Infineon Technologies IRFB4115PBF
- Part Number:
- IRFB4115PBF
- Manufacturer:
- Infineon Technologies
- Ventron No:
- 2849076-IRFB4115PBF
- Description:
- MOSFET N-CH 150V 104A TO220AB
- Datasheet:
- IRFB4115PBF
Infineon Technologies IRFB4115PBF technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies IRFB4115PBF.
- Factory Lead Time12 Weeks
- MountThrough Hole
- Mounting TypeThrough Hole
- Package / CaseTO-220-3
- Number of Pins3
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~175°C TJ
- PackagingTube
- SeriesHEXFET®
- Published2008
- JESD-609 Codee3
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- TerminationThrough Hole
- ECCN CodeEAR99
- Terminal FinishMATTE TIN OVER NICKEL
- SubcategoryFET General Purpose Power
- TechnologyMOSFET (Metal Oxide)
- Peak Reflow Temperature (Cel)250
- Time@Peak Reflow Temperature-Max (s)30
- Number of Elements1
- Number of Channels1
- Power Dissipation-Max380W Tc
- Element ConfigurationSingle
- Operating ModeENHANCEMENT MODE
- Power Dissipation380W
- Turn On Delay Time18 ns
- FET TypeN-Channel
- Transistor ApplicationSWITCHING
- Rds On (Max) @ Id, Vgs11m Ω @ 62A, 10V
- Vgs(th) (Max) @ Id5V @ 250μA
- Input Capacitance (Ciss) (Max) @ Vds5270pF @ 50V
- Current - Continuous Drain (Id) @ 25°C104A Tc
- Gate Charge (Qg) (Max) @ Vgs120nC @ 10V
- Rise Time73ns
- Drive Voltage (Max Rds On,Min Rds On)10V
- Vgs (Max)±20V
- Fall Time (Typ)39 ns
- Turn-Off Delay Time41 ns
- Continuous Drain Current (ID)104A
- Threshold Voltage5V
- JEDEC-95 CodeTO-220AB
- Gate to Source Voltage (Vgs)20V
- Drain to Source Breakdown Voltage150V
- Pulsed Drain Current-Max (IDM)420A
- Dual Supply Voltage150V
- Max Junction Temperature (Tj)175°C
- Nominal Vgs5 V
- Height19.8mm
- Length10.668mm
- Width4.826mm
- REACH SVHCNo SVHC
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
IRFB4115PBF Overview
An op amp's input capacitance is defined as the capacitance between both of its input terminals with either input grounded, and 5270pF @ 50V is its maximum input capacitance.The drain current is the maximum continuous current the device can conduct, and this device has 104A continuous drain current (ID).A drainage-to-source breakdown voltage corresponds to the voltage at which a specified value of ID flows, where VGS is 150V, and this device has a drainage-to-source breakdown voltage of 150VV.Input capacitance must be charged before drain current conduction can begin, so the turn-off delay time is 41 ns.Peak drain current is 420A, which is the maximum pulsed drain current.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 18 ns.An FET transistor's gate-source voltage, VGS, indicates how much voltage is applied across the transistor's gate-source terminal and it can range from 20V to 1.In this case, the threshold voltage of the transistor is 5V, which means that it will not activate any of its functions when its threshold voltage reaches 5V.Using drive voltage (10V), this device contributes to a reduction in overall power consumption.
IRFB4115PBF Features
a continuous drain current (ID) of 104A
a drain-to-source breakdown voltage of 150V voltage
the turn-off delay time is 41 ns
based on its rated peak drain current 420A.
a threshold voltage of 5V
IRFB4115PBF Applications
There are a lot of Infineon Technologies
IRFB4115PBF applications of single MOSFETs transistors.
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
An op amp's input capacitance is defined as the capacitance between both of its input terminals with either input grounded, and 5270pF @ 50V is its maximum input capacitance.The drain current is the maximum continuous current the device can conduct, and this device has 104A continuous drain current (ID).A drainage-to-source breakdown voltage corresponds to the voltage at which a specified value of ID flows, where VGS is 150V, and this device has a drainage-to-source breakdown voltage of 150VV.Input capacitance must be charged before drain current conduction can begin, so the turn-off delay time is 41 ns.Peak drain current is 420A, which is the maximum pulsed drain current.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 18 ns.An FET transistor's gate-source voltage, VGS, indicates how much voltage is applied across the transistor's gate-source terminal and it can range from 20V to 1.In this case, the threshold voltage of the transistor is 5V, which means that it will not activate any of its functions when its threshold voltage reaches 5V.Using drive voltage (10V), this device contributes to a reduction in overall power consumption.
IRFB4115PBF Features
a continuous drain current (ID) of 104A
a drain-to-source breakdown voltage of 150V voltage
the turn-off delay time is 41 ns
based on its rated peak drain current 420A.
a threshold voltage of 5V
IRFB4115PBF Applications
There are a lot of Infineon Technologies
IRFB4115PBF applications of single MOSFETs transistors.
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
IRFB4115PBF More Descriptions
Single N-Channel 150V 11 mOhm 120 nC HEXFET® Power Mosfet - TO-220-3
150V Single N-Channel HEXFET Power MOSFET in a TO-220AB package, TO220-3, RoHSInfineon SCT
Trans MOSFET N-CH 150V 104A 3-Pin(3 Tab) TO-220AB Tube - Rail/Tube
MOSFET, 150V, 104A, 11 mOhm, 77 nC Qg, TO220AB
Power Field-Effect Transistor, 104A I(D), 150V, 0.011ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
N Channel Mosfet, 150V, 104A, To-220Ab; Channel Type:N Channel; Drain Source Voltage Vds:150V; Continuous Drain Current Id:104A; Transistor Mounting:Through Hole; Rds(On) Test Voltage:20V; Gate Source Threshold Voltage Max:5V; Msl:- Rohs Compliant: Yes |Infineon IRFB4115PBF.
MOSFET, N-CH 150V 104A TO220; Transistor Polarity:N Channel; Continuous Drain Current Id:62A; Drain Source Voltage Vds:150V; On Resistance Rds(on):11mohm; Rds(on) Test Voltage Vgs:20V; Threshold Voltage Vgs Typ:5V; Power Dissipation Pd:380W; Operating Temperature Range:-55°C to 175°C; Transistor Case Style:TO-220AB; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:104A; Package / Case:TO-220AB; Power Dissipation Pd:380W; Power Dissipation Pd:380W; Termination Type:Through Hole; Transistor Type:Power MOSFET; Voltage Vds Typ:150V; Voltage Vgs Max:5V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:5V
150V Single N-Channel HEXFET Power MOSFET in a TO-220AB package, TO220-3, RoHSInfineon SCT
Trans MOSFET N-CH 150V 104A 3-Pin(3 Tab) TO-220AB Tube - Rail/Tube
MOSFET, 150V, 104A, 11 mOhm, 77 nC Qg, TO220AB
Power Field-Effect Transistor, 104A I(D), 150V, 0.011ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
N Channel Mosfet, 150V, 104A, To-220Ab; Channel Type:N Channel; Drain Source Voltage Vds:150V; Continuous Drain Current Id:104A; Transistor Mounting:Through Hole; Rds(On) Test Voltage:20V; Gate Source Threshold Voltage Max:5V; Msl:- Rohs Compliant: Yes |Infineon IRFB4115PBF.
MOSFET, N-CH 150V 104A TO220; Transistor Polarity:N Channel; Continuous Drain Current Id:62A; Drain Source Voltage Vds:150V; On Resistance Rds(on):11mohm; Rds(on) Test Voltage Vgs:20V; Threshold Voltage Vgs Typ:5V; Power Dissipation Pd:380W; Operating Temperature Range:-55°C to 175°C; Transistor Case Style:TO-220AB; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:104A; Package / Case:TO-220AB; Power Dissipation Pd:380W; Power Dissipation Pd:380W; Termination Type:Through Hole; Transistor Type:Power MOSFET; Voltage Vds Typ:150V; Voltage Vgs Max:5V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:5V
The three parts on the right have similar specifications to IRFB4115PBF.
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ImagePart NumberManufacturerFactory Lead TimeMountMounting TypePackage / CaseNumber of PinsTransistor Element MaterialOperating TemperaturePackagingSeriesPublishedJESD-609 CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsTerminationECCN CodeTerminal FinishSubcategoryTechnologyPeak Reflow Temperature (Cel)Time@Peak Reflow Temperature-Max (s)Number of ElementsNumber of ChannelsPower Dissipation-MaxElement ConfigurationOperating ModePower DissipationTurn On Delay TimeFET TypeTransistor ApplicationRds On (Max) @ Id, VgsVgs(th) (Max) @ IdInput Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25°CGate Charge (Qg) (Max) @ VgsRise TimeDrive Voltage (Max Rds On,Min Rds On)Vgs (Max)Fall Time (Typ)Turn-Off Delay TimeContinuous Drain Current (ID)Threshold VoltageJEDEC-95 CodeGate to Source Voltage (Vgs)Drain to Source Breakdown VoltagePulsed Drain Current-Max (IDM)Dual Supply VoltageMax Junction Temperature (Tj)Nominal VgsHeightLengthWidthREACH SVHCRadiation HardeningRoHS StatusLead FreeSupplier Device PackageWeightMax Operating TemperatureMin Operating TemperatureVoltage - Rated DCCurrent RatingDrain to Source Voltage (Vdss)Input CapacitanceDrain to Source ResistanceRds On MaxContact PlatingResistanceCase ConnectionRecovery TimeView Compare
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IRFB4115PBF12 WeeksThrough HoleThrough HoleTO-220-33SILICON-55°C~175°C TJTubeHEXFET®2008e3Active1 (Unlimited)3Through HoleEAR99MATTE TIN OVER NICKELFET General Purpose PowerMOSFET (Metal Oxide)2503011380W TcSingleENHANCEMENT MODE380W18 nsN-ChannelSWITCHING11m Ω @ 62A, 10V5V @ 250μA5270pF @ 50V104A Tc120nC @ 10V73ns10V±20V39 ns41 ns104A5VTO-220AB20V150V420A150V175°C5 V19.8mm10.668mm4.826mmNo SVHCNoROHS3 CompliantLead Free---------------
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-Through HoleThrough HoleTO-220-33--55°C~150°C TJTube-2004-Obsolete1 (Unlimited)-----MOSFET (Metal Oxide)---1280W TcSingle-280W20 nsN-Channel-350mOhm @ 10A, 10V5V @ 250μA2210pF @ 25V17A Tc89nC @ 10V77ns10V±30V30 ns38 ns17A--30V500V----9.01mm10.41mm4.7mm--ROHS3 CompliantLead FreeTO-220AB6.000006g150°C-55°C500V17A500V2.21nF350mOhm350 mΩ----
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12 WeeksThrough HoleThrough HoleTO-220-33--55°C~175°C TJTube-2007-Active1 (Unlimited)-Through Hole---MOSFET (Metal Oxide)--1-144W TcSingle-144W8.6 nsN-Channel-72.5mOhm @ 15A, 10V5V @ 100μA1710pF @ 50V25A Tc38nC @ 10V14.6ns10V±20V9.9 ns17.1 ns25A5V-20V200V-200V-5 V9.02mm10.668mm4.826mmNo SVHCNoROHS3 CompliantLead FreeTO-220AB-175°C-55°C--200V1.71nF72.5mOhm72.5 mΩTin72.5MOhm--
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12 WeeksThrough HoleThrough HoleTO-220-33SILICON-55°C~175°C TJTubeHEXFET®2008-Active1 (Unlimited)3Through HoleEAR99-FET General Purpose PowerMOSFET (Metal Oxide)--1-250W TcSingleENHANCEMENT MODE250W20 nsN-ChannelSWITCHING6m Ω @ 75A, 10V4V @ 150μA6860pF @ 50V120A Tc170nC @ 10V60ns10V±20V57 ns55 ns140A4VTO-220AB20V100V560A100V-4 V9.017mm10.668mm4.826mmNo SVHCNoROHS3 CompliantLead Free-----------6MOhmDRAIN40 ns
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