Infineon Technologies IRFB4410ZPBF

Name: IRFB4410ZPBF
Brand: Infineon Technologies
SKU: 2483162-IRFB4410ZPBF
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: IRFB4410ZPBF

Manufacturer:: Infineon Technologies

Ventron No:: 2483162-IRFB4410ZPBF

Description:: MOSFET N-CH 100V 97A TO-220AB

ECAD Model:

Datasheet:: IRFB4410ZPBF

Specifications

Infineon Technologies IRFB4410ZPBF technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies IRFB4410ZPBF.

Factory Lead Time
12 Weeks
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-220-3
Number of Pins
3
Transistor Element Material
SILICON
Operating Temperature
-55°C~175°C TJ
Packaging
Tube
Series
HEXFET®
Published
2004
JESD-609 Code
e3
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
Termination
Through Hole
ECCN Code
EAR99
Resistance
9MOhm
Terminal Finish
MATTE TIN OVER NICKEL
Subcategory
FET General Purpose Power
Technology
MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel)
250
Time@Peak Reflow Temperature-Max (s)
30
Number of Elements
1
Number of Channels
1
Power Dissipation-Max
230W Tc
Element Configuration
Single
Operating Mode
ENHANCEMENT MODE
Power Dissipation
230W
Case Connection
DRAIN
Turn On Delay Time
16 ns
FET Type
N-Channel
Transistor Application
SWITCHING
Rds On (Max) @ Id, Vgs
9m Ω @ 58A, 10V
Vgs(th) (Max) @ Id
4V @ 150μA
Input Capacitance (Ciss) (Max) @ Vds
4820pF @ 50V
Current - Continuous Drain (Id) @ 25°C
97A Tc
Gate Charge (Qg) (Max) @ Vgs
120nC @ 10V
Rise Time
52ns
Drive Voltage (Max Rds On,Min Rds On)
10V
Vgs (Max)
±20V
Fall Time (Typ)
57 ns
Turn-Off Delay Time
43 ns
Continuous Drain Current (ID)
96A
Threshold Voltage
2V
JEDEC-95 Code
TO-220AB
Gate to Source Voltage (Vgs)
20V
Drain Current-Max (Abs) (ID)
97A
Drain to Source Breakdown Voltage
100V
Dual Supply Voltage
100V
Avalanche Energy Rating (Eas)
242 mJ
Recovery Time
57 ns
Max Junction Temperature (Tj)
175°C
Nominal Vgs
4 V
Height
19.8mm
Length
10.6426mm
Width
4.82mm
REACH SVHC
No SVHC
Radiation Hardening
No
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free

Description

IRFB4410ZPBF Overview
There is a phenomenon known as "avalanche break down", where avalanche energy is applied to the MOSFET and avalanche energy rating (Eas) is 242 mJ.Input capacitance, CI, is defined as the capacitance between two input terminals of an op amp with one input grounded, and the input capacitance of this device is 4820pF @ 50V.This device has a continuous drain current (ID) of [96A], which is its maximum continuous current.At a given drain-source breakdown voltage, a specified value of ID will flow. With VGS=100V, the drain-source breakdown voltage is 100V.A device's drain current is its maximum continuous current, and this device's drain current is 97A.The turn-off delay time of a device is the time it takes to charge its input capacitance before drain current can flow. The turn-off delay time of a device is 43 ns.During turn-on, the input capacitance of the device is charged before drain current conduction starts, so its delay time is 16 ns.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 20V volts.Electrical devices have threshold voltages at which their operations become active, and this transistor has a threshold voltage of 2V.Its overall power consumption can be reduced by using drive voltage (10V).

IRFB4410ZPBF Features
the avalanche energy rating (Eas) is 242 mJ
a continuous drain current (ID) of 96A
a drain-to-source breakdown voltage of 100V voltage
the turn-off delay time is 43 ns
a threshold voltage of 2V

IRFB4410ZPBF Applications
There are a lot of Infineon Technologies
IRFB4410ZPBF applications of single MOSFETs transistors.

Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit

IRFB4410ZPBF More Descriptions

IRFB4410ZPBF N-channel MOSFET Transistor, 97 A, 100 V, 3-Pin TO-220AB
MOSFET N-CH 100V 97A TO-220AB / Trans MOSFET N-CH Si 100V 97A 3-Pin(3 Tab) TO-220AB Tube
Single N-Channel 100 V 9 mOhm 120 nC HEXFET® Power Mosfet - TO-220-3
100V Single N-Channel HEXFET Power MOSFET in a TO-220AB package, TO220-3, RoHSInfineon SCT
MOSFET Operating temperature: -55...175 °C Housing type: TO-220AB Polarity: N Power dissipation: 230 W
100V 97A 9m´Î@10V58A 230W 4V@150Ã×A N Channel TO-220(TO-220-3) MOSFETs ROHS
Power Field-Effect Transistor, 97A I(D), 100V, 0.009ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
Benefits: RoHS Compliant | Target Applications: AC-DC; Battery Operated Drive; Consumer Full-Bridge; Full-Bridge; Push-Pull
MOSFET, N, 100V, TO-220AB; Transistor Polarity:N Channel; Continuous Drain Current Id:97A; Drain Source Voltage Vds:100V; On Resistance Rds(on):9mohm; Rds(on) Test Voltage Vgs:20V; Threshold Voltage Vgs Typ:4V; Power Dissipation Pd:230W; Transistor Case Style:TO-220AB; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Base Number:4410; Current Id Max:96A; N-channel Gate Charge:83nC; Package / Case:TO-220AB; Power Dissipation Pd:230W; Power Dissipation Pd:230mW; Pulse Current Idm:390A; Termination Type:Through Hole; Voltage Vds Typ:100V; Voltage Vgs Max:4V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:4V; Voltage Vgs th Min:2V

Product Comparison

The three parts on the right have similar specifications to IRFB4410ZPBF.

Image

Part Number

Manufacturer

Factory Lead Time

Mount

Mounting Type

Package / Case

Number of Pins

Transistor Element Material

Operating Temperature

Packaging

Series

Published

JESD-609 Code

Part Status

Moisture Sensitivity Level (MSL)

Number of Terminations

Termination

ECCN Code

Resistance

Terminal Finish

Subcategory

Technology

Peak Reflow Temperature (Cel)

Time@Peak Reflow Temperature-Max (s)

Number of Elements

Number of Channels

Power Dissipation-Max

Element Configuration

Operating Mode

Power Dissipation

Case Connection

Turn On Delay Time

FET Type

Transistor Application

Rds On (Max) @ Id, Vgs

Vgs(th) (Max) @ Id

Input Capacitance (Ciss) (Max) @ Vds

Current - Continuous Drain (Id) @ 25°C

Gate Charge (Qg) (Max) @ Vgs

Rise Time

Drive Voltage (Max Rds On,Min Rds On)

Vgs (Max)

Fall Time (Typ)

Turn-Off Delay Time

Continuous Drain Current (ID)

Threshold Voltage

JEDEC-95 Code

Gate to Source Voltage (Vgs)

Drain Current-Max (Abs) (ID)

Drain to Source Breakdown Voltage

Dual Supply Voltage

Avalanche Energy Rating (Eas)

Recovery Time

Max Junction Temperature (Tj)

Nominal Vgs

Height

Length

Width

REACH SVHC

Radiation Hardening

RoHS Status

Lead Free

Surface Mount

Terminal Position

JESD-30 Code

Qualification Status

Configuration

Drain to Source Voltage (Vdss)

Drain-source On Resistance-Max

Pulsed Drain Current-Max (IDM)

DS Breakdown Voltage-Min

Supplier Device Package

Weight

Max Operating Temperature

Min Operating Temperature

Voltage - Rated DC

Current Rating

Input Capacitance

Drain to Source Resistance

Rds On Max

Contact Plating

View Compare
IRFB4410ZPBF

Infineon Technologies

12 Weeks

Through Hole

Through Hole

TO-220-3

3

SILICON

-55°C~175°C TJ

Tube

HEXFET®

2004

e3

Active

1 (Unlimited)

3

Through Hole

EAR99

9MOhm

MATTE TIN OVER NICKEL

FET General Purpose Power

MOSFET (Metal Oxide)

250

30

1

1

230W Tc

Single

ENHANCEMENT MODE

230W

DRAIN

16 ns

N-Channel

SWITCHING

9m Ω @ 58A, 10V

4V @ 150μA

4820pF @ 50V

97A Tc

120nC @ 10V

52ns

10V

±20V

57 ns

43 ns

96A

2V

TO-220AB

20V

97A

100V

100V

242 mJ

57 ns

175°C

4 V

19.8mm

10.6426mm

4.82mm

No SVHC

No

ROHS3 Compliant

Lead Free

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-
IRFBA1404P

Infineon Technologies

-

-

Through Hole

TO-273AA

-

SILICON

-40°C~175°C TJ

Tube

HEXFET®

2010

-

Obsolete

1 (Unlimited)

3

-

EAR99

-

-

-

MOSFET (Metal Oxide)

NOT SPECIFIED

NOT SPECIFIED

1

-

300W Tc

-

ENHANCEMENT MODE

-

DRAIN

-

N-Channel

SWITCHING

3.7m Ω @ 95A, 10V

4V @ 250μA

7360pF @ 25V

206A Tc

200nC @ 10V

-

10V

±20V

-

-

-

-

-

-

95A

-

-

-

-

-

-

-

-

-

-

-

Non-RoHS Compliant

-

NO

SINGLE

R-PSIP-T3

Not Qualified

SINGLE WITH BUILT-IN DIODE

40V

0.0037Ohm

650A

40V

-

-

-

-

-

-

-

-

-

-

IRFB4410ZPBF vs IRFBA1404P
IRFB16N50KPBF

Vishay Siliconix

-

Through Hole

Through Hole

TO-220-3

3

-

-55°C~150°C TJ

Tube

-

2004

-

Obsolete

1 (Unlimited)

-

-

-

-

-

-

MOSFET (Metal Oxide)

-

-

-

1

280W Tc

Single

-

280W

-

20 ns

N-Channel

-

350mOhm @ 10A, 10V

5V @ 250μA

2210pF @ 25V

17A Tc

89nC @ 10V

77ns

10V

±30V

30 ns

38 ns

17A

-

-

30V

-

500V

-

-

-

-

-

9.01mm

10.41mm

4.7mm

-

-

ROHS3 Compliant

Lead Free

-

-

-

-

-

500V

-

-

-

TO-220AB

6.000006g

150°C

-55°C

500V

17A

2.21nF

350mOhm

350 mΩ

-

IRFB4410ZPBF vs IRFB16N50KPBF
IRFB23N20DPBF

Infineon Technologies

14 Weeks

Through Hole

Through Hole

TO-220-3

3

SILICON

-55°C~175°C TJ

Tube

HEXFET®

2000

-

Not For New Designs

1 (Unlimited)

3

Through Hole

EAR99

100MOhm

-

FET General Purpose Power

MOSFET (Metal Oxide)

-

-

1

-

3.8W Ta 170W Tc

Single

ENHANCEMENT MODE

170W

DRAIN

14 ns

N-Channel

SWITCHING

100m Ω @ 14A, 10V

5.5V @ 250μA

1960pF @ 25V

24A Tc

86nC @ 10V

32ns

10V

±30V

16 ns

26 ns

24A

5.5V

TO-220AB

30V

-

200V

200V

250 mJ

-

-

5.5 V

4.69mm

10.54mm

4.699mm

No SVHC

No

ROHS3 Compliant

Contains Lead, Lead Free

-

-

-

-

-

-

-

96A

-

-

-

-

-

200V

24A

-

-

-

Tin

IRFB4410ZPBF vs IRFB23N20DPBF

Certification

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IRFB4410ZPBF Specification

Part Number	Manufacturers	Description	Stock	Price
IRFB4410ZPBF DISTI #	Infineon Technologies AG	MOSFET N-CH 100V 97A TO-220AB RoHS: Compliant	2146	1 $1.91 50 $1.5452 100 $1.3632 500 $1.0773 1000 $0.86941
IRFB4410ZPBF DISTI #	Infineon Technologies AG	Trans MOSFET N-CH Si 100V 97A 3-Pin(3 Tab) TO-220A	5120	20 $0.635 200 $0.6338
IRFB4410ZPBF DISTI #	Infineon Technologies AG	Trans MOSFET N-CH Si 100V 97A 3-Pin(3 Tab) TO-220A	600	8 $3.2767 10 $1.6703 50 $1.3642 100 $1.1615 200 $1.1054
IRFB4410ZPBF DISTI #	Infineon Technologies AG	Trans MOSFET N-CH 100V 97A 3-Pin(3 Tab) TO-220AB ( RoHS: Compliant	3050	1000 $0.73507 2000 $0.70486 3000 $0.69534 5000 $0.66825 10000 $0.65968 25000 $0.64319 50000 $0.6275
IRFB4410ZPBF DISTI #	Infineon Technologies AG	Trans MOSFET N-CH 100V 97A 3-Pin(3 Tab) TO-220AB ( RoHS: Compliant	7150	1 $1.0319 10 $0.9169 25 $0.8259 50 $0.7499 100 $0.6879 500 $0.6349 1000 $0.5899
IRFB4410ZPBF DISTI #	Infineon Technologies AG	Trans MOSFET N-CH 100V 97A 3-Pin(3 Tab) TO-220AB - RoHS: Compliant	0	700 $0.5439 800 $0.5249 1500 $0.5059 3500 $0.4889 7000 $0.4799
IRFB4410ZPBF DISTI #	Infineon Technologies AG	MOSFET Transistor, N Channel, 97 A, 100 V, 0.008 o	2531	1 $1.91 10 $1.64 100 $1.29 500 $1.16 1000 $0.943 2500 $0.894
IRFB4410ZPBF DISTI #	Infineon Technologies AG	MOSFET, N Ch., 100V, 97A, 9 MOHM, 83 NCQG, T RoHS: Compliant	2394	1 $2.808 10 $2.478 100 $2.16 500 $1.872 1000 $1.652
IRFB4410ZPBF DISTI #	Infineon Technologies AG	Single N-Channel 100 V 9 mOhm 120 nC HEXFET Power RoHS: Compliant	5856	15 $0.755 150 $0.685 750 $0.595
IRFB4410ZPBF DISTI #	Infineon Technologies AG	MOSFET MOSFT 100V 97A 9mOhm 83nC Qg RoHS: Compliant	1064	1 $1.56 10 $1.33 100 $1.02 500 $0.898 1000 $0.709 2500 $0.629
IRFB4410ZPBF DISTI #	International Rectifier	75 A, 100 V, 0.009 ohm, N-CHANNEL, Si, POWER, MOSF	4	1 $2.25 3 $1.875
IRFB4410ZPBF DISTI #	Infineon Technologies AG	MOSFET N-CHANNEL 100V 97A HEXFET TO220AB, TU	692	10 $1.37 20 $1.33 40 $1.285 100 $1.105
IRFB4410ZPBF DISTI #	Infineon Technologies AG	MOSFET N-CHANNEL 100V 97A HEXFET TO220AB, PK	64	2 $2.44 10 $1.37 20 $1.33 40 $1.285 100 $1.105
IRFB4410ZPBF DISTI #	Infineon Technologies AG	Transistor: N-MOSFET, unipolar, 100V, 97A, 230	771	1 $1.5 3 $1.38 10 $1.13 50 $0.96
IRFB4410ZPBF DISTI #	Infineon Technologies AG	N-Ch 100V 97A 230W 0,009R TO220AB RoHS: Compliant	980	10 $1.02 50 $0.7185 200 $0.6585 500 $0.6345
IRFB4410ZPBF DISTI #	Infineon Technologies AG	INSTOCK	123
IRFB4410ZPBF DISTI #	INFINEON/IR	TO-220AB RoHS: Compliant	8640	1100 $0.6429 8640 $0.6
IRFB4410ZPBF DISTI #	Infineon Technologies AG	100V,9m,97A,N-Channel Power MOSFET	100	1 $1.75 100 $1.46 500 $1.29 1000 $1.26
IRFB4410ZPBF DISTI #	Infineon Technologies AG	MOSFET, N, 100V, TO-220AB RoHS: Compliant	2685	5 $1.13 25 $1.03 100 $0.787 250 $0.74 500 $0.693
IRFB4410ZPBF DISTI #	Infineon Technologies AG	MOSFET, N, 100V, TO-220AB RoHS: Compliant	2525	1 $2.47 10 $2.1 100 $1.62 500 $1.42 1000 $1.18
IRFB4410ZPBF DISTI #	Infineon Technologies AG	MOSFETs RoHS: Compliant	600	1 $2.57 10 $1.31 50 $1.07 100 $0.911 200 $0.867
IRFB4410ZPBF DISTI #	Infineon Technologies AG	MOSFETs RoHS: Compliant	5127	5 $1.77 25 $1.43 100 $1.18 500 $1.08 1000 $0.83 2000 $0.77

IRFB441~~(8)~~
IRFB44~~(8)~~
IRFB4~~(58)~~
IRFB~~(57)~~
IRF~~(69)~~

Infineon Technologies IRFB4410ZPBF

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