Vishay Siliconix IRFBC40PBF

Name: IRFBC40PBF
Brand: Vishay Siliconix
SKU: 2848908-IRFBC40PBF
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: IRFBC40PBF

Manufacturer:: Vishay Siliconix

Ventron No:: 2848908-IRFBC40PBF

Description:: MOSFET N-CH 600V 6.2A TO-220AB

ECAD Model:

Datasheet:: IRFBC40PBF

Specifications

Vishay Siliconix IRFBC40PBF technical specifications, attributes, parameters and parts with similar specifications to Vishay Siliconix IRFBC40PBF.

Factory Lead Time
11 Weeks
Contact Plating
Tin
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-220-3
Number of Pins
3
Supplier Device Package
TO-220AB
Weight
6.000006g
Operating Temperature
-55°C~150°C TJ
Packaging
Tube
Published
2008
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Resistance
1.2Ohm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Voltage - Rated DC
600V
Technology
MOSFET (Metal Oxide)
Current Rating
6.2A
Number of Elements
1
Number of Channels
1
Voltage
600V
Power Dissipation-Max
125W Tc
Element Configuration
Single
Current
62A
Power Dissipation
125W
Turn On Delay Time
13 ns
FET Type
N-Channel
Rds On (Max) @ Id, Vgs
1.2Ohm @ 3.7A, 10V
Vgs(th) (Max) @ Id
4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds
1300pF @ 25V
Current - Continuous Drain (Id) @ 25°C
6.2A Tc
Gate Charge (Qg) (Max) @ Vgs
60nC @ 10V
Rise Time
18ns
Drain to Source Voltage (Vdss)
600V
Drive Voltage (Max Rds On,Min Rds On)
10V
Vgs (Max)
±20V
Fall Time (Typ)
20 ns
Turn-Off Delay Time
55 ns
Continuous Drain Current (ID)
6.2A
Threshold Voltage
4V
Gate to Source Voltage (Vgs)
20V
Drain to Source Breakdown Voltage
600V
Input Capacitance
1.3nF
Recovery Time
940 ns
Drain to Source Resistance
1.2Ohm
Rds On Max
1.2 Ω
Nominal Vgs
4 V
Height
9.01mm
Length
10.41mm
Width
4.7mm
REACH SVHC
Unknown
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free

Description

IRFBC40PBF Overview
CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 1300pF @ 25V.In this device, the drain current (ID) is equal to the continuous current transistor can conduct.This device has 600V drain-to-source breakdown voltage, where VDS corresponds to the ID at which a specified value of ID flows and VGS equals 600V.As a result of its turn-off delay time, which is 55 ns, the device has taken time to charge its input capacitance before drain current conduction begins.In a MOSFET, Drain to Source Resistance is the resistance between the drain and the source when gate-to-source voltage (VGS) is applied to bias it into the on state; in this device, this resistance is 1.2Ohm.Input capacitance charge delays drain current conduction until the time it takes to charge input capacitance reaches 13 ns.Gate-source voltages (VGS) are voltages that fall across the gate-source terminal of FET transistors. VGS is sometimes 20VV.The threshold voltage is the point at which an electrical device activates any one of its operations, which for this transistor is 4V.The transistor must receive a 600V drain to source voltage (Vdss) in order to function.In addition to reducing power consumption, this device uses drive voltage (10V).

IRFBC40PBF Features
a continuous drain current (ID) of 6.2A
a drain-to-source breakdown voltage of 600V voltage
the turn-off delay time is 55 ns
single MOSFETs transistor is 1.2Ohm
a threshold voltage of 4V
a 600V drain to source voltage (Vdss)

IRFBC40PBF Applications
There are a lot of Vishay Siliconix
IRFBC40PBF applications of single MOSFETs transistors.

DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
Lighting, Server, Telecom and UPS.

IRFBC40PBF More Descriptions

Single N-Channel 600 V 1.2 Ohms Flange Mount Power Mosfet - TO-220-3
IRFBC40PBF N-channel MOSFET Transistor, 6.2 A, 600 V, 3-Pin TO-220AB | Siliconix / Vishay IRFBC40PBF
Trans MOSFET N-CH 600V 6.2A 3-Pin (3 Tab) TO-220AB
Power Field-Effect Transistor, 6.2A I(D), 600V, 1.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
MOSFET, N, 600V, 6.2A, TO-220; Transistor Polarity: N Channel; Continuous Drain Current Id: 6.2A; Drain Source Voltage Vds: 600V; On Resistance Rds(on): 1.2ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 4V; Power Dissipation Pd: 125W; Transistor Case Style: TO-220AB; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: -; Current Id Max: 6.2A; Current Temperature: 25°C; Full Power Rating Temperature: 25°C; Junction to Case Thermal Resistance A: 1°C/W; Operating Temperature Min: -55°C; Operating Temperature Range: -55°C to 150°C; Pulse Current Idm: 25A; Termination Type: Through Hole; Voltage Vds: 600V; Voltage Vds Typ: 600V; Voltage Vgs Max: 20V; Voltage Vgs Rds on Measurement: 10V

Product Comparison

The three parts on the right have similar specifications to IRFBC40PBF.

Image

Part Number

Manufacturer

Factory Lead Time

Contact Plating

Mount

Mounting Type

Package / Case

Number of Pins

Supplier Device Package

Weight

Operating Temperature

Packaging

Published

Part Status

Moisture Sensitivity Level (MSL)

Resistance

Max Operating Temperature

Min Operating Temperature

Voltage - Rated DC

Technology

Current Rating

Number of Elements

Number of Channels

Voltage

Power Dissipation-Max

Element Configuration

Current

Power Dissipation

Turn On Delay Time

FET Type

Rds On (Max) @ Id, Vgs

Vgs(th) (Max) @ Id

Input Capacitance (Ciss) (Max) @ Vds

Current - Continuous Drain (Id) @ 25°C

Gate Charge (Qg) (Max) @ Vgs

Rise Time

Drain to Source Voltage (Vdss)

Drive Voltage (Max Rds On,Min Rds On)

Vgs (Max)

Fall Time (Typ)

Turn-Off Delay Time

Continuous Drain Current (ID)

Threshold Voltage

Gate to Source Voltage (Vgs)

Drain to Source Breakdown Voltage

Input Capacitance

Recovery Time

Drain to Source Resistance

Rds On Max

Nominal Vgs

Height

Length

Width

REACH SVHC

RoHS Status

Lead Free

Series

Termination

Dual Supply Voltage

Radiation Hardening

Surface Mount

Transistor Element Material

Number of Terminations

ECCN Code

Terminal Position

Peak Reflow Temperature (Cel)

Time@Peak Reflow Temperature-Max (s)

JESD-30 Code

Qualification Status

Configuration

Operating Mode

Case Connection

Transistor Application

Drain Current-Max (Abs) (ID)

Drain-source On Resistance-Max

Pulsed Drain Current-Max (IDM)

DS Breakdown Voltage-Min

Subcategory

JEDEC-95 Code

Avalanche Energy Rating (Eas)

View Compare
IRFBC40PBF

Vishay Siliconix

11 Weeks

Tin

Through Hole

Through Hole

TO-220-3

3

TO-220AB

6.000006g

-55°C~150°C TJ

Tube

2008

Active

1 (Unlimited)

1.2Ohm

150°C

-55°C

600V

MOSFET (Metal Oxide)

6.2A

1

1

600V

125W Tc

Single

62A

125W

13 ns

N-Channel

1.2Ohm @ 3.7A, 10V

4V @ 250μA

1300pF @ 25V

6.2A Tc

60nC @ 10V

18ns

600V

10V

±20V

20 ns

55 ns

6.2A

4V

20V

600V

1.3nF

940 ns

1.2Ohm

1.2 Ω

4 V

9.01mm

10.41mm

4.7mm

Unknown

ROHS3 Compliant

Lead Free

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-
IRFB4233PBF

Infineon Technologies

-

-

Through Hole

Through Hole

TO-220-3

3

TO-220AB

-

-40°C~175°C TJ

Tube

2007

Obsolete

1 (Unlimited)

-

175°C

-40°C

-

MOSFET (Metal Oxide)

-

1

-

-

370W Tc

Single

-

370W

31 ns

N-Channel

37mOhm @ 28A, 10V

5V @ 250μA

5510pF @ 25V

56A Tc

170nC @ 10V

-

230V

10V

±30V

-

51 ns

56A

5V

30V

230V

5.51nF

-

37mOhm

37 mΩ

5 V

16.51mm

10.6426mm

4.82mm

No SVHC

RoHS Compliant

-

HEXFET®

Through Hole

276V

No

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

IRFBC40PBF vs IRFB4233PBF
IRFBA1404P

Infineon Technologies

-

-

-

Through Hole

TO-273AA

-

-

-

-40°C~175°C TJ

Tube

2010

Obsolete

1 (Unlimited)

-

-

-

-

MOSFET (Metal Oxide)

-

1

-

-

300W Tc

-

-

-

-

N-Channel

3.7m Ω @ 95A, 10V

4V @ 250μA

7360pF @ 25V

206A Tc

200nC @ 10V

-

40V

10V

±20V

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

Non-RoHS Compliant

-

HEXFET®

-

-

-

NO

SILICON

3

EAR99

SINGLE

NOT SPECIFIED

NOT SPECIFIED

R-PSIP-T3

Not Qualified

SINGLE WITH BUILT-IN DIODE

ENHANCEMENT MODE

DRAIN

SWITCHING

95A

0.0037Ohm

650A

40V

-

-

-

IRFBC40PBF vs IRFBA1404P
IRFB23N20DPBF

Infineon Technologies

14 Weeks

Tin

Through Hole

Through Hole

TO-220-3

3

-

-

-55°C~175°C TJ

Tube

2000

Not For New Designs

1 (Unlimited)

100MOhm

-

-

200V

MOSFET (Metal Oxide)

24A

1

-

-

3.8W Ta 170W Tc

Single

-

170W

14 ns

N-Channel

100m Ω @ 14A, 10V

5.5V @ 250μA

1960pF @ 25V

24A Tc

86nC @ 10V

32ns

-

10V

±30V

16 ns

26 ns

24A

5.5V

30V

200V

-

-

-

-

5.5 V

4.69mm

10.54mm

4.699mm

No SVHC

ROHS3 Compliant

Contains Lead, Lead Free

HEXFET®

Through Hole

200V

No

-

SILICON

3

EAR99

-

-

-

-

-

-

ENHANCEMENT MODE

DRAIN

SWITCHING

-

-

96A

-

FET General Purpose Power

TO-220AB

250 mJ

IRFBC40PBF vs IRFB23N20DPBF

Certification

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IRFBC40PBF Specification

Part Number	Manufacturers	Description	Stock	Price
IRFBC40PBF DISTI #	Vishay Intertechnologies	Trans MOSFET N-CH 600V 6.2A 3-Pin(3 Tab) TO-220AB RoHS: Compliant	2813	1000 $0.811 5000 $0.7392 10000 $0.7136
IRFBC40PBF DISTI #	Vishay Intertechnologies	Trans MOSFET N-CH 600V 6.2A 3-Pin(3 Tab) TO-220AB RoHS: Compliant	1000	1000 $0.811 5000 $0.7392 10000 $0.7136
IRFBC40PBF DISTI #	Vishay Siliconix	MOSFET N-CH 600V 6.2A TO-220AB RoHS: Compliant	356	1 $2.08 50 $1.6806 100 $1.5125 500 $1.17636 1000 $0.9747
IRFBC40PBF DISTI #	Vishay Intertechnologies	Trans MOSFET N-CH 600V 6.2A 3-Pin(3 Tab) TO-220AB RoHS: Compliant	2250	50 $0.8898 100 $0.766 500 $0.7065 1000 $0.7045
IRFBC40PBF DISTI #	Vishay Intertechnologies	Trans MOSFET N-CH 600V 6.2A 3-Pin(3 Tab) TO-220AB RoHS: Compliant	2000	1000 $0.811
IRFBC40PBF DISTI #	Vishay Intertechnologies	Trans MOSFET N-CH 600V 6.2A 3-Pin(3 Tab) TO-220AB RoHS: Compliant	1000	8 $0.811
IRFBC40PBF DISTI #	Vishay Intertechnologies	Trans MOSFET N-CH 600V 6.2A 3-Pin(3 Tab) TO-220AB RoHS: Compliant	2950	1 $1.0619 10 $0.7619 25 $0.6179 50 $0.5459 100 $0.5379 500 $0.5289 1000 $0.5219
IRFBC40PBF DISTI #	Vishay Intertechnologies	Trans MOSFET N-CH 600V 6.2A 3-Pin(3 Tab) TO-220AB RoHS: Not Compliant	1107	1 $0.9939 10 $0.9319 25 $0.9289 50 $0.9269 100 $0.7979 500 $0.7159 1000 $0.6989
IRFBC40PBF DISTI #	Vishay Intertechnologies	Trans MOSFET N-CH 600V 6.2A 3-Pin(3 Tab) TO-220AB RoHS: Compliant	0	1000 $0.74612 2000 $0.57394 3000 $0.45681 5000 $0.38592 10000 $0.3553 25000 $0.34436 50000 $0.33408
IRFBC40PBF DISTI #	Vishay Intertechnologies	N CHANNEL MOSFET, 600V, 6.2A TO-220, Transistor P	986	1 $1.82 10 $1.52 25 $1.41 50 $1.29 100 $1.18 500 $1.03 1000 $0.916 2500 $0.889
IRFBC40PBF. DISTI #	Vishay Intertechnologies	MOSFET N-CHANNEL 600V ROHS COMPLIANT: NO	0	1 $1.86 10 $1.55 25 $1.44 50 $1.29 100 $1.18 500 $1.03 1000 $0.916 2500 $0.889
IRFBC40PBF DISTI #	Vishay Intertechnologies	MOSFET, Power, N-Ch, VDSS 600V, RDS(ON) 1.2 Oh RoHS: Compliant	0	1000 $1.106
IRFBC40PBF DISTI #	Vishay Siliconix	MOSFET N-CH 600V 6.2A TO-220AB RoHS: Compliant	0	1000 $2.614 2000 $2.094
IRFBC40PBF DISTI #	Vishay Intertechnologies	MOSFET N-Chan 600V 6.2 Amp RoHS: Compliant	2943	1 $1.82 10 $1.52 100 $1.18 500 $1.03 1000 $0.85 2500 $0.791 5000 $0.762 10000 $0.732
IRFBC40PBF DISTI #	Vishay Intertechnologies	Single N-Channel 600 V 1.2 Ohms Flange Mount Power RoHS: Compliant	3390	15 $0.995 400 $0.94
IRFBC40PBF DISTI #	Vishay Intertechnologies	MOSFET N-CHANNEL 600V 6.2A TO220AB, TA	347	10 $0.89
IRFBC40PBF DISTI #	Vishay Intertechnologies	MOSFET N-CHANNEL 600V 6.2A TO220AB, EA	147	1 $2 10 $0.89
IRFBC40PBF DISTI #	Vishay Intertechnologies	N-Ch 600V 6,2A 125W 1,2R TO220AB RoHS: Compliant	1700	25 $0.6195 100 $0.5395 300 $0.4995 500 $0.481
IRFBC40PBF DISTI #	Integrated Silicon Solution Inc	RoHS: Compliant	50
IRFBC40PBF DISTI #	International Rectifier	INSTOCK	233
IRFBC40PBF DISTI #	Vishay Intertechnologies	Trans MOSFET N-CH 600V 6.2A 3-Pin(3 Tab) TO-220AB RoHS: Compliant	2813	1000 $0.811
IRFBC40PBF DISTI #	Vishay Intertechnologies	Trans MOSFET N-CH 600V 6.2A 3-Pin(3 Tab) TO-220AB RoHS: Compliant	1250	5 $1.76 25 $1.28 50 $1.14 100 $0.964 500 $0.865 1000 $0.8
IRFBC40PBF DISTI #	VI1	RoHS: Compliant	50	800 $1.1
IRFBC40PBF DISTI #	Vishay Intertechnologies	TO-220AB RoHS: Compliant	2376	900 $0.8 2376 $0.7467
IRFBC40PBF DISTI #	Vishay Siliconix	RoHS: Compliant	3425	150 $1.99 3425 $1.81
IRFBC40PBF DISTI #	Vishay Intertechnologies	MOSFET N-Chan 600V 6.2 Amp RoHS: Compliant	10000	50 $1.05 100 $0.966 250 $0.887 500 $0.872 1000 $0.805
IRFBC40PBF. DISTI #	Vishay Intertechnologies	RoHS: Compliant	0	1 $2.88 10 $2.41 100 $1.87 500 $1.63 1000 $1.35 2500 $1.25 5000 $1.23

IRFBC40~~(20)~~
IRFBC4~~(21)~~
IRFBC~~(50)~~
IRFB~~(57)~~
IRF~~(69)~~

Vishay Siliconix IRFBC40PBF

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