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IRF9Z34NSTRLPBF

Infineon Technologies IRF9Z34NSTRLPBF

Part Number:
IRF9Z34NSTRLPBF
Manufacturer:
Infineon Technologies
Ventron No:
2478689-IRF9Z34NSTRLPBF
Description:
MOSFET P-CH 55V 19A D2PAK
ECAD Model:
Datasheet:
IRF9Z34NSTRLPBF

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Specifications
Infineon Technologies IRF9Z34NSTRLPBF technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies IRF9Z34NSTRLPBF.
  • Factory Lead Time
    12 Weeks
  • Mount
    Surface Mount
  • Mounting Type
    Surface Mount
  • Package / Case
    TO-263-3, D2Pak (2 Leads Tab), TO-263AB
  • Number of Pins
    3
  • Transistor Element Material
    SILICON
  • Operating Temperature
    -55°C~175°C TJ
  • Packaging
    Tape & Reel (TR)
  • Series
    HEXFET®
  • Published
    1997
  • JESD-609 Code
    e3
  • Part Status
    Active
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    2
  • ECCN Code
    EAR99
  • Resistance
    100mOhm
  • Terminal Finish
    Matte Tin (Sn) - with Nickel (Ni) barrier
  • Additional Feature
    AVALANCHE RATED, HIGH RELIABILITY
  • Voltage - Rated DC
    -55V
  • Technology
    MOSFET (Metal Oxide)
  • Terminal Form
    GULL WING
  • Peak Reflow Temperature (Cel)
    260
  • Current Rating
    -19A
  • Time@Peak Reflow Temperature-Max (s)
    30
  • JESD-30 Code
    R-PSSO-G2
  • Number of Elements
    1
  • Number of Channels
    1
  • Power Dissipation-Max
    3.8W Ta 68W Tc
  • Element Configuration
    Single
  • Operating Mode
    ENHANCEMENT MODE
  • Power Dissipation
    68W
  • Case Connection
    DRAIN
  • Turn On Delay Time
    13 ns
  • FET Type
    P-Channel
  • Transistor Application
    SWITCHING
  • Rds On (Max) @ Id, Vgs
    100m Ω @ 10A, 10V
  • Vgs(th) (Max) @ Id
    4V @ 250μA
  • Input Capacitance (Ciss) (Max) @ Vds
    620pF @ 25V
  • Current - Continuous Drain (Id) @ 25°C
    19A Tc
  • Gate Charge (Qg) (Max) @ Vgs
    35nC @ 10V
  • Rise Time
    55ns
  • Drive Voltage (Max Rds On,Min Rds On)
    10V
  • Vgs (Max)
    ±20V
  • Fall Time (Typ)
    41 ns
  • Turn-Off Delay Time
    30 ns
  • Continuous Drain Current (ID)
    -19A
  • Threshold Voltage
    -2V
  • Gate to Source Voltage (Vgs)
    20V
  • Drain to Source Breakdown Voltage
    -55V
  • Pulsed Drain Current-Max (IDM)
    68A
  • Dual Supply Voltage
    55V
  • Recovery Time
    82 ns
  • Max Junction Temperature (Tj)
    175°C
  • Nominal Vgs
    -4 V
  • Height
    4.83mm
  • Length
    10.668mm
  • Width
    9.65mm
  • REACH SVHC
    No SVHC
  • Radiation Hardening
    No
  • RoHS Status
    ROHS3 Compliant
  • Lead Free
    Contains Lead, Lead Free
Description
IRF9Z34NSTRLPBF Description
IRF9Z34NSTRLPBF is a P-channel Power MOSFET transistor from the manufacturer Infineon Technologies with a drain to source voltage of 55V. The operating temperature of the IRF9Z34NSTRLPBF is -55°C~175°C TJ and its maximum power dissipation is 68W Tc. IRF9Z34NSTRLPBF has 3 pins and it is available in Tape & Reel (TR) packaging way.

IRF9Z34NSTRLPBF Features
Input Capacitance (Ciss) (Max) @ Vds: 620pF @ 25V
Gate Charge (Qg) (Max) @ Vgs: 35nC @ 10V
Drive Voltage (Max Rds On,Min Rds On): 10V
Vgs(th) (Max) @ Id: 4V @ 250μA

IRF9Z34NSTRLPBF Applications
Power Management
Consumer Electronics
Portable Devices
Industrial
IRF9Z34NSTRLPBF More Descriptions
MOSFET P-CH 55V 19A D2PAK / Trans MOSFET P-CH Si 55V 19A 3-Pin(2 Tab) D2PAK T/R
-55V Single P-Channel HEXFET Power MOSFET in a D2-Pak package, D2PAK-3, RoHSInfineon SCT
Single P-Channel 55V 0.1 Ohm 35 nC HEXFET® Power Mosfet - D2PAK
INTERNATIONAL RECTIFIER IRF9Z34NSTRLPBF / MOSFET P-CH 55V 19A D2PAK
Benefits: RoHS Compliant; Low RDS(on); Industry-leading quality; Dynamic dv/dt Rating; Fast Switching; Fully Avalanche Rated; 175C Operating Temperature; P-Channel MOSFET
MOSFET; Transistor Type:MOSFET; Transistor Polarity:P Channel; Continuous Drain Current, Id:19A; On Resistance, Rds(on):100mohm; Rds(on) Test Voltage, Vgs:20V; Package/Case:D2-Pak; Power Dissipation, Pd:68W ;RoHS Compliant: Yes
Transistor Polarity = P-Channel / Configuration = Single / Continuous Drain Current (Id) A = -19 / Drain-Source Voltage (Vds) V = -55 / ON Resistance (Rds(on)) mOhm = 100 / Gate-Source Voltage V = 20 / Fall Time ns = 41 / Rise Time ns = 55 / Turn-OFF Delay Time ns = 30 / Turn-ON Delay Time ns = 13 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 175 / Package Type = D2PAK / Pins = 3 / Mounting Type = SMD / MSL = Level-1 / Packaging = Tape & Reel / Reflow Temperature Max. °C = 300 / Power Dissipation (Pd) W = 68
Product Comparison
The three parts on the right have similar specifications to IRF9Z34NSTRLPBF.
  • Image
    Part Number
    Manufacturer
    Factory Lead Time
    Mount
    Mounting Type
    Package / Case
    Number of Pins
    Transistor Element Material
    Operating Temperature
    Packaging
    Series
    Published
    JESD-609 Code
    Part Status
    Moisture Sensitivity Level (MSL)
    Number of Terminations
    ECCN Code
    Resistance
    Terminal Finish
    Additional Feature
    Voltage - Rated DC
    Technology
    Terminal Form
    Peak Reflow Temperature (Cel)
    Current Rating
    Time@Peak Reflow Temperature-Max (s)
    JESD-30 Code
    Number of Elements
    Number of Channels
    Power Dissipation-Max
    Element Configuration
    Operating Mode
    Power Dissipation
    Case Connection
    Turn On Delay Time
    FET Type
    Transistor Application
    Rds On (Max) @ Id, Vgs
    Vgs(th) (Max) @ Id
    Input Capacitance (Ciss) (Max) @ Vds
    Current - Continuous Drain (Id) @ 25°C
    Gate Charge (Qg) (Max) @ Vgs
    Rise Time
    Drive Voltage (Max Rds On,Min Rds On)
    Vgs (Max)
    Fall Time (Typ)
    Turn-Off Delay Time
    Continuous Drain Current (ID)
    Threshold Voltage
    Gate to Source Voltage (Vgs)
    Drain to Source Breakdown Voltage
    Pulsed Drain Current-Max (IDM)
    Dual Supply Voltage
    Recovery Time
    Max Junction Temperature (Tj)
    Nominal Vgs
    Height
    Length
    Width
    REACH SVHC
    Radiation Hardening
    RoHS Status
    Lead Free
    Pbfree Code
    Subcategory
    Terminal Position
    Reach Compliance Code
    Pin Count
    Qualification Status
    Configuration
    Drain to Source Voltage (Vdss)
    Drain-source On Resistance-Max
    DS Breakdown Voltage-Min
    Avalanche Energy Rating (Eas)
    Supplier Device Package
    Max Power Dissipation
    Input Capacitance
    Rds On Max
    View Compare
  • IRF9Z34NSTRLPBF
    IRF9Z34NSTRLPBF
    Infineon Technologies
    12 Weeks
    Surface Mount
    Surface Mount
    TO-263-3, D2Pak (2 Leads Tab), TO-263AB
    3
    SILICON
    -55°C~175°C TJ
    Tape & Reel (TR)
    HEXFET®
    1997
    e3
    Active
    1 (Unlimited)
    2
    EAR99
    100mOhm
    Matte Tin (Sn) - with Nickel (Ni) barrier
    AVALANCHE RATED, HIGH RELIABILITY
    -55V
    MOSFET (Metal Oxide)
    GULL WING
    260
    -19A
    30
    R-PSSO-G2
    1
    1
    3.8W Ta 68W Tc
    Single
    ENHANCEMENT MODE
    68W
    DRAIN
    13 ns
    P-Channel
    SWITCHING
    100m Ω @ 10A, 10V
    4V @ 250μA
    620pF @ 25V
    19A Tc
    35nC @ 10V
    55ns
    10V
    ±20V
    41 ns
    30 ns
    -19A
    -2V
    20V
    -55V
    68A
    55V
    82 ns
    175°C
    -4 V
    4.83mm
    10.668mm
    9.65mm
    No SVHC
    No
    ROHS3 Compliant
    Contains Lead, Lead Free
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • IRF9540STRR
    IRF9540STRR
    Vishay Siliconix
    -
    Surface Mount
    Surface Mount
    TO-263-3, D2Pak (2 Leads Tab), TO-263AB
    -
    SILICON
    -55°C~175°C TJ
    Tape & Reel (TR)
    -
    2016
    -
    Active
    1 (Unlimited)
    2
    EAR99
    -
    -
    AVALANCHE RATED
    -
    MOSFET (Metal Oxide)
    GULL WING
    225
    -
    NOT SPECIFIED
    R-PSSO-G2
    1
    -
    3.7W Ta 150W Tc
    -
    ENHANCEMENT MODE
    -
    DRAIN
    -
    P-Channel
    SWITCHING
    200m Ω @ 11A, 10V
    4V @ 250μA
    1400pF @ 25V
    19A Tc
    61nC @ 10V
    -
    10V
    ±20V
    -
    -
    19A
    -
    -
    -
    72A
    -
    -
    -
    -
    -
    -
    -
    -
    -
    Non-RoHS Compliant
    -
    no
    Other Transistors
    SINGLE
    unknown
    3
    Not Qualified
    SINGLE WITH BUILT-IN DIODE
    100V
    0.2Ohm
    100V
    640 mJ
    -
    -
    -
    -
    IRF9Z34NSTRLPBF vs IRF9540STRR
  • IRF9540L
    IRF9540L
    Vishay Siliconix
    -
    Through Hole
    Through Hole
    TO-262-3 Long Leads, I2Pak, TO-262AA
    -
    -
    -55°C~175°C TJ
    Tube
    -
    2016
    -
    Active
    1 (Unlimited)
    -
    -
    -
    -
    -
    -
    MOSFET (Metal Oxide)
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    P-Channel
    -
    200mOhm @ 11A, 10V
    4V @ 250μA
    1400pF @ 25V
    19A Tc
    61nC @ 10V
    -
    10V
    ±20V
    -
    -
    19A
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    Non-RoHS Compliant
    -
    -
    -
    -
    -
    -
    -
    -
    100V
    -
    -
    -
    I2PAK
    3.7W
    1.4nF
    200 mΩ
    IRF9Z34NSTRLPBF vs IRF9540L
  • IRF9383MTRPBF
    IRF9383MTRPBF
    Infineon Technologies
    12 Weeks
    Surface Mount
    Surface Mount
    DirectFET™ Isometric MX
    7
    SILICON
    -40°C~150°C TJ
    Tape & Reel (TR)
    HEXFET®
    2011
    e3
    Active
    1 (Unlimited)
    3
    EAR99
    -
    Matte Tin (Sn)
    -
    -
    MOSFET (Metal Oxide)
    -
    -
    -
    -
    R-XBCC-N3
    1
    -
    2.1W Ta 113W Tc
    -
    ENHANCEMENT MODE
    2.1W
    DRAIN
    29 ns
    P-Channel
    SWITCHING
    2.9m Ω @ 22A, 10V
    2.4V @ 150μA
    7305pF @ 15V
    22A Ta 160A Tc
    130nC @ 10V
    160ns
    4.5V 10V
    ±20V
    110 ns
    115 ns
    22A
    -
    20V
    -30V
    -
    -
    -
    -
    -
    -
    -
    -
    -
    No
    ROHS3 Compliant
    Lead Free
    -
    Other Transistors
    BOTTOM
    -
    -
    -
    SINGLE WITH BUILT-IN DIODE
    30V
    0.0029Ohm
    -
    -
    -
    -
    -
    -
    IRF9Z34NSTRLPBF vs IRF9383MTRPBF
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS
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