Infineon Technologies IRFBA90N20DPBF

Name: IRFBA90N20DPBF
Brand: Infineon Technologies
SKU: 2479501-IRFBA90N20DPBF
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: IRFBA90N20DPBF

Manufacturer:: Infineon Technologies

Ventron No:: 2479501-IRFBA90N20DPBF

Description:: MOSFET N-CH 200V 98A SUPER-220

ECAD Model:

Datasheet:: IRFBA90N20DPBF

Specifications

Infineon Technologies IRFBA90N20DPBF technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies IRFBA90N20DPBF.

Factory Lead Time
25 Weeks
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-273AA
Number of Pins
3
Transistor Element Material
SILICON
Operating Temperature
-55°C~175°C TJ
Packaging
Tube
Series
HEXFET®
Published
2004
Part Status
Not For New Designs
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Resistance
23Ohm
Additional Feature
AVALANCHE RATED
Subcategory
FET General Purpose Power
Voltage - Rated DC
200V
Technology
MOSFET (Metal Oxide)
Current Rating
98A
Number of Elements
1
Power Dissipation-Max
650W Tc
Element Configuration
Single
Operating Mode
ENHANCEMENT MODE
Power Dissipation
650W
Case Connection
DRAIN
Turn On Delay Time
23 ns
FET Type
N-Channel
Transistor Application
SWITCHING
Rds On (Max) @ Id, Vgs
23m Ω @ 59A, 10V
Vgs(th) (Max) @ Id
5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds
6080pF @ 25V
Current - Continuous Drain (Id) @ 25°C
98A Tc
Gate Charge (Qg) (Max) @ Vgs
240nC @ 10V
Rise Time
160ns
Drive Voltage (Max Rds On,Min Rds On)
10V
Vgs (Max)
±30V
Fall Time (Typ)
77 ns
Turn-Off Delay Time
39 ns
Continuous Drain Current (ID)
98A
Threshold Voltage
5V
Gate to Source Voltage (Vgs)
30V
Drain Current-Max (Abs) (ID)
95A
Drain to Source Breakdown Voltage
200V
Dual Supply Voltage
200V
Avalanche Energy Rating (Eas)
960 mJ
Nominal Vgs
5 V
Height
15.0114mm
Length
10.9982mm
Width
5mm
REACH SVHC
No SVHC
Radiation Hardening
No
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free

Description

IRFBA90N20DPBF Description IRFBA90N20DPBF is a 200V Single N-Channel HEXFET Power MOSFET in a Super 220 (TO-273AA) package. The IRFBA90N20DPBF MOSFET features a low gate-to-drain charge to reduce switching losses and is fully characterized by avalanche voltage and current. The IRFBA90N20DPBF is ideal for high-frequency dc-dc converters.
IRFBA90N20DPBF Features RoHS Compliant
Industry-leading quality
Fully Characterized Avalanche Voltage and Current
Low Gate-to-Drain Charge to Reduce Switching Losses
Fully Characterized Capacitance Including Effective Coss to Simplify Design
IRFBA90N20DPBF Applications Relay driver
High-speed line driver
High-side load switch
Switching circuits

IRFBA90N20DPBF More Descriptions

200V Single N-Channel HEXFET Power MOSFET in a Super 220 (TO-273AA) package, SUPER220-3, RoHSInfineon SCT
Trans Mosfet N-Ch 200V 98A 3-Pin(3 Tab) To-273Aa Rohs Compliant: Yes
Single N-Channel 200 V 0.023 Ohm 160 nC HEXFET® Power Mosfet - SBM-2
IRFBA90N20DPBF,MOSFET, 200V, 9 8A, 23 MOHM, 160 NC QG, TO-27
Power Field-Effect Transistor, 95A I(D), 200V, 0.023ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-273AA
Benefits: RoHS Compliant; Industry-leading quality; Fully Characterized Avalanche Voltage and Current; Low Gate-to-Drain Charge to Reduce Switching Losses; Fully Characterized Capacitance Including Effective Coss to Simplify Design

Product Comparison

The three parts on the right have similar specifications to IRFBA90N20DPBF.

Image

Part Number

Manufacturer

Factory Lead Time

Mount

Mounting Type

Package / Case

Number of Pins

Transistor Element Material

Operating Temperature

Packaging

Series

Published

Part Status

Moisture Sensitivity Level (MSL)

Number of Terminations

ECCN Code

Resistance

Additional Feature

Subcategory

Voltage - Rated DC

Technology

Current Rating

Number of Elements

Power Dissipation-Max

Element Configuration

Operating Mode

Power Dissipation

Case Connection

Turn On Delay Time

FET Type

Transistor Application

Rds On (Max) @ Id, Vgs

Vgs(th) (Max) @ Id

Input Capacitance (Ciss) (Max) @ Vds

Current - Continuous Drain (Id) @ 25°C

Gate Charge (Qg) (Max) @ Vgs

Rise Time

Drive Voltage (Max Rds On,Min Rds On)

Vgs (Max)

Fall Time (Typ)

Turn-Off Delay Time

Continuous Drain Current (ID)

Threshold Voltage

Gate to Source Voltage (Vgs)

Drain Current-Max (Abs) (ID)

Drain to Source Breakdown Voltage

Dual Supply Voltage

Avalanche Energy Rating (Eas)

Nominal Vgs

Height

Length

Width

REACH SVHC

Radiation Hardening

RoHS Status

Lead Free

Supplier Device Package

Weight

Max Operating Temperature

Min Operating Temperature

Number of Channels

Drain to Source Voltage (Vdss)

Input Capacitance

Drain to Source Resistance

Rds On Max

Peak Reflow Temperature (Cel)

Time@Peak Reflow Temperature-Max (s)

Contact Plating

Termination

View Compare
IRFBA90N20DPBF

Infineon Technologies

25 Weeks

Through Hole

Through Hole

TO-273AA

3

SILICON

-55°C~175°C TJ

Tube

HEXFET®

2004

Not For New Designs

1 (Unlimited)

3

EAR99

23Ohm

AVALANCHE RATED

FET General Purpose Power

200V

MOSFET (Metal Oxide)

98A

1

650W Tc

Single

ENHANCEMENT MODE

650W

DRAIN

23 ns

N-Channel

SWITCHING

23m Ω @ 59A, 10V

5V @ 250μA

6080pF @ 25V

98A Tc

240nC @ 10V

160ns

10V

±30V

77 ns

39 ns

98A

5V

30V

95A

200V

200V

960 mJ

5 V

15.0114mm

10.9982mm

5mm

No SVHC

No

ROHS3 Compliant

Lead Free

-

-

-

-

-

-

-

-

-

-

-

-

-

-
IRFB16N50KPBF

Vishay Siliconix

-

Through Hole

Through Hole

TO-220-3

3

-

-55°C~150°C TJ

Tube

-

2004

Obsolete

1 (Unlimited)

-

-

-

-

-

500V

MOSFET (Metal Oxide)

17A

-

280W Tc

Single

-

280W

-

20 ns

N-Channel

-

350mOhm @ 10A, 10V

5V @ 250μA

2210pF @ 25V

17A Tc

89nC @ 10V

77ns

10V

±30V

30 ns

38 ns

17A

-

30V

-

500V

-

-

-

9.01mm

10.41mm

4.7mm

-

-

ROHS3 Compliant

Lead Free

TO-220AB

6.000006g

150°C

-55°C

1

500V

2.21nF

350mOhm

350 mΩ

-

-

-

-

IRFBA90N20DPBF vs IRFB16N50KPBF
IRFB7787PBF

Infineon Technologies

12 Weeks

Through Hole

Through Hole

TO-220-3

3

-

-55°C~175°C TJ

Tube

HEXFET®, StrongIRFET™

2001

Active

1 (Unlimited)

-

EAR99

-

-

-

-

MOSFET (Metal Oxide)

-

-

125W Tc

Single

-

-

-

11 ns

N-Channel

-

8.4m Ω @ 46A, 10V

3.7V @ 100μA

4020pF @ 25V

76A Tc

109nC @ 10V

48ns

6V 10V

±20V

39 ns

51 ns

76A

-

20V

-

-

-

-

-

16.51mm

10.67mm

4.83mm

No SVHC

-

ROHS3 Compliant

Lead Free

-

6.000006g

-

-

1

75V

-

-

-

NOT SPECIFIED

NOT SPECIFIED

-

-

IRFBA90N20DPBF vs IRFB7787PBF
IRFB5620PBF

Infineon Technologies

12 Weeks

Through Hole

Through Hole

TO-220-3

3

-

-55°C~175°C TJ

Tube

-

2007

Active

1 (Unlimited)

-

-

72.5MOhm

-

-

-

MOSFET (Metal Oxide)

-

1

144W Tc

Single

-

144W

-

8.6 ns

N-Channel

-

72.5mOhm @ 15A, 10V

5V @ 100μA

1710pF @ 50V

25A Tc

38nC @ 10V

14.6ns

10V

±20V

9.9 ns

17.1 ns

25A

5V

20V

-

200V

200V

-

5 V

9.02mm

10.668mm

4.826mm

No SVHC

No

ROHS3 Compliant

Lead Free

TO-220AB

-

175°C

-55°C

-

200V

1.71nF

72.5mOhm

72.5 mΩ

-

-

Tin

Through Hole

IRFBA90N20DPBF vs IRFB5620PBF