Vishay Siliconix IRF9Z24PBF

Name: IRF9Z24PBF
Brand: Vishay Siliconix
SKU: 2482938-IRF9Z24PBF
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: IRF9Z24PBF

Manufacturer:: Vishay Siliconix

Ventron No:: 2482938-IRF9Z24PBF

Description:: MOSFET P-CH 60V 11A TO-220AB

ECAD Model:

Datasheet:: IRF9Z24PBF

Specifications

Vishay Siliconix IRF9Z24PBF technical specifications, attributes, parameters and parts with similar specifications to Vishay Siliconix IRF9Z24PBF.

Factory Lead Time
8 Weeks
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-220-3
Number of Pins
3
Supplier Device Package
TO-220AB
Weight
6.000006g
Operating Temperature
-55°C~175°C TJ
Packaging
Tube
Published
2014
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Resistance
280mOhm
Max Operating Temperature
175°C
Min Operating Temperature
-55°C
Technology
MOSFET (Metal Oxide)
Number of Elements
1
Number of Channels
1
Power Dissipation-Max
60W Tc
Element Configuration
Single
Power Dissipation
60W
Turn On Delay Time
13 ns
FET Type
P-Channel
Rds On (Max) @ Id, Vgs
280mOhm @ 6.6A, 10V
Vgs(th) (Max) @ Id
4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds
570pF @ 25V
Current - Continuous Drain (Id) @ 25°C
11A Tc
Gate Charge (Qg) (Max) @ Vgs
19nC @ 10V
Rise Time
68ns
Drain to Source Voltage (Vdss)
60V
Drive Voltage (Max Rds On,Min Rds On)
10V
Vgs (Max)
±20V
Fall Time (Typ)
29 ns
Turn-Off Delay Time
15 ns
Continuous Drain Current (ID)
11A
Threshold Voltage
-4V
Gate to Source Voltage (Vgs)
20V
Drain to Source Breakdown Voltage
-60V
Input Capacitance
570pF
Max Junction Temperature (Tj)
175°C
Drain to Source Resistance
280mOhm
Rds On Max
280 mΩ
Nominal Vgs
-4 V
Height
19.89mm
Length
10.41mm
Width
4.7mm
REACH SVHC
Unknown
Radiation Hardening
No
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free

Description

IRF9Z24PBF Overview
A device's maximal input capacitance is 570pF @ 25V, which is defined as the capacitance between its input terminals with either input grounded.This device's continuous drain current (ID) is 11A, which represents the maximum continuous current it can conduct.In this device, the drain-source breakdown voltage is -60V and the drain-source breakdown voltage is the VDS at which a specified value of ID flows.Its turn-off delay time is 15 ns, which is the time to charge the device's input capacitance before drain current conduction begins.When a gate-to-source voltage (VGS) is applied to bias a MOSFET to the on state, the resistance between the drain and the source of the device is 280mOhm.Input capacitance charging takes time before drain current conduction begins, so the turn-on delay time is 13 ns.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 20V volts.An electrical device's threshold voltage is the point at which any of its operations will become active, and this transistor has a -4V threshold voltage.This transistor requires a 60V drain to source voltage (Vdss).This device reduces its overall power consumption by using drive voltage (10V).

IRF9Z24PBF Features
a continuous drain current (ID) of 11A
a drain-to-source breakdown voltage of -60V voltage
the turn-off delay time is 15 ns
single MOSFETs transistor is 280mOhm
a threshold voltage of -4V
a 60V drain to source voltage (Vdss)

IRF9Z24PBF Applications
There are a lot of Vishay Siliconix
IRF9Z24PBF applications of single MOSFETs transistors.

Consumer Appliances
Lighting
Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples

IRF9Z24PBF More Descriptions

Single P-Channel 60 V 0.28 Ohms Flange Mount Power Mosfet - TO-220AB
Transistor: P-MOSFET; unipolar; -60V; -7.7A; 60W; TO220AB
Trans MOSFET P-CH 60V 11A 3-Pin(3 Tab) TO-220AB
P CHANNEL MOSFET, -60V, 11A, TO-220; Transistor Polarity: P Channel; Continuous Drain Current Id: -11A; Drain Source Voltage Vds: -60V; On Resistance Rds(on): 0.28ohm; Rds(on) Test Voltage Vgs: -10V; Threshold Voltage Vgs: -4V; MSL: -

Product Comparison

The three parts on the right have similar specifications to IRF9Z24PBF.

Image

Part Number

Manufacturer

Factory Lead Time

Mount

Mounting Type

Package / Case

Number of Pins

Supplier Device Package

Weight

Operating Temperature

Packaging

Published

Part Status

Moisture Sensitivity Level (MSL)

Resistance

Max Operating Temperature

Min Operating Temperature

Technology

Number of Elements

Number of Channels

Power Dissipation-Max

Element Configuration

Power Dissipation

Turn On Delay Time

FET Type

Rds On (Max) @ Id, Vgs

Vgs(th) (Max) @ Id

Input Capacitance (Ciss) (Max) @ Vds

Current - Continuous Drain (Id) @ 25°C

Gate Charge (Qg) (Max) @ Vgs

Rise Time

Drain to Source Voltage (Vdss)

Drive Voltage (Max Rds On,Min Rds On)

Vgs (Max)

Fall Time (Typ)

Turn-Off Delay Time

Continuous Drain Current (ID)

Threshold Voltage

Gate to Source Voltage (Vgs)

Drain to Source Breakdown Voltage

Input Capacitance

Max Junction Temperature (Tj)

Drain to Source Resistance

Rds On Max

Nominal Vgs

Height

Length

Width

REACH SVHC

Radiation Hardening

RoHS Status

Lead Free

Surface Mount

Transistor Element Material

Series

Number of Terminations

ECCN Code

Terminal Finish

Additional Feature

Terminal Position

Terminal Form

Peak Reflow Temperature (Cel)

Time@Peak Reflow Temperature-Max (s)

JESD-30 Code

Qualification Status

Configuration

Operating Mode

Transistor Application

JEDEC-95 Code

Drain Current-Max (Abs) (ID)

Drain-source On Resistance-Max

Pulsed Drain Current-Max (IDM)

DS Breakdown Voltage-Min

Avalanche Energy Rating (Eas)

Pbfree Code

Subcategory

Reach Compliance Code

Pin Count

Case Connection

Max Power Dissipation

View Compare
IRF9Z24PBF

Vishay Siliconix

8 Weeks

Through Hole

Through Hole

TO-220-3

3

TO-220AB

6.000006g

-55°C~175°C TJ

Tube

2014

Active

1 (Unlimited)

280mOhm

175°C

-55°C

MOSFET (Metal Oxide)

1

1

60W Tc

Single

60W

13 ns

P-Channel

280mOhm @ 6.6A, 10V

4V @ 250μA

570pF @ 25V

11A Tc

19nC @ 10V

68ns

60V

10V

±20V

29 ns

15 ns

11A

-4V

20V

-60V

570pF

175°C

280mOhm

280 mΩ

-4 V

19.89mm

10.41mm

4.7mm

Unknown

No

ROHS3 Compliant

Lead Free

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-
IRF9410

Infineon Technologies

-

-

Surface Mount

8-SOIC (0.154, 3.90mm Width)

-

-

-

-55°C~150°C TJ

Tube

1997

Obsolete

1 (Unlimited)

-

-

-

MOSFET (Metal Oxide)

1

-

2.5W Ta

-

-

-

N-Channel

30m Ω @ 7A, 10V

1V @ 250μA

550pF @ 25V

7A Ta

27nC @ 10V

-

30V

4.5V 10V

±20V

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

Non-RoHS Compliant

-

YES

SILICON

HEXFET®

8

EAR99

NOT SPECIFIED

HIGH RELIABILITY

DUAL

GULL WING

NOT SPECIFIED

NOT SPECIFIED

R-PDSO-G8

Not Qualified

SINGLE WITH BUILT-IN DIODE

ENHANCEMENT MODE

SWITCHING

MS-012AA

7A

0.03Ohm

37A

30V

70 mJ

-

-

-

-

-

-

IRF9Z24PBF vs IRF9410
IRF9540STRR

Vishay Siliconix

-

Surface Mount

Surface Mount

TO-263-3, D2Pak (2 Leads Tab), TO-263AB

-

-

-

-55°C~175°C TJ

Tape & Reel (TR)

2016

Active

1 (Unlimited)

-

-

-

MOSFET (Metal Oxide)

1

-

3.7W Ta 150W Tc

-

-

-

P-Channel

200m Ω @ 11A, 10V

4V @ 250μA

1400pF @ 25V

19A Tc

61nC @ 10V

-

100V

10V

±20V

-

-

19A

-

-

-

-

-

-

-

-

-

-

-

-

-

Non-RoHS Compliant

-

-

SILICON

-

2

EAR99

-

AVALANCHE RATED

SINGLE

GULL WING

225

NOT SPECIFIED

R-PSSO-G2

Not Qualified

SINGLE WITH BUILT-IN DIODE

ENHANCEMENT MODE

SWITCHING

-

-

0.2Ohm

72A

100V

640 mJ

no

Other Transistors

unknown

3

DRAIN

-

IRF9Z24PBF vs IRF9540STRR
IRF9540L

Vishay Siliconix

-

Through Hole

Through Hole

TO-262-3 Long Leads, I2Pak, TO-262AA

-

I2PAK

-

-55°C~175°C TJ

Tube

2016

Active

1 (Unlimited)

-

-

-

MOSFET (Metal Oxide)

-

-

-

-

-

-

P-Channel

200mOhm @ 11A, 10V

4V @ 250μA

1400pF @ 25V

19A Tc

61nC @ 10V

-

100V

10V

±20V

-

-

19A

-

-

-

1.4nF

-

-

200 mΩ

-

-

-

-

-

-

Non-RoHS Compliant

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

3.7W

IRF9Z24PBF vs IRF9540L