Vishay Siliconix IRFB20N50KPBF
- Part Number:
- IRFB20N50KPBF
- Manufacturer:
- Vishay Siliconix
- Ventron No:
- 2479027-IRFB20N50KPBF
- Description:
- MOSFET N-CH 500V 20A TO-220AB
- Datasheet:
- IRFB20N50KPBF
Vishay Siliconix IRFB20N50KPBF technical specifications, attributes, parameters and parts with similar specifications to Vishay Siliconix IRFB20N50KPBF.
- Factory Lead Time11 Weeks
- MountThrough Hole
- Mounting TypeThrough Hole
- Package / CaseTO-220-3
- Number of Pins3
- Supplier Device PackageTO-220AB
- Weight6.000006g
- Operating Temperature-55°C~150°C TJ
- PackagingTube
- Published2014
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Resistance210mOhm
- Max Operating Temperature150°C
- Min Operating Temperature-55°C
- TechnologyMOSFET (Metal Oxide)
- Number of Elements1
- Number of Channels1
- Power Dissipation-Max280W Tc
- Element ConfigurationSingle
- Power Dissipation280W
- Turn On Delay Time22 ns
- FET TypeN-Channel
- Rds On (Max) @ Id, Vgs250mOhm @ 12A, 10V
- Vgs(th) (Max) @ Id5V @ 250μA
- Input Capacitance (Ciss) (Max) @ Vds2870pF @ 25V
- Current - Continuous Drain (Id) @ 25°C20A Tc
- Gate Charge (Qg) (Max) @ Vgs110nC @ 10V
- Rise Time74ns
- Drain to Source Voltage (Vdss)500V
- Drive Voltage (Max Rds On,Min Rds On)10V
- Vgs (Max)±30V
- Fall Time (Typ)33 ns
- Turn-Off Delay Time45 ns
- Continuous Drain Current (ID)20A
- Threshold Voltage5V
- Gate to Source Voltage (Vgs)30V
- Drain to Source Breakdown Voltage500V
- Input Capacitance2.87nF
- Drain to Source Resistance250mOhm
- Rds On Max250 mΩ
- Height9.01mm
- Length10.41mm
- Width4.7mm
- REACH SVHCUnknown
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
IRFB20N50KPBF Overview
Op amps with either input grounded have a fixed input capacitance parameter, CI, and this device has a 2870pF @ 25V maximal input capacitance.Devices can conduct a maximum continuous current of 3 amps in the drain area, so the continuous drain current (ID) for this device is 20A amps.In this device, the drain-source breakdown voltage is 500V and VGS=500V, so the drain-source breakdown voltage is 500V in this case.It is [45 ns] because it takes time to charge the input capacitance of the device before drain current conduction can begin.Single MOSFETs transistor is the resistance between the drain and source of a MOSFET when the gate-to-source voltage (VGS) is applied to bias the device to the on state, and Single MOSFETs transistor is 250mOhm.A turn-on delay time of 22 ns indicates the time it takes for the input capacitance of the device to charge before drain current conduction starts.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 30V.Normally, electrical devices are set to activate all of their operations at threshold voltages, and this transistor's threshold voltage is 5V.To operate this transistor, you will need a 500V drain to source voltage (Vdss).A device like this reduces its overall power consumption when it uses drive voltage (10V).
IRFB20N50KPBF Features
a continuous drain current (ID) of 20A
a drain-to-source breakdown voltage of 500V voltage
the turn-off delay time is 45 ns
single MOSFETs transistor is 250mOhm
a threshold voltage of 5V
a 500V drain to source voltage (Vdss)
IRFB20N50KPBF Applications
There are a lot of Vishay Siliconix
IRFB20N50KPBF applications of single MOSFETs transistors.
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
Op amps with either input grounded have a fixed input capacitance parameter, CI, and this device has a 2870pF @ 25V maximal input capacitance.Devices can conduct a maximum continuous current of 3 amps in the drain area, so the continuous drain current (ID) for this device is 20A amps.In this device, the drain-source breakdown voltage is 500V and VGS=500V, so the drain-source breakdown voltage is 500V in this case.It is [45 ns] because it takes time to charge the input capacitance of the device before drain current conduction can begin.Single MOSFETs transistor is the resistance between the drain and source of a MOSFET when the gate-to-source voltage (VGS) is applied to bias the device to the on state, and Single MOSFETs transistor is 250mOhm.A turn-on delay time of 22 ns indicates the time it takes for the input capacitance of the device to charge before drain current conduction starts.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 30V.Normally, electrical devices are set to activate all of their operations at threshold voltages, and this transistor's threshold voltage is 5V.To operate this transistor, you will need a 500V drain to source voltage (Vdss).A device like this reduces its overall power consumption when it uses drive voltage (10V).
IRFB20N50KPBF Features
a continuous drain current (ID) of 20A
a drain-to-source breakdown voltage of 500V voltage
the turn-off delay time is 45 ns
single MOSFETs transistor is 250mOhm
a threshold voltage of 5V
a 500V drain to source voltage (Vdss)
IRFB20N50KPBF Applications
There are a lot of Vishay Siliconix
IRFB20N50KPBF applications of single MOSFETs transistors.
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
IRFB20N50KPBF More Descriptions
Single N-Channel 500 V 0.29 Ohms Flange Mount Power Mosfet - TO-220AB
MOSFET N-CH 500V 20A TO-220AB | Siliconix / Vishay IRFB20N50KPBF
Trans MOSFET N-CH 500V 20A 3-Pin(3 Tab) TO-220AB
500V 20A 280W 250m´Î@10V12A 5V@250Ã×A N Channel TO-220(TO-220-3) MOSFETs ROHS
N Channel Mosfet, 500V, 20A, To-220Ab; Transistor Polarity:n Channel; Drain Source Voltage Vds:500V; Continuous Drain Current Id:20A; On Resistance Rds(On):0.21Ohm; Transistor Mounting:through Hole; Rds(On) Test Voltage Vgs:10V Rohs Compliant: No
Power Field-Effect Transistor, 20A I(D), 500V, 0.25ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
MOSFET, N, 500V, 20A, TO-220; Transistor Polarity: N Channel; Continuous Drain Current Id: 20A; Drain Source Voltage Vds: 500V; On Resistance Rds(on): 0.25ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 5V; Power Dissipation Pd: 280W; Transistor Case Style: TO-220AB; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: -; Current Id Max: 20A; Junction to Case Thermal Resistance A: 0.45°C/W; Operating Temperature Min: -55°C; Operating Temperature Range: -55°C to 150°C; Pulse Current Idm: 80A; Voltage Vds Typ: 500V; Voltage Vgs Max: 30V; Voltage Vgs Rds on Measurement: 10V
MOSFET N-CH 500V 20A TO-220AB | Siliconix / Vishay IRFB20N50KPBF
Trans MOSFET N-CH 500V 20A 3-Pin(3 Tab) TO-220AB
500V 20A 280W 250m´Î@10V12A 5V@250Ã×A N Channel TO-220(TO-220-3) MOSFETs ROHS
N Channel Mosfet, 500V, 20A, To-220Ab; Transistor Polarity:n Channel; Drain Source Voltage Vds:500V; Continuous Drain Current Id:20A; On Resistance Rds(On):0.21Ohm; Transistor Mounting:through Hole; Rds(On) Test Voltage Vgs:10V Rohs Compliant: No
Power Field-Effect Transistor, 20A I(D), 500V, 0.25ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
MOSFET, N, 500V, 20A, TO-220; Transistor Polarity: N Channel; Continuous Drain Current Id: 20A; Drain Source Voltage Vds: 500V; On Resistance Rds(on): 0.25ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 5V; Power Dissipation Pd: 280W; Transistor Case Style: TO-220AB; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: -; Current Id Max: 20A; Junction to Case Thermal Resistance A: 0.45°C/W; Operating Temperature Min: -55°C; Operating Temperature Range: -55°C to 150°C; Pulse Current Idm: 80A; Voltage Vds Typ: 500V; Voltage Vgs Max: 30V; Voltage Vgs Rds on Measurement: 10V
The three parts on the right have similar specifications to IRFB20N50KPBF.
-
ImagePart NumberManufacturerFactory Lead TimeMountMounting TypePackage / CaseNumber of PinsSupplier Device PackageWeightOperating TemperaturePackagingPublishedPart StatusMoisture Sensitivity Level (MSL)ResistanceMax Operating TemperatureMin Operating TemperatureTechnologyNumber of ElementsNumber of ChannelsPower Dissipation-MaxElement ConfigurationPower DissipationTurn On Delay TimeFET TypeRds On (Max) @ Id, VgsVgs(th) (Max) @ IdInput Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25°CGate Charge (Qg) (Max) @ VgsRise TimeDrain to Source Voltage (Vdss)Drive Voltage (Max Rds On,Min Rds On)Vgs (Max)Fall Time (Typ)Turn-Off Delay TimeContinuous Drain Current (ID)Threshold VoltageGate to Source Voltage (Vgs)Drain to Source Breakdown VoltageInput CapacitanceDrain to Source ResistanceRds On MaxHeightLengthWidthREACH SVHCRadiation HardeningRoHS StatusLead FreeSurface MountTransistor Element MaterialSeriesNumber of TerminationsECCN CodeTerminal PositionPeak Reflow Temperature (Cel)Time@Peak Reflow Temperature-Max (s)JESD-30 CodeQualification StatusConfigurationOperating ModeCase ConnectionTransistor ApplicationDrain Current-Max (Abs) (ID)Drain-source On Resistance-MaxPulsed Drain Current-Max (IDM)DS Breakdown Voltage-MinVoltage - Rated DCCurrent RatingView Compare
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IRFB20N50KPBF11 WeeksThrough HoleThrough HoleTO-220-33TO-220AB6.000006g-55°C~150°C TJTube2014Active1 (Unlimited)210mOhm150°C-55°CMOSFET (Metal Oxide)11280W TcSingle280W22 nsN-Channel250mOhm @ 12A, 10V5V @ 250μA2870pF @ 25V20A Tc110nC @ 10V74ns500V10V±30V33 ns45 ns20A5V30V500V2.87nF250mOhm250 mΩ9.01mm10.41mm4.7mmUnknownNoROHS3 CompliantLead Free---------------------
-
--Through HoleTO-273AA----40°C~175°C TJTube2010Obsolete1 (Unlimited)---MOSFET (Metal Oxide)1-300W Tc---N-Channel3.7m Ω @ 95A, 10V4V @ 250μA7360pF @ 25V206A Tc200nC @ 10V-40V10V±20V--------------Non-RoHS Compliant-NOSILICONHEXFET®3EAR99SINGLENOT SPECIFIEDNOT SPECIFIEDR-PSIP-T3Not QualifiedSINGLE WITH BUILT-IN DIODEENHANCEMENT MODEDRAINSWITCHING95A0.0037Ohm650A40V--
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-Through HoleThrough HoleTO-220-3-TO-220AB--55°C~150°C TJTube2009Obsolete1 (Unlimited)---MOSFET (Metal Oxide)--96W Tc---N-Channel450mOhm @ 5.6A, 10V4V @ 250μA920pF @ 25V9.3A Tc33nC @ 10V25ns300V10V±30V--9.3A---920pF-450 mΩ-----Non-RoHS CompliantContains Lead------------------300V9.3A
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-Through HoleThrough HoleTO-220-33TO-220AB6.000006g-55°C~150°C TJTube2004Obsolete1 (Unlimited)-150°C-55°CMOSFET (Metal Oxide)-1280W TcSingle280W20 nsN-Channel350mOhm @ 10A, 10V5V @ 250μA2210pF @ 25V17A Tc89nC @ 10V77ns500V10V±30V30 ns38 ns17A-30V500V2.21nF350mOhm350 mΩ9.01mm10.41mm4.7mm--ROHS3 CompliantLead Free------------------500V17A
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