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IRFB4110PBF

Infineon Technologies IRFB4110PBF

Part Number:
IRFB4110PBF
Manufacturer:
Infineon Technologies
Ventron No:
2479010-IRFB4110PBF
Description:
MOSFET N-CH 100V 120A TO-220AB
ECAD Model:
Datasheet:
IRFB4110PBF

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Specifications
Infineon Technologies IRFB4110PBF technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies IRFB4110PBF.
  • Factory Lead Time
    12 Weeks
  • Contact Plating
    Tin
  • Mount
    Through Hole
  • Mounting Type
    Through Hole
  • Package / Case
    TO-220-3
  • Number of Pins
    3
  • Transistor Element Material
    SILICON
  • Operating Temperature
    -55°C~175°C TJ
  • Packaging
    Tube
  • Series
    HEXFET®
  • Published
    2008
  • Part Status
    Active
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    3
  • Termination
    Through Hole
  • ECCN Code
    EAR99
  • Subcategory
    FET General Purpose Power
  • Voltage - Rated DC
    100V
  • Technology
    MOSFET (Metal Oxide)
  • Current Rating
    180A
  • Number of Elements
    1
  • Power Dissipation-Max
    370W Tc
  • Element Configuration
    Single
  • Operating Mode
    ENHANCEMENT MODE
  • Power Dissipation
    370W
  • Case Connection
    DRAIN
  • Turn On Delay Time
    25 ns
  • FET Type
    N-Channel
  • Transistor Application
    SWITCHING
  • Rds On (Max) @ Id, Vgs
    4.5m Ω @ 75A, 10V
  • Vgs(th) (Max) @ Id
    4V @ 250μA
  • Input Capacitance (Ciss) (Max) @ Vds
    9620pF @ 50V
  • Current - Continuous Drain (Id) @ 25°C
    120A Tc
  • Gate Charge (Qg) (Max) @ Vgs
    210nC @ 10V
  • Rise Time
    67ns
  • Drive Voltage (Max Rds On,Min Rds On)
    10V
  • Vgs (Max)
    ±20V
  • Fall Time (Typ)
    88 ns
  • Turn-Off Delay Time
    78 ns
  • Continuous Drain Current (ID)
    180A
  • Threshold Voltage
    4V
  • JEDEC-95 Code
    TO-220AB
  • Gate to Source Voltage (Vgs)
    20V
  • Drain-source On Resistance-Max
    0.0045Ohm
  • Drain to Source Breakdown Voltage
    100V
  • Pulsed Drain Current-Max (IDM)
    670A
  • Dual Supply Voltage
    100V
  • Recovery Time
    75 ns
  • Nominal Vgs
    4 V
  • Height
    16.51mm
  • Length
    10.66mm
  • Width
    4.826mm
  • REACH SVHC
    No SVHC
  • Radiation Hardening
    No
  • RoHS Status
    ROHS3 Compliant
  • Lead Free
    Lead Free
Description
IRFB4110PBF Description

The IRFB4110PBF is a 100V single N-channel HEXFET? Power MOSFET with extremely low on-resistance per silicon area and fast switching performance using Trench MOSFET technology. Infineon IRFB4110PBF is suitable for high efficiency synchronous rectification in SMPS, uninterruptible power supply, high speed power switching, hard switched and high frequency circuits.

IRFB4110PBF Features

Product qualification according to JEDEC standard
Silicon optimized for applications switching below Softer body-diode compared to previous silicon generation
Wide portfolio available
Industry standard through-hole power package
High-current rating

IRFB4110PBF Applications

SMPS
DC motor drives
Battery powered applications
UPS
Solar power inverter
IRFB4110PBF More Descriptions
MOSFET, Power;N-Ch;VDSS 100V;RDS(ON) 3.7 Milliohms;ID 180A;TO-220AB;PD 370W
100V Single N-Channel HEXFET Power MOSFET in a TO-220AB package, TO220-3, RoHSInfineon SCT
Single N-Channel 100 V 4.5 mOhm 210 nC HEXFET® Power Mosfet - TO-220-3
Transistor MOSFET N-Ch. 180A/100V TO220 IRFB 4110 PBF
Trans MOSFET N-CH 100V 180A 3-Pin(3 Tab) TO-220AB - Rail/Tube
MOSFET Operating temperature: -55...175 °C Housing type: TO-220AB Polarity: N Power dissipation: 370 W
Power Field-Effect Transistor, 120A I(D), 100V, 0.0045ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
Benefits: RoHS Compliant | Target Applications: AC-DC; Battery Operated Drive; Consumer Full-Bridge; Full-Bridge; Push-Pull
N Channel Mosfet, 100V, 180A, To-220Ab; Channel Type:N Channel; Drain Source Voltage Vds:100V; Continuous Drain Current Id:180A; Transistor Mounting:Through Hole; Rds(On) Test Voltage:10V; Gate Source Threshold Voltage Max:4V; Msl:- Rohs Compliant: Yes |Infineon IRFB4110PBF.
Product Comparison
The three parts on the right have similar specifications to IRFB4110PBF.
  • Image
    Part Number
    Manufacturer
    Factory Lead Time
    Contact Plating
    Mount
    Mounting Type
    Package / Case
    Number of Pins
    Transistor Element Material
    Operating Temperature
    Packaging
    Series
    Published
    Part Status
    Moisture Sensitivity Level (MSL)
    Number of Terminations
    Termination
    ECCN Code
    Subcategory
    Voltage - Rated DC
    Technology
    Current Rating
    Number of Elements
    Power Dissipation-Max
    Element Configuration
    Operating Mode
    Power Dissipation
    Case Connection
    Turn On Delay Time
    FET Type
    Transistor Application
    Rds On (Max) @ Id, Vgs
    Vgs(th) (Max) @ Id
    Input Capacitance (Ciss) (Max) @ Vds
    Current - Continuous Drain (Id) @ 25°C
    Gate Charge (Qg) (Max) @ Vgs
    Rise Time
    Drive Voltage (Max Rds On,Min Rds On)
    Vgs (Max)
    Fall Time (Typ)
    Turn-Off Delay Time
    Continuous Drain Current (ID)
    Threshold Voltage
    JEDEC-95 Code
    Gate to Source Voltage (Vgs)
    Drain-source On Resistance-Max
    Drain to Source Breakdown Voltage
    Pulsed Drain Current-Max (IDM)
    Dual Supply Voltage
    Recovery Time
    Nominal Vgs
    Height
    Length
    Width
    REACH SVHC
    Radiation Hardening
    RoHS Status
    Lead Free
    Surface Mount
    Terminal Position
    Peak Reflow Temperature (Cel)
    Time@Peak Reflow Temperature-Max (s)
    JESD-30 Code
    Qualification Status
    Configuration
    Drain to Source Voltage (Vdss)
    Drain Current-Max (Abs) (ID)
    DS Breakdown Voltage-Min
    Supplier Device Package
    Input Capacitance
    Rds On Max
    Weight
    Number of Channels
    View Compare
  • IRFB4110PBF
    IRFB4110PBF
    Infineon Technologies
    12 Weeks
    Tin
    Through Hole
    Through Hole
    TO-220-3
    3
    SILICON
    -55°C~175°C TJ
    Tube
    HEXFET®
    2008
    Active
    1 (Unlimited)
    3
    Through Hole
    EAR99
    FET General Purpose Power
    100V
    MOSFET (Metal Oxide)
    180A
    1
    370W Tc
    Single
    ENHANCEMENT MODE
    370W
    DRAIN
    25 ns
    N-Channel
    SWITCHING
    4.5m Ω @ 75A, 10V
    4V @ 250μA
    9620pF @ 50V
    120A Tc
    210nC @ 10V
    67ns
    10V
    ±20V
    88 ns
    78 ns
    180A
    4V
    TO-220AB
    20V
    0.0045Ohm
    100V
    670A
    100V
    75 ns
    4 V
    16.51mm
    10.66mm
    4.826mm
    No SVHC
    No
    ROHS3 Compliant
    Lead Free
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • IRFBA1404P
    IRFBA1404P
    Infineon Technologies
    -
    -
    -
    Through Hole
    TO-273AA
    -
    SILICON
    -40°C~175°C TJ
    Tube
    HEXFET®
    2010
    Obsolete
    1 (Unlimited)
    3
    -
    EAR99
    -
    -
    MOSFET (Metal Oxide)
    -
    1
    300W Tc
    -
    ENHANCEMENT MODE
    -
    DRAIN
    -
    N-Channel
    SWITCHING
    3.7m Ω @ 95A, 10V
    4V @ 250μA
    7360pF @ 25V
    206A Tc
    200nC @ 10V
    -
    10V
    ±20V
    -
    -
    -
    -
    -
    -
    0.0037Ohm
    -
    650A
    -
    -
    -
    -
    -
    -
    -
    -
    Non-RoHS Compliant
    -
    NO
    SINGLE
    NOT SPECIFIED
    NOT SPECIFIED
    R-PSIP-T3
    Not Qualified
    SINGLE WITH BUILT-IN DIODE
    40V
    95A
    40V
    -
    -
    -
    -
    -
    IRFB4110PBF vs IRFBA1404P
  • IRFB9N30A
    IRFB9N30A
    Vishay Siliconix
    -
    -
    Through Hole
    Through Hole
    TO-220-3
    -
    -
    -55°C~150°C TJ
    Tube
    -
    2009
    Obsolete
    1 (Unlimited)
    -
    -
    -
    -
    300V
    MOSFET (Metal Oxide)
    9.3A
    -
    96W Tc
    -
    -
    -
    -
    -
    N-Channel
    -
    450mOhm @ 5.6A, 10V
    4V @ 250μA
    920pF @ 25V
    9.3A Tc
    33nC @ 10V
    25ns
    10V
    ±30V
    -
    -
    9.3A
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    Non-RoHS Compliant
    Contains Lead
    -
    -
    -
    -
    -
    -
    -
    300V
    -
    -
    TO-220AB
    920pF
    450 mΩ
    -
    -
    IRFB4110PBF vs IRFB9N30A
  • IRFB7787PBF
    IRFB7787PBF
    Infineon Technologies
    12 Weeks
    -
    Through Hole
    Through Hole
    TO-220-3
    3
    -
    -55°C~175°C TJ
    Tube
    HEXFET®, StrongIRFET™
    2001
    Active
    1 (Unlimited)
    -
    -
    EAR99
    -
    -
    MOSFET (Metal Oxide)
    -
    -
    125W Tc
    Single
    -
    -
    -
    11 ns
    N-Channel
    -
    8.4m Ω @ 46A, 10V
    3.7V @ 100μA
    4020pF @ 25V
    76A Tc
    109nC @ 10V
    48ns
    6V 10V
    ±20V
    39 ns
    51 ns
    76A
    -
    -
    20V
    -
    -
    -
    -
    -
    -
    16.51mm
    10.67mm
    4.83mm
    No SVHC
    -
    ROHS3 Compliant
    Lead Free
    -
    -
    NOT SPECIFIED
    NOT SPECIFIED
    -
    -
    -
    75V
    -
    -
    -
    -
    -
    6.000006g
    1
    IRFB4110PBF vs IRFB7787PBF
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS
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