IRFB4115PBF

Infineon Technologies IRFB4115PBF

Part Number:
IRFB4115PBF
Manufacturer:
Infineon Technologies
Ventron No:
2849076-IRFB4115PBF
Description:
MOSFET N-CH 150V 104A TO220AB
ECAD Model:
Datasheet:
IRFB4115PBF

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Specifications
Infineon Technologies IRFB4115PBF technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies IRFB4115PBF.
  • Factory Lead Time
    12 Weeks
  • Mount
    Through Hole
  • Mounting Type
    Through Hole
  • Package / Case
    TO-220-3
  • Number of Pins
    3
  • Transistor Element Material
    SILICON
  • Operating Temperature
    -55°C~175°C TJ
  • Packaging
    Tube
  • Series
    HEXFET®
  • Published
    2008
  • JESD-609 Code
    e3
  • Part Status
    Active
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    3
  • Termination
    Through Hole
  • ECCN Code
    EAR99
  • Terminal Finish
    MATTE TIN OVER NICKEL
  • Subcategory
    FET General Purpose Power
  • Technology
    MOSFET (Metal Oxide)
  • Peak Reflow Temperature (Cel)
    250
  • Time@Peak Reflow Temperature-Max (s)
    30
  • Number of Elements
    1
  • Number of Channels
    1
  • Power Dissipation-Max
    380W Tc
  • Element Configuration
    Single
  • Operating Mode
    ENHANCEMENT MODE
  • Power Dissipation
    380W
  • Turn On Delay Time
    18 ns
  • FET Type
    N-Channel
  • Transistor Application
    SWITCHING
  • Rds On (Max) @ Id, Vgs
    11m Ω @ 62A, 10V
  • Vgs(th) (Max) @ Id
    5V @ 250μA
  • Input Capacitance (Ciss) (Max) @ Vds
    5270pF @ 50V
  • Current - Continuous Drain (Id) @ 25°C
    104A Tc
  • Gate Charge (Qg) (Max) @ Vgs
    120nC @ 10V
  • Rise Time
    73ns
  • Drive Voltage (Max Rds On,Min Rds On)
    10V
  • Vgs (Max)
    ±20V
  • Fall Time (Typ)
    39 ns
  • Turn-Off Delay Time
    41 ns
  • Continuous Drain Current (ID)
    104A
  • Threshold Voltage
    5V
  • JEDEC-95 Code
    TO-220AB
  • Gate to Source Voltage (Vgs)
    20V
  • Drain to Source Breakdown Voltage
    150V
  • Pulsed Drain Current-Max (IDM)
    420A
  • Dual Supply Voltage
    150V
  • Max Junction Temperature (Tj)
    175°C
  • Nominal Vgs
    5 V
  • Height
    19.8mm
  • Length
    10.668mm
  • Width
    4.826mm
  • REACH SVHC
    No SVHC
  • Radiation Hardening
    No
  • RoHS Status
    ROHS3 Compliant
  • Lead Free
    Lead Free
Description
IRFB4115PBF Overview
An op amp's input capacitance is defined as the capacitance between both of its input terminals with either input grounded, and 5270pF @ 50V is its maximum input capacitance.The drain current is the maximum continuous current the device can conduct, and this device has 104A continuous drain current (ID).A drainage-to-source breakdown voltage corresponds to the voltage at which a specified value of ID flows, where VGS is 150V, and this device has a drainage-to-source breakdown voltage of 150VV.Input capacitance must be charged before drain current conduction can begin, so the turn-off delay time is 41 ns.Peak drain current is 420A, which is the maximum pulsed drain current.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 18 ns.An FET transistor's gate-source voltage, VGS, indicates how much voltage is applied across the transistor's gate-source terminal and it can range from 20V to 1.In this case, the threshold voltage of the transistor is 5V, which means that it will not activate any of its functions when its threshold voltage reaches 5V.Using drive voltage (10V), this device contributes to a reduction in overall power consumption.

IRFB4115PBF Features
a continuous drain current (ID) of 104A
a drain-to-source breakdown voltage of 150V voltage
the turn-off delay time is 41 ns
based on its rated peak drain current 420A.
a threshold voltage of 5V


IRFB4115PBF Applications
There are a lot of Infineon Technologies
IRFB4115PBF applications of single MOSFETs transistors.


AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
IRFB4115PBF More Descriptions
Single N-Channel 150V 11 mOhm 120 nC HEXFET® Power Mosfet - TO-220-3
150V Single N-Channel HEXFET Power MOSFET in a TO-220AB package, TO220-3, RoHSInfineon SCT
Trans MOSFET N-CH 150V 104A 3-Pin(3 Tab) TO-220AB Tube - Rail/Tube
MOSFET, 150V, 104A, 11 mOhm, 77 nC Qg, TO220AB
Power Field-Effect Transistor, 104A I(D), 150V, 0.011ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
N Channel Mosfet, 150V, 104A, To-220Ab; Channel Type:N Channel; Drain Source Voltage Vds:150V; Continuous Drain Current Id:104A; Transistor Mounting:Through Hole; Rds(On) Test Voltage:20V; Gate Source Threshold Voltage Max:5V; Msl:- Rohs Compliant: Yes |Infineon IRFB4115PBF.
MOSFET, N-CH 150V 104A TO220; Transistor Polarity:N Channel; Continuous Drain Current Id:62A; Drain Source Voltage Vds:150V; On Resistance Rds(on):11mohm; Rds(on) Test Voltage Vgs:20V; Threshold Voltage Vgs Typ:5V; Power Dissipation Pd:380W; Operating Temperature Range:-55°C to 175°C; Transistor Case Style:TO-220AB; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:104A; Package / Case:TO-220AB; Power Dissipation Pd:380W; Power Dissipation Pd:380W; Termination Type:Through Hole; Transistor Type:Power MOSFET; Voltage Vds Typ:150V; Voltage Vgs Max:5V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:5V
Product Comparison
The three parts on the right have similar specifications to IRFB4115PBF.
  • Image
    Part Number
    Manufacturer
    Factory Lead Time
    Mount
    Mounting Type
    Package / Case
    Number of Pins
    Transistor Element Material
    Operating Temperature
    Packaging
    Series
    Published
    JESD-609 Code
    Part Status
    Moisture Sensitivity Level (MSL)
    Number of Terminations
    Termination
    ECCN Code
    Terminal Finish
    Subcategory
    Technology
    Peak Reflow Temperature (Cel)
    Time@Peak Reflow Temperature-Max (s)
    Number of Elements
    Number of Channels
    Power Dissipation-Max
    Element Configuration
    Operating Mode
    Power Dissipation
    Turn On Delay Time
    FET Type
    Transistor Application
    Rds On (Max) @ Id, Vgs
    Vgs(th) (Max) @ Id
    Input Capacitance (Ciss) (Max) @ Vds
    Current - Continuous Drain (Id) @ 25°C
    Gate Charge (Qg) (Max) @ Vgs
    Rise Time
    Drive Voltage (Max Rds On,Min Rds On)
    Vgs (Max)
    Fall Time (Typ)
    Turn-Off Delay Time
    Continuous Drain Current (ID)
    Threshold Voltage
    JEDEC-95 Code
    Gate to Source Voltage (Vgs)
    Drain to Source Breakdown Voltage
    Pulsed Drain Current-Max (IDM)
    Dual Supply Voltage
    Max Junction Temperature (Tj)
    Nominal Vgs
    Height
    Length
    Width
    REACH SVHC
    Radiation Hardening
    RoHS Status
    Lead Free
    Supplier Device Package
    Weight
    Max Operating Temperature
    Min Operating Temperature
    Voltage - Rated DC
    Current Rating
    Drain to Source Voltage (Vdss)
    Input Capacitance
    Drain to Source Resistance
    Rds On Max
    Contact Plating
    Resistance
    Case Connection
    Recovery Time
    View Compare
  • IRFB4115PBF
    IRFB4115PBF
    12 Weeks
    Through Hole
    Through Hole
    TO-220-3
    3
    SILICON
    -55°C~175°C TJ
    Tube
    HEXFET®
    2008
    e3
    Active
    1 (Unlimited)
    3
    Through Hole
    EAR99
    MATTE TIN OVER NICKEL
    FET General Purpose Power
    MOSFET (Metal Oxide)
    250
    30
    1
    1
    380W Tc
    Single
    ENHANCEMENT MODE
    380W
    18 ns
    N-Channel
    SWITCHING
    11m Ω @ 62A, 10V
    5V @ 250μA
    5270pF @ 50V
    104A Tc
    120nC @ 10V
    73ns
    10V
    ±20V
    39 ns
    41 ns
    104A
    5V
    TO-220AB
    20V
    150V
    420A
    150V
    175°C
    5 V
    19.8mm
    10.668mm
    4.826mm
    No SVHC
    No
    ROHS3 Compliant
    Lead Free
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • IRFB16N50KPBF
    -
    Through Hole
    Through Hole
    TO-220-3
    3
    -
    -55°C~150°C TJ
    Tube
    -
    2004
    -
    Obsolete
    1 (Unlimited)
    -
    -
    -
    -
    -
    MOSFET (Metal Oxide)
    -
    -
    -
    1
    280W Tc
    Single
    -
    280W
    20 ns
    N-Channel
    -
    350mOhm @ 10A, 10V
    5V @ 250μA
    2210pF @ 25V
    17A Tc
    89nC @ 10V
    77ns
    10V
    ±30V
    30 ns
    38 ns
    17A
    -
    -
    30V
    500V
    -
    -
    -
    -
    9.01mm
    10.41mm
    4.7mm
    -
    -
    ROHS3 Compliant
    Lead Free
    TO-220AB
    6.000006g
    150°C
    -55°C
    500V
    17A
    500V
    2.21nF
    350mOhm
    350 mΩ
    -
    -
    -
    -
  • IRFB5620PBF
    12 Weeks
    Through Hole
    Through Hole
    TO-220-3
    3
    -
    -55°C~175°C TJ
    Tube
    -
    2007
    -
    Active
    1 (Unlimited)
    -
    Through Hole
    -
    -
    -
    MOSFET (Metal Oxide)
    -
    -
    1
    -
    144W Tc
    Single
    -
    144W
    8.6 ns
    N-Channel
    -
    72.5mOhm @ 15A, 10V
    5V @ 100μA
    1710pF @ 50V
    25A Tc
    38nC @ 10V
    14.6ns
    10V
    ±20V
    9.9 ns
    17.1 ns
    25A
    5V
    -
    20V
    200V
    -
    200V
    -
    5 V
    9.02mm
    10.668mm
    4.826mm
    No SVHC
    No
    ROHS3 Compliant
    Lead Free
    TO-220AB
    -
    175°C
    -55°C
    -
    -
    200V
    1.71nF
    72.5mOhm
    72.5 mΩ
    Tin
    72.5MOhm
    -
    -
  • IRFB4310ZPBF
    12 Weeks
    Through Hole
    Through Hole
    TO-220-3
    3
    SILICON
    -55°C~175°C TJ
    Tube
    HEXFET®
    2008
    -
    Active
    1 (Unlimited)
    3
    Through Hole
    EAR99
    -
    FET General Purpose Power
    MOSFET (Metal Oxide)
    -
    -
    1
    -
    250W Tc
    Single
    ENHANCEMENT MODE
    250W
    20 ns
    N-Channel
    SWITCHING
    6m Ω @ 75A, 10V
    4V @ 150μA
    6860pF @ 50V
    120A Tc
    170nC @ 10V
    60ns
    10V
    ±20V
    57 ns
    55 ns
    140A
    4V
    TO-220AB
    20V
    100V
    560A
    100V
    -
    4 V
    9.017mm
    10.668mm
    4.826mm
    No SVHC
    No
    ROHS3 Compliant
    Lead Free
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    6MOhm
    DRAIN
    40 ns
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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