tc
    Single
    280W
    20 ns
    N-Channel
    350mOhm @ 10A, 10V
    5V @ 250μA
    2210pF @ 25V
    17A Tc
    89nC @ 10V
    77ns
    500V
    10V
    ±30V
    30 ns
    38 ns
    17A
    30V
    500V
    2.21nF
    350mOhm
    350 mΩ
    9.01mm
    10.41mm
    4.7mm
    ROHS3 Compliant
    Lead Free
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • IRFB7787PBF
    Through Hole
    Through Hole
    TO-220-3
    3
    -
    6.000006g
    -55°C~175°C TJ
    Tube
    2001
    Active
    1 (Unlimited)
    -
    -
    -
    MOSFET (Metal Oxide)
    -
    -
    1
    125W Tc
    Single
    -
    11 ns
    N-Channel
    8.4m Ω @ 46A, 10V
    3.7V @ 100μA
    4020pF @ 25V
    76A Tc
    109nC @ 10V
    48ns
    75V
    6V 10V
    ±20V
    39 ns
    51 ns
    76A
    20V
    -
    -
    -
    -
    16.51mm
    10.67mm
    4.83mm
    ROHS3 Compliant
    Lead Free
    -
    -
    HEXFET®, StrongIRFET™
    -
    EAR99
    -
    NOT SPECIFIED
    NOT SPECIFIED
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    12 Weeks
    No SVHC
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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