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IRFB4310PBF

Infineon Technologies IRFB4310PBF

Part Number:
IRFB4310PBF
Manufacturer:
Infineon Technologies
Ventron No:
3586046-IRFB4310PBF
Description:
MOSFET N-CH 100V 130A TO-220AB
ECAD Model:
Datasheet:
IRFB4310PBF

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Specifications
Infineon Technologies IRFB4310PBF technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies IRFB4310PBF.
  • Factory Lead Time
    12 Weeks
  • Contact Plating
    Tin
  • Mount
    Through Hole
  • Mounting Type
    Through Hole
  • Package / Case
    TO-220-3
  • Number of Pins
    3
  • Transistor Element Material
    SILICON
  • Operating Temperature
    -55°C~175°C TJ
  • Packaging
    Tube
  • Series
    HEXFET®
  • Published
    2004
  • JESD-609 Code
    e3
  • Part Status
    Active
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    3
  • Termination
    Through Hole
  • ECCN Code
    EAR99
  • Resistance
    7MOhm
  • Subcategory
    FET General Purpose Power
  • Voltage - Rated DC
    100V
  • Technology
    MOSFET (Metal Oxide)
  • Peak Reflow Temperature (Cel)
    250
  • Current Rating
    140A
  • Time@Peak Reflow Temperature-Max (s)
    30
  • Number of Elements
    1
  • Power Dissipation-Max
    300W Tc
  • Element Configuration
    Single
  • Operating Mode
    ENHANCEMENT MODE
  • Power Dissipation
    300W
  • Case Connection
    DRAIN
  • Turn On Delay Time
    26 ns
  • FET Type
    N-Channel
  • Transistor Application
    SWITCHING
  • Rds On (Max) @ Id, Vgs
    7m Ω @ 75A, 10V
  • Vgs(th) (Max) @ Id
    4V @ 250μA
  • Input Capacitance (Ciss) (Max) @ Vds
    7670pF @ 50V
  • Current - Continuous Drain (Id) @ 25°C
    130A Tc
  • Gate Charge (Qg) (Max) @ Vgs
    250nC @ 10V
  • Rise Time
    110ns
  • Drive Voltage (Max Rds On,Min Rds On)
    10V
  • Vgs (Max)
    ±20V
  • Fall Time (Typ)
    78 ns
  • Turn-Off Delay Time
    68 ns
  • Continuous Drain Current (ID)
    130A
  • Threshold Voltage
    4V
  • JEDEC-95 Code
    TO-220AB
  • Gate to Source Voltage (Vgs)
    20V
  • Drain Current-Max (Abs) (ID)
    75A
  • Drain to Source Breakdown Voltage
    100V
  • Pulsed Drain Current-Max (IDM)
    550A
  • Dual Supply Voltage
    100V
  • Avalanche Energy Rating (Eas)
    980 mJ
  • Recovery Time
    68 ns
  • Nominal Vgs
    4 V
  • Height
    9.02mm
  • Length
    10.6426mm
  • Width
    4.82mm
  • REACH SVHC
    No SVHC
  • Radiation Hardening
    No
  • RoHS Status
    ROHS3 Compliant
  • Lead Free
    Lead Free
Description
Description
The IRFB4310PBF is an enhanced gate, avalanche, and dynamic dV/dt robust HEXFET? single N-channel Power MOSFET. In SMPS, hard switched, and high-frequency circuits, it is appropriate for synchronous rectification with high efficiency.

Features
Enhanced body diode dV/dt and dI/dt Capability
Lead-Free
Improved Gate, Avalanche and Dynamic dV/dt Ruggedness
Fully Characterized Capacitance and Avalanche SOA
On-resistance (RDS(ON))

Applications
High-Speed Power Switching
Hard Switched and High-Frequency Circuits
High-Efficiency Synchronous Rectification in SMPS
Uninterruptible Power Supply
Power Management
IRFB4310PBF More Descriptions
MOSFET, Power;N-Ch;VDSS 100V;RDS(ON) 5.6 Milliohms;ID 130A;TO-220AB;PD 300W
Single N-Channel 100 V 7 mOhm 250 nC HEXFET® Power Mosfet - TO-220-3
INFINEON THT MOSFET NFET 100V 130A 7mΩ 175°C TO-220 IRFB4310PBF
100V Single N-Channel HEXFET Power MOSFET in a TO-220AB package, TO220-3, RoHSInfineon SCT
Trans MOSFET N-CH 100V 130A 3-Pin(3 Tab) TO-220AB - Rail/Tube
Power Field-Effect Transistor, 75A I(D), 100V, 0.007ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
Benefits: RoHS Compliant; Industry-leading quality; Fast Switching; 175C Operating Temperature | Target Applications: AC-DC
N Channel Mosfet, 100V, 130A, To-220Ab; Channel Type:N Channel; Drain Source Voltage Vds:100V; Continuous Drain Current Id:130A; Transistor Mounting:Through Hole; Rds(On) Test Voltage:10V; Gate Source Threshold Voltage Max:4V; Msl:- Rohs Compliant: Yes |Infineon IRFB4310PBF.
Product Comparison
The three parts on the right have similar specifications to IRFB4310PBF.
  • Image
    Part Number
    Manufacturer
    Factory Lead Time
    Contact Plating
    Mount
    Mounting Type
    Package / Case
    Number of Pins
    Transistor Element Material
    Operating Temperature
    Packaging
    Series
    Published
    JESD-609 Code
    Part Status
    Moisture Sensitivity Level (MSL)
    Number of Terminations
    Termination
    ECCN Code
    Resistance
    Subcategory
    Voltage - Rated DC
    Technology
    Peak Reflow Temperature (Cel)
    Current Rating
    Time@Peak Reflow Temperature-Max (s)
    Number of Elements
    Power Dissipation-Max
    Element Configuration
    Operating Mode
    Power Dissipation
    Case Connection
    Turn On Delay Time
    FET Type
    Transistor Application
    Rds On (Max) @ Id, Vgs
    Vgs(th) (Max) @ Id
    Input Capacitance (Ciss) (Max) @ Vds
    Current - Continuous Drain (Id) @ 25°C
    Gate Charge (Qg) (Max) @ Vgs
    Rise Time
    Drive Voltage (Max Rds On,Min Rds On)
    Vgs (Max)
    Fall Time (Typ)
    Turn-Off Delay Time
    Continuous Drain Current (ID)
    Threshold Voltage
    JEDEC-95 Code
    Gate to Source Voltage (Vgs)
    Drain Current-Max (Abs) (ID)
    Drain to Source Breakdown Voltage
    Pulsed Drain Current-Max (IDM)
    Dual Supply Voltage
    Avalanche Energy Rating (Eas)
    Recovery Time
    Nominal Vgs
    Height
    Length
    Width
    REACH SVHC
    Radiation Hardening
    RoHS Status
    Lead Free
    Supplier Device Package
    Max Operating Temperature
    Min Operating Temperature
    Drain to Source Voltage (Vdss)
    Input Capacitance
    Drain to Source Resistance
    Rds On Max
    Surface Mount
    Terminal Position
    JESD-30 Code
    Qualification Status
    Configuration
    Drain-source On Resistance-Max
    DS Breakdown Voltage-Min
    View Compare
  • IRFB4310PBF
    IRFB4310PBF
    Infineon Technologies
    12 Weeks
    Tin
    Through Hole
    Through Hole
    TO-220-3
    3
    SILICON
    -55°C~175°C TJ
    Tube
    HEXFET®
    2004
    e3
    Active
    1 (Unlimited)
    3
    Through Hole
    EAR99
    7MOhm
    FET General Purpose Power
    100V
    MOSFET (Metal Oxide)
    250
    140A
    30
    1
    300W Tc
    Single
    ENHANCEMENT MODE
    300W
    DRAIN
    26 ns
    N-Channel
    SWITCHING
    7m Ω @ 75A, 10V
    4V @ 250μA
    7670pF @ 50V
    130A Tc
    250nC @ 10V
    110ns
    10V
    ±20V
    78 ns
    68 ns
    130A
    4V
    TO-220AB
    20V
    75A
    100V
    550A
    100V
    980 mJ
    68 ns
    4 V
    9.02mm
    10.6426mm
    4.82mm
    No SVHC
    No
    ROHS3 Compliant
    Lead Free
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • IRFB4233PBF
    IRFB4233PBF
    Infineon Technologies
    -
    -
    Through Hole
    Through Hole
    TO-220-3
    3
    -
    -40°C~175°C TJ
    Tube
    HEXFET®
    2007
    -
    Obsolete
    1 (Unlimited)
    -
    Through Hole
    -
    -
    -
    -
    MOSFET (Metal Oxide)
    -
    -
    -
    1
    370W Tc
    Single
    -
    370W
    -
    31 ns
    N-Channel
    -
    37mOhm @ 28A, 10V
    5V @ 250μA
    5510pF @ 25V
    56A Tc
    170nC @ 10V
    -
    10V
    ±30V
    -
    51 ns
    56A
    5V
    -
    30V
    -
    230V
    -
    276V
    -
    -
    5 V
    16.51mm
    10.6426mm
    4.82mm
    No SVHC
    No
    RoHS Compliant
    -
    TO-220AB
    175°C
    -40°C
    230V
    5.51nF
    37mOhm
    37 mΩ
    -
    -
    -
    -
    -
    -
    -
    IRFB4310PBF vs IRFB4233PBF
  • IRFBA1404P
    IRFBA1404P
    Infineon Technologies
    -
    -
    -
    Through Hole
    TO-273AA
    -
    SILICON
    -40°C~175°C TJ
    Tube
    HEXFET®
    2010
    -
    Obsolete
    1 (Unlimited)
    3
    -
    EAR99
    -
    -
    -
    MOSFET (Metal Oxide)
    NOT SPECIFIED
    -
    NOT SPECIFIED
    1
    300W Tc
    -
    ENHANCEMENT MODE
    -
    DRAIN
    -
    N-Channel
    SWITCHING
    3.7m Ω @ 95A, 10V
    4V @ 250μA
    7360pF @ 25V
    206A Tc
    200nC @ 10V
    -
    10V
    ±20V
    -
    -
    -
    -
    -
    -
    95A
    -
    650A
    -
    -
    -
    -
    -
    -
    -
    -
    -
    Non-RoHS Compliant
    -
    -
    -
    -
    40V
    -
    -
    -
    NO
    SINGLE
    R-PSIP-T3
    Not Qualified
    SINGLE WITH BUILT-IN DIODE
    0.0037Ohm
    40V
    IRFB4310PBF vs IRFBA1404P
  • IRFB23N20DPBF
    IRFB23N20DPBF
    Infineon Technologies
    14 Weeks
    Tin
    Through Hole
    Through Hole
    TO-220-3
    3
    SILICON
    -55°C~175°C TJ
    Tube
    HEXFET®
    2000
    -
    Not For New Designs
    1 (Unlimited)
    3
    Through Hole
    EAR99
    100MOhm
    FET General Purpose Power
    200V
    MOSFET (Metal Oxide)
    -
    24A
    -
    1
    3.8W Ta 170W Tc
    Single
    ENHANCEMENT MODE
    170W
    DRAIN
    14 ns
    N-Channel
    SWITCHING
    100m Ω @ 14A, 10V
    5.5V @ 250μA
    1960pF @ 25V
    24A Tc
    86nC @ 10V
    32ns
    10V
    ±30V
    16 ns
    26 ns
    24A
    5.5V
    TO-220AB
    30V
    -
    200V
    96A
    200V
    250 mJ
    -
    5.5 V
    4.69mm
    10.54mm
    4.699mm
    No SVHC
    No
    ROHS3 Compliant
    Contains Lead, Lead Free
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    IRFB4310PBF vs IRFB23N20DPBF
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS
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