Vishay Siliconix IRFBC30
- Part Number:
- IRFBC30
- Manufacturer:
- Vishay Siliconix
- Ventron No:
- 2488228-IRFBC30
- Description:
- MOSFET N-CH 600V 3.6A TO-220AB
- Datasheet:
- IRFBC30
Vishay Siliconix IRFBC30 technical specifications, attributes, parameters and parts with similar specifications to Vishay Siliconix IRFBC30.
- MountThrough Hole
- Mounting TypeThrough Hole
- Package / CaseTO-220-3
- Number of Pins3
- Supplier Device PackageTO-220AB
- Weight6.000006g
- Operating Temperature-55°C~150°C TJ
- PackagingTube
- Published2011
- Part StatusObsolete
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Max Operating Temperature150°C
- Min Operating Temperature-55°C
- Voltage - Rated DC600V
- TechnologyMOSFET (Metal Oxide)
- Current Rating3.6A
- Number of Elements1
- Number of Channels1
- Power Dissipation-Max74W Tc
- Element ConfigurationSingle
- Power Dissipation74W
- Turn On Delay Time11 ns
- FET TypeN-Channel
- Rds On (Max) @ Id, Vgs2.2Ohm @ 2.2A, 10V
- Vgs(th) (Max) @ Id4V @ 250μA
- Input Capacitance (Ciss) (Max) @ Vds660pF @ 25V
- Current - Continuous Drain (Id) @ 25°C3.6A Tc
- Gate Charge (Qg) (Max) @ Vgs31nC @ 10V
- Rise Time13ns
- Drain to Source Voltage (Vdss)600V
- Drive Voltage (Max Rds On,Min Rds On)10V
- Vgs (Max)±20V
- Fall Time (Typ)14 ns
- Turn-Off Delay Time35 ns
- Continuous Drain Current (ID)3.6A
- Gate to Source Voltage (Vgs)20V
- Drain to Source Breakdown Voltage600V
- Input Capacitance660pF
- Drain to Source Resistance2.2Ohm
- Rds On Max2.2 Ω
- Height9.01mm
- Length10.41mm
- Width4.7mm
- RoHS StatusNon-RoHS Compliant
- Lead FreeContains Lead
IRFBC30 Overview
As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 660pF @ 25V.This device conducts a continuous drain current (ID) of 3.6A, which is the maximum continuous current transistor can conduct.Using VGS=600V and a specified value of ID, the drain-source breakdown voltage is VDS at which a specified value of ID flows. This device has a drain-source breakdown voltage of 600V (that is, no charge flow from drain to source).When the device is turned off, a turn-off delay time of 35 ns occurs as the input capacitance charges before drain current conduction commences.When a specific gate-to-source voltage (VGS) is applied to bias a MOSFET to the on state, the drain to source resistance is 2.2Ohm, which means the device is not biased.Before drain current conduction can begin, the device's turning-on delay time takes time to charge its input capacitance. This delay time is 11 ns.Voltage at the gate-source terminal of a FET transistor, called the gate-source voltage, or VGS, can be 20V.This transistor requires a drain-source voltage (Vdss) of 600V.In order to reduce power consumption, this device uses a drive voltage of 10V volts (10V).
IRFBC30 Features
a continuous drain current (ID) of 3.6A
a drain-to-source breakdown voltage of 600V voltage
the turn-off delay time is 35 ns
single MOSFETs transistor is 2.2Ohm
a 600V drain to source voltage (Vdss)
IRFBC30 Applications
There are a lot of Vishay Siliconix
IRFBC30 applications of single MOSFETs transistors.
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 660pF @ 25V.This device conducts a continuous drain current (ID) of 3.6A, which is the maximum continuous current transistor can conduct.Using VGS=600V and a specified value of ID, the drain-source breakdown voltage is VDS at which a specified value of ID flows. This device has a drain-source breakdown voltage of 600V (that is, no charge flow from drain to source).When the device is turned off, a turn-off delay time of 35 ns occurs as the input capacitance charges before drain current conduction commences.When a specific gate-to-source voltage (VGS) is applied to bias a MOSFET to the on state, the drain to source resistance is 2.2Ohm, which means the device is not biased.Before drain current conduction can begin, the device's turning-on delay time takes time to charge its input capacitance. This delay time is 11 ns.Voltage at the gate-source terminal of a FET transistor, called the gate-source voltage, or VGS, can be 20V.This transistor requires a drain-source voltage (Vdss) of 600V.In order to reduce power consumption, this device uses a drive voltage of 10V volts (10V).
IRFBC30 Features
a continuous drain current (ID) of 3.6A
a drain-to-source breakdown voltage of 600V voltage
the turn-off delay time is 35 ns
single MOSFETs transistor is 2.2Ohm
a 600V drain to source voltage (Vdss)
IRFBC30 Applications
There are a lot of Vishay Siliconix
IRFBC30 applications of single MOSFETs transistors.
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
IRFBC30 More Descriptions
MOSFET, POWER; N-CHANNEL; 2.2 OHMS (MAX.); 600 V (MIN.); 3.6 A (MAX.) @ 25 DEGC
MOSFET N-CH 600V 3.6A TO-220AB
MOSFET N-CHANNEL 600V
MOSFET N-CH 600V 3.6A TO-220AB
MOSFET N-CHANNEL 600V
The three parts on the right have similar specifications to IRFBC30.
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ImagePart NumberManufacturerMountMounting TypePackage / CaseNumber of PinsSupplier Device PackageWeightOperating TemperaturePackagingPublishedPart StatusMoisture Sensitivity Level (MSL)Max Operating TemperatureMin Operating TemperatureVoltage - Rated DCTechnologyCurrent RatingNumber of ElementsNumber of ChannelsPower Dissipation-MaxElement ConfigurationPower DissipationTurn On Delay TimeFET TypeRds On (Max) @ Id, VgsVgs(th) (Max) @ IdInput Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25°CGate Charge (Qg) (Max) @ VgsRise TimeDrain to Source Voltage (Vdss)Drive Voltage (Max Rds On,Min Rds On)Vgs (Max)Fall Time (Typ)Turn-Off Delay TimeContinuous Drain Current (ID)Gate to Source Voltage (Vgs)Drain to Source Breakdown VoltageInput CapacitanceDrain to Source ResistanceRds On MaxHeightLengthWidthRoHS StatusLead FreeSurface MountTransistor Element MaterialSeriesNumber of TerminationsECCN CodeTerminal PositionPeak Reflow Temperature (Cel)Time@Peak Reflow Temperature-Max (s)JESD-30 CodeQualification StatusConfigurationOperating ModeCase ConnectionTransistor ApplicationDrain Current-Max (Abs) (ID)Drain-source On Resistance-MaxPulsed Drain Current-Max (IDM)DS Breakdown Voltage-MinFactory Lead TimeContact PlatingTerminationResistanceThreshold VoltageDual Supply VoltageNominal VgsREACH SVHCRadiation HardeningSubcategoryJEDEC-95 CodeAvalanche Energy Rating (Eas)View Compare
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IRFBC30Through HoleThrough HoleTO-220-33TO-220AB6.000006g-55°C~150°C TJTube2011Obsolete1 (Unlimited)150°C-55°C600VMOSFET (Metal Oxide)3.6A1174W TcSingle74W11 nsN-Channel2.2Ohm @ 2.2A, 10V4V @ 250μA660pF @ 25V3.6A Tc31nC @ 10V13ns600V10V±20V14 ns35 ns3.6A20V600V660pF2.2Ohm2.2 Ω9.01mm10.41mm4.7mmNon-RoHS CompliantContains Lead-------------------------------
-
-Through HoleTO-273AA----40°C~175°C TJTube2010Obsolete1 (Unlimited)---MOSFET (Metal Oxide)-1-300W Tc---N-Channel3.7m Ω @ 95A, 10V4V @ 250μA7360pF @ 25V206A Tc200nC @ 10V-40V10V±20V-----------Non-RoHS Compliant-NOSILICONHEXFET®3EAR99SINGLENOT SPECIFIEDNOT SPECIFIEDR-PSIP-T3Not QualifiedSINGLE WITH BUILT-IN DIODEENHANCEMENT MODEDRAINSWITCHING95A0.0037Ohm650A40V------------
-
Through HoleThrough HoleTO-220-33TO-220AB--55°C~175°C TJTube2007Active1 (Unlimited)175°C-55°C-MOSFET (Metal Oxide)-1-144W TcSingle144W8.6 nsN-Channel72.5mOhm @ 15A, 10V5V @ 100μA1710pF @ 50V25A Tc38nC @ 10V14.6ns200V10V±20V9.9 ns17.1 ns25A20V200V1.71nF72.5mOhm72.5 mΩ9.02mm10.668mm4.826mmROHS3 CompliantLead Free------------------12 WeeksTinThrough Hole72.5MOhm5V200V5 VNo SVHCNo---
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Through HoleThrough HoleTO-220-33---55°C~175°C TJTube2000Not For New Designs1 (Unlimited)--200VMOSFET (Metal Oxide)24A1-3.8W Ta 170W TcSingle170W14 nsN-Channel100m Ω @ 14A, 10V5.5V @ 250μA1960pF @ 25V24A Tc86nC @ 10V32ns-10V±30V16 ns26 ns24A30V200V---4.69mm10.54mm4.699mmROHS3 CompliantContains Lead, Lead Free-SILICONHEXFET®3EAR99------ENHANCEMENT MODEDRAINSWITCHING--96A-14 WeeksTinThrough Hole100MOhm5.5V200V5.5 VNo SVHCNoFET General Purpose PowerTO-220AB250 mJ
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