Vishay Siliconix IRFBC30PBF
- Part Number:
- IRFBC30PBF
- Manufacturer:
- Vishay Siliconix
- Ventron No:
- 2482949-IRFBC30PBF
- Description:
- MOSFET N-CH 600V 3.6A TO-220AB
- Datasheet:
- IRFBC30PBF
Vishay Siliconix IRFBC30PBF technical specifications, attributes, parameters and parts with similar specifications to Vishay Siliconix IRFBC30PBF.
- Factory Lead Time11 Weeks
- MountThrough Hole
- Mounting TypeThrough Hole
- Package / CaseTO-220-3
- Number of Pins3
- Supplier Device PackageTO-220AB
- Weight6.000006g
- Operating Temperature-55°C~150°C TJ
- PackagingTube
- Published2007
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Resistance2.2Ohm
- Max Operating Temperature150°C
- Min Operating Temperature-55°C
- TechnologyMOSFET (Metal Oxide)
- Number of Elements1
- Number of Channels1
- Voltage600V
- Power Dissipation-Max74W Tc
- Element ConfigurationSingle
- Current44A
- Power Dissipation74W
- Turn On Delay Time11 ns
- FET TypeN-Channel
- Rds On (Max) @ Id, Vgs2.2Ohm @ 2.2A, 10V
- Vgs(th) (Max) @ Id4V @ 250μA
- Input Capacitance (Ciss) (Max) @ Vds660pF @ 25V
- Current - Continuous Drain (Id) @ 25°C3.6A Tc
- Gate Charge (Qg) (Max) @ Vgs31nC @ 10V
- Rise Time13ns
- Drain to Source Voltage (Vdss)600V
- Drive Voltage (Max Rds On,Min Rds On)10V
- Vgs (Max)±20V
- Fall Time (Typ)14 ns
- Turn-Off Delay Time35 ns
- Continuous Drain Current (ID)3.6A
- Threshold Voltage4V
- Gate to Source Voltage (Vgs)20V
- Drain to Source Breakdown Voltage600V
- Input Capacitance660pF
- Recovery Time810 ns
- Drain to Source Resistance2.2Ohm
- Rds On Max2.2 Ω
- Nominal Vgs4 V
- Height9.01mm
- Length10.41mm
- Width4.7mm
- REACH SVHCUnknown
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
IRFBC30PBF Overview
With either input grounded, the input capacitance parameter, CI, represents the capacitance between the input terminals of the op amp. This device has a maximum input capacitance of 660pF @ 25V.A device's drain current is its maximum continuous current, and this device has a continuous drain current (ID) of 3.6A.With a drain-source breakdown voltage of 600V and a drain-source current flow rate of 1, this device has a drain-source breakdown voltage of 600V.The turn-off delay time is the amount of time it takes to charge the input capacitance of the device before drain current conduction can begin, and it is 35 ns.When a specific gate-to-source voltage (VGS) is applied to bias a MOSFET into the on state, a drain-to-source resistance of 2.2Ohm exists between the drain and source.Input capacitance charging takes time before drain current conduction begins, so the turn-on delay time is 11 ns.Single MOSFETs transistor is the voltage that falls across the gate-source terminal of a FET transistor that is called the gate-source voltage, VGS.4V is the threshold voltage at which an electrical device activates any of its operations.Single MOSFETs transistor is necessary to have a drain to source voltage (Vdss) of 600V.Using drive voltage (10V) reduces this device's overall power consumption.
IRFBC30PBF Features
a continuous drain current (ID) of 3.6A
a drain-to-source breakdown voltage of 600V voltage
the turn-off delay time is 35 ns
single MOSFETs transistor is 2.2Ohm
a threshold voltage of 4V
a 600V drain to source voltage (Vdss)
IRFBC30PBF Applications
There are a lot of Vishay Siliconix
IRFBC30PBF applications of single MOSFETs transistors.
Lighting
Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
With either input grounded, the input capacitance parameter, CI, represents the capacitance between the input terminals of the op amp. This device has a maximum input capacitance of 660pF @ 25V.A device's drain current is its maximum continuous current, and this device has a continuous drain current (ID) of 3.6A.With a drain-source breakdown voltage of 600V and a drain-source current flow rate of 1, this device has a drain-source breakdown voltage of 600V.The turn-off delay time is the amount of time it takes to charge the input capacitance of the device before drain current conduction can begin, and it is 35 ns.When a specific gate-to-source voltage (VGS) is applied to bias a MOSFET into the on state, a drain-to-source resistance of 2.2Ohm exists between the drain and source.Input capacitance charging takes time before drain current conduction begins, so the turn-on delay time is 11 ns.Single MOSFETs transistor is the voltage that falls across the gate-source terminal of a FET transistor that is called the gate-source voltage, VGS.4V is the threshold voltage at which an electrical device activates any of its operations.Single MOSFETs transistor is necessary to have a drain to source voltage (Vdss) of 600V.Using drive voltage (10V) reduces this device's overall power consumption.
IRFBC30PBF Features
a continuous drain current (ID) of 3.6A
a drain-to-source breakdown voltage of 600V voltage
the turn-off delay time is 35 ns
single MOSFETs transistor is 2.2Ohm
a threshold voltage of 4V
a 600V drain to source voltage (Vdss)
IRFBC30PBF Applications
There are a lot of Vishay Siliconix
IRFBC30PBF applications of single MOSFETs transistors.
Lighting
Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
IRFBC30PBF More Descriptions
Single N-Channel 600 V 2.2 Ohms Flange Mount Power Mosfet - TO-220AB
IRFBC30PBF N-channel MOSFET Transistor, 3.6 A, 600 V, 3-Pin TO-220AB | Siliconix / Vishay IRFBC30PBF
MOSFET Operating temperature: -55...150 °C Housing type: TO-220 Polarity: N Power dissipation: 74 W
Trans MOSFET N-CH 600V 3.6A 3-Pin(3 Tab) TO-220AB
Power Field-Effect Transistor, 3.6A I(D), 600V, 2.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
MOSFET, N, TO-220; Transistor Polarity: N Channel; Continuous Drain Current Id: 3.6A; Drain Source Voltage Vds: 600V; On Resistance Rds(on): 2.2ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 4V; Power Dissipation P
IRFBC30PBF N-channel MOSFET Transistor, 3.6 A, 600 V, 3-Pin TO-220AB | Siliconix / Vishay IRFBC30PBF
MOSFET Operating temperature: -55...150 °C Housing type: TO-220 Polarity: N Power dissipation: 74 W
Trans MOSFET N-CH 600V 3.6A 3-Pin(3 Tab) TO-220AB
Power Field-Effect Transistor, 3.6A I(D), 600V, 2.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
MOSFET, N, TO-220; Transistor Polarity: N Channel; Continuous Drain Current Id: 3.6A; Drain Source Voltage Vds: 600V; On Resistance Rds(on): 2.2ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 4V; Power Dissipation P
The three parts on the right have similar specifications to IRFBC30PBF.
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ImagePart NumberManufacturerFactory Lead TimeMountMounting TypePackage / CaseNumber of PinsSupplier Device PackageWeightOperating TemperaturePackagingPublishedPart StatusMoisture Sensitivity Level (MSL)ResistanceMax Operating TemperatureMin Operating TemperatureTechnologyNumber of ElementsNumber of ChannelsVoltagePower Dissipation-MaxElement ConfigurationCurrentPower DissipationTurn On Delay TimeFET TypeRds On (Max) @ Id, VgsVgs(th) (Max) @ IdInput Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25°CGate Charge (Qg) (Max) @ VgsRise TimeDrain to Source Voltage (Vdss)Drive Voltage (Max Rds On,Min Rds On)Vgs (Max)Fall Time (Typ)Turn-Off Delay TimeContinuous Drain Current (ID)Threshold VoltageGate to Source Voltage (Vgs)Drain to Source Breakdown VoltageInput CapacitanceRecovery TimeDrain to Source ResistanceRds On MaxNominal VgsHeightLengthWidthREACH SVHCRadiation HardeningRoHS StatusLead FreeSurface MountTransistor Element MaterialSeriesNumber of TerminationsECCN CodeTerminal PositionPeak Reflow Temperature (Cel)Time@Peak Reflow Temperature-Max (s)JESD-30 CodeQualification StatusConfigurationOperating ModeCase ConnectionTransistor ApplicationDrain Current-Max (Abs) (ID)Drain-source On Resistance-MaxPulsed Drain Current-Max (IDM)DS Breakdown Voltage-MinContact PlatingTerminationDual Supply VoltageView Compare
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IRFBC30PBF11 WeeksThrough HoleThrough HoleTO-220-33TO-220AB6.000006g-55°C~150°C TJTube2007Active1 (Unlimited)2.2Ohm150°C-55°CMOSFET (Metal Oxide)11600V74W TcSingle44A74W11 nsN-Channel2.2Ohm @ 2.2A, 10V4V @ 250μA660pF @ 25V3.6A Tc31nC @ 10V13ns600V10V±20V14 ns35 ns3.6A4V20V600V660pF810 ns2.2Ohm2.2 Ω4 V9.01mm10.41mm4.7mmUnknownNoROHS3 CompliantLead Free----------------------
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--Through HoleTO-273AA----40°C~175°C TJTube2010Obsolete1 (Unlimited)---MOSFET (Metal Oxide)1--300W Tc----N-Channel3.7m Ω @ 95A, 10V4V @ 250μA7360pF @ 25V206A Tc200nC @ 10V-40V10V±20V----------------Non-RoHS Compliant-NOSILICONHEXFET®3EAR99SINGLENOT SPECIFIEDNOT SPECIFIEDR-PSIP-T3Not QualifiedSINGLE WITH BUILT-IN DIODEENHANCEMENT MODEDRAINSWITCHING95A0.0037Ohm650A40V---
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12 WeeksThrough HoleThrough HoleTO-220-33-6.000006g-55°C~175°C TJTube2001Active1 (Unlimited)---MOSFET (Metal Oxide)-1-125W TcSingle--11 nsN-Channel8.4m Ω @ 46A, 10V3.7V @ 100μA4020pF @ 25V76A Tc109nC @ 10V48ns75V6V 10V±20V39 ns51 ns76A-20V------16.51mm10.67mm4.83mmNo SVHC-ROHS3 CompliantLead Free--HEXFET®, StrongIRFET™-EAR99-NOT SPECIFIEDNOT SPECIFIED-------------
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12 WeeksThrough HoleThrough HoleTO-220-33TO-220AB--55°C~175°C TJTube2007Active1 (Unlimited)72.5MOhm175°C-55°CMOSFET (Metal Oxide)1--144W TcSingle-144W8.6 nsN-Channel72.5mOhm @ 15A, 10V5V @ 100μA1710pF @ 50V25A Tc38nC @ 10V14.6ns200V10V±20V9.9 ns17.1 ns25A5V20V200V1.71nF-72.5mOhm72.5 mΩ5 V9.02mm10.668mm4.826mmNo SVHCNoROHS3 CompliantLead Free------------------TinThrough Hole200V
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