Infineon Technologies IRFB3306PBF

Name: IRFB3306PBF
Brand: Infineon Technologies
SKU: 2484965-IRFB3306PBF
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: IRFB3306PBF

Manufacturer:: Infineon Technologies

Ventron No:: 2484965-IRFB3306PBF

Description:: MOSFET N-CH 60V 120A TO-220AB

ECAD Model:

Datasheet:: IRFB3306PBF

Specifications

Infineon Technologies IRFB3306PBF technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies IRFB3306PBF.

Factory Lead Time
12 Weeks
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-220-3
Number of Pins
3
Transistor Element Material
SILICON
Operating Temperature
-55°C~175°C TJ
Packaging
Tube
Series
HEXFET®
Published
2011
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Resistance
4.2MOhm
Subcategory
FET General Purpose Power
Voltage - Rated DC
60V
Technology
MOSFET (Metal Oxide)
Current Rating
160A
Number of Elements
1
Number of Channels
1
Power Dissipation-Max
230W Tc
Element Configuration
Single
Operating Mode
ENHANCEMENT MODE
Power Dissipation
230W
Case Connection
DRAIN
Turn On Delay Time
15 ns
FET Type
N-Channel
Transistor Application
SWITCHING
Rds On (Max) @ Id, Vgs
4.2m Ω @ 75A, 10V
Vgs(th) (Max) @ Id
4V @ 150μA
Input Capacitance (Ciss) (Max) @ Vds
4520pF @ 50V
Current - Continuous Drain (Id) @ 25°C
120A Tc
Gate Charge (Qg) (Max) @ Vgs
120nC @ 10V
Rise Time
76ns
Drive Voltage (Max Rds On,Min Rds On)
10V
Vgs (Max)
±20V
Fall Time (Typ)
77 ns
Turn-Off Delay Time
40 ns
Continuous Drain Current (ID)
160A
Threshold Voltage
4V
JEDEC-95 Code
TO-220AB
Gate to Source Voltage (Vgs)
20V
Drain to Source Breakdown Voltage
60V
Pulsed Drain Current-Max (IDM)
620A
Recovery Time
31 ns
Max Junction Temperature (Tj)
175°C
Height
19.8mm
Length
10.668mm
Width
4.826mm
REACH SVHC
No SVHC
Radiation Hardening
No
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free

Description

IRFB3306PBF Overview
Input capacitance, CI, is defined as the capacitance between two input terminals of an op amp with one input grounded, and the input capacitance of this device is 4520pF @ 50V.This device has a continuous drain current (ID) of [160A], which is its maximum continuous current.At a given drain-source breakdown voltage, a specified value of ID will flow. With VGS=60V, the drain-source breakdown voltage is 60V.The turn-off delay time of a device is the time it takes to charge its input capacitance before drain current can flow. The turn-off delay time of a device is 40 ns.A maximum pulsed drain current of 620A is the maximum peak drain current rated for this device.During turn-on, the input capacitance of the device is charged before drain current conduction starts, so its delay time is 15 ns.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 20V volts.Electrical devices have threshold voltages at which their operations become active, and this transistor has a threshold voltage of 4V.Its overall power consumption can be reduced by using drive voltage (10V).

IRFB3306PBF Features
a continuous drain current (ID) of 160A
a drain-to-source breakdown voltage of 60V voltage
the turn-off delay time is 40 ns
based on its rated peak drain current 620A.
a threshold voltage of 4V

IRFB3306PBF Applications
There are a lot of Infineon Technologies
IRFB3306PBF applications of single MOSFETs transistors.

Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit

IRFB3306PBF More Descriptions

IRFB3306PBF N-channel MOSFET Transistor, 160 A, 60 V, 3-Pin TO-220AB
MOSFET N-CH 60V 120A TO-220AB / Trans MOSFET N-CH Si 60V 160A 3-Pin(3 Tab) TO-220AB Tube
INFINEON THT MOSFET NFET 60V 120A 4,2mΩ 175°C TO-220 IRFB3306PBF
Single N-Channel 60 V 4.2 mOhm 85 nC HEXFET® Power Mosfet - TO-220-3
Power Field-Effect Transistor, 160A I(D), 60V, 0.0042ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
Benefits: RoHS Compliant | Target Applications: AC-DC; Battery Operated Drive; Consumer Full-Bridge; Full-Bridge; Push-Pull
MOSFET, N, 60V, TO-220AB; Transistor Polarity:N Channel; Continuous Drain Current Id:160A; Drain Source Voltage Vds:60V; On Resistance Rds(on):4.2mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V; Power Dissipation Pd:230W; Operating Temperature Range:-55°C to 175°C; Transistor Case Style:TO-220AB; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Base Number:3306; Current Id Max:120A; N-channel Gate Charge:85nC; Package / Case:TO-220AB; Power Dissipation Pd:230W; Power Dissipation Pd:230mW; Pulse Current Idm:620A; Termination Type:Through Hole; Voltage Vds Typ:60V; Voltage Vgs Max:20V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:4V; Voltage Vgs th Min:2V

Product Comparison

The three parts on the right have similar specifications to IRFB3306PBF.

Image

Part Number

Manufacturer

Factory Lead Time

Mount

Mounting Type

Package / Case

Number of Pins

Transistor Element Material

Operating Temperature

Packaging

Series

Published

Part Status

Moisture Sensitivity Level (MSL)

Number of Terminations

ECCN Code

Resistance

Subcategory

Voltage - Rated DC

Technology

Current Rating

Number of Elements

Number of Channels

Power Dissipation-Max

Element Configuration

Operating Mode

Power Dissipation

Case Connection

Turn On Delay Time

FET Type

Transistor Application

Rds On (Max) @ Id, Vgs

Vgs(th) (Max) @ Id

Input Capacitance (Ciss) (Max) @ Vds

Current - Continuous Drain (Id) @ 25°C

Gate Charge (Qg) (Max) @ Vgs

Rise Time

Drive Voltage (Max Rds On,Min Rds On)

Vgs (Max)

Fall Time (Typ)

Turn-Off Delay Time

Continuous Drain Current (ID)

Threshold Voltage

JEDEC-95 Code

Gate to Source Voltage (Vgs)

Drain to Source Breakdown Voltage

Pulsed Drain Current-Max (IDM)

Recovery Time

Max Junction Temperature (Tj)

Height

Length

Width

REACH SVHC

Radiation Hardening

RoHS Status

Lead Free

Supplier Device Package

Termination

Max Operating Temperature

Min Operating Temperature

Drain to Source Voltage (Vdss)

Dual Supply Voltage

Input Capacitance

Drain to Source Resistance

Rds On Max

Nominal Vgs

Surface Mount

Terminal Position

Peak Reflow Temperature (Cel)

Time@Peak Reflow Temperature-Max (s)

JESD-30 Code

Qualification Status

Configuration

Drain Current-Max (Abs) (ID)

Drain-source On Resistance-Max

DS Breakdown Voltage-Min

View Compare
IRFB3306PBF

Infineon Technologies

12 Weeks

Through Hole

Through Hole

TO-220-3

3

SILICON

-55°C~175°C TJ

Tube

HEXFET®

2011

Active

1 (Unlimited)

3

EAR99

4.2MOhm

FET General Purpose Power

60V

MOSFET (Metal Oxide)

160A

1

1

230W Tc

Single

ENHANCEMENT MODE

230W

DRAIN

15 ns

N-Channel

SWITCHING

4.2m Ω @ 75A, 10V

4V @ 150μA

4520pF @ 50V

120A Tc

120nC @ 10V

76ns

10V

±20V

77 ns

40 ns

160A

4V

TO-220AB

20V

60V

620A

31 ns

175°C

19.8mm

10.668mm

4.826mm

No SVHC

No

ROHS3 Compliant

Lead Free

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-
IRFB4233PBF

Infineon Technologies

-

Through Hole

Through Hole

TO-220-3

3

-

-40°C~175°C TJ

Tube

HEXFET®

2007

Obsolete

1 (Unlimited)

-

-

-

-

-

MOSFET (Metal Oxide)

-

1

-

370W Tc

Single

-

370W

-

31 ns

N-Channel

-

37mOhm @ 28A, 10V

5V @ 250μA

5510pF @ 25V

56A Tc

170nC @ 10V

-

10V

±30V

-

51 ns

56A

5V

-

30V

230V

-

-

-

16.51mm

10.6426mm

4.82mm

No SVHC

No

RoHS Compliant

-

TO-220AB

Through Hole

175°C

-40°C

230V

276V

5.51nF

37mOhm

37 mΩ

5 V

-

-

-

-

-

-

-

-

-

-

IRFB3306PBF vs IRFB4233PBF
IRFBA1404P

Infineon Technologies

-

-

Through Hole

TO-273AA

-

SILICON

-40°C~175°C TJ

Tube

HEXFET®

2010

Obsolete

1 (Unlimited)

3

EAR99

-

-

-

MOSFET (Metal Oxide)

-

1

-

300W Tc

-

ENHANCEMENT MODE

-

DRAIN

-

N-Channel

SWITCHING

3.7m Ω @ 95A, 10V

4V @ 250μA

7360pF @ 25V

206A Tc

200nC @ 10V

-

10V

±20V

-

-

-

-

-

-

-

650A

-

-

-

-

-

-

-

Non-RoHS Compliant

-

-

-

-

-

40V

-

-

-

-

-

NO

SINGLE

NOT SPECIFIED

NOT SPECIFIED

R-PSIP-T3

Not Qualified

SINGLE WITH BUILT-IN DIODE

95A

0.0037Ohm

40V

IRFB3306PBF vs IRFBA1404P
IRFB4310ZPBF

Infineon Technologies

12 Weeks

Through Hole

Through Hole

TO-220-3

3

SILICON

-55°C~175°C TJ

Tube

HEXFET®

2008

Active

1 (Unlimited)

3

EAR99

6MOhm

FET General Purpose Power

-

MOSFET (Metal Oxide)

-

1

-

250W Tc

Single

ENHANCEMENT MODE

250W

DRAIN

20 ns

N-Channel

SWITCHING

6m Ω @ 75A, 10V

4V @ 150μA

6860pF @ 50V

120A Tc

170nC @ 10V

60ns

10V

±20V

57 ns

55 ns

140A

4V

TO-220AB

20V

100V

560A

40 ns

-

9.017mm

10.668mm

4.826mm

No SVHC

No

ROHS3 Compliant

Lead Free

-

Through Hole

-

-

-

100V

-

-

-

4 V

-

-

-

-

-

-

-

-

-

-

IRFB3306PBF vs IRFB4310ZPBF

Certification

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IRFB3306PBF Specification

Part Number	Manufacturers	Description	Stock	Price
IRFB3306PBF DISTI #	Infineon Technologies AG	Trans MOSFET N-CH Si 60V 160A 3-Pin(3 Tab) TO-220A	4463	600 $0.6421 700 $0.6191 1300 $0.597 3000 $0.5769 6000 $0.5726
IRFB3306PBF DISTI #	Infineon Technologies AG	MOSFET N-CH 60V 120A TO-220AB RoHS: Compliant	1989	1 $2.09 50 $1.7082 100 $1.5484 500 $1.22882 1000 $1.03709
IRFB3306PBF DISTI #	Infineon Technologies AG	Trans MOSFET N-CH Si 60V 160A 3-Pin(3 Tab) TO-220A RoHS: Compliant	170	5 $0.89 10 $0.83 50 $0.708
IRFB3306PBF DISTI #	Infineon Technologies AG	Trans MOSFET N-CH Si 60V 160A 3-Pin(3 Tab) TO-220A RoHS: Compliant	4463	5 $1.67 25 $1.36 100 $1.11 500 $1.02 1000 $0.787 2000 $0.73
IRFB3306PBF DISTI #	Infineon Technologies AG	Trans MOSFET N-CH Si 60V 160A 3-Pin(3 Tab) TO-220A	1199	1 $1.3655 10 $1.1895 100 $1.0046 500 $0.8895 1000 $0.7206 2000 $0.6575
IRFB3306PBF DISTI #	Infineon Technologies AG	Trans MOSFET N-CH 60V 160A 3-Pin(3 Tab) TO-220AB ( RoHS: Compliant	1000	1000 $0.72008 2000 $0.69048 3000 $0.68115 5000 $0.65462 10000 $0.64622 25000 $0.63007 50000 $0.6147
IRFB3306PBF DISTI #	Infineon Technologies AG	Trans MOSFET N-CH 60V 160A 3-Pin(3 Tab) TO-220AB - RoHS: Compliant	550	600 $0.6689 700 $0.6449 1300 $0.6219 3000 $0.6009 6000 $0.5899
IRFB3306PBF DISTI #	Infineon Technologies AG	Trans MOSFET N-CH 60V 160A 3-Pin(3 Tab) TO-220AB ( RoHS: Compliant	50	1 $0.9869 10 $0.8769 25 $0.7899 50 $0.7179 100 $0.6579 500 $0.6069 1000 $0.5639
IRFB3306PBF DISTI #	Infineon Technologies AG	MOSFET, N, 60V, TO-220AB, Transistor Polarity:N C	239	1 $1.52 10 $1.29 100 $1.04 500 $0.958 1000 $0.858 2500 $0.697 5000 $0.674
IRFB3306PBF DISTI #	Infineon Technologies AG	MOSFET, N Ch., 60V, 160A, 4.2 MOHM, 85 NC QG, RoHS: Compliant	0	1 $3.14 10 $2.77 100 $2.42 500 $2.1 1000 $1.85
IRFB3306PBF DISTI #	Infineon Technologies AG	MOSFET MOSFT 60V 160A 4.2mOhm 85nC Qg RoHS: Compliant	1844	1 $1.71 10 $1.46 100 $1.17 500 $1.02 1000 $0.843 2000 $0.785
IRFB3306PBF DISTI #	Infineon Technologies AG	MOSFET N-CHANNEL 60V 160A HEXFET TO220AB, TU	10644	26 $0.875
IRFB3306PBF DISTI #	Infineon Technologies AG	MOSFET N-CHANNEL 60V 160A HEXFET TO220AB, TU	1700	50 $1.01 250 $0.789 1000 $0.567 2500 $0.528
IRFB3306PBF DISTI #	Infineon Technologies AG	MOSFET N-CHANNEL 60V 160A HEXFET TO220AB, PK	180	2 $1.245 26 $0.875
IRFB3306PBF DISTI #	Infineon Technologies AG	Transistor: N-MOSFET, unipolar, 60V, 160A, 230	448	1 $1.27 3 $1.16 10 $0.94 100 $0.83
IRFB3306PBF DISTI #	Infineon Technologies AG	N-Ch 60V 120A 230W 0,0042R TO220AB RoHS: Compliant	1090	10 $0.9475 50 $0.7075 200 $0.6475 500 $0.6235
IRFB3306PBF DISTI #	Infineon Technologies AG	INSTOCK	621
IRFB3306PBF DISTI #	INFINEON/IR	TO-220AB RoHS: Compliant	1440	950 $0.7429 1440 $0.6933
IRFB3306PBF DISTI #	Infineon Technologies AG	PowerField-EffectTransistor,173AI(D),60V,0.0033ohm RoHS: Compliant	108319	150 $1.6 108319 $1.45
IRFB3306PBF DISTI #	Infineon Technologies AG	60V,4.2m,160A,N-Channel Power MOSFET	500	1 $1.25 100 $1.04 500 $0.92 1000 $0.9
IRFB3306PBF DISTI #	Infineon Technologies AG	MOSFET, N, 60V, TO-220AB RoHS: Compliant	239	1 $2.71 10 $2.32 100 $1.85 500 $1.62 1000 $1.34 2500 $1.24
IRFB3306PBF DISTI #	Infineon Technologies AG	MOSFET, N, 60V, TO-220AB RoHS: Compliant	489	5 $1.21 25 $0.884 100 $0.841 250 $0.797 500 $0.78

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Infineon Technologies IRFB3306PBF

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