Infineon Technologies IRFB4410PBF
- Part Number:
- IRFB4410PBF
- Manufacturer:
- Infineon Technologies
- Ventron No:
- 2480013-IRFB4410PBF
- Description:
- MOSFET N-CH 100V 96A TO-220AB
- ECAD Model:
-
- Datasheet:
- IRFB4410PBF
Infineon Technologies IRFB4410PBF technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies IRFB4410PBF.
- Factory Lead Time12 Weeks
- MountThrough Hole
- Mounting TypeThrough Hole
- Package / CaseTO-220-3
- Number of Pins3
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~175°C TJ
- PackagingTube
- SeriesHEXFET®
- Published2004
- JESD-609 Codee3
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- ECCN CodeEAR99
- Resistance10mOhm
- Terminal FinishMATTE TIN OVER NICKEL
- SubcategoryFET General Purpose Power
- Voltage - Rated DC100V
- TechnologyMOSFET (Metal Oxide)
- Peak Reflow Temperature (Cel)250
- Current Rating96A
- Time@Peak Reflow Temperature-Max (s)30
- Lead Pitch2.54mm
- Number of Elements1
- Power Dissipation-Max200W Tc
- Element ConfigurationSingle
- Operating ModeENHANCEMENT MODE
- Power Dissipation250W
- Turn On Delay Time24 ns
- FET TypeN-Channel
- Transistor ApplicationSWITCHING
- Rds On (Max) @ Id, Vgs10m Ω @ 58A, 10V
- Vgs(th) (Max) @ Id4V @ 150μA
- Input Capacitance (Ciss) (Max) @ Vds5150pF @ 50V
- Current - Continuous Drain (Id) @ 25°C88A Tc
- Gate Charge (Qg) (Max) @ Vgs180nC @ 10V
- Rise Time80ns
- Drive Voltage (Max Rds On,Min Rds On)10V
- Vgs (Max)±20V
- Fall Time (Typ)50 ns
- Turn-Off Delay Time55 ns
- Reverse Recovery Time38 ns
- Continuous Drain Current (ID)88A
- Threshold Voltage4V
- JEDEC-95 CodeTO-220AB
- Gate to Source Voltage (Vgs)20V
- Drain Current-Max (Abs) (ID)75A
- Drain to Source Breakdown Voltage100V
- Dual Supply Voltage100V
- Avalanche Energy Rating (Eas)220 mJ
- Nominal Vgs4 V
- Height9.017mm
- Length10.6426mm
- Width4.82mm
- REACH SVHCNo SVHC
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
Description
The IRFB4410PBF is a HEXFET? single N-channel Power MOSFET that offers improved gate, avalanche and dynamic dV/dt ruggedness. It is suitable for high-efficiency synchronous rectification in SMPS, hard switched and high-frequency circuits.
Features
Enhanced body diode dV/dt and dI/dt Capability
Lead-Free
Improved Gate, Avalanche and Dynamic dV/dt Ruggedness
Fully Characterized Capacitance and Avalanche SOA
Fast switching
Applications
High-Speed Power Switching
Hard Switched and High-Frequency Circuits
High-Efficiency Synchronous Rectification in SMPS
Uninterruptible Power Supply
Power Management
Industrial
The IRFB4410PBF is a HEXFET? single N-channel Power MOSFET that offers improved gate, avalanche and dynamic dV/dt ruggedness. It is suitable for high-efficiency synchronous rectification in SMPS, hard switched and high-frequency circuits.
Features
Enhanced body diode dV/dt and dI/dt Capability
Lead-Free
Improved Gate, Avalanche and Dynamic dV/dt Ruggedness
Fully Characterized Capacitance and Avalanche SOA
Fast switching
Applications
High-Speed Power Switching
Hard Switched and High-Frequency Circuits
High-Efficiency Synchronous Rectification in SMPS
Uninterruptible Power Supply
Power Management
Industrial
IRFB4410PBF More Descriptions
MOSFET, Power;N-Ch;VDSS 100V;RDS(ON) 8 Milliohms;ID 88A;TO-220AB;PD 200W;VF 1.3V
Single N-Channel 100 V 10 mOhm 120 nC HEXFET® Power Mosfet - TO-220-3
INFINEON THT MOSFET NFET 100V 88A 10mΩ 175°C TO-220 IRFB4410PBF
100V Single N-Channel HEXFET Power MOSFET in a TO-220AB package, TO220-3, RoHSInfineon SCT
Trans MOSFET N-CH 100V 88A 3-Pin(3 Tab) TO-220AB Tube
Multilayer Ceramic Capacitors MLCC - SMD/SMT 1210 8200pF 630volts U2J /-5%
Power Field-Effect Transistor, 75A I(D), 100V, 0.01ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
Benefits: RoHS Compliant; Industry-leading quality; Fast Switching; 175C Operating Temperature | Target Applications: AC-DC
Transistor Polarity:n Channel; Drain Source Voltage Vds:100V; Continuous Drain Current Id:96A; On Resistance Rds(On):0.008Ohm; Transistor Mounting:through Hole; Rds(On) Test Voltage Vgs:20V; Threshold Voltage Vgs:4V; Product Range:- Rohs Compliant: Yes
MOSFET, N, 100V, TO-220; Transistor Polarity:N Channel; Continuous Drain Current Id:96A; Drain Source Voltage Vds:100V; On Resistance Rds(on):10mohm; Rds(on) Test Voltage Vgs:20V; Threshold Voltage Vgs Typ:4V; Power Dissipation Pd:250W; Transistor Case Style:TO-220; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Alternate Case Style:SOT-78B; Avalanche Single Pulse Energy Eas:220mJ; Capacitance Ciss Typ:5150pF; Current Id Max:88A; Current Temperature:25°C; Full Power Rating Temperature:25°C; Lead Spacing:2.54mm; No. of Transistors:1; On State resistance @ Vgs = 10V:10mohm; Package / Case:TO-220; Pin Configuration:a; Pin Format:1G, (2 Tab)D, 3S; Power Dissipation Pd:250W; Power Dissipation Pd:250W; Power Dissipation Ptot Max:250W; Pulse Current Idm:380A; Reverse Recovery Time trr Typ:38ns; Termination Type:Through Hole; Voltage Vds Typ:100V; Voltage Vgs Max:4V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:4V; Voltage Vgs th Min:2V
Single N-Channel 100 V 10 mOhm 120 nC HEXFET® Power Mosfet - TO-220-3
INFINEON THT MOSFET NFET 100V 88A 10mΩ 175°C TO-220 IRFB4410PBF
100V Single N-Channel HEXFET Power MOSFET in a TO-220AB package, TO220-3, RoHSInfineon SCT
Trans MOSFET N-CH 100V 88A 3-Pin(3 Tab) TO-220AB Tube
Multilayer Ceramic Capacitors MLCC - SMD/SMT 1210 8200pF 630volts U2J /-5%
Power Field-Effect Transistor, 75A I(D), 100V, 0.01ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
Benefits: RoHS Compliant; Industry-leading quality; Fast Switching; 175C Operating Temperature | Target Applications: AC-DC
Transistor Polarity:n Channel; Drain Source Voltage Vds:100V; Continuous Drain Current Id:96A; On Resistance Rds(On):0.008Ohm; Transistor Mounting:through Hole; Rds(On) Test Voltage Vgs:20V; Threshold Voltage Vgs:4V; Product Range:- Rohs Compliant: Yes
MOSFET, N, 100V, TO-220; Transistor Polarity:N Channel; Continuous Drain Current Id:96A; Drain Source Voltage Vds:100V; On Resistance Rds(on):10mohm; Rds(on) Test Voltage Vgs:20V; Threshold Voltage Vgs Typ:4V; Power Dissipation Pd:250W; Transistor Case Style:TO-220; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Alternate Case Style:SOT-78B; Avalanche Single Pulse Energy Eas:220mJ; Capacitance Ciss Typ:5150pF; Current Id Max:88A; Current Temperature:25°C; Full Power Rating Temperature:25°C; Lead Spacing:2.54mm; No. of Transistors:1; On State resistance @ Vgs = 10V:10mohm; Package / Case:TO-220; Pin Configuration:a; Pin Format:1G, (2 Tab)D, 3S; Power Dissipation Pd:250W; Power Dissipation Pd:250W; Power Dissipation Ptot Max:250W; Pulse Current Idm:380A; Reverse Recovery Time trr Typ:38ns; Termination Type:Through Hole; Voltage Vds Typ:100V; Voltage Vgs Max:4V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:4V; Voltage Vgs th Min:2V
The three parts on the right have similar specifications to IRFB4410PBF.
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ImagePart NumberManufacturerFactory Lead TimeMountMounting TypePackage / CaseNumber of PinsTransistor Element MaterialOperating TemperaturePackagingSeriesPublishedJESD-609 CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeResistanceTerminal FinishSubcategoryVoltage - Rated DCTechnologyPeak Reflow Temperature (Cel)Current RatingTime@Peak Reflow Temperature-Max (s)Lead PitchNumber of ElementsPower Dissipation-MaxElement ConfigurationOperating ModePower DissipationTurn On Delay TimeFET TypeTransistor ApplicationRds On (Max) @ Id, VgsVgs(th) (Max) @ IdInput Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25°CGate Charge (Qg) (Max) @ VgsRise TimeDrive Voltage (Max Rds On,Min Rds On)Vgs (Max)Fall Time (Typ)Turn-Off Delay TimeReverse Recovery TimeContinuous Drain Current (ID)Threshold VoltageJEDEC-95 CodeGate to Source Voltage (Vgs)Drain Current-Max (Abs) (ID)Drain to Source Breakdown VoltageDual Supply VoltageAvalanche Energy Rating (Eas)Nominal VgsHeightLengthWidthREACH SVHCRadiation HardeningRoHS StatusLead FreeSurface MountTerminal PositionJESD-30 CodeQualification StatusConfigurationCase ConnectionDrain to Source Voltage (Vdss)Drain-source On Resistance-MaxPulsed Drain Current-Max (IDM)DS Breakdown Voltage-MinContact PlatingSupplier Device PackageTerminationMax Operating TemperatureMin Operating TemperatureInput CapacitanceDrain to Source ResistanceRds On MaxRecovery TimeView Compare
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IRFB4410PBF12 WeeksThrough HoleThrough HoleTO-220-33SILICON-55°C~175°C TJTubeHEXFET®2004e3Active1 (Unlimited)3EAR9910mOhmMATTE TIN OVER NICKELFET General Purpose Power100VMOSFET (Metal Oxide)25096A302.54mm1200W TcSingleENHANCEMENT MODE250W24 nsN-ChannelSWITCHING10m Ω @ 58A, 10V4V @ 150μA5150pF @ 50V88A Tc180nC @ 10V80ns10V±20V50 ns55 ns38 ns88A4VTO-220AB20V75A100V100V220 mJ4 V9.017mm10.6426mm4.82mmNo SVHCNoROHS3 CompliantLead Free-------------------- -
--Through HoleTO-273AA-SILICON-40°C~175°C TJTubeHEXFET®2010-Obsolete1 (Unlimited)3EAR99----MOSFET (Metal Oxide)NOT SPECIFIED-NOT SPECIFIED-1300W Tc-ENHANCEMENT MODE--N-ChannelSWITCHING3.7m Ω @ 95A, 10V4V @ 250μA7360pF @ 25V206A Tc200nC @ 10V-10V±20V-------95A---------Non-RoHS Compliant-NOSINGLER-PSIP-T3Not QualifiedSINGLE WITH BUILT-IN DIODEDRAIN40V0.0037Ohm650A40V---------
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12 WeeksThrough HoleThrough HoleTO-220-33--55°C~175°C TJTube-2007-Active1 (Unlimited)--72.5MOhm---MOSFET (Metal Oxide)----1144W TcSingle-144W8.6 nsN-Channel-72.5mOhm @ 15A, 10V5V @ 100μA1710pF @ 50V25A Tc38nC @ 10V14.6ns10V±20V9.9 ns17.1 ns-25A5V-20V-200V200V-5 V9.02mm10.668mm4.826mmNo SVHCNoROHS3 CompliantLead Free------200V---TinTO-220ABThrough Hole175°C-55°C1.71nF72.5mOhm72.5 mΩ-
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12 WeeksThrough HoleThrough HoleTO-220-33SILICON-55°C~175°C TJTubeHEXFET®2008-Active1 (Unlimited)3EAR996MOhm-FET General Purpose Power-MOSFET (Metal Oxide)----1250W TcSingleENHANCEMENT MODE250W20 nsN-ChannelSWITCHING6m Ω @ 75A, 10V4V @ 150μA6860pF @ 50V120A Tc170nC @ 10V60ns10V±20V57 ns55 ns-140A4VTO-220AB20V-100V100V-4 V9.017mm10.668mm4.826mmNo SVHCNoROHS3 CompliantLead Free-----DRAIN--560A---Through Hole-----40 ns
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