IRFB20N50KPBF

Vishay Siliconix IRFB20N50KPBF

Part Number:
IRFB20N50KPBF
Manufacturer:
Vishay Siliconix
Ventron No:
2479027-IRFB20N50KPBF
Description:
MOSFET N-CH 500V 20A TO-220AB
ECAD Model:
Datasheet:
IRFB20N50KPBF

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Specifications
Vishay Siliconix IRFB20N50KPBF technical specifications, attributes, parameters and parts with similar specifications to Vishay Siliconix IRFB20N50KPBF.
  • Factory Lead Time
    11 Weeks
  • Mount
    Through Hole
  • Mounting Type
    Through Hole
  • Package / Case
    TO-220-3
  • Number of Pins
    3
  • Supplier Device Package
    TO-220AB
  • Weight
    6.000006g
  • Operating Temperature
    -55°C~150°C TJ
  • Packaging
    Tube
  • Published
    2014
  • Part Status
    Active
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Resistance
    210mOhm
  • Max Operating Temperature
    150°C
  • Min Operating Temperature
    -55°C
  • Technology
    MOSFET (Metal Oxide)
  • Number of Elements
    1
  • Number of Channels
    1
  • Power Dissipation-Max
    280W Tc
  • Element Configuration
    Single
  • Power Dissipation
    280W
  • Turn On Delay Time
    22 ns
  • FET Type
    N-Channel
  • Rds On (Max) @ Id, Vgs
    250mOhm @ 12A, 10V
  • Vgs(th) (Max) @ Id
    5V @ 250μA
  • Input Capacitance (Ciss) (Max) @ Vds
    2870pF @ 25V
  • Current - Continuous Drain (Id) @ 25°C
    20A Tc
  • Gate Charge (Qg) (Max) @ Vgs
    110nC @ 10V
  • Rise Time
    74ns
  • Drain to Source Voltage (Vdss)
    500V
  • Drive Voltage (Max Rds On,Min Rds On)
    10V
  • Vgs (Max)
    ±30V
  • Fall Time (Typ)
    33 ns
  • Turn-Off Delay Time
    45 ns
  • Continuous Drain Current (ID)
    20A
  • Threshold Voltage
    5V
  • Gate to Source Voltage (Vgs)
    30V
  • Drain to Source Breakdown Voltage
    500V
  • Input Capacitance
    2.87nF
  • Drain to Source Resistance
    250mOhm
  • Rds On Max
    250 mΩ
  • Height
    9.01mm
  • Length
    10.41mm
  • Width
    4.7mm
  • REACH SVHC
    Unknown
  • Radiation Hardening
    No
  • RoHS Status
    ROHS3 Compliant
  • Lead Free
    Lead Free
Description
IRFB20N50KPBF Overview
Op amps with either input grounded have a fixed input capacitance parameter, CI, and this device has a 2870pF @ 25V maximal input capacitance.Devices can conduct a maximum continuous current of 3 amps in the drain area, so the continuous drain current (ID) for this device is 20A amps.In this device, the drain-source breakdown voltage is 500V and VGS=500V, so the drain-source breakdown voltage is 500V in this case.It is [45 ns] because it takes time to charge the input capacitance of the device before drain current conduction can begin.Single MOSFETs transistor is the resistance between the drain and source of a MOSFET when the gate-to-source voltage (VGS) is applied to bias the device to the on state, and Single MOSFETs transistor is 250mOhm.A turn-on delay time of 22 ns indicates the time it takes for the input capacitance of the device to charge before drain current conduction starts.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 30V.Normally, electrical devices are set to activate all of their operations at threshold voltages, and this transistor's threshold voltage is 5V.To operate this transistor, you will need a 500V drain to source voltage (Vdss).A device like this reduces its overall power consumption when it uses drive voltage (10V).

IRFB20N50KPBF Features
a continuous drain current (ID) of 20A
a drain-to-source breakdown voltage of 500V voltage
the turn-off delay time is 45 ns
single MOSFETs transistor is 250mOhm
a threshold voltage of 5V
a 500V drain to source voltage (Vdss)


IRFB20N50KPBF Applications
There are a lot of Vishay Siliconix
IRFB20N50KPBF applications of single MOSFETs transistors.


Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
IRFB20N50KPBF More Descriptions
Single N-Channel 500 V 0.29 Ohms Flange Mount Power Mosfet - TO-220AB
MOSFET N-CH 500V 20A TO-220AB | Siliconix / Vishay IRFB20N50KPBF
Trans MOSFET N-CH 500V 20A 3-Pin(3 Tab) TO-220AB
500V 20A 280W 250m´Î@10V12A 5V@250Ã×A N Channel TO-220(TO-220-3) MOSFETs ROHS
N Channel Mosfet, 500V, 20A, To-220Ab; Transistor Polarity:n Channel; Drain Source Voltage Vds:500V; Continuous Drain Current Id:20A; On Resistance Rds(On):0.21Ohm; Transistor Mounting:through Hole; Rds(On) Test Voltage Vgs:10V Rohs Compliant: No
Power Field-Effect Transistor, 20A I(D), 500V, 0.25ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
MOSFET, N, 500V, 20A, TO-220; Transistor Polarity: N Channel; Continuous Drain Current Id: 20A; Drain Source Voltage Vds: 500V; On Resistance Rds(on): 0.25ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 5V; Power Dissipation Pd: 280W; Transistor Case Style: TO-220AB; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: -; Current Id Max: 20A; Junction to Case Thermal Resistance A: 0.45°C/W; Operating Temperature Min: -55°C; Operating Temperature Range: -55°C to 150°C; Pulse Current Idm: 80A; Voltage Vds Typ: 500V; Voltage Vgs Max: 30V; Voltage Vgs Rds on Measurement: 10V
Product Comparison
The three parts on the right have similar specifications to IRFB20N50KPBF.
  • Image
    Part Number
    Manufacturer
    Factory Lead Time
    Mount
    Mounting Type
    Package / Case
    Number of Pins
    Supplier Device Package
    Weight
    Operating Temperature
    Packaging
    Published
    Part Status
    Moisture Sensitivity Level (MSL)
    Resistance
    Max Operating Temperature
    Min Operating Temperature
    Technology
    Number of Elements
    Number of Channels
    Power Dissipation-Max
    Element Configuration
    Power Dissipation
    Turn On Delay Time
    FET Type
    Rds On (Max) @ Id, Vgs
    Vgs(th) (Max) @ Id
    Input Capacitance (Ciss) (Max) @ Vds
    Current - Continuous Drain (Id) @ 25°C
    Gate Charge (Qg) (Max) @ Vgs
    Rise Time
    Drain to Source Voltage (Vdss)
    Drive Voltage (Max Rds On,Min Rds On)
    Vgs (Max)
    Fall Time (Typ)
    Turn-Off Delay Time
    Continuous Drain Current (ID)
    Threshold Voltage
    Gate to Source Voltage (Vgs)
    Drain to Source Breakdown Voltage
    Input Capacitance
    Drain to Source Resistance
    Rds On Max
    Height
    Length
    Width
    REACH SVHC
    Radiation Hardening
    RoHS Status
    Lead Free
    Surface Mount
    Transistor Element Material
    Series
    Number of Terminations
    ECCN Code
    Terminal Position
    Peak Reflow Temperature (Cel)
    Time@Peak Reflow Temperature-Max (s)
    JESD-30 Code
    Qualification Status
    Configuration
    Operating Mode
    Case Connection
    Transistor Application
    Drain Current-Max (Abs) (ID)
    Drain-source On Resistance-Max
    Pulsed Drain Current-Max (IDM)
    DS Breakdown Voltage-Min
    Voltage - Rated DC
    Current Rating
    View Compare
  • IRFB20N50KPBF
    IRFB20N50KPBF
    11 Weeks
    Through Hole
    Through Hole
    TO-220-3
    3
    TO-220AB
    6.000006g
    -55°C~150°C TJ
    Tube
    2014
    Active
    1 (Unlimited)
    210mOhm
    150°C
    -55°C
    MOSFET (Metal Oxide)
    1
    1
    280W Tc
    Single
    280W
    22 ns
    N-Channel
    250mOhm @ 12A, 10V
    5V @ 250μA
    2870pF @ 25V
    20A Tc
    110nC @ 10V
    74ns
    500V
    10V
    ±30V
    33 ns
    45 ns
    20A
    5V
    30V
    500V
    2.87nF
    250mOhm
    250 mΩ
    9.01mm
    10.41mm
    4.7mm
    Unknown
    No
    ROHS3 Compliant
    Lead Free
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • IRFBA1404P
    -
    -
    Through Hole
    TO-273AA
    -
    -
    -
    -40°C~175°C TJ
    Tube
    2010
    Obsolete
    1 (Unlimited)
    -
    -
    -
    MOSFET (Metal Oxide)
    1
    -
    300W Tc
    -
    -
    -
    N-Channel
    3.7m Ω @ 95A, 10V
    4V @ 250μA
    7360pF @ 25V
    206A Tc
    200nC @ 10V
    -
    40V
    10V
    ±20V
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    Non-RoHS Compliant
    -
    NO
    SILICON
    HEXFET®
    3
    EAR99
    SINGLE
    NOT SPECIFIED
    NOT SPECIFIED
    R-PSIP-T3
    Not Qualified
    SINGLE WITH BUILT-IN DIODE
    ENHANCEMENT MODE
    DRAIN
    SWITCHING
    95A
    0.0037Ohm
    650A
    40V
    -
    -
  • IRFB9N30A
    -
    Through Hole
    Through Hole
    TO-220-3
    -
    TO-220AB
    -
    -55°C~150°C TJ
    Tube
    2009
    Obsolete
    1 (Unlimited)
    -
    -
    -
    MOSFET (Metal Oxide)
    -
    -
    96W Tc
    -
    -
    -
    N-Channel
    450mOhm @ 5.6A, 10V
    4V @ 250μA
    920pF @ 25V
    9.3A Tc
    33nC @ 10V
    25ns
    300V
    10V
    ±30V
    -
    -
    9.3A
    -
    -
    -
    920pF
    -
    450 mΩ
    -
    -
    -
    -
    -
    Non-RoHS Compliant
    Contains Lead
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    300V
    9.3A
  • IRFB16N50KPBF
    -
    Through Hole
    Through Hole
    TO-220-3
    3
    TO-220AB
    6.000006g
    -55°C~150°C TJ
    Tube
    2004
    Obsolete
    1 (Unlimited)
    -
    150°C
    -55°C
    MOSFET (Metal Oxide)
    -
    1
    280W Tc
    Single
    280W
    20 ns
    N-Channel
    350mOhm @ 10A, 10V
    5V @ 250μA
    2210pF @ 25V
    17A Tc
    89nC @ 10V
    77ns
    500V
    10V
    ±30V
    30 ns
    38 ns
    17A
    -
    30V
    500V
    2.21nF
    350mOhm
    350 mΩ
    9.01mm
    10.41mm
    4.7mm
    -
    -
    ROHS3 Compliant
    Lead Free
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    500V
    17A
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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