Vishay Siliconix IRFBE30
- Part Number:
- IRFBE30
- Manufacturer:
- Vishay Siliconix
- Ventron No:
- 2488267-IRFBE30
- Description:
- MOSFET N-CH 800V 4.1A TO-220AB
- Datasheet:
- IRFBE30
Vishay Siliconix IRFBE30 technical specifications, attributes, parameters and parts with similar specifications to Vishay Siliconix IRFBE30.
- MountThrough Hole
- Mounting TypeThrough Hole
- Package / CaseTO-220-3
- Number of Pins3
- Supplier Device PackageTO-220AB
- Weight6.000006g
- Operating Temperature-55°C~150°C TJ
- PackagingTube
- Published2014
- Part StatusObsolete
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Max Operating Temperature150°C
- Min Operating Temperature-55°C
- Voltage - Rated DC800V
- TechnologyMOSFET (Metal Oxide)
- Current Rating4.1A
- Number of Elements1
- Number of Channels1
- Power Dissipation-Max125W Tc
- Element ConfigurationSingle
- Power Dissipation125W
- Turn On Delay Time12 ns
- FET TypeN-Channel
- Rds On (Max) @ Id, Vgs3Ohm @ 2.5A, 10V
- Vgs(th) (Max) @ Id4V @ 250μA
- Input Capacitance (Ciss) (Max) @ Vds1300pF @ 25V
- Current - Continuous Drain (Id) @ 25°C4.1A Tc
- Gate Charge (Qg) (Max) @ Vgs78nC @ 10V
- Rise Time33ns
- Drain to Source Voltage (Vdss)800V
- Drive Voltage (Max Rds On,Min Rds On)10V
- Vgs (Max)±20V
- Fall Time (Typ)30 ns
- Turn-Off Delay Time82 ns
- Continuous Drain Current (ID)4.1A
- Gate to Source Voltage (Vgs)20V
- Drain to Source Breakdown Voltage800V
- Input Capacitance1.3nF
- Drain to Source Resistance3Ohm
- Rds On Max3 Ω
- Height9.01mm
- Length10.41mm
- Width4.7mm
- RoHS StatusNon-RoHS Compliant
- Lead FreeContains Lead
IRFBE30 Overview
CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 1300pF @ 25V.In this device, the drain current (ID) is equal to the continuous current transistor can conduct.This device has 800V drain-to-source breakdown voltage, where VDS corresponds to the ID at which a specified value of ID flows and VGS equals 800V.As a result of its turn-off delay time, which is 82 ns, the device has taken time to charge its input capacitance before drain current conduction begins.In a MOSFET, Drain to Source Resistance is the resistance between the drain and the source when gate-to-source voltage (VGS) is applied to bias it into the on state; in this device, this resistance is 3Ohm.Input capacitance charge delays drain current conduction until the time it takes to charge input capacitance reaches 12 ns.Gate-source voltages (VGS) are voltages that fall across the gate-source terminal of FET transistors. VGS is sometimes 20VV.The transistor must receive a 800V drain to source voltage (Vdss) in order to function.In addition to reducing power consumption, this device uses drive voltage (10V).
IRFBE30 Features
a continuous drain current (ID) of 4.1A
a drain-to-source breakdown voltage of 800V voltage
the turn-off delay time is 82 ns
single MOSFETs transistor is 3Ohm
a 800V drain to source voltage (Vdss)
IRFBE30 Applications
There are a lot of Vishay Siliconix
IRFBE30 applications of single MOSFETs transistors.
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
Lighting, Server, Telecom and UPS.
CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 1300pF @ 25V.In this device, the drain current (ID) is equal to the continuous current transistor can conduct.This device has 800V drain-to-source breakdown voltage, where VDS corresponds to the ID at which a specified value of ID flows and VGS equals 800V.As a result of its turn-off delay time, which is 82 ns, the device has taken time to charge its input capacitance before drain current conduction begins.In a MOSFET, Drain to Source Resistance is the resistance between the drain and the source when gate-to-source voltage (VGS) is applied to bias it into the on state; in this device, this resistance is 3Ohm.Input capacitance charge delays drain current conduction until the time it takes to charge input capacitance reaches 12 ns.Gate-source voltages (VGS) are voltages that fall across the gate-source terminal of FET transistors. VGS is sometimes 20VV.The transistor must receive a 800V drain to source voltage (Vdss) in order to function.In addition to reducing power consumption, this device uses drive voltage (10V).
IRFBE30 Features
a continuous drain current (ID) of 4.1A
a drain-to-source breakdown voltage of 800V voltage
the turn-off delay time is 82 ns
single MOSFETs transistor is 3Ohm
a 800V drain to source voltage (Vdss)
IRFBE30 Applications
There are a lot of Vishay Siliconix
IRFBE30 applications of single MOSFETs transistors.
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
Lighting, Server, Telecom and UPS.
IRFBE30 More Descriptions
Power MOSFET(Vdss=800V, Rds(on)=3.0ohm, Id=4.1A) | MOSFET N-CH 800V 4.1A TO-220AB
Trans MOSFET N-CH 800V 4.1A 3-Pin(3 Tab) TO-220AB
MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:800V; Continuous Drain Current, Id:4.1A; On-Resistance, Rds(on):3ohm; Rds(on) Test Voltage, Vgs:10V; Package/Case:TO-220AB; Drain Source On Resistance @ 10V:3000mohm RoHS Compliant: No
Trans MOSFET N-CH 800V 4.1A 3-Pin(3 Tab) TO-220AB
MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:800V; Continuous Drain Current, Id:4.1A; On-Resistance, Rds(on):3ohm; Rds(on) Test Voltage, Vgs:10V; Package/Case:TO-220AB; Drain Source On Resistance @ 10V:3000mohm RoHS Compliant: No
The three parts on the right have similar specifications to IRFBE30.
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ImagePart NumberManufacturerMountMounting TypePackage / CaseNumber of PinsSupplier Device PackageWeightOperating TemperaturePackagingPublishedPart StatusMoisture Sensitivity Level (MSL)Max Operating TemperatureMin Operating TemperatureVoltage - Rated DCTechnologyCurrent RatingNumber of ElementsNumber of ChannelsPower Dissipation-MaxElement ConfigurationPower DissipationTurn On Delay TimeFET TypeRds On (Max) @ Id, VgsVgs(th) (Max) @ IdInput Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25°CGate Charge (Qg) (Max) @ VgsRise TimeDrain to Source Voltage (Vdss)Drive Voltage (Max Rds On,Min Rds On)Vgs (Max)Fall Time (Typ)Turn-Off Delay TimeContinuous Drain Current (ID)Gate to Source Voltage (Vgs)Drain to Source Breakdown VoltageInput CapacitanceDrain to Source ResistanceRds On MaxHeightLengthWidthRoHS StatusLead FreeSurface MountTransistor Element MaterialSeriesNumber of TerminationsECCN CodeTerminal PositionPeak Reflow Temperature (Cel)Time@Peak Reflow Temperature-Max (s)JESD-30 CodeQualification StatusConfigurationOperating ModeCase ConnectionTransistor ApplicationDrain Current-Max (Abs) (ID)Drain-source On Resistance-MaxPulsed Drain Current-Max (IDM)DS Breakdown Voltage-MinFactory Lead TimeREACH SVHCView Compare
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IRFBE30Through HoleThrough HoleTO-220-33TO-220AB6.000006g-55°C~150°C TJTube2014Obsolete1 (Unlimited)150°C-55°C800VMOSFET (Metal Oxide)4.1A11125W TcSingle125W12 nsN-Channel3Ohm @ 2.5A, 10V4V @ 250μA1300pF @ 25V4.1A Tc78nC @ 10V33ns800V10V±20V30 ns82 ns4.1A20V800V1.3nF3Ohm3 Ω9.01mm10.41mm4.7mmNon-RoHS CompliantContains Lead---------------------
-
-Through HoleTO-273AA----40°C~175°C TJTube2010Obsolete1 (Unlimited)---MOSFET (Metal Oxide)-1-300W Tc---N-Channel3.7m Ω @ 95A, 10V4V @ 250μA7360pF @ 25V206A Tc200nC @ 10V-40V10V±20V-----------Non-RoHS Compliant-NOSILICONHEXFET®3EAR99SINGLENOT SPECIFIEDNOT SPECIFIEDR-PSIP-T3Not QualifiedSINGLE WITH BUILT-IN DIODEENHANCEMENT MODEDRAINSWITCHING95A0.0037Ohm650A40V--
-
Through HoleThrough HoleTO-220-33TO-220AB6.000006g-55°C~150°C TJTube2004Obsolete1 (Unlimited)150°C-55°C500VMOSFET (Metal Oxide)17A-1280W TcSingle280W20 nsN-Channel350mOhm @ 10A, 10V5V @ 250μA2210pF @ 25V17A Tc89nC @ 10V77ns500V10V±30V30 ns38 ns17A30V500V2.21nF350mOhm350 mΩ9.01mm10.41mm4.7mmROHS3 CompliantLead Free--------------------
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Through HoleThrough HoleTO-220-33-6.000006g-55°C~175°C TJTube2001Active1 (Unlimited)---MOSFET (Metal Oxide)--1125W TcSingle-11 nsN-Channel8.4m Ω @ 46A, 10V3.7V @ 100μA4020pF @ 25V76A Tc109nC @ 10V48ns75V6V 10V±20V39 ns51 ns76A20V----16.51mm10.67mm4.83mmROHS3 CompliantLead Free--HEXFET®, StrongIRFET™-EAR99-NOT SPECIFIEDNOT SPECIFIED----------12 WeeksNo SVHC
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