Vishay Siliconix IRFBC40APBF

Name: IRFBC40APBF
Brand: Vishay Siliconix
SKU: 2483159-IRFBC40APBF
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: IRFBC40APBF

Manufacturer:: Vishay Siliconix

Ventron No:: 2483159-IRFBC40APBF

Description:: MOSFET N-CH 600V 6.2A TO-220AB

ECAD Model:

Datasheet:: IRFBC40A

Part Pictures

Specifications

Vishay Siliconix IRFBC40APBF technical specifications, attributes, parameters and parts with similar specifications to Vishay Siliconix IRFBC40APBF.

Factory Lead Time
8 Weeks
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-220-3
Number of Pins
3
Supplier Device Package
TO-220AB
Weight
6.000006g
Operating Temperature
-55°C~150°C TJ
Packaging
Tube
Published
2004
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Resistance
1.2Ohm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Voltage - Rated DC
600V
Technology
MOSFET (Metal Oxide)
Current Rating
6.2A
Number of Elements
1
Number of Channels
1
Voltage
600V
Power Dissipation-Max
125W Tc
Element Configuration
Single
Current
62A
Power Dissipation
125W
Turn On Delay Time
13 ns
FET Type
N-Channel
Rds On (Max) @ Id, Vgs
1.2Ohm @ 3.7A, 10V
Vgs(th) (Max) @ Id
4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds
1036pF @ 25V
Current - Continuous Drain (Id) @ 25°C
6.2A Tc
Gate Charge (Qg) (Max) @ Vgs
42nC @ 10V
Rise Time
23ns
Drain to Source Voltage (Vdss)
600V
Drive Voltage (Max Rds On,Min Rds On)
10V
Vgs (Max)
±30V
Fall Time (Typ)
18 ns
Turn-Off Delay Time
31 ns
Continuous Drain Current (ID)
6.2A
Threshold Voltage
4V
Gate to Source Voltage (Vgs)
30V
Drain to Source Breakdown Voltage
600V
Input Capacitance
1.036nF
Drain to Source Resistance
1.2Ohm
Rds On Max
1.2 Ω
Nominal Vgs
4 V
Height
9.01mm
Length
10.41mm
Width
4.7mm
REACH SVHC
Unknown
Radiation Hardening
No
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free

Description

IRFBC40APBF Overview
As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 1036pF @ 25V.This device conducts a continuous drain current (ID) of 6.2A, which is the maximum continuous current transistor can conduct.Using VGS=600V and a specified value of ID, the drain-source breakdown voltage is VDS at which a specified value of ID flows. This device has a drain-source breakdown voltage of 600V (that is, no charge flow from drain to source).When the device is turned off, a turn-off delay time of 31 ns occurs as the input capacitance charges before drain current conduction commences.When a specific gate-to-source voltage (VGS) is applied to bias a MOSFET to the on state, the drain to source resistance is 1.2Ohm, which means the device is not biased.Before drain current conduction can begin, the device's turning-on delay time takes time to charge its input capacitance. This delay time is 13 ns.Voltage at the gate-source terminal of a FET transistor, called the gate-source voltage, or VGS, can be 30V.Activation of any electrical operation happens at threshold voltage, and this transistor has 4V threshold voltage.This transistor requires a drain-source voltage (Vdss) of 600V.In order to reduce power consumption, this device uses a drive voltage of 10V volts (10V).

IRFBC40APBF Features
a continuous drain current (ID) of 6.2A
a drain-to-source breakdown voltage of 600V voltage
the turn-off delay time is 31 ns
single MOSFETs transistor is 1.2Ohm
a threshold voltage of 4V
a 600V drain to source voltage (Vdss)

IRFBC40APBF Applications
There are a lot of Vishay Siliconix
IRFBC40APBF applications of single MOSFETs transistors.

Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching

IRFBC40APBF More Descriptions

Single N-Channel 600 V 1.2 Ohms Flange Mount Power Mosfet - TO-220AB
IRFBC40APBF N-channel MOSFET Transistor, 6.2 A, 600 V, 3-Pin TO-220AB | Siliconix / Vishay IRFBC40APBF
Trans MOSFET N-CH 600V 6.2A 3-Pin (3 Tab) TO-220AB
Power Field-Effect Transistor, 6.2A I(D), 600V, 1.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
MOSFET, N, 600V, 6.1A, TO-220; Transistor Polarity:N Channel; Continuous Drain Current Id:6.2A; Drain Source Voltage Vds:600V; On Resistance Rds(on):1.2ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V; Operating Temperature Range:-55°C to 150°C; Transistor Case Style:TO-220AB; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:6.2A; Current Temperature:25°C; Full Power Rating Temperature:25°C; Junction to Case Thermal Resistance A:1.3°C/W; No. of Transistors:1; Package / Case:TO-220AB; Power Dissipation Pd:125W; Power Dissipation Pd:125W; Pulse Current Idm:25A; Termination Type:Through Hole; Voltage Vds Typ:600V; Voltage Vgs Max:30V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:4V

Product Comparison

The three parts on the right have similar specifications to IRFBC40APBF.

Image

Part Number

Manufacturer

Factory Lead Time

Mount

Mounting Type

Package / Case

Number of Pins

Supplier Device Package

Weight

Operating Temperature

Packaging

Published

Part Status

Moisture Sensitivity Level (MSL)

Resistance

Max Operating Temperature

Min Operating Temperature

Voltage - Rated DC

Technology

Current Rating

Number of Elements

Number of Channels

Voltage

Power Dissipation-Max

Element Configuration

Current

Power Dissipation

Turn On Delay Time

FET Type

Rds On (Max) @ Id, Vgs

Vgs(th) (Max) @ Id

Input Capacitance (Ciss) (Max) @ Vds

Current - Continuous Drain (Id) @ 25°C

Gate Charge (Qg) (Max) @ Vgs

Rise Time

Drain to Source Voltage (Vdss)

Drive Voltage (Max Rds On,Min Rds On)

Vgs (Max)

Fall Time (Typ)

Turn-Off Delay Time

Continuous Drain Current (ID)

Threshold Voltage

Gate to Source Voltage (Vgs)

Drain to Source Breakdown Voltage

Input Capacitance

Drain to Source Resistance

Rds On Max

Nominal Vgs

Height

Length

Width

REACH SVHC

Radiation Hardening

RoHS Status

Lead Free

Series

ECCN Code

Peak Reflow Temperature (Cel)

Time@Peak Reflow Temperature-Max (s)

Contact Plating

Transistor Element Material

Number of Terminations

Termination

Subcategory

Operating Mode

Case Connection

Transistor Application

JEDEC-95 Code

Pulsed Drain Current-Max (IDM)

Dual Supply Voltage

Avalanche Energy Rating (Eas)

View Compare
IRFBC40APBF

Vishay Siliconix

8 Weeks

Through Hole

Through Hole

TO-220-3

3

TO-220AB

6.000006g

-55°C~150°C TJ

Tube

2004

Active

1 (Unlimited)

1.2Ohm

150°C

-55°C

600V

MOSFET (Metal Oxide)

6.2A

1

1

600V

125W Tc

Single

62A

125W

13 ns

N-Channel

1.2Ohm @ 3.7A, 10V

4V @ 250μA

1036pF @ 25V

6.2A Tc

42nC @ 10V

23ns

600V

10V

±30V

18 ns

31 ns

6.2A

4V

30V

600V

1.036nF

1.2Ohm

1.2 Ω

4 V

9.01mm

10.41mm

4.7mm

Unknown

No

ROHS3 Compliant

Lead Free

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-
IRFB16N50KPBF

Vishay Siliconix

-

Through Hole

Through Hole

TO-220-3

3

TO-220AB

6.000006g

-55°C~150°C TJ

Tube

2004

Obsolete

1 (Unlimited)

-

150°C

-55°C

500V

MOSFET (Metal Oxide)

17A

-

1

-

280W Tc

Single

-

280W

20 ns

N-Channel

350mOhm @ 10A, 10V

5V @ 250μA

2210pF @ 25V

17A Tc

89nC @ 10V

77ns

500V

10V

±30V

30 ns

38 ns

17A

-

30V

500V

2.21nF

350mOhm

350 mΩ

-

9.01mm

10.41mm

4.7mm

-

-

ROHS3 Compliant

Lead Free

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

IRFBC40APBF vs IRFB16N50KPBF
IRFB7787PBF

Infineon Technologies

12 Weeks

Through Hole

Through Hole

TO-220-3

3

-

6.000006g

-55°C~175°C TJ

Tube

2001

Active

1 (Unlimited)

-

-

-

-

MOSFET (Metal Oxide)

-

-

1

-

125W Tc

Single

-

-

11 ns

N-Channel

8.4m Ω @ 46A, 10V

3.7V @ 100μA

4020pF @ 25V

76A Tc

109nC @ 10V

48ns

75V

6V 10V

±20V

39 ns

51 ns

76A

-

20V

-

-

-

-

-

16.51mm

10.67mm

4.83mm

No SVHC

-

ROHS3 Compliant

Lead Free

HEXFET®, StrongIRFET™

EAR99

NOT SPECIFIED

NOT SPECIFIED

-

-

-

-

-

-

-

-

-

-

-

-

IRFBC40APBF vs IRFB7787PBF
IRFB23N20DPBF

Infineon Technologies

14 Weeks

Through Hole

Through Hole

TO-220-3

3

-

-

-55°C~175°C TJ

Tube

2000

Not For New Designs

1 (Unlimited)

100MOhm

-

-

200V

MOSFET (Metal Oxide)

24A

1

-

-

3.8W Ta 170W Tc

Single

-

170W

14 ns

N-Channel

100m Ω @ 14A, 10V

5.5V @ 250μA

1960pF @ 25V

24A Tc

86nC @ 10V

32ns

-

10V

±30V

16 ns

26 ns

24A

5.5V

30V

200V

-

-

-

5.5 V

4.69mm

10.54mm

4.699mm

No SVHC

No

ROHS3 Compliant

Contains Lead, Lead Free

HEXFET®

EAR99

-

-

Tin

SILICON

3

Through Hole

FET General Purpose Power

ENHANCEMENT MODE

DRAIN

SWITCHING

TO-220AB

96A

200V

250 mJ

IRFBC40APBF vs IRFB23N20DPBF

Certification

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IRFBC40APBF Specification

Part Number	Manufacturers	Description	Stock	Price
IRFBC40APBF DISTI #V36:1790_09218685	Vishay Intertechnologies	Trans MOSFET N-CH 600V 6.2A 3-Pin(3 Tab) TO-220AB RoHS: Compliant	346	1 $2.1704 10 $1.6397 100 $1.2509 500 $1.117 1000 $0.9258 2500 $0.8622 5000 $0.8304 10000 $0.7986
IRFBC40APBF DISTI #V99:2348_09218685	Vishay Intertechnologies	Trans MOSFET N-CH 600V 6.2A 3-Pin(3 Tab) TO-220AB RoHS: Compliant	283	1 $2.1704 10 $1.6397 100 $1.2509 500 $1.117 1000 $1.0679
IRFBC40APBF DISTI #IRFBC40APBF-ND	Vishay Siliconix	MOSFET N-CH 600V 6.2A TO-220AB RoHS: Compliant	972	1 $2.06 10 $1.852 50 $1.7472 100 $1.4886 500 $1.22304 2500 $0.94349 5000 $0.90854
IRFBC40APBF DISTI #31222848	Vishay Intertechnologies	Trans MOSFET N-CH 600V 6.2A 3-Pin(3 Tab) TO-220AB RoHS: Compliant	923	15 $1.0692 300 $1.0098
IRFBC40APBF DISTI #31079136	Vishay Intertechnologies	Trans MOSFET N-CH 600V 6.2A 3-Pin(3 Tab) TO-220AB RoHS: Compliant	346	9 $2.1704 10 $1.6397 100 $1.2509 500 $1.117 1000 $0.9258 2500 $0.8622 5000 $0.8304 10000 $0.7986
IRFBC40APBF DISTI #25872682	Vishay Intertechnologies	Trans MOSFET N-CH 600V 6.2A 3-Pin(3 Tab) TO-220AB RoHS: Compliant	283	7 $2.1704 10 $1.6397 100 $1.2509 500 $1.117 1000 $1.0679
IRFBC40APBF DISTI #33734554	Vishay Intertechnologies	Trans MOSFET N-CH 600V 6.2A 3-Pin(3 Tab) TO-220AB RoHS: Compliant	161	37 $1.725
IRFBC40APBF DISTI #IRFBC40APBF	Vishay Intertechnologies	Trans MOSFET N-CH 600V 6.2A 3-Pin(3 Tab) TO-220AB RoHS: Compliant	0	1 $1.3749 10 $0.9859 25 $0.7999 50 $0.7069 100 $0.6969 500 $0.6849 1000 $0.6759
IRFBC40APBF DISTI #IRFBC40APBF	Vishay Intertechnologies	Trans MOSFET N-CH 600V 6.2A 3-Pin(3 Tab) TO-220AB RoHS: Not Compliant	0	1000 $0.79418 2000 $0.77062 4000 $0.7393 6000 $0.71884 10000 $0.69949
IRFBC40APBF DISTI #63J6687	Vishay Intertechnologies	Trans MOSFET N-CH 600V 6.2A 3-Pin(3 Tab) TO-220AB RoHS: Not Compliant	0	1 $1.99 10 $1.65 25 $1.53 50 $1.4 100 $1.28 500 $1.12 1000 $0.927
IRFBC40APBF DISTI #63J6687	Vishay Intertechnologies	N CHANNEL MOSFET, 600V, 6.2A TO-220, Transistor P	166	1 $1.38 10 $1.26 25 $1.17 50 $1.17 100 $1.17
IRFBC40APBF DISTI #70459436	Vishay Siliconix	IRFBC40APBF N-channel MOSFET Transistor, 6.2 A, RoHS: Compliant	8	1 $2.86 2 $2.81 5 $2.723 10 $2.61 25 $2.435
IRFBC40APBF DISTI #70078884	Vishay Intertechnologies	MOSFET, Power, N-Ch, VDSS 600V, RDS(ON) 1.2 Oh RoHS: Compliant	0	1000 $1.234
IRFBC40APBF DISTI #	Vishay Intertechnologies	Single N-Channel 600 V 1.2 Ohms Flange Mount Power RoHS: Compliant	600	25 $1.56 100 $1.21 250 $1.15 500 $1.11 1000 $1.06
IRFBC40APBF DISTI #844-IRFBC40APBF	Vishay Intertechnologies	MOSFET N-CH 600V HEXFET MOSFET RoHS: Compliant	1873	1 $1.99 10 $1.65 100 $1.28
IRFBC40A DISTI #844-IRFBC40A	Vishay Intertechnologies	MOSFET RECOMMENDED ALT 844-IRFBC40APBF RoHS: Not Compliant	0
IRFBC40APBF DISTI #	Vishay Siliconix	6.2A, 600V, 1.2OHM, N-CHANNEL, SI, POWER, MOSFET,	104	1 $2.25 14 $1.5 51 $1.125
IRFBC40APBF DISTI #1808315	Vishay Intertechnologies	N CHANNEL , VBRDSS 600 V, RDSON 1200 MO, TU	975	50 $1.25 100 $0.97 500 $0.847 1000 $0.701 2000 $0.653
IRFBC40APBF DISTI #	Vishay Intertechnologies		500
IRFBC40APBF DISTI #XSFP00000007113	Vishay Siliconix	RoHS: Compliant	500	100 $1.73 500 $1.61
IRFBC40APBF DISTI #8648824	Vishay Intertechnologies	MOSFET, N, 600V, 6.1A, TO-220	315	1 $1.75 10 $1.3 100 $0.989 250 $0.938 500 $0.887
IRFBC40APBF DISTI #	Vishay Intertechnologies	MOSFET N-CH 600V HEXFET MOSFET RoHS: Compliant	550	50 $0.97 100 $0.965 250 $0.956 500 $0.948 1000 $0.9
IRFBC40APBF DISTI #8648824	Vishay Intertechnologies	MOSFET, N, 600V, 6.1A, TO-220 RoHS: Compliant	364	1 $3.06 10 $2.54 100 $1.97

IRFBC40~~(20)~~
IRFBC4~~(21)~~
IRFBC~~(50)~~
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Vishay Siliconix IRFBC40APBF

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