Infineon Technologies IRFB4332PBF

Name: IRFB4332PBF
Brand: Infineon Technologies
SKU: 2484908-IRFB4332PBF
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: IRFB4332PBF

Manufacturer:: Infineon Technologies

Ventron No:: 2484908-IRFB4332PBF

Description:: MOSFET N-CH 250V 60A TO-220AB

ECAD Model:

Datasheet:: IRFB4332PBF

Specifications

Infineon Technologies IRFB4332PBF technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies IRFB4332PBF.

Factory Lead Time
12 Weeks
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-220-3
Number of Pins
3
Transistor Element Material
SILICON
Operating Temperature
-40°C~175°C TJ
Packaging
Tube
Series
HEXFET®
Published
2008
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
Termination
Through Hole
ECCN Code
EAR99
Resistance
33MOhm
Subcategory
FET General Purpose Power
Voltage - Rated DC
250V
Technology
MOSFET (Metal Oxide)
Current Rating
60A
Number of Elements
1
Number of Channels
1
Power Dissipation-Max
390W Tc
Element Configuration
Single
Operating Mode
ENHANCEMENT MODE
Power Dissipation
390W
Case Connection
DRAIN
FET Type
N-Channel
Transistor Application
SWITCHING
Rds On (Max) @ Id, Vgs
33m Ω @ 35A, 10V
Vgs(th) (Max) @ Id
5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds
5860pF @ 25V
Current - Continuous Drain (Id) @ 25°C
60A Tc
Gate Charge (Qg) (Max) @ Vgs
150nC @ 10V
Drive Voltage (Max Rds On,Min Rds On)
10V
Vgs (Max)
±30V
Continuous Drain Current (ID)
60A
Threshold Voltage
5V
JEDEC-95 Code
TO-220AB
Gate to Source Voltage (Vgs)
30V
Drain to Source Breakdown Voltage
250V
Dual Supply Voltage
250V
Recovery Time
290 ns
Max Junction Temperature (Tj)
175°C
Nominal Vgs
5 V
Height
19.8mm
Length
10.66mm
Width
4.82mm
REACH SVHC
No SVHC
Radiation Hardening
No
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free

Description

IRFB4332PBF Overview
Input capacitance, CI, is defined as the capacitance between two input terminals of an op amp with one input grounded, and the input capacitance of this device is 5860pF @ 25V.This device has a continuous drain current (ID) of [60A], which is its maximum continuous current.At a given drain-source breakdown voltage, a specified value of ID will flow. With VGS=250V, the drain-source breakdown voltage is 250V.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 30V volts.Electrical devices have threshold voltages at which their operations become active, and this transistor has a threshold voltage of 5V.Its overall power consumption can be reduced by using drive voltage (10V).

IRFB4332PBF Features
a continuous drain current (ID) of 60A
a drain-to-source breakdown voltage of 250V voltage
a threshold voltage of 5V

IRFB4332PBF Applications
There are a lot of Infineon Technologies
IRFB4332PBF applications of single MOSFETs transistors.

Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit

IRFB4332PBF More Descriptions

IRFB4332PBF N-channel MOSFET Transistor, 60 A, 250 V, 3-Pin TO-220AB
Single N-Channel 250 V 33 mOhm 99 nC HEXFET® Power Mosfet - TO-220-3
Trans Mosfet N-Ch 250V 60A 3-Pin(3 Tab) To-220Ab Rohs Compliant: Yes
Power Field-Effect Transistor, 60A I(D), 250V, 0.033ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
MOSFET, N, 250V, TO-220AB; Transistor Polarity:N Channel; Continuous Drain Current Id:60A; Drain Source Voltage Vds:250V; On Resistance Rds(on):33mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:5V; Power Dissipation Pd:390W; Transistor Case Style:TO-220AB; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Base Number:4332; Current Id Max:60A; N-channel Gate Charge:99nC; Package / Case:TO-220AB; Power Dissipation Pd:390W; Power Dissipation Pd:390mW; Pulse Current Idm:230A; Termination Type:Through Hole; Voltage Vds Typ:250V; Voltage Vgs Max:5V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:5V; Voltage Vgs th Min:3V

Product Comparison

The three parts on the right have similar specifications to IRFB4332PBF.

Image

Part Number

Manufacturer

Factory Lead Time

Mount

Mounting Type

Package / Case

Number of Pins

Transistor Element Material

Operating Temperature

Packaging

Series

Published

Part Status

Moisture Sensitivity Level (MSL)

Number of Terminations

Termination

ECCN Code

Resistance

Subcategory

Voltage - Rated DC

Technology

Current Rating

Number of Elements

Number of Channels

Power Dissipation-Max

Element Configuration

Operating Mode

Power Dissipation

Case Connection

FET Type

Transistor Application

Rds On (Max) @ Id, Vgs

Vgs(th) (Max) @ Id

Input Capacitance (Ciss) (Max) @ Vds

Current - Continuous Drain (Id) @ 25°C

Gate Charge (Qg) (Max) @ Vgs

Drive Voltage (Max Rds On,Min Rds On)

Vgs (Max)

Continuous Drain Current (ID)

Threshold Voltage

JEDEC-95 Code

Gate to Source Voltage (Vgs)

Drain to Source Breakdown Voltage

Dual Supply Voltage

Recovery Time

Max Junction Temperature (Tj)

Nominal Vgs

Height

Length

Width

REACH SVHC

Radiation Hardening

RoHS Status

Lead Free

Contact Plating

Supplier Device Package

Max Operating Temperature

Min Operating Temperature

Turn On Delay Time

Rise Time

Drain to Source Voltage (Vdss)

Fall Time (Typ)

Turn-Off Delay Time

Input Capacitance

Drain to Source Resistance

Rds On Max

Pulsed Drain Current-Max (IDM)

Avalanche Energy Rating (Eas)

View Compare
IRFB4332PBF

Infineon Technologies

12 Weeks

Through Hole

Through Hole

TO-220-3

3

SILICON

-40°C~175°C TJ

Tube

HEXFET®

2008

Active

1 (Unlimited)

3

Through Hole

EAR99

33MOhm

FET General Purpose Power

250V

MOSFET (Metal Oxide)

60A

1

1

390W Tc

Single

ENHANCEMENT MODE

390W

DRAIN

N-Channel

SWITCHING

33m Ω @ 35A, 10V

5V @ 250μA

5860pF @ 25V

60A Tc

150nC @ 10V

10V

±30V

60A

5V

TO-220AB

30V

250V

250V

290 ns

175°C

5 V

19.8mm

10.66mm

4.82mm

No SVHC

No

ROHS3 Compliant

Lead Free

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-
IRFB5620PBF

Infineon Technologies

12 Weeks

Through Hole

Through Hole

TO-220-3

3

-

-55°C~175°C TJ

Tube

-

2007

Active

1 (Unlimited)

-

Through Hole

-

72.5MOhm

-

-

MOSFET (Metal Oxide)

-

1

-

144W Tc

Single

-

144W

-

N-Channel

-

72.5mOhm @ 15A, 10V

5V @ 100μA

1710pF @ 50V

25A Tc

38nC @ 10V

10V

±20V

25A

5V

-

20V

200V

200V

-

-

5 V

9.02mm

10.668mm

4.826mm

No SVHC

No

ROHS3 Compliant

Lead Free

Tin

TO-220AB

175°C

-55°C

8.6 ns

14.6ns

200V

9.9 ns

17.1 ns

1.71nF

72.5mOhm

72.5 mΩ

-

-

IRFB4332PBF vs IRFB5620PBF
IRFB4310ZPBF

Infineon Technologies

12 Weeks

Through Hole

Through Hole

TO-220-3

3

SILICON

-55°C~175°C TJ

Tube

HEXFET®

2008

Active

1 (Unlimited)

3

Through Hole

EAR99

6MOhm

FET General Purpose Power

-

MOSFET (Metal Oxide)

-

1

-

250W Tc

Single

ENHANCEMENT MODE

250W

DRAIN

N-Channel

SWITCHING

6m Ω @ 75A, 10V

4V @ 150μA

6860pF @ 50V

120A Tc

170nC @ 10V

10V

±20V

140A

4V

TO-220AB

20V

100V

100V

40 ns

-

4 V

9.017mm

10.668mm

4.826mm

No SVHC

No

ROHS3 Compliant

Lead Free

-

-

-

-

20 ns

60ns

-

57 ns

55 ns

-

-

-

560A

-

IRFB4332PBF vs IRFB4310ZPBF
IRFB23N20DPBF

Infineon Technologies

14 Weeks

Through Hole

Through Hole

TO-220-3

3

SILICON

-55°C~175°C TJ

Tube

HEXFET®

2000

Not For New Designs

1 (Unlimited)

3

Through Hole

EAR99

100MOhm

FET General Purpose Power

200V

MOSFET (Metal Oxide)

24A

1

-

3.8W Ta 170W Tc

Single

ENHANCEMENT MODE

170W

DRAIN

N-Channel

SWITCHING

100m Ω @ 14A, 10V

5.5V @ 250μA

1960pF @ 25V

24A Tc

86nC @ 10V

10V

±30V

24A

5.5V

TO-220AB

30V

200V

200V

-

-

5.5 V

4.69mm

10.54mm

4.699mm

No SVHC

No

ROHS3 Compliant

Contains Lead, Lead Free

Tin

-

-

-

14 ns

32ns

-

16 ns

26 ns

-

-

-

96A

250 mJ

IRFB4332PBF vs IRFB23N20DPBF

Certification

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IRFB4332PBF Specification

Part Number	Manufacturers	Description	Stock	Price
IRFB4332PBF DISTI #	Infineon Technologies AG	Trans MOSFET N-CH 250V 60A 3-Pin(3 Tab) TO-220AB T RoHS: Compliant	890	1 $3.032 10 $2.641 25 $2.217 100 $2.013
IRFB4332PBF DISTI #	Infineon Technologies AG	MOSFET N-CH 250V 60A TO-220AB RoHS: Compliant	839	1 $4.39 50 $3.5268 100 $3.2134 500 $2.60206 1000 $2.1945
IRFB4332PBF DISTI #	Infineon Technologies AG	Trans MOSFET N-CH 250V 60A 3-Pin(3 Tab) TO-220AB - RoHS: Compliant	1802	1 $1.59 10 $1.59 25 $1.59 50 $1.49 100 $1.49 500 $1.39 1000 $1.39
IRFB4332PBF DISTI #	Infineon Technologies AG	Trans MOSFET N-CH 250V 60A 3-Pin(3 Tab) TO-220AB ( RoHS: Compliant	9994	1 $3.19 10 $2.89 25 $2.69 50 $2.69 100 $2.69 500 $2.69 1000 $2.69
IRFB4332PBF DISTI #	Infineon Technologies AG	Trans MOSFET N-CH 250V 60A 3-Pin(3 Tab) TO-220AB ( RoHS: Compliant	0
IRFB4332PBF DISTI #	Infineon Technologies AG	MOSFET, N, 250V, TO-220AB, Transistor Polarity:N	1130	1 $3.78 10 $3.21 100 $2.78 500 $2.37
IRFB4332PBF. DISTI #	Infineon Technologies AG	TRANS MOSFET N-CH 250V 60A 3-PIN(3 TAB) TO-220AB R	0	1 $3.78 10 $3.21 100 $2.78 500 $2.37
IRFB4332PBF DISTI #	Infineon Technologies AG	MOSFET, N Ch., 250V, 60A, 33 MOHM, 99 NC QG, RoHS: Compliant	0	250 $4.301
IRFB4332PBF DISTI #	Infineon Technologies AG	MOSFET MOSFT 250V 60A 33mOhm 99nC Qg RoHS: Compliant	0	1 $3.78 10 $3.21 100 $2.78 250 $2.64 500 $2.37
IRFB4332PBF DISTI #	International Rectifier	60A, 250V, 0.033OHM, N-CHANNEL, SI, POWER, MOSFET,	7	1 $3.45 4 $2.3
IRFB4332PBF DISTI #	Infineon Technologies AG	MOSFET N-CHANNEL 250V 60A HEXFET TO220AB, EA	198	1 $2.93 10 $1.92 25 $1.76
IRFB4332PBF DISTI #	Infineon Technologies AG	Transistor: N-MOSFET, unipolar, 250V, 60A, 390	121	1 $2.53 3 $2.32 10 $1.88 100 $1.6
IRFB4332PBF DISTI #	Infineon Technologies AG	N-Ch 250V 60A 390W 0,033R TO220AB RoHS: Compliant	480	10 $1.6 50 $1.3 200 $1.18 500 $1.14
IRFB4332PBF DISTI #	Infineon Technologies AG	N-CH 250V 60A 33mOhm TO220-3 RoHS: Compliant	3000	50 $1.94 150 $1.84 250 $1.72 450 $1.55 950 $1.49
IRFB4332PBF DISTI #	INF	RoHS: Compliant	792	350 $2.47 792 $2.26
IRFB4332PBF DISTI #	International Rectifier	INSTOCK	309
IRFB4332PBF DISTI #	Infineon Technologies AG	MOSFET, N, 250V, TO-220AB RoHS: Compliant	1160	1 $2.99 10 $1.8 100 $1.78 250 $1.77 500 $1.75
IRFB4332PBF DISTI #	Infineon Technologies AG	Trans MOSFET N-CH 250V 60A 3-Pin(3 Tab) TO-220AB T RoHS: Compliant	1000	1 $3.66 10 $2.83 50 $2.39 100 $2.11 500 $2.07 1000 $1.99
IRFB4332PBF DISTI #	Infineon Technologies AG	MOSFET, N, 250V, TO-220AB RoHS: Compliant	1139	1 $5.99 10 $5.09 100 $4.4

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Infineon Technologies IRFB4332PBF

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