Infineon Technologies IRFB7434PBF

Name: IRFB7434PBF
Brand: Infineon Technologies
SKU: 2483600-IRFB7434PBF
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: IRFB7434PBF

Manufacturer:: Infineon Technologies

Ventron No:: 2483600-IRFB7434PBF

Description:: MOSFET N CH 40V 195A TO220

ECAD Model:

Datasheet:: IRFB7434PBF

Specifications

Infineon Technologies IRFB7434PBF technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies IRFB7434PBF.

Factory Lead Time
12 Weeks
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-220-3
Number of Pins
3
Transistor Element Material
SILICON
Operating Temperature
-55°C~175°C TJ
Packaging
Tube
Series
HEXFET®, StrongIRFET™
Published
2012
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Resistance
1.6MOhm
Subcategory
FET General Purpose Power
Technology
MOSFET (Metal Oxide)
Number of Elements
1
Power Dissipation-Max
294W Tc
Element Configuration
Single
Operating Mode
ENHANCEMENT MODE
Power Dissipation
294W
Case Connection
DRAIN
Turn On Delay Time
24 ns
FET Type
N-Channel
Transistor Application
SWITCHING
Rds On (Max) @ Id, Vgs
1.6m Ω @ 100A, 10V
Vgs(th) (Max) @ Id
3.9V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds
10820pF @ 25V
Current - Continuous Drain (Id) @ 25°C
195A Tc
Gate Charge (Qg) (Max) @ Vgs
324nC @ 10V
Rise Time
68ns
Drive Voltage (Max Rds On,Min Rds On)
6V 10V
Vgs (Max)
±20V
Turn-Off Delay Time
115 ns
Continuous Drain Current (ID)
195A
Threshold Voltage
3V
JEDEC-95 Code
TO-220AB
Gate to Source Voltage (Vgs)
20V
Drain to Source Breakdown Voltage
40V
Avalanche Energy Rating (Eas)
490 mJ
Recovery Time
38 ns
Nominal Vgs
3 V
Height
16.51mm
Length
10.67mm
Width
4.83mm
REACH SVHC
No SVHC
Radiation Hardening
No
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free

Description

IRFB7434PBF   Description
IRFB7434PBF can Improved Gate, Avalanche and Dynamic dV/dt Ruggedness and be Fully Characterized Capacitance and Avalanche SOA.The decice Enhanced body diode dV/dt and dI/dt Capability.It is  Lead-Free* and RoHS Compliant, Halogen-Free*.
IRFB7434PBF   Application
Brushed Motor drive applications BLDC Motor drive applications Battery powered circuits Half-bridge and full-bridge topologies Synchronous rectifier applications Resonant mode power supplies OR-ing and redundant power switches DC/DC and AC/DC converters DC/AC Inverters
IRFB7434PBF   Features
Improved Gate, Avalanche and Dynamic dV/dt Ruggedness Fully Characterized Capacitance and Avalanche SOA Enhanced body diode dV/dt and dI/dt Capability Lead-Free* RoHS Compliant, Halogen-Free*

IRFB7434PBF More Descriptions

40V Single N-Channel HEXFET Power MOSFET in a Lead Free TO-220AB package, TO220-3, RoHSInfineon SCT
Single N-Channel 40 V 1.6 mOhm 324 nC HEXFET® Power Mosfet - TO-220-3
Trans MOSFET N-CH 40V 317A 3-Pin(3 Tab) TO-220AB Tube - Rail/Tube
Power Field-Effect Transistor, 195A I(D), 40V, 0.0016ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
MOSFET, N-CH, 40V, 195A, TO-220AB; Transistor Polarity:N Channel; Continuous Drain Current Id:195A; Drain Source Voltage Vds:40V; On Resistance Rds(on):0.00125ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:3V; Power Dissipation Pd:294W; Operating Temperature Min:-55°C; Operating Temperature Max:175°C; Transistor Case Style:TO-220AB; No. of Pins:3; MSL:(Not Applicable); SVHC:No SVHC (19-Dec-2012); Operating Temperature Range:-55°C to 175°C
Benefits: RoHS Compliant; Improved Gate, Avalanche and Dynamic dV/dt Ruggedness; Fully Characterized Capacitance and Avalanche SOA; Enhanced body diode dV/dt and dI/dt Capability | Target Applications: AC-DC; Battery Operated Drive; Consumer Full-Bridge; Full-Bridge; Push-Pull

Product Comparison

The three parts on the right have similar specifications to IRFB7434PBF.

Image

Part Number

Manufacturer

Factory Lead Time

Mount

Mounting Type

Package / Case

Number of Pins

Transistor Element Material

Operating Temperature

Packaging

Series

Published

Part Status

Moisture Sensitivity Level (MSL)

Number of Terminations

ECCN Code

Resistance

Subcategory

Technology

Number of Elements

Power Dissipation-Max

Element Configuration

Operating Mode

Power Dissipation

Case Connection

Turn On Delay Time

FET Type

Transistor Application

Rds On (Max) @ Id, Vgs

Vgs(th) (Max) @ Id

Input Capacitance (Ciss) (Max) @ Vds

Current - Continuous Drain (Id) @ 25°C

Gate Charge (Qg) (Max) @ Vgs

Rise Time

Drive Voltage (Max Rds On,Min Rds On)

Vgs (Max)

Turn-Off Delay Time

Continuous Drain Current (ID)

Threshold Voltage

JEDEC-95 Code

Gate to Source Voltage (Vgs)

Drain to Source Breakdown Voltage

Avalanche Energy Rating (Eas)

Recovery Time

Nominal Vgs

Height

Length

Width

REACH SVHC

Radiation Hardening

RoHS Status

Lead Free

Supplier Device Package

Max Operating Temperature

Min Operating Temperature

Drain to Source Voltage (Vdss)

Input Capacitance

Rds On Max

Weight

Voltage - Rated DC

Current Rating

Number of Channels

Fall Time (Typ)

Drain to Source Resistance

Contact Plating

Termination

Pulsed Drain Current-Max (IDM)

Dual Supply Voltage

View Compare
IRFB7434PBF

Infineon Technologies

12 Weeks

Through Hole

Through Hole

TO-220-3

3

SILICON

-55°C~175°C TJ

Tube

HEXFET®, StrongIRFET™

2012

Active

1 (Unlimited)

3

EAR99

1.6MOhm

FET General Purpose Power

MOSFET (Metal Oxide)

1

294W Tc

Single

ENHANCEMENT MODE

294W

DRAIN

24 ns

N-Channel

SWITCHING

1.6m Ω @ 100A, 10V

3.9V @ 250μA

10820pF @ 25V

195A Tc

324nC @ 10V

68ns

6V 10V

±20V

115 ns

195A

3V

TO-220AB

20V

40V

490 mJ

38 ns

3 V

16.51mm

10.67mm

4.83mm

No SVHC

No

ROHS3 Compliant

Lead Free

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-
IRFB4510GPBF

Infineon Technologies

-

Through Hole

Through Hole

TO-220-3

3

-

-55°C~175°C TJ

Tube

HEXFET®

2012

Obsolete

1 (Unlimited)

-

-

-

-

MOSFET (Metal Oxide)

1

140W Tc

-

-

140W

-

-

N-Channel

-

13.5mOhm @ 37A, 10V

4V @ 100μA

3180pF @ 50V

62A Tc

87nC @ 10V

-

10V

±20V

-

62A

-

-

20V

-

-

-

-

-

-

-

-

-

RoHS Compliant

-

TO-220AB

175°C

-55°C

100V

3.18nF

13.5 mΩ

-

-

-

-

-

-

-

-

-

-

IRFB7434PBF vs IRFB4510GPBF
IRFB16N50KPBF

Vishay Siliconix

-

Through Hole

Through Hole

TO-220-3

3

-

-55°C~150°C TJ

Tube

-

2004

Obsolete

1 (Unlimited)

-

-

-

-

MOSFET (Metal Oxide)

-

280W Tc

Single

-

280W

-

20 ns

N-Channel

-

350mOhm @ 10A, 10V

5V @ 250μA

2210pF @ 25V

17A Tc

89nC @ 10V

77ns

10V

±30V

38 ns

17A

-

-

30V

500V

-

-

-

9.01mm

10.41mm

4.7mm

-

-

ROHS3 Compliant

Lead Free

TO-220AB

150°C

-55°C

500V

2.21nF

350 mΩ

6.000006g

500V

17A

1

30 ns

350mOhm

-

-

-

-

IRFB7434PBF vs IRFB16N50KPBF
IRFB23N20DPBF

Infineon Technologies

14 Weeks

Through Hole

Through Hole

TO-220-3

3

SILICON

-55°C~175°C TJ

Tube

HEXFET®

2000

Not For New Designs

1 (Unlimited)

3

EAR99

100MOhm

FET General Purpose Power

MOSFET (Metal Oxide)

1

3.8W Ta 170W Tc

Single

ENHANCEMENT MODE

170W

DRAIN

14 ns

N-Channel

SWITCHING

100m Ω @ 14A, 10V

5.5V @ 250μA

1960pF @ 25V

24A Tc

86nC @ 10V

32ns

10V

±30V

26 ns

24A

5.5V

TO-220AB

30V

200V

250 mJ

-

5.5 V

4.69mm

10.54mm

4.699mm

No SVHC

No

ROHS3 Compliant

Contains Lead, Lead Free

-

-

-

-

-

-

-

200V

24A

-

16 ns

-

Tin

Through Hole

96A

200V

IRFB7434PBF vs IRFB23N20DPBF

Certification

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IRFB7434PBF Specification

Part Number	Manufacturers	Description	Stock	Price
IRFB7434PBF DISTI #	Infineon Technologies AG	Trans MOSFET N-CH Si 40V 317A 3-Pin(3 Tab) TO-220A RoHS: Compliant	400	450 $0.8389 550 $0.8142
IRFB7434PBF DISTI #	Infineon Technologies AG	Trans MOSFET N-CH Si 40V 317A 3-Pin(3 Tab) TO-220A RoHS: Compliant	250	7 $3.9907 10 $2.0655 50 $2.0017 100 $1.683 200 $1.4917
IRFB7434PBF DISTI #	Infineon Technologies AG	MOSFET N CH 40V 195A TO220 RoHS: Compliant	994	1 $2.73 50 $2.231 100 $2.0222 500 $1.60488 1000 $1.35446
IRFB7434PBF DISTI #	Infineon Technologies AG	Trans MOSFET N-CH Si 40V 317A 3-Pin(3 Tab) TO-220A RoHS: Compliant	250	1 $3.13 10 $1.62 50 $1.57 100 $1.32 200 $1.17
IRFB7434PBF DISTI #	Infineon Technologies AG	Trans MOSFET N-CH Si 40V 317A 3-Pin(3 Tab) TO-220A RoHS: Compliant	400	1 $5.96 10 $2.17 50 $1.93 100 $1.59 200 $1.46
IRFB7434PBF DISTI #	Infineon Technologies AG	Trans MOSFET N-CH Si 40V 317A 3-Pin(3 Tab) TO-220A RoHS: Compliant	1000	1 $1.7803 10 $1.5744 100 $1.3262 500 $1.1597
IRFB7434PBF DISTI #	Infineon Technologies AG	Trans MOSFET N-CH 40V 317A 3-Pin(3 Tab) TO-220AB T RoHS: Compliant	650	450 $0.8739 550 $0.8429 1000 $0.8119 2250 $0.7849 4500 $0.7709
IRFB7434PBF DISTI #	Infineon Technologies AG	Trans MOSFET N-CH 40V 317A 3-Pin(3 Tab) TO-220AB T RoHS: Compliant	5000	1000 $1.08927 2000 $1.04451 3000 $1.03039 5000 $0.99025 10000 $0.97755 25000 $0.95311 50000 $0.92986
IRFB7434PBF DISTI #	Infineon Technologies AG	Trans MOSFET N-CH 40V 317A 3-Pin(3 Tab) TO-220AB T RoHS: Compliant	900	1 $1.2369 10 $0.9619 25 $0.8919 50 $0.8639 100 $0.8499 500 $0.8419 1000 $0.8309
IRFB7434PBF DISTI #	Infineon Technologies AG	MOSFET Transistor, N Channel, 195 A, 40 V, 0.00125	745	1 $2.5 10 $2.15
IRFB7434PBF DISTI #	Infineon Technologies AG	MOSFET 40V 1.6mOhm 195A HEXFET 294W 216nC RoHS: Compliant	1691	1 $2.24 10 $1.9 100 $1.52 500 $1.33
IRFB7434PBF DISTI #	Infineon Technologies AG	STRONGIRFET MOSFET N-CH 40V 195A TO220AB, TU	14	25 $1.07 50 $1.01 100 $0.97 200 $0.95
IRFB7434PBF DISTI #	Infineon Technologies AG	STRONGIRFET MOSFET N-CH 40V 195A TO220AB, EA	8	1 $2 25 $1.07 50 $1.01 100 $0.97 200 $0.95
IRFB7434PBF DISTI #	Infineon Technologies AG	Transistor: N-MOSFET, unipolar, 40V, 317A, 294	117	1 $2.68 3 $2.36 10 $1.97 100 $1.67
IRFB7434PBF DISTI #	Infineon Technologies AG	N-Ch 40V 195A 294W 0,0016R TO220AB RoHS: Compliant	510	10 $1.22 50 $0.9172 200 $0.8172 500 $0.7868
IRFB7434PBF DISTI #	Infineon Technologies AG	N-CH 40V 317A 1,6mOhm TO220-3 RoHS: Compliant	0	1000 $1.0984
IRFB7434PBF DISTI #	INFINEON/IR	TO-220AB RoHS: Compliant	3276	700 $1.03 3276 $0.96
IRFB7434PBF DISTI #	International Rectifier	RoHS: Compliant	123
IRFB7434PBF DISTI #	Infineon Technologies AG	MOSFET, N-CH, 40V, 195A, TO-220AB RoHS: Compliant	745	1 $3.55 10 $3.01 100 $2.41 500 $2.1
IRFB7434PBF DISTI #	Infineon Technologies AG	MOSFET, N-CH, 40V, 195A, TO-220AB RoHS: Compliant	745	1 $1.93 10 $1.02 100 $0.96 250 $0.948 500 $0.937

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IRFB74~~(15)~~
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IRF~~(69)~~

Infineon Technologies IRFB7434PBF

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