Infineon Technologies IRFB3077PBF

Name: IRFB3077PBF
Brand: Infineon Technologies
SKU: 2848747-IRFB3077PBF
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: IRFB3077PBF

Manufacturer:: Infineon Technologies

Ventron No:: 2848747-IRFB3077PBF

Description:: MOSFET N-CH 75V 120A TO-220AB

ECAD Model:

Datasheet:: IRFB3077PBF

Specifications

Infineon Technologies IRFB3077PBF technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies IRFB3077PBF.

Factory Lead Time
12 Weeks
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-220-3
Number of Pins
3
Transistor Element Material
SILICON
Operating Temperature
-55°C~175°C TJ
Packaging
Tube
Series
HEXFET®
Published
2006
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
Termination
Through Hole
ECCN Code
EAR99
Subcategory
FET General Purpose Power
Voltage - Rated DC
75V
Technology
MOSFET (Metal Oxide)
Current Rating
210A
Number of Elements
1
Power Dissipation-Max
370W Tc
Element Configuration
Single
Operating Mode
ENHANCEMENT MODE
Power Dissipation
370W
Case Connection
DRAIN
Turn On Delay Time
25 ns
FET Type
N-Channel
Transistor Application
SWITCHING
Rds On (Max) @ Id, Vgs
3.3m Ω @ 75A, 10V
Vgs(th) (Max) @ Id
4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds
9400pF @ 50V
Current - Continuous Drain (Id) @ 25°C
120A Tc
Gate Charge (Qg) (Max) @ Vgs
220nC @ 10V
Rise Time
87ns
Drive Voltage (Max Rds On,Min Rds On)
10V
Vgs (Max)
±20V
Fall Time (Typ)
95 ns
Turn-Off Delay Time
69 ns
Continuous Drain Current (ID)
210A
Threshold Voltage
4V
JEDEC-95 Code
TO-220AB
Gate to Source Voltage (Vgs)
20V
Drain to Source Breakdown Voltage
75V
Pulsed Drain Current-Max (IDM)
850A
Dual Supply Voltage
75V
Avalanche Energy Rating (Eas)
200 mJ
Recovery Time
63 ns
Nominal Vgs
4 V
Height
9.02mm
Length
10.668mm
Width
4.82mm
REACH SVHC
No SVHC
Radiation Hardening
No
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free

Description

IRFB3077PBF Overview
There is a phenomenon known as "avalanche break down", where avalanche energy is applied to the MOSFET and avalanche energy rating (Eas) is 200 mJ.Input capacitance, CI, is defined as the capacitance between two input terminals of an op amp with one input grounded, and the input capacitance of this device is 9400pF @ 50V.This device has a continuous drain current (ID) of [210A], which is its maximum continuous current.At a given drain-source breakdown voltage, a specified value of ID will flow. With VGS=75V, the drain-source breakdown voltage is 75V.The turn-off delay time of a device is the time it takes to charge its input capacitance before drain current can flow. The turn-off delay time of a device is 69 ns.A maximum pulsed drain current of 850A is the maximum peak drain current rated for this device.During turn-on, the input capacitance of the device is charged before drain current conduction starts, so its delay time is 25 ns.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 20V volts.Electrical devices have threshold voltages at which their operations become active, and this transistor has a threshold voltage of 4V.Its overall power consumption can be reduced by using drive voltage (10V).

IRFB3077PBF Features
the avalanche energy rating (Eas) is 200 mJ
a continuous drain current (ID) of 210A
a drain-to-source breakdown voltage of 75V voltage
the turn-off delay time is 69 ns
based on its rated peak drain current 850A.
a threshold voltage of 4V

IRFB3077PBF Applications
There are a lot of Infineon Technologies
IRFB3077PBF applications of single MOSFETs transistors.

Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit

IRFB3077PBF More Descriptions

MOSFET, Power;N-Ch;VDSS 75V;RDS(ON) 2.8Milliohms;ID 210A;TO-220AB;PD 370W;-55de
INFINEON THT MOSFET NFET 75V 120A 3,3mΩ 175°C TO-220 IRFB3077PBF
Single N-Channel 75 V 3.3 mOhm 220 nC 3HEXFET® Power Mosfet - TO-220-3
75V Single N-Channel HEXFET Power MOSFET in a TO-220AB package, TO220-3, RoHSInfineon SCT
Trans MOSFET N-CH 75V 210A 3-Pin(3 Tab) TO-220AB - Rail/Tube
MOSFET Operating temperature: -55...175 °C Housing type: TO-220AB Polarity: N Power dissipation: 370 W
Benefits: RoHS Compliant | Target Applications: AC-DC; Battery Operated Drive
Power Field-Effect Transistor, 120A I(D), 75V, 0.0033ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
N CH MOSFET, 75V, 210A, TO-220AB; Transi; Transistor Polarity:N Channel; Continuous Drain Current Id:210A; Drain Source Voltage Vds:75V; On Resistance Rds(on):3.3mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V; Power Dissipation Pd:370W; Transistor Case Style:TO-220AB; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Avalanche Single Pulse Energy Eas:240mJ; Capacitance Ciss Typ:9400pF; Cont Current Id @ 100°C:150A; Cont Current Id @ 25°C:210A; Current Id Max:210A; Package / Case:TO-220AB; Power Dissipation Pd:370W; Power Dissipation Pd:370W; Pulse Current Idm:850A; Rth:0.4; Termination Type:Through Hole; Voltage Vds:75V; Voltage Vds Typ:75V; Voltage Vgs Max:4V; Voltage Vgs Rds on Measurement:10V

Product Comparison

The three parts on the right have similar specifications to IRFB3077PBF.

Image

Part Number

Manufacturer

Factory Lead Time

Mount

Mounting Type

Package / Case

Number of Pins

Transistor Element Material

Operating Temperature

Packaging

Series

Published

Part Status

Moisture Sensitivity Level (MSL)

Number of Terminations

Termination

ECCN Code

Subcategory

Voltage - Rated DC

Technology

Current Rating

Number of Elements

Power Dissipation-Max

Element Configuration

Operating Mode

Power Dissipation

Case Connection

Turn On Delay Time

FET Type

Transistor Application

Rds On (Max) @ Id, Vgs

Vgs(th) (Max) @ Id

Input Capacitance (Ciss) (Max) @ Vds

Current - Continuous Drain (Id) @ 25°C

Gate Charge (Qg) (Max) @ Vgs

Rise Time

Drive Voltage (Max Rds On,Min Rds On)

Vgs (Max)

Fall Time (Typ)

Turn-Off Delay Time

Continuous Drain Current (ID)

Threshold Voltage

JEDEC-95 Code

Gate to Source Voltage (Vgs)

Drain to Source Breakdown Voltage

Pulsed Drain Current-Max (IDM)

Dual Supply Voltage

Avalanche Energy Rating (Eas)

Recovery Time

Nominal Vgs

Height

Length

Width

REACH SVHC

Radiation Hardening

RoHS Status

Lead Free

Supplier Device Package

Drain to Source Voltage (Vdss)

Input Capacitance

Rds On Max

Contact Plating

Resistance

Max Operating Temperature

Min Operating Temperature

Drain to Source Resistance

View Compare
IRFB3077PBF

Infineon Technologies

12 Weeks

Through Hole

Through Hole

TO-220-3

3

SILICON

-55°C~175°C TJ

Tube

HEXFET®

2006

Active

1 (Unlimited)

3

Through Hole

EAR99

FET General Purpose Power

75V

MOSFET (Metal Oxide)

210A

1

370W Tc

Single

ENHANCEMENT MODE

370W

DRAIN

25 ns

N-Channel

SWITCHING

3.3m Ω @ 75A, 10V

4V @ 250μA

9400pF @ 50V

120A Tc

220nC @ 10V

87ns

10V

±20V

95 ns

69 ns

210A

4V

TO-220AB

20V

75V

850A

75V

200 mJ

63 ns

4 V

9.02mm

10.668mm

4.82mm

No SVHC

No

ROHS3 Compliant

Lead Free

-

-

-

-

-

-

-

-

-

-
IRFB9N30A

Vishay Siliconix

-

Through Hole

Through Hole

TO-220-3

-

-

-55°C~150°C TJ

Tube

-

2009

Obsolete

1 (Unlimited)

-

-

-

-

300V

MOSFET (Metal Oxide)

9.3A

-

96W Tc

-

-

-

-

-

N-Channel

-

450mOhm @ 5.6A, 10V

4V @ 250μA

920pF @ 25V

9.3A Tc

33nC @ 10V

25ns

10V

±30V

-

-

9.3A

-

-

-

-

-

-

-

-

-

-

-

-

-

-

Non-RoHS Compliant

Contains Lead

TO-220AB

300V

920pF

450 mΩ

-

-

-

-

-

IRFB3077PBF vs IRFB9N30A
IRFB5620PBF

Infineon Technologies

12 Weeks

Through Hole

Through Hole

TO-220-3

3

-

-55°C~175°C TJ

Tube

-

2007

Active

1 (Unlimited)

-

Through Hole

-

-

-

MOSFET (Metal Oxide)

-

1

144W Tc

Single

-

144W

-

8.6 ns

N-Channel

-

72.5mOhm @ 15A, 10V

5V @ 100μA

1710pF @ 50V

25A Tc

38nC @ 10V

14.6ns

10V

±20V

9.9 ns

17.1 ns

25A

5V

-

20V

200V

-

200V

-

-

5 V

9.02mm

10.668mm

4.826mm

No SVHC

No

ROHS3 Compliant

Lead Free

TO-220AB

200V

1.71nF

72.5 mΩ

Tin

72.5MOhm

175°C

-55°C

72.5mOhm

IRFB3077PBF vs IRFB5620PBF
IRFB23N20DPBF

Infineon Technologies

14 Weeks

Through Hole

Through Hole

TO-220-3

3

SILICON

-55°C~175°C TJ

Tube

HEXFET®

2000

Not For New Designs

1 (Unlimited)

3

Through Hole

EAR99

FET General Purpose Power

200V

MOSFET (Metal Oxide)

24A

1

3.8W Ta 170W Tc

Single

ENHANCEMENT MODE

170W

DRAIN

14 ns

N-Channel

SWITCHING

100m Ω @ 14A, 10V

5.5V @ 250μA

1960pF @ 25V

24A Tc

86nC @ 10V

32ns

10V

±30V

16 ns

26 ns

24A

5.5V

TO-220AB

30V

200V

96A

200V

250 mJ

-

5.5 V

4.69mm

10.54mm

4.699mm

No SVHC

No

ROHS3 Compliant

Contains Lead, Lead Free

-

-

-

-

Tin

100MOhm

-

-

-

IRFB3077PBF vs IRFB23N20DPBF