Infineon Technologies IRFB3307PBF
- Part Number:
- IRFB3307PBF
- Manufacturer:
- Infineon Technologies
- Ventron No:
- 2480453-IRFB3307PBF
- Description:
- MOSFET N-CH 75V 130A TO-220AB
- ECAD Model:
-
- Datasheet:
- IRFB3307PBF
Infineon Technologies IRFB3307PBF technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies IRFB3307PBF.
- Factory Lead Time12 Weeks
- MountThrough Hole
- Mounting TypeThrough Hole
- Package / CaseTO-220-3
- Number of Pins3
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~175°C TJ
- PackagingTube
- SeriesHEXFET®
- Published2004
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- ECCN CodeEAR99
- Resistance6.3MOhm
- SubcategoryFET General Purpose Power
- Voltage - Rated DC75V
- TechnologyMOSFET (Metal Oxide)
- Current Rating130A
- Lead Pitch2.54mm
- Number of Elements1
- Power Dissipation-Max200W Tc
- Element ConfigurationSingle
- Operating ModeENHANCEMENT MODE
- Power Dissipation200W
- Case ConnectionDRAIN
- Turn On Delay Time26 ns
- FET TypeN-Channel
- Transistor ApplicationSWITCHING
- Rds On (Max) @ Id, Vgs6.3m Ω @ 75A, 10V
- Vgs(th) (Max) @ Id4V @ 150μA
- Input Capacitance (Ciss) (Max) @ Vds5150pF @ 50V
- Current - Continuous Drain (Id) @ 25°C130A Tc
- Gate Charge (Qg) (Max) @ Vgs180nC @ 10V
- Rise Time120ns
- Drive Voltage (Max Rds On,Min Rds On)10V
- Vgs (Max)±20V
- Fall Time (Typ)63 ns
- Turn-Off Delay Time51 ns
- Continuous Drain Current (ID)130A
- Threshold Voltage4V
- JEDEC-95 CodeTO-220AB
- Gate to Source Voltage (Vgs)20V
- Drain Current-Max (Abs) (ID)75A
- Drain to Source Breakdown Voltage75V
- Dual Supply Voltage75V
- Avalanche Energy Rating (Eas)270 mJ
- Nominal Vgs4 V
- Height4.82mm
- Length10.6426mm
- Width4.826mm
- REACH SVHCNo SVHC
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
IRFB3307PBF Description
Infineon Technologies manufactures the IRFB3307PBF HEXFET Power MOSFET. It can be utilized in a variety of applications, including synchronous rectification in SMPS, uninterruptible power supplies, high-speed power switching, hard switched, and high-frequency circuits.
IRFB3307PBF Features
Enhancement mode
Fast switching speed
100% avalanche tested
Static drain-source on-resistance: RDS(on)≤6.3m?
Minimum Lot-to-Lot variations for robust device performance and reliable operation
IRFB3307PBF Applications
High-Speed Power Switching
Uninterruptible Power Supply
Hard Switched and High-Frequency Circuits
High-Efficiency Synchronous Rectification in SMPS
Infineon Technologies manufactures the IRFB3307PBF HEXFET Power MOSFET. It can be utilized in a variety of applications, including synchronous rectification in SMPS, uninterruptible power supplies, high-speed power switching, hard switched, and high-frequency circuits.
IRFB3307PBF Features
Enhancement mode
Fast switching speed
100% avalanche tested
Static drain-source on-resistance: RDS(on)≤6.3m?
Minimum Lot-to-Lot variations for robust device performance and reliable operation
IRFB3307PBF Applications
High-Speed Power Switching
Uninterruptible Power Supply
Hard Switched and High-Frequency Circuits
High-Efficiency Synchronous Rectification in SMPS
IRFB3307PBF More Descriptions
MOSFET, Power;N-Ch;VDSS 75V;RDS(ON) 5 Milliohms;ID 130A;TO-220AB;PD 250W;gFS 98S
Single N-Channel 75 V 6.3 mOhm 180 nC HEXFET® Power Mosfet - TO-220-3
75V Single N-Channel HEXFET Power MOSFET in a TO-220AB package, TO220-3, RoHSInfineon SCT
Benefits: RoHS Compliant; Industry-leading quality; Fast Switching; 175C Operating Temperature | Target Applications: AC-DC
MOSFET, N, 75V, TO-220; Transistor Polarity:N Channel; Continuous Drain Current Id:130A; Drain Source Voltage Vds:75V; On Resistance Rds(on):5mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V; Power Dissipation Pd:250W; Operating Temperature Range:-55°C to 175°C; Transistor Case Style:TO-220AB; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:120A; Current Temperature:25°C; Full Power Rating Temperature:25°C; Lead Spacing:2.54mm; No. of Transistors:1; Package / Case:TO-220AB; Pin Format:1 g; 2 d/tab; 3 s; Power Dissipation Pd:250W; Power Dissipation Pd:250W; Pulse Current Idm:510A; Termination Type:Through Hole; Voltage Vds Typ:75V; Voltage Vgs Max:20V; Voltage Vgs Rds on Measurement:10V
Single N-Channel 75 V 6.3 mOhm 180 nC HEXFET® Power Mosfet - TO-220-3
75V Single N-Channel HEXFET Power MOSFET in a TO-220AB package, TO220-3, RoHSInfineon SCT
Benefits: RoHS Compliant; Industry-leading quality; Fast Switching; 175C Operating Temperature | Target Applications: AC-DC
MOSFET, N, 75V, TO-220; Transistor Polarity:N Channel; Continuous Drain Current Id:130A; Drain Source Voltage Vds:75V; On Resistance Rds(on):5mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V; Power Dissipation Pd:250W; Operating Temperature Range:-55°C to 175°C; Transistor Case Style:TO-220AB; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:120A; Current Temperature:25°C; Full Power Rating Temperature:25°C; Lead Spacing:2.54mm; No. of Transistors:1; Package / Case:TO-220AB; Pin Format:1 g; 2 d/tab; 3 s; Power Dissipation Pd:250W; Power Dissipation Pd:250W; Pulse Current Idm:510A; Termination Type:Through Hole; Voltage Vds Typ:75V; Voltage Vgs Max:20V; Voltage Vgs Rds on Measurement:10V
The three parts on the right have similar specifications to IRFB3307PBF.
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ImagePart NumberManufacturerFactory Lead TimeMountMounting TypePackage / CaseNumber of PinsTransistor Element MaterialOperating TemperaturePackagingSeriesPublishedPart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeResistanceSubcategoryVoltage - Rated DCTechnologyCurrent RatingLead PitchNumber of ElementsPower Dissipation-MaxElement ConfigurationOperating ModePower DissipationCase ConnectionTurn On Delay TimeFET TypeTransistor ApplicationRds On (Max) @ Id, VgsVgs(th) (Max) @ IdInput Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25°CGate Charge (Qg) (Max) @ VgsRise TimeDrive Voltage (Max Rds On,Min Rds On)Vgs (Max)Fall Time (Typ)Turn-Off Delay TimeContinuous Drain Current (ID)Threshold VoltageJEDEC-95 CodeGate to Source Voltage (Vgs)Drain Current-Max (Abs) (ID)Drain to Source Breakdown VoltageDual Supply VoltageAvalanche Energy Rating (Eas)Nominal VgsHeightLengthWidthREACH SVHCRadiation HardeningRoHS StatusLead FreeSupplier Device PackageTerminationMax Operating TemperatureMin Operating TemperatureDrain to Source Voltage (Vdss)Input CapacitanceDrain to Source ResistanceRds On MaxWeightPeak Reflow Temperature (Cel)Time@Peak Reflow Temperature-Max (s)Number of ChannelsContact PlatingPulsed Drain Current-Max (IDM)View Compare
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IRFB3307PBF12 WeeksThrough HoleThrough HoleTO-220-33SILICON-55°C~175°C TJTubeHEXFET®2004Active1 (Unlimited)3EAR996.3MOhmFET General Purpose Power75VMOSFET (Metal Oxide)130A2.54mm1200W TcSingleENHANCEMENT MODE200WDRAIN26 nsN-ChannelSWITCHING6.3m Ω @ 75A, 10V4V @ 150μA5150pF @ 50V130A Tc180nC @ 10V120ns10V±20V63 ns51 ns130A4VTO-220AB20V75A75V75V270 mJ4 V4.82mm10.6426mm4.826mmNo SVHCNoROHS3 CompliantLead Free--------------- -
-Through HoleThrough HoleTO-220-33--40°C~175°C TJTubeHEXFET®2007Obsolete1 (Unlimited)-----MOSFET (Metal Oxide)--1370W TcSingle-370W-31 nsN-Channel-37mOhm @ 28A, 10V5V @ 250μA5510pF @ 25V56A Tc170nC @ 10V-10V±30V-51 ns56A5V-30V-230V276V-5 V16.51mm10.6426mm4.82mmNo SVHCNoRoHS Compliant-TO-220ABThrough Hole175°C-40°C230V5.51nF37mOhm37 mΩ------
-
12 WeeksThrough HoleThrough HoleTO-220-33--55°C~175°C TJTubeHEXFET®, StrongIRFET™2001Active1 (Unlimited)-EAR99---MOSFET (Metal Oxide)---125W TcSingle---11 nsN-Channel-8.4m Ω @ 46A, 10V3.7V @ 100μA4020pF @ 25V76A Tc109nC @ 10V48ns6V 10V±20V39 ns51 ns76A--20V-----16.51mm10.67mm4.83mmNo SVHC-ROHS3 CompliantLead Free----75V---6.000006gNOT SPECIFIEDNOT SPECIFIED1--
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14 WeeksThrough HoleThrough HoleTO-220-33SILICON-55°C~175°C TJTubeHEXFET®2000Not For New Designs1 (Unlimited)3EAR99100MOhmFET General Purpose Power200VMOSFET (Metal Oxide)24A-13.8W Ta 170W TcSingleENHANCEMENT MODE170WDRAIN14 nsN-ChannelSWITCHING100m Ω @ 14A, 10V5.5V @ 250μA1960pF @ 25V24A Tc86nC @ 10V32ns10V±30V16 ns26 ns24A5.5VTO-220AB30V-200V200V250 mJ5.5 V4.69mm10.54mm4.699mmNo SVHCNoROHS3 CompliantContains Lead, Lead Free-Through Hole----------Tin96A
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