Infineon Technologies IRFB59N10DPBF
- Part Number:
- IRFB59N10DPBF
- Manufacturer:
- Infineon Technologies
- Ventron No:
- 2482059-IRFB59N10DPBF
- Description:
- MOSFET N-CH 100V 59A TO-220AB
- ECAD Model:
-
- Datasheet:
- IRFB59N10DPBF
Infineon Technologies IRFB59N10DPBF technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies IRFB59N10DPBF.
- Factory Lead Time14 Weeks
- MountThrough Hole
- Mounting TypeThrough Hole
- Package / CaseTO-220-3
- Number of Pins3
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~175°C TJ
- PackagingTube
- SeriesHEXFET®
- Published2000
- JESD-609 Codee3
- Part StatusNot For New Designs
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- TerminationThrough Hole
- ECCN CodeEAR99
- Resistance25mOhm
- Terminal FinishMatte Tin (Sn) - with Nickel (Ni) barrier
- SubcategoryFET General Purpose Power
- Voltage - Rated DC100V
- TechnologyMOSFET (Metal Oxide)
- Terminal PositionSINGLE
- Peak Reflow Temperature (Cel)250
- Current Rating59A
- Time@Peak Reflow Temperature-Max (s)30
- Number of Elements1
- ConfigurationSINGLE WITH BUILT-IN DIODE
- Power Dissipation-Max3.8W Ta 200W Tc
- Operating ModeENHANCEMENT MODE
- Power Dissipation200W
- Case ConnectionDRAIN
- Turn On Delay Time16 ns
- FET TypeN-Channel
- Transistor ApplicationSWITCHING
- Rds On (Max) @ Id, Vgs25m Ω @ 35.4A, 10V
- Vgs(th) (Max) @ Id5.5V @ 250μA
- Input Capacitance (Ciss) (Max) @ Vds2450pF @ 25V
- Current - Continuous Drain (Id) @ 25°C59A Tc
- Gate Charge (Qg) (Max) @ Vgs114nC @ 10V
- Rise Time90ns
- Drive Voltage (Max Rds On,Min Rds On)10V
- Vgs (Max)±30V
- Fall Time (Typ)12 ns
- Turn-Off Delay Time20 ns
- Continuous Drain Current (ID)59A
- Threshold Voltage5.5V
- JEDEC-95 CodeTO-220AB
- Gate to Source Voltage (Vgs)30V
- Drain to Source Breakdown Voltage100V
- Dual Supply Voltage100V
- Nominal Vgs5.5 V
- Height8.763mm
- Width4.69mm
- REACH SVHCNo SVHC
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
IRFB59N10DPBF Description
IRFB59N10DPBF MOSFET is a commonly used switching device in the application of switching power supply, which is easy to drive and short switching time. The power consumption of MOSFET is conduction loss and switching loss. The conduction loss is I2R loss.
IRFB59N10DPBF Applications
High frequency DC-DC converters UPS/Motor Control Inverters Lead-Free IRFB59N10DPBF Features
Low Gate-to-Drain Charge to Reduce Switching Losses Fully Characterized Capacitance Including Effective Coss to Simplify Design,(See App.Note AN1001) Fully Characterized Avalanche Voltage and Current
IRFB59N10DPBF MOSFET is a commonly used switching device in the application of switching power supply, which is easy to drive and short switching time. The power consumption of MOSFET is conduction loss and switching loss. The conduction loss is I2R loss.
IRFB59N10DPBF Applications
High frequency DC-DC converters UPS/Motor Control Inverters Lead-Free IRFB59N10DPBF Features
Low Gate-to-Drain Charge to Reduce Switching Losses Fully Characterized Capacitance Including Effective Coss to Simplify Design,(See App.Note AN1001) Fully Characterized Avalanche Voltage and Current
IRFB59N10DPBF More Descriptions
MOSFET, Power;N-Ch;VDSS 100V;RDS(ON) 0.025Ohm;ID 59A;TO-220AB;PD 200W;VGS /-30V
Single N-Channel 100 V 25 mOhm 114 nC HEXFET® Power Mosfet - TO-220-3
IRFB59N10DPBF,MOSFET, 100V, 59 A, 25 MOHM, 76 NC QG, TO-220A
100V Single N-Channel HEXFET Power MOSFET in a TO-220AB package, TO220-3, RoHSInfineon SCT
Power Field-Effect Transistor, 59A I(D), 100V, 0.025ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220AB, 3 PIN
MOSFET; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:100V; Continuous Drain Current, Id:59A; On Resistance, Rds(on):25mohm; Rds(on) Test Voltage, Vgs:10V; Package/Case:TO-220AB ;RoHS Compliant: Yes
Benefits: RoHS Compliant; Industry-leading quality; Fully Characterized Avalanche Voltage and Current; Low Gate-to-Drain Charge to Reduce Switching Losses; Fully Characterized Capacitance Including Effective Coss to Simplify Design
Single N-Channel 100 V 25 mOhm 114 nC HEXFET® Power Mosfet - TO-220-3
IRFB59N10DPBF,MOSFET, 100V, 59 A, 25 MOHM, 76 NC QG, TO-220A
100V Single N-Channel HEXFET Power MOSFET in a TO-220AB package, TO220-3, RoHSInfineon SCT
Power Field-Effect Transistor, 59A I(D), 100V, 0.025ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220AB, 3 PIN
MOSFET; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:100V; Continuous Drain Current, Id:59A; On Resistance, Rds(on):25mohm; Rds(on) Test Voltage, Vgs:10V; Package/Case:TO-220AB ;RoHS Compliant: Yes
Benefits: RoHS Compliant; Industry-leading quality; Fully Characterized Avalanche Voltage and Current; Low Gate-to-Drain Charge to Reduce Switching Losses; Fully Characterized Capacitance Including Effective Coss to Simplify Design
The three parts on the right have similar specifications to IRFB59N10DPBF.
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ImagePart NumberManufacturerFactory Lead TimeMountMounting TypePackage / CaseNumber of PinsTransistor Element MaterialOperating TemperaturePackagingSeriesPublishedJESD-609 CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsTerminationECCN CodeResistanceTerminal FinishSubcategoryVoltage - Rated DCTechnologyTerminal PositionPeak Reflow Temperature (Cel)Current RatingTime@Peak Reflow Temperature-Max (s)Number of ElementsConfigurationPower Dissipation-MaxOperating ModePower DissipationCase ConnectionTurn On Delay TimeFET TypeTransistor ApplicationRds On (Max) @ Id, VgsVgs(th) (Max) @ IdInput Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25°CGate Charge (Qg) (Max) @ VgsRise TimeDrive Voltage (Max Rds On,Min Rds On)Vgs (Max)Fall Time (Typ)Turn-Off Delay TimeContinuous Drain Current (ID)Threshold VoltageJEDEC-95 CodeGate to Source Voltage (Vgs)Drain to Source Breakdown VoltageDual Supply VoltageNominal VgsHeightWidthREACH SVHCRadiation HardeningRoHS StatusLead FreeSupplier Device PackageWeightMax Operating TemperatureMin Operating TemperatureNumber of ChannelsElement ConfigurationDrain to Source Voltage (Vdss)Input CapacitanceDrain to Source ResistanceRds On MaxLengthContact PlatingView Compare
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IRFB59N10DPBF14 WeeksThrough HoleThrough HoleTO-220-33SILICON-55°C~175°C TJTubeHEXFET®2000e3Not For New Designs1 (Unlimited)3Through HoleEAR9925mOhmMatte Tin (Sn) - with Nickel (Ni) barrierFET General Purpose Power100VMOSFET (Metal Oxide)SINGLE25059A301SINGLE WITH BUILT-IN DIODE3.8W Ta 200W TcENHANCEMENT MODE200WDRAIN16 nsN-ChannelSWITCHING25m Ω @ 35.4A, 10V5.5V @ 250μA2450pF @ 25V59A Tc114nC @ 10V90ns10V±30V12 ns20 ns59A5.5VTO-220AB30V100V100V5.5 V8.763mm4.69mmNo SVHCNoROHS3 CompliantLead Free------------- -
-Through HoleThrough HoleTO-220-33--55°C~150°C TJTube-2004-Obsolete1 (Unlimited)------500VMOSFET (Metal Oxide)--17A---280W Tc-280W-20 nsN-Channel-350mOhm @ 10A, 10V5V @ 250μA2210pF @ 25V17A Tc89nC @ 10V77ns10V±30V30 ns38 ns17A--30V500V--9.01mm4.7mm--ROHS3 CompliantLead FreeTO-220AB6.000006g150°C-55°C1Single500V2.21nF350mOhm350 mΩ10.41mm-
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12 WeeksThrough HoleThrough HoleTO-220-33--55°C~175°C TJTubeHEXFET®, StrongIRFET™2001-Active1 (Unlimited)--EAR99----MOSFET (Metal Oxide)-NOT SPECIFIED-NOT SPECIFIED--125W Tc---11 nsN-Channel-8.4m Ω @ 46A, 10V3.7V @ 100μA4020pF @ 25V76A Tc109nC @ 10V48ns6V 10V±20V39 ns51 ns76A--20V---16.51mm4.83mmNo SVHC-ROHS3 CompliantLead Free-6.000006g--1Single75V---10.67mm-
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12 WeeksThrough HoleThrough HoleTO-220-33--55°C~175°C TJTube-2007-Active1 (Unlimited)-Through Hole-72.5MOhm---MOSFET (Metal Oxide)----1-144W Tc-144W-8.6 nsN-Channel-72.5mOhm @ 15A, 10V5V @ 100μA1710pF @ 50V25A Tc38nC @ 10V14.6ns10V±20V9.9 ns17.1 ns25A5V-20V200V200V5 V9.02mm4.826mmNo SVHCNoROHS3 CompliantLead FreeTO-220AB-175°C-55°C-Single200V1.71nF72.5mOhm72.5 mΩ10.668mmTin
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