Vishay Siliconix IRFBC30APBF

Name: IRFBC30APBF
Brand: Vishay Siliconix
SKU: 2849474-IRFBC30APBF
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: IRFBC30APBF

Manufacturer:: Vishay Siliconix

Ventron No:: 2849474-IRFBC30APBF

Description:: MOSFET N-CH 600V 3.6A TO-220AB

ECAD Model:

Datasheet:: IRFBC30APBF

Specifications

Vishay Siliconix IRFBC30APBF technical specifications, attributes, parameters and parts with similar specifications to Vishay Siliconix IRFBC30APBF.

Factory Lead Time
8 Weeks
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-220-3
Number of Pins
3
Supplier Device Package
TO-220AB
Weight
6.000006g
Operating Temperature
-55°C~150°C TJ
Packaging
Tube
Published
2004
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Resistance
2.2Ohm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Technology
MOSFET (Metal Oxide)
Number of Elements
1
Number of Channels
1
Voltage
600V
Power Dissipation-Max
74W Tc
Element Configuration
Single
Current
44A
Power Dissipation
74W
Turn On Delay Time
9.8 ns
FET Type
N-Channel
Rds On (Max) @ Id, Vgs
2.2Ohm @ 2.2A, 10V
Vgs(th) (Max) @ Id
4.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds
510pF @ 25V
Current - Continuous Drain (Id) @ 25°C
3.6A Tc
Gate Charge (Qg) (Max) @ Vgs
23nC @ 10V
Rise Time
13ns
Drain to Source Voltage (Vdss)
600V
Drive Voltage (Max Rds On,Min Rds On)
10V
Vgs (Max)
±30V
Fall Time (Typ)
12 ns
Turn-Off Delay Time
19 ns
Continuous Drain Current (ID)
3.6A
Threshold Voltage
4.5V
Gate to Source Voltage (Vgs)
30V
Drain to Source Breakdown Voltage
600V
Input Capacitance
510pF
Drain to Source Resistance
2.2Ohm
Rds On Max
2.2 Ω
Nominal Vgs
4.5 V
Height
9.01mm
Length
10.41mm
Width
4.7mm
REACH SVHC
Unknown
Radiation Hardening
No
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free

Description

IRFBC30APBF Overview
An op amp's input capacitance is defined as the capacitance between both of its input terminals with either input grounded, and 510pF @ 25V is its maximum input capacitance.The drain current is the maximum continuous current the device can conduct, and this device has 3.6A continuous drain current (ID).A drainage-to-source breakdown voltage corresponds to the voltage at which a specified value of ID flows, where VGS is 600V, and this device has a drainage-to-source breakdown voltage of 600VV.Input capacitance must be charged before drain current conduction can begin, so the turn-off delay time is 19 ns.This device has a drain-to-source resistance of 2.2Ohm when a gate-to-source voltage (VGS) is applied to bias it into the on state, and when this voltage is applied to bias it into the on state.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 9.8 ns.An FET transistor's gate-source voltage, VGS, indicates how much voltage is applied across the transistor's gate-source terminal and it can range from 30V to 1.In this case, the threshold voltage of the transistor is 4.5V, which means that it will not activate any of its functions when its threshold voltage reaches 4.5V.For this transistor to work, a voltage 600V is required between drain and source (Vdss).Using drive voltage (10V), this device contributes to a reduction in overall power consumption.

IRFBC30APBF Features
a continuous drain current (ID) of 3.6A
a drain-to-source breakdown voltage of 600V voltage
the turn-off delay time is 19 ns
single MOSFETs transistor is 2.2Ohm
a threshold voltage of 4.5V
a 600V drain to source voltage (Vdss)

IRFBC30APBF Applications
There are a lot of Vishay Siliconix
IRFBC30APBF applications of single MOSFETs transistors.

AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies

IRFBC30APBF More Descriptions

IRFBC30A Series N-Channel 600 V 2.2 Ohm Flange Mount Power Mosfet - TO-220AB
Trans MOSFET N-CH 600V 3.6A 3-Pin(3 Tab) TO-220AB
1.2A High Power White LED Driver with I2C Compatible Interface 12-DSBGA -40 to 85
MOSFET, N, 600V, 3.6A, TO-220; Transistor Polarity: N Channel; Continuous Drain Current Id: 3.6A; Drain Source Voltage Vds: 600V; On Resistance Rds(on): 2.2ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 4.5V; Power

Product Comparison

The three parts on the right have similar specifications to IRFBC30APBF.

Image

Part Number

Manufacturer

Factory Lead Time

Mount

Mounting Type

Package / Case

Number of Pins

Supplier Device Package

Weight

Operating Temperature

Packaging

Published

Part Status

Moisture Sensitivity Level (MSL)

Resistance

Max Operating Temperature

Min Operating Temperature

Technology

Number of Elements

Number of Channels

Voltage

Power Dissipation-Max

Element Configuration

Current

Power Dissipation

Turn On Delay Time

FET Type

Rds On (Max) @ Id, Vgs

Vgs(th) (Max) @ Id

Input Capacitance (Ciss) (Max) @ Vds

Current - Continuous Drain (Id) @ 25°C

Gate Charge (Qg) (Max) @ Vgs

Rise Time

Drain to Source Voltage (Vdss)

Drive Voltage (Max Rds On,Min Rds On)

Vgs (Max)

Fall Time (Typ)

Turn-Off Delay Time

Continuous Drain Current (ID)

Threshold Voltage

Gate to Source Voltage (Vgs)

Drain to Source Breakdown Voltage

Input Capacitance

Drain to Source Resistance

Rds On Max

Nominal Vgs

Height

Length

Width

REACH SVHC

Radiation Hardening

RoHS Status

Lead Free

Series

Contact Plating

Termination

Dual Supply Voltage

Transistor Element Material

Number of Terminations

ECCN Code

Subcategory

Operating Mode

Case Connection

Transistor Application

JEDEC-95 Code

Pulsed Drain Current-Max (IDM)

Recovery Time

View Compare
IRFBC30APBF

Vishay Siliconix

8 Weeks

Through Hole

Through Hole

TO-220-3

3

TO-220AB

6.000006g

-55°C~150°C TJ

Tube

2004

Active

1 (Unlimited)

2.2Ohm

150°C

-55°C

MOSFET (Metal Oxide)

1

1

600V

74W Tc

Single

44A

74W

9.8 ns

N-Channel

2.2Ohm @ 2.2A, 10V

4.5V @ 250μA

510pF @ 25V

3.6A Tc

23nC @ 10V

13ns

600V

10V

±30V

12 ns

19 ns

3.6A

4.5V

30V

600V

510pF

2.2Ohm

2.2 Ω

4.5 V

9.01mm

10.41mm

4.7mm

Unknown

No

ROHS3 Compliant

Lead Free

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-
IRFB4510GPBF

Infineon Technologies

-

Through Hole

Through Hole

TO-220-3

3

TO-220AB

-

-55°C~175°C TJ

Tube

2012

Obsolete

1 (Unlimited)

-

175°C

-55°C

MOSFET (Metal Oxide)

1

-

-

140W Tc

-

-

140W

-

N-Channel

13.5mOhm @ 37A, 10V

4V @ 100μA

3180pF @ 50V

62A Tc

87nC @ 10V

-

100V

10V

±20V

-

-

62A

-

20V

-

3.18nF

-

13.5 mΩ

-

-

-

-

-

-

RoHS Compliant

-

HEXFET®

-

-

-

-

-

-

-

-

-

-

-

-

-

IRFBC30APBF vs IRFB4510GPBF
IRFB5620PBF

Infineon Technologies

12 Weeks

Through Hole

Through Hole

TO-220-3

3

TO-220AB

-

-55°C~175°C TJ

Tube

2007

Active

1 (Unlimited)

72.5MOhm

175°C

-55°C

MOSFET (Metal Oxide)

1

-

-

144W Tc

Single

-

144W

8.6 ns

N-Channel

72.5mOhm @ 15A, 10V

5V @ 100μA

1710pF @ 50V

25A Tc

38nC @ 10V

14.6ns

200V

10V

±20V

9.9 ns

17.1 ns

25A

5V

20V

200V

1.71nF

72.5mOhm

72.5 mΩ

5 V

9.02mm

10.668mm

4.826mm

No SVHC

No

ROHS3 Compliant

Lead Free

-

Tin

Through Hole

200V

-

-

-

-

-

-

-

-

-

-

IRFBC30APBF vs IRFB5620PBF
IRFB4310ZPBF

Infineon Technologies

12 Weeks

Through Hole

Through Hole

TO-220-3

3

-

-

-55°C~175°C TJ

Tube

2008

Active

1 (Unlimited)

6MOhm

-

-

MOSFET (Metal Oxide)

1

-

-

250W Tc

Single

-

250W

20 ns

N-Channel

6m Ω @ 75A, 10V

4V @ 150μA

6860pF @ 50V

120A Tc

170nC @ 10V

60ns

-

10V

±20V

57 ns

55 ns

140A

4V

20V

100V

-

-

-

4 V

9.017mm

10.668mm

4.826mm

No SVHC

No

ROHS3 Compliant

Lead Free

HEXFET®

-

Through Hole

100V

SILICON

3

EAR99

FET General Purpose Power

ENHANCEMENT MODE

DRAIN

SWITCHING

TO-220AB

560A

40 ns

IRFBC30APBF vs IRFB4310ZPBF

Certification

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IRFBC30APBF Specification

Part Number	Manufacturers	Description	Stock	Price
IRFBC30APBF DISTI #IRFBC30APBF	Vishay Intertechnologies	Trans MOSFET N-CH 600V 3.6A 3-Pin(3 Tab) TO-220AB RoHS: Compliant	410	1 $2.1284 10 $1.9869 100 $0.9177 500 $0.826 1000 $0.7433
IRFBC30APBF DISTI #IRFBC30APBF	Vishay Siliconix	MOSFET N-CH 600V 3.6A TO-220AB RoHS: Compliant	118	1 $3.38 10 $3.049 100 $2.4503
IRFBC30APBF DISTI #IRFBC30APBF	Vishay Intertechnologies	Trans MOSFET N-CH 600V 3.6A 3-Pin(3 Tab) TO-220AB RoHS: Compliant	2900	50 $0.4968 700 $0.4449 1400 $0.4259 2100 $0.4084
IRFBC30APBF DISTI #IRFBC30APBF	Vishay Intertechnologies	Trans MOSFET N-CH 600V 3.6A 3-Pin(3 Tab) TO-220AB RoHS: Compliant	410	11 $1.9869 100 $0.9177
IRFBC30APBF DISTI #IRFBC30APBF	Vishay Intertechnologies	Trans MOSFET N-CH 600V 3.6A 3-Pin(3 Tab) TO-220AB RoHS: Not Compliant	0	1000 $0.6429 2000 $0.6239 4000 $0.5989 6000 $0.5819 10000 $0.5659
IRFBC30APBF DISTI #IRFBC30APBF	Vishay Intertechnologies	Power MOSFET, N Channel, 3.6 A, 600 V, 2.2 ohm, 10	44	1 $3.53 10 $3.19 25 $2.98 50 $2.78 100 $2.57 500 $2 1000 $1.66
IRFBC30APBF DISTI #IRFBC30APBF	Vishay Dale	TRANSITOR, IRFBC30APBF RoHS: Compliant	0	5 $2.43 25 $2.02 100 $1.84 250 $1.68 500 $1.58
IRFBC30APBF DISTI #IRFBC30APBF	Vishay Intertechnologies	MOSFET N-Chan 600V 3.6 Amp RoHS: Compliant	152	1 $3.53 10 $3.19 100 $2.57 500 $2 1000 $1.66
IRFBC30A DISTI #IRFBC30A	Vishay Intertechnologies	MOSFET N-Chan 600V 3.6 Amp RoHS: Not Compliant	0
IRFBC30APBF DISTI #IRFBC30APBF	Vishay Intertechnologies	IRFBC30A Series N-Channel 600 V 2.2 Ohm Flange Mou RoHS: Compliant	675	10 $1.17 100 $1.06 500 $0.91
IRFBC30APBF DISTI #IRFBC30APBF	Vishay Intertechnologies	MOSFET N-CHANNEL 600V 3.6A TO220AB, PK	505	5 $1.53 25 $1.246 100 $0.962 250 $0.892 500 $0.826
IRFBC30APBF DISTI #IRFBC30APBF	Vishay Intertechnologies	RoHS: Compliant	1000
IRFBC30APBF DISTI #IRFBC30APBF	Vishay Intertechnologies	Trans MOSFET N-CH 600V 3.6A 3-Pin(3 Tab) TO-220AB RoHS: Compliant	410	10 $1.9934 100 $1.7314
IRFBC30APBF DISTI #IRFBC30APBF	Vishay Intertechnologies	Trans MOSFET N-CH 600V 3.6A 3-Pin(3 Tab) TO-220AB RoHS: Compliant	2900	50 $0.93 100 $0.782 500 $0.702 1000 $0.649 2000 $0.537
IRFBC30APBF DISTI #IRFBC30APBF	Vishay Intertechnologies	MOSFET, N, 600V, 3.6A, TO-220 RoHS: Compliant	70	1 $1.55 10 $0.806 100 $0.79 250 $0.774 500 $0.758
IRFBC30APBF DISTI #IRFBC30APBF	Vishay Intertechnologies	MOSFET N-Chan 600V 3.6 Amp RoHS: Compliant	0	50 $0.99
IRFBC30APBF DISTI #IRFBC30APBF	Vishay Intertechnologies	MOSFET, N, 600V, 3.6A, TO-220 RoHS: Compliant	44	1 $5.39 10 $4.86 100 $3.91 500 $3.04 1000 $2.52

IRFBC30~~(19)~~
IRFBC3~~(19)~~
IRFBC~~(50)~~
IRFB~~(57)~~
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Vishay Siliconix IRFBC30APBF

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