IRFBC30PBF

Vishay Siliconix IRFBC30PBF

Part Number:
IRFBC30PBF
Manufacturer:
Vishay Siliconix
Ventron No:
2482949-IRFBC30PBF
Description:
MOSFET N-CH 600V 3.6A TO-220AB
ECAD Model:
Datasheet:
IRFBC30PBF

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Specifications
Vishay Siliconix IRFBC30PBF technical specifications, attributes, parameters and parts with similar specifications to Vishay Siliconix IRFBC30PBF.
  • Factory Lead Time
    11 Weeks
  • Mount
    Through Hole
  • Mounting Type
    Through Hole
  • Package / Case
    TO-220-3
  • Number of Pins
    3
  • Supplier Device Package
    TO-220AB
  • Weight
    6.000006g
  • Operating Temperature
    -55°C~150°C TJ
  • Packaging
    Tube
  • Published
    2007
  • Part Status
    Active
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Resistance
    2.2Ohm
  • Max Operating Temperature
    150°C
  • Min Operating Temperature
    -55°C
  • Technology
    MOSFET (Metal Oxide)
  • Number of Elements
    1
  • Number of Channels
    1
  • Voltage
    600V
  • Power Dissipation-Max
    74W Tc
  • Element Configuration
    Single
  • Current
    44A
  • Power Dissipation
    74W
  • Turn On Delay Time
    11 ns
  • FET Type
    N-Channel
  • Rds On (Max) @ Id, Vgs
    2.2Ohm @ 2.2A, 10V
  • Vgs(th) (Max) @ Id
    4V @ 250μA
  • Input Capacitance (Ciss) (Max) @ Vds
    660pF @ 25V
  • Current - Continuous Drain (Id) @ 25°C
    3.6A Tc
  • Gate Charge (Qg) (Max) @ Vgs
    31nC @ 10V
  • Rise Time
    13ns
  • Drain to Source Voltage (Vdss)
    600V
  • Drive Voltage (Max Rds On,Min Rds On)
    10V
  • Vgs (Max)
    ±20V
  • Fall Time (Typ)
    14 ns
  • Turn-Off Delay Time
    35 ns
  • Continuous Drain Current (ID)
    3.6A
  • Threshold Voltage
    4V
  • Gate to Source Voltage (Vgs)
    20V
  • Drain to Source Breakdown Voltage
    600V
  • Input Capacitance
    660pF
  • Recovery Time
    810 ns
  • Drain to Source Resistance
    2.2Ohm
  • Rds On Max
    2.2 Ω
  • Nominal Vgs
    4 V
  • Height
    9.01mm
  • Length
    10.41mm
  • Width
    4.7mm
  • REACH SVHC
    Unknown
  • Radiation Hardening
    No
  • RoHS Status
    ROHS3 Compliant
  • Lead Free
    Lead Free
Description
IRFBC30PBF Overview
With either input grounded, the input capacitance parameter, CI, represents the capacitance between the input terminals of the op amp. This device has a maximum input capacitance of 660pF @ 25V.A device's drain current is its maximum continuous current, and this device has a continuous drain current (ID) of 3.6A.With a drain-source breakdown voltage of 600V and a drain-source current flow rate of 1, this device has a drain-source breakdown voltage of 600V.The turn-off delay time is the amount of time it takes to charge the input capacitance of the device before drain current conduction can begin, and it is 35 ns.When a specific gate-to-source voltage (VGS) is applied to bias a MOSFET into the on state, a drain-to-source resistance of 2.2Ohm exists between the drain and source.Input capacitance charging takes time before drain current conduction begins, so the turn-on delay time is 11 ns.Single MOSFETs transistor is the voltage that falls across the gate-source terminal of a FET transistor that is called the gate-source voltage, VGS.4V is the threshold voltage at which an electrical device activates any of its operations.Single MOSFETs transistor is necessary to have a drain to source voltage (Vdss) of 600V.Using drive voltage (10V) reduces this device's overall power consumption.

IRFBC30PBF Features
a continuous drain current (ID) of 3.6A
a drain-to-source breakdown voltage of 600V voltage
the turn-off delay time is 35 ns
single MOSFETs transistor is 2.2Ohm
a threshold voltage of 4V
a 600V drain to source voltage (Vdss)


IRFBC30PBF Applications
There are a lot of Vishay Siliconix
IRFBC30PBF applications of single MOSFETs transistors.


Lighting
Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
IRFBC30PBF More Descriptions
Single N-Channel 600 V 2.2 Ohms Flange Mount Power Mosfet - TO-220AB
IRFBC30PBF N-channel MOSFET Transistor, 3.6 A, 600 V, 3-Pin TO-220AB | Siliconix / Vishay IRFBC30PBF
MOSFET Operating temperature: -55...150 °C Housing type: TO-220 Polarity: N Power dissipation: 74 W
Trans MOSFET N-CH 600V 3.6A 3-Pin(3 Tab) TO-220AB
Power Field-Effect Transistor, 3.6A I(D), 600V, 2.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
MOSFET, N, TO-220; Transistor Polarity: N Channel; Continuous Drain Current Id: 3.6A; Drain Source Voltage Vds: 600V; On Resistance Rds(on): 2.2ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 4V; Power Dissipation P
Product Comparison
The three parts on the right have similar specifications to IRFBC30PBF.
  • Image
    Part Number
    Manufacturer
    Factory Lead Time
    Mount
    Mounting Type
    Package / Case
    Number of Pins
    Supplier Device Package
    Weight
    Operating Temperature
    Packaging
    Published
    Part Status
    Moisture Sensitivity Level (MSL)
    Resistance
    Max Operating Temperature
    Min Operating Temperature
    Technology
    Number of Elements
    Number of Channels
    Voltage
    Power Dissipation-Max
    Element Configuration
    Current
    Power Dissipation
    Turn On Delay Time
    FET Type
    Rds On (Max) @ Id, Vgs
    Vgs(th) (Max) @ Id
    Input Capacitance (Ciss) (Max) @ Vds
    Current - Continuous Drain (Id) @ 25°C
    Gate Charge (Qg) (Max) @ Vgs
    Rise Time
    Drain to Source Voltage (Vdss)
    Drive Voltage (Max Rds On,Min Rds On)
    Vgs (Max)
    Fall Time (Typ)
    Turn-Off Delay Time
    Continuous Drain Current (ID)
    Threshold Voltage
    Gate to Source Voltage (Vgs)
    Drain to Source Breakdown Voltage
    Input Capacitance
    Recovery Time
    Drain to Source Resistance
    Rds On Max
    Nominal Vgs
    Height
    Length
    Width
    REACH SVHC
    Radiation Hardening
    RoHS Status
    Lead Free
    Surface Mount
    Transistor Element Material
    Series
    Number of Terminations
    ECCN Code
    Terminal Position
    Peak Reflow Temperature (Cel)
    Time@Peak Reflow Temperature-Max (s)
    JESD-30 Code
    Qualification Status
    Configuration
    Operating Mode
    Case Connection
    Transistor Application
    Drain Current-Max (Abs) (ID)
    Drain-source On Resistance-Max
    Pulsed Drain Current-Max (IDM)
    DS Breakdown Voltage-Min
    Contact Plating
    Termination
    Dual Supply Voltage
    View Compare
  • IRFBC30PBF
    IRFBC30PBF
    11 Weeks
    Through Hole
    Through Hole
    TO-220-3
    3
    TO-220AB
    6.000006g
    -55°C~150°C TJ
    Tube
    2007
    Active
    1 (Unlimited)
    2.2Ohm
    150°C
    -55°C
    MOSFET (Metal Oxide)
    1
    1
    600V
    74W Tc
    Single
    44A
    74W
    11 ns
    N-Channel
    2.2Ohm @ 2.2A, 10V
    4V @ 250μA
    660pF @ 25V
    3.6A Tc
    31nC @ 10V
    13ns
    600V
    10V
    ±20V
    14 ns
    35 ns
    3.6A
    4V
    20V
    600V
    660pF
    810 ns
    2.2Ohm
    2.2 Ω
    4 V
    9.01mm
    10.41mm
    4.7mm
    Unknown
    No
    ROHS3 Compliant
    Lead Free
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • IRFBA1404P
    -
    -
    Through Hole
    TO-273AA
    -
    -
    -
    -40°C~175°C TJ
    Tube
    2010
    Obsolete
    1 (Unlimited)
    -
    -
    -
    MOSFET (Metal Oxide)
    1
    -
    -
    300W Tc
    -
    -
    -
    -
    N-Channel
    3.7m Ω @ 95A, 10V
    4V @ 250μA
    7360pF @ 25V
    206A Tc
    200nC @ 10V
    -
    40V
    10V
    ±20V
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    Non-RoHS Compliant
    -
    NO
    SILICON
    HEXFET®
    3
    EAR99
    SINGLE
    NOT SPECIFIED
    NOT SPECIFIED
    R-PSIP-T3
    Not Qualified
    SINGLE WITH BUILT-IN DIODE
    ENHANCEMENT MODE
    DRAIN
    SWITCHING
    95A
    0.0037Ohm
    650A
    40V
    -
    -
    -
  • IRFB7787PBF
    12 Weeks
    Through Hole
    Through Hole
    TO-220-3
    3
    -
    6.000006g
    -55°C~175°C TJ
    Tube
    2001
    Active
    1 (Unlimited)
    -
    -
    -
    MOSFET (Metal Oxide)
    -
    1
    -
    125W Tc
    Single
    -
    -
    11 ns
    N-Channel
    8.4m Ω @ 46A, 10V
    3.7V @ 100μA
    4020pF @ 25V
    76A Tc
    109nC @ 10V
    48ns
    75V
    6V 10V
    ±20V
    39 ns
    51 ns
    76A
    -
    20V
    -
    -
    -
    -
    -
    -
    16.51mm
    10.67mm
    4.83mm
    No SVHC
    -
    ROHS3 Compliant
    Lead Free
    -
    -
    HEXFET®, StrongIRFET™
    -
    EAR99
    -
    NOT SPECIFIED
    NOT SPECIFIED
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • IRFB5620PBF
    12 Weeks
    Through Hole
    Through Hole
    TO-220-3
    3
    TO-220AB
    -
    -55°C~175°C TJ
    Tube
    2007
    Active
    1 (Unlimited)
    72.5MOhm
    175°C
    -55°C
    MOSFET (Metal Oxide)
    1
    -
    -
    144W Tc
    Single
    -
    144W
    8.6 ns
    N-Channel
    72.5mOhm @ 15A, 10V
    5V @ 100μA
    1710pF @ 50V
    25A Tc
    38nC @ 10V
    14.6ns
    200V
    10V
    ±20V
    9.9 ns
    17.1 ns
    25A
    5V
    20V
    200V
    1.71nF
    -
    72.5mOhm
    72.5 mΩ
    5 V
    9.02mm
    10.668mm
    4.826mm
    No SVHC
    No
    ROHS3 Compliant
    Lead Free
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    Tin
    Through Hole
    200V
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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