Vishay Siliconix IRFBC40
- Part Number:
- IRFBC40
- Manufacturer:
- Vishay Siliconix
- Ventron No:
- 2853259-IRFBC40
- Description:
- MOSFET N-CH 600V 6.2A TO-220AB
- Datasheet:
- IRFBC40
Vishay Siliconix IRFBC40 technical specifications, attributes, parameters and parts with similar specifications to Vishay Siliconix IRFBC40.
- MountThrough Hole
- Mounting TypeThrough Hole
- Package / CaseTO-220-3
- Number of Pins3
- Supplier Device PackageTO-220AB
- Weight6.000006g
- Operating Temperature-55°C~150°C TJ
- PackagingTube
- Published2016
- Part StatusObsolete
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Max Operating Temperature150°C
- Min Operating Temperature-55°C
- TechnologyMOSFET (Metal Oxide)
- Number of Elements1
- Number of Channels1
- Power Dissipation-Max125W Tc
- Element ConfigurationSingle
- Power Dissipation125W
- Turn On Delay Time13 ns
- FET TypeN-Channel
- Rds On (Max) @ Id, Vgs1.2Ohm @ 3.7A, 10V
- Vgs(th) (Max) @ Id4V @ 250μA
- Input Capacitance (Ciss) (Max) @ Vds1300pF @ 25V
- Current - Continuous Drain (Id) @ 25°C6.2A Tc
- Gate Charge (Qg) (Max) @ Vgs60nC @ 10V
- Rise Time18ns
- Drain to Source Voltage (Vdss)600V
- Drive Voltage (Max Rds On,Min Rds On)10V
- Vgs (Max)±20V
- Fall Time (Typ)20 ns
- Turn-Off Delay Time55 ns
- Continuous Drain Current (ID)6.2A
- Gate to Source Voltage (Vgs)20V
- Drain to Source Breakdown Voltage600V
- Input Capacitance1.3nF
- Drain to Source Resistance1.2Ohm
- Rds On Max1.2 Ω
- Height9.01mm
- Length10.41mm
- Width4.7mm
- Radiation HardeningNo
- RoHS StatusNon-RoHS Compliant
IRFBC40 Overview
CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 1300pF @ 25V.In this device, the drain current (ID) is equal to the continuous current transistor can conduct.This device has 600V drain-to-source breakdown voltage, where VDS corresponds to the ID at which a specified value of ID flows and VGS equals 600V.As a result of its turn-off delay time, which is 55 ns, the device has taken time to charge its input capacitance before drain current conduction begins.In a MOSFET, Drain to Source Resistance is the resistance between the drain and the source when gate-to-source voltage (VGS) is applied to bias it into the on state; in this device, this resistance is 1.2Ohm.Input capacitance charge delays drain current conduction until the time it takes to charge input capacitance reaches 13 ns.Gate-source voltages (VGS) are voltages that fall across the gate-source terminal of FET transistors. VGS is sometimes 20VV.The transistor must receive a 600V drain to source voltage (Vdss) in order to function.In addition to reducing power consumption, this device uses drive voltage (10V).
IRFBC40 Features
a continuous drain current (ID) of 6.2A
a drain-to-source breakdown voltage of 600V voltage
the turn-off delay time is 55 ns
single MOSFETs transistor is 1.2Ohm
a 600V drain to source voltage (Vdss)
IRFBC40 Applications
There are a lot of Vishay Siliconix
IRFBC40 applications of single MOSFETs transistors.
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
Lighting, Server, Telecom and UPS.
CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 1300pF @ 25V.In this device, the drain current (ID) is equal to the continuous current transistor can conduct.This device has 600V drain-to-source breakdown voltage, where VDS corresponds to the ID at which a specified value of ID flows and VGS equals 600V.As a result of its turn-off delay time, which is 55 ns, the device has taken time to charge its input capacitance before drain current conduction begins.In a MOSFET, Drain to Source Resistance is the resistance between the drain and the source when gate-to-source voltage (VGS) is applied to bias it into the on state; in this device, this resistance is 1.2Ohm.Input capacitance charge delays drain current conduction until the time it takes to charge input capacitance reaches 13 ns.Gate-source voltages (VGS) are voltages that fall across the gate-source terminal of FET transistors. VGS is sometimes 20VV.The transistor must receive a 600V drain to source voltage (Vdss) in order to function.In addition to reducing power consumption, this device uses drive voltage (10V).
IRFBC40 Features
a continuous drain current (ID) of 6.2A
a drain-to-source breakdown voltage of 600V voltage
the turn-off delay time is 55 ns
single MOSFETs transistor is 1.2Ohm
a 600V drain to source voltage (Vdss)
IRFBC40 Applications
There are a lot of Vishay Siliconix
IRFBC40 applications of single MOSFETs transistors.
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
Lighting, Server, Telecom and UPS.
The three parts on the right have similar specifications to IRFBC40.
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ImagePart NumberManufacturerMountMounting TypePackage / CaseNumber of PinsSupplier Device PackageWeightOperating TemperaturePackagingPublishedPart StatusMoisture Sensitivity Level (MSL)Max Operating TemperatureMin Operating TemperatureTechnologyNumber of ElementsNumber of ChannelsPower Dissipation-MaxElement ConfigurationPower DissipationTurn On Delay TimeFET TypeRds On (Max) @ Id, VgsVgs(th) (Max) @ IdInput Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25°CGate Charge (Qg) (Max) @ VgsRise TimeDrain to Source Voltage (Vdss)Drive Voltage (Max Rds On,Min Rds On)Vgs (Max)Fall Time (Typ)Turn-Off Delay TimeContinuous Drain Current (ID)Gate to Source Voltage (Vgs)Drain to Source Breakdown VoltageInput CapacitanceDrain to Source ResistanceRds On MaxHeightLengthWidthRadiation HardeningRoHS StatusVoltage - Rated DCCurrent RatingLead FreeFactory Lead TimeSeriesECCN CodePeak Reflow Temperature (Cel)Time@Peak Reflow Temperature-Max (s)REACH SVHCContact PlatingTransistor Element MaterialNumber of TerminationsTerminationResistanceSubcategoryOperating ModeCase ConnectionTransistor ApplicationThreshold VoltageJEDEC-95 CodePulsed Drain Current-Max (IDM)Dual Supply VoltageAvalanche Energy Rating (Eas)Nominal VgsView Compare
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IRFBC40Through HoleThrough HoleTO-220-33TO-220AB6.000006g-55°C~150°C TJTube2016Obsolete1 (Unlimited)150°C-55°CMOSFET (Metal Oxide)11125W TcSingle125W13 nsN-Channel1.2Ohm @ 3.7A, 10V4V @ 250μA1300pF @ 25V6.2A Tc60nC @ 10V18ns600V10V±20V20 ns55 ns6.2A20V600V1.3nF1.2Ohm1.2 Ω9.01mm10.41mm4.7mmNoNon-RoHS Compliant-------------------------
-
Through HoleThrough HoleTO-220-33TO-220AB6.000006g-55°C~150°C TJTube2004Obsolete1 (Unlimited)150°C-55°CMOSFET (Metal Oxide)-1280W TcSingle280W20 nsN-Channel350mOhm @ 10A, 10V5V @ 250μA2210pF @ 25V17A Tc89nC @ 10V77ns500V10V±30V30 ns38 ns17A30V500V2.21nF350mOhm350 mΩ9.01mm10.41mm4.7mm-ROHS3 Compliant500V17ALead Free---------------------
-
Through HoleThrough HoleTO-220-33-6.000006g-55°C~175°C TJTube2001Active1 (Unlimited)--MOSFET (Metal Oxide)-1125W TcSingle-11 nsN-Channel8.4m Ω @ 46A, 10V3.7V @ 100μA4020pF @ 25V76A Tc109nC @ 10V48ns75V6V 10V±20V39 ns51 ns76A20V----16.51mm10.67mm4.83mm-ROHS3 Compliant--Lead Free12 WeeksHEXFET®, StrongIRFET™EAR99NOT SPECIFIEDNOT SPECIFIEDNo SVHC---------------
-
Through HoleThrough HoleTO-220-33---55°C~175°C TJTube2000Not For New Designs1 (Unlimited)--MOSFET (Metal Oxide)1-3.8W Ta 170W TcSingle170W14 nsN-Channel100m Ω @ 14A, 10V5.5V @ 250μA1960pF @ 25V24A Tc86nC @ 10V32ns-10V±30V16 ns26 ns24A30V200V---4.69mm10.54mm4.699mmNoROHS3 Compliant200V24AContains Lead, Lead Free14 WeeksHEXFET®EAR99--No SVHCTinSILICON3Through Hole100MOhmFET General Purpose PowerENHANCEMENT MODEDRAINSWITCHING5.5VTO-220AB96A200V250 mJ5.5 V
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