Infineon Technologies IRFB4620PBF
- Part Number:
- IRFB4620PBF
- Manufacturer:
- Infineon Technologies
- Ventron No:
- 3586184-IRFB4620PBF
- Description:
- MOSFET N-CH 200V 25A TO-220AB
- ECAD Model:
-
- Datasheet:
- IRFB4620PBF
Infineon Technologies IRFB4620PBF technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies IRFB4620PBF.
- Factory Lead Time12 Weeks
- MountThrough Hole
- Mounting TypeThrough Hole
- Package / CaseTO-220-3
- Number of Pins3
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~175°C TJ
- PackagingTube
- SeriesHEXFET®
- Published2008
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- TerminationThrough Hole
- ECCN CodeEAR99
- Resistance72.5MOhm
- SubcategoryFET General Purpose Power
- TechnologyMOSFET (Metal Oxide)
- Number of Elements1
- Power Dissipation-Max144W Tc
- Element ConfigurationSingle
- Operating ModeENHANCEMENT MODE
- Power Dissipation144W
- Turn On Delay Time13.4 ns
- FET TypeN-Channel
- Transistor ApplicationSWITCHING
- Rds On (Max) @ Id, Vgs72.5m Ω @ 15A, 10V
- Vgs(th) (Max) @ Id5V @ 100μA
- Input Capacitance (Ciss) (Max) @ Vds1710pF @ 50V
- Current - Continuous Drain (Id) @ 25°C25A Tc
- Gate Charge (Qg) (Max) @ Vgs38nC @ 10V
- Rise Time22.4ns
- Drive Voltage (Max Rds On,Min Rds On)10V
- Vgs (Max)±20V
- Fall Time (Typ)14.8 ns
- Turn-Off Delay Time25.4 ns
- Continuous Drain Current (ID)25A
- Threshold Voltage3V
- JEDEC-95 CodeTO-220AB
- Gate to Source Voltage (Vgs)20V
- Drain to Source Breakdown Voltage200V
- Dual Supply Voltage200V
- Nominal Vgs3 V
- Height9.02mm
- Length10.668mm
- Width4.826mm
- REACH SVHCNo SVHC
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
IRFB4620PBF Description
IRFB4620PBF is an N-channel Power MOSFET transistor from the manufacturer Infineon Technologies with a voltage of 200V. The operating temperature of IRFB4620PBF is -55°C~175°C TJ and its maximum power dissipation is 144W. IRFB4620PBF has 3 pins and it is available in Tube packaging way. The Turn-On Delay Time of IRFB4620PBF is 13.4 ns and its Turn-Off Delay Time is 25.4 ns.
IRFB4620PBF Features
Improved Gate, Avalanche and Dynamic dV/dt Ruggedness
Fully Characterized Capacitance and Avalanche SOA
Enhanced body diode dV/dt and dI/dt Capability
Lead-Free
IRFB4620PBF Applications
High Efficiency Synchronous Rectification in SMPS
Uninterruptible Power Supply
High Speed Power Switching
Hard Switched and High Frequency Circuits
IRFB4620PBF is an N-channel Power MOSFET transistor from the manufacturer Infineon Technologies with a voltage of 200V. The operating temperature of IRFB4620PBF is -55°C~175°C TJ and its maximum power dissipation is 144W. IRFB4620PBF has 3 pins and it is available in Tube packaging way. The Turn-On Delay Time of IRFB4620PBF is 13.4 ns and its Turn-Off Delay Time is 25.4 ns.
IRFB4620PBF Features
Improved Gate, Avalanche and Dynamic dV/dt Ruggedness
Fully Characterized Capacitance and Avalanche SOA
Enhanced body diode dV/dt and dI/dt Capability
Lead-Free
IRFB4620PBF Applications
High Efficiency Synchronous Rectification in SMPS
Uninterruptible Power Supply
High Speed Power Switching
Hard Switched and High Frequency Circuits
IRFB4620PBF More Descriptions
Single N-Channel 200 V 72.5 mOhm 38 nC HEXFET® Power Mosfet - TO-220-3
200V Single N-Channel HEXFET Power MOSFET in a TO-220AB package, TO220-3, RoHSInfineon SCT
MOSFET, N Ch., 200V, 27A, 70.7 MOHM, 28NC QG, TO-220AB, Pb-Free
Trans MOSFET N-CH 200V 25A 3-Pin(3 Tab) TO-220AB - Rail/Tube
Power Field-Effect Transistor, 25A I(D), 200V, 0.0725ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
MOSFET, N-CH, 200V, TO-220AB; Transistor Polarity:N Channel; Continuous Drain Current Id:25A; Drain Source Voltage Vds:200V; On Resistance Rds(on):60mohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:144W; Operating Temperature Range:-55°C to 175°C; Transistor Case Style:TO-220AB; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:25A; Package / Case:TO-220AB; Power Dissipation Pd:144W; Pulse Current Idm:100A; Termination Type:Through Hole; Voltage Vds Typ:200V; Voltage Vgs Max:20V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:5V; Voltage Vgs th Min:3V
200V Single N-Channel HEXFET Power MOSFET in a TO-220AB package, TO220-3, RoHSInfineon SCT
MOSFET, N Ch., 200V, 27A, 70.7 MOHM, 28NC QG, TO-220AB, Pb-Free
Trans MOSFET N-CH 200V 25A 3-Pin(3 Tab) TO-220AB - Rail/Tube
Power Field-Effect Transistor, 25A I(D), 200V, 0.0725ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
MOSFET, N-CH, 200V, TO-220AB; Transistor Polarity:N Channel; Continuous Drain Current Id:25A; Drain Source Voltage Vds:200V; On Resistance Rds(on):60mohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:144W; Operating Temperature Range:-55°C to 175°C; Transistor Case Style:TO-220AB; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:25A; Package / Case:TO-220AB; Power Dissipation Pd:144W; Pulse Current Idm:100A; Termination Type:Through Hole; Voltage Vds Typ:200V; Voltage Vgs Max:20V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:5V; Voltage Vgs th Min:3V
The three parts on the right have similar specifications to IRFB4620PBF.
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ImagePart NumberManufacturerFactory Lead TimeMountMounting TypePackage / CaseNumber of PinsTransistor Element MaterialOperating TemperaturePackagingSeriesPublishedPart StatusMoisture Sensitivity Level (MSL)Number of TerminationsTerminationECCN CodeResistanceSubcategoryTechnologyNumber of ElementsPower Dissipation-MaxElement ConfigurationOperating ModePower DissipationTurn On Delay TimeFET TypeTransistor ApplicationRds On (Max) @ Id, VgsVgs(th) (Max) @ IdInput Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25°CGate Charge (Qg) (Max) @ VgsRise TimeDrive Voltage (Max Rds On,Min Rds On)Vgs (Max)Fall Time (Typ)Turn-Off Delay TimeContinuous Drain Current (ID)Threshold VoltageJEDEC-95 CodeGate to Source Voltage (Vgs)Drain to Source Breakdown VoltageDual Supply VoltageNominal VgsHeightLengthWidthREACH SVHCRadiation HardeningRoHS StatusLead FreeSupplier Device PackageVoltage - Rated DCCurrent RatingDrain to Source Voltage (Vdss)Input CapacitanceRds On MaxWeightPeak Reflow Temperature (Cel)Time@Peak Reflow Temperature-Max (s)Number of ChannelsCase ConnectionPulsed Drain Current-Max (IDM)Recovery TimeView Compare
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IRFB4620PBF12 WeeksThrough HoleThrough HoleTO-220-33SILICON-55°C~175°C TJTubeHEXFET®2008Active1 (Unlimited)3Through HoleEAR9972.5MOhmFET General Purpose PowerMOSFET (Metal Oxide)1144W TcSingleENHANCEMENT MODE144W13.4 nsN-ChannelSWITCHING72.5m Ω @ 15A, 10V5V @ 100μA1710pF @ 50V25A Tc38nC @ 10V22.4ns10V±20V14.8 ns25.4 ns25A3VTO-220AB20V200V200V3 V9.02mm10.668mm4.826mmNo SVHCNoROHS3 CompliantLead Free-------------- -
-Through HoleThrough HoleTO-220-3---55°C~150°C TJTube-2009Obsolete1 (Unlimited)-----MOSFET (Metal Oxide)-96W Tc----N-Channel-450mOhm @ 5.6A, 10V4V @ 250μA920pF @ 25V9.3A Tc33nC @ 10V25ns10V±30V--9.3A-----------Non-RoHS CompliantContains LeadTO-220AB300V9.3A300V920pF450 mΩ-------
-
12 WeeksThrough HoleThrough HoleTO-220-33--55°C~175°C TJTubeHEXFET®, StrongIRFET™2001Active1 (Unlimited)--EAR99--MOSFET (Metal Oxide)-125W TcSingle--11 nsN-Channel-8.4m Ω @ 46A, 10V3.7V @ 100μA4020pF @ 25V76A Tc109nC @ 10V48ns6V 10V±20V39 ns51 ns76A--20V---16.51mm10.67mm4.83mmNo SVHC-ROHS3 CompliantLead Free---75V--6.000006gNOT SPECIFIEDNOT SPECIFIED1---
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12 WeeksThrough HoleThrough HoleTO-220-33SILICON-55°C~175°C TJTubeHEXFET®2008Active1 (Unlimited)3Through HoleEAR996MOhmFET General Purpose PowerMOSFET (Metal Oxide)1250W TcSingleENHANCEMENT MODE250W20 nsN-ChannelSWITCHING6m Ω @ 75A, 10V4V @ 150μA6860pF @ 50V120A Tc170nC @ 10V60ns10V±20V57 ns55 ns140A4VTO-220AB20V100V100V4 V9.017mm10.668mm4.826mmNo SVHCNoROHS3 CompliantLead Free----------DRAIN560A40 ns
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