Infineon Technologies IRFB4127PBF

IRFB4127PBF Overview
There is an avalanche breakdown in which energy is applied to the MOSFET to cause it to break down, and this energy is called avalanche energy, and the avalanche energy rating (Eas) is 250 mJ.Op amps with either input grounded have a fixed input capacitance parameter, CI, and this device has a 5380pF @ 50V maximal input capacitance.Devices can conduct a maximum continuous current of 3 amps in the drain area, so the continuous drain current (ID) for this device is 76A amps.In this device, the drain-source breakdown voltage is 200V and VGS=200V, so the drain-source breakdown voltage is 200V in this case.It is [56 ns] because it takes time to charge the input capacitance of the device before drain current conduction can begin.A turn-on delay time of 17 ns indicates the time it takes for the input capacitance of the device to charge before drain current conduction starts.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.Normally, electrical devices are set to activate all of their operations at threshold voltages, and this transistor's threshold voltage is 5V.A device like this reduces its overall power consumption when it uses drive voltage (10V).

IRFB4127PBF Features
the avalanche energy rating (Eas) is 250 mJ
a continuous drain current (ID) of 76A
a drain-to-source breakdown voltage of 200V voltage
the turn-off delay time is 56 ns
a threshold voltage of 5V


IRFB4127PBF Applications
There are a lot of Infineon Technologies
IRFB4127PBF applications of single MOSFETs transistors.


Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies