Infineon Technologies IRF9Z24NSTRL

Name: IRF9Z24NSTRL
Brand: Infineon Technologies
SKU: 2491847-IRF9Z24NSTRL
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: IRF9Z24NSTRL

Manufacturer:: Infineon Technologies

Ventron No:: 2491847-IRF9Z24NSTRL

Description:: MOSFET P-CH 55V 12A D2PAK

ECAD Model:

Datasheet:: IRF9Z24NSTRL

Specifications

Infineon Technologies IRF9Z24NSTRL technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies IRF9Z24NSTRL.

Mounting Type
Surface Mount
Package / Case
TO-263-3, D2Pak (2 Leads Tab), TO-263AB
Surface Mount
YES
Transistor Element Material
SILICON
Operating Temperature
-55°C~175°C TJ
Packaging
Tape & Reel (TR)
Series
HEXFET®
Published
1999
JESD-609 Code
e3
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
2
ECCN Code
EAR99
Terminal Finish
Matte Tin (Sn) - with Nickel (Ni) barrier
Additional Feature
AVALANCHE RATED, HIGH RELIABILITY
Subcategory
Other Transistors
Technology
MOSFET (Metal Oxide)
Terminal Position
SINGLE
Terminal Form
GULL WING
Peak Reflow Temperature (Cel)
260
Time@Peak Reflow Temperature-Max (s)
30
JESD-30 Code
R-PSSO-G2
Qualification Status
Not Qualified
Number of Elements
1
Configuration
SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max
3.8W Ta 45W Tc
Operating Mode
ENHANCEMENT MODE
Case Connection
DRAIN
FET Type
P-Channel
Transistor Application
SWITCHING
Rds On (Max) @ Id, Vgs
175m Ω @ 7.2A, 10V
Vgs(th) (Max) @ Id
4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds
350pF @ 25V
Current - Continuous Drain (Id) @ 25°C
12A Tc
Gate Charge (Qg) (Max) @ Vgs
19nC @ 10V
Drain to Source Voltage (Vdss)
55V
Drive Voltage (Max Rds On,Min Rds On)
10V
Vgs (Max)
±20V
Drain Current-Max (Abs) (ID)
12A
Drain-source On Resistance-Max
0.175Ohm
Pulsed Drain Current-Max (IDM)
48A
DS Breakdown Voltage-Min
55V
Avalanche Energy Rating (Eas)
96 mJ
RoHS Status
Non-RoHS Compliant

Description

IRF9Z24NSTRL Overview
There is a phenomenon known as "avalanche break down", where avalanche energy is applied to the MOSFET and avalanche energy rating (Eas) is 96 mJ.Input capacitance, CI, is defined as the capacitance between two input terminals of an op amp with one input grounded, and the input capacitance of this device is 350pF @ 25V.A device's drain current is its maximum continuous current, and this device's drain current is 12A.A maximum pulsed drain current of 48A is the maximum peak drain current rated for this device.In order to maintain normal operation, it is recommended to keep the DS breakdown voltage above 55V.In order to operate this transistor, a voltage of 55V is needed from the drain to the source (Vdss).Its overall power consumption can be reduced by using drive voltage (10V).

IRF9Z24NSTRL Features
the avalanche energy rating (Eas) is 96 mJ
based on its rated peak drain current 48A.
a 55V drain to source voltage (Vdss)

IRF9Z24NSTRL Applications
There are a lot of Infineon Technologies
IRF9Z24NSTRL applications of single MOSFETs transistors.

Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit

IRF9Z24NSTRL More Descriptions

-55V Single P-Channel HEXFET Power MOSFET in a D2-Pak package
MOSFET P-CH 55V 12A D2PAK

Product Comparison

The three parts on the right have similar specifications to IRF9Z24NSTRL.

Image

Part Number

Manufacturer

Mounting Type

Package / Case

Surface Mount

Transistor Element Material

Operating Temperature

Packaging

Series

Published

JESD-609 Code

Part Status

Moisture Sensitivity Level (MSL)

Number of Terminations

ECCN Code

Terminal Finish

Additional Feature

Subcategory

Technology

Terminal Position

Terminal Form

Peak Reflow Temperature (Cel)

Time@Peak Reflow Temperature-Max (s)

JESD-30 Code

Qualification Status

Number of Elements

Configuration

Power Dissipation-Max

Operating Mode

Case Connection

FET Type

Transistor Application

Rds On (Max) @ Id, Vgs

Vgs(th) (Max) @ Id

Input Capacitance (Ciss) (Max) @ Vds

Current - Continuous Drain (Id) @ 25°C

Gate Charge (Qg) (Max) @ Vgs

Drain to Source Voltage (Vdss)

Drive Voltage (Max Rds On,Min Rds On)

Vgs (Max)

Drain Current-Max (Abs) (ID)

Drain-source On Resistance-Max

Pulsed Drain Current-Max (IDM)

DS Breakdown Voltage-Min

Avalanche Energy Rating (Eas)

RoHS Status

JEDEC-95 Code

Mount

Max Power Dissipation

Continuous Drain Current (ID)

Supplier Device Package

Weight

Max Operating Temperature

Min Operating Temperature

Voltage - Rated DC

Current Rating

Number of Channels

Element Configuration

Power Dissipation

Turn On Delay Time

Rise Time

Fall Time (Typ)

Turn-Off Delay Time

Gate to Source Voltage (Vgs)

Drain to Source Breakdown Voltage

Input Capacitance

Drain to Source Resistance

Rds On Max

Height

Length

Width

Lead Free

View Compare
IRF9Z24NSTRL

Infineon Technologies

Surface Mount

TO-263-3, D2Pak (2 Leads Tab), TO-263AB

YES

SILICON

-55°C~175°C TJ

Tape & Reel (TR)

HEXFET®

1999

e3

Obsolete

1 (Unlimited)

2

EAR99

Matte Tin (Sn) - with Nickel (Ni) barrier

AVALANCHE RATED, HIGH RELIABILITY

Other Transistors

MOSFET (Metal Oxide)

SINGLE

GULL WING

260

30

R-PSSO-G2

Not Qualified

1

SINGLE WITH BUILT-IN DIODE

3.8W Ta 45W Tc

ENHANCEMENT MODE

DRAIN

P-Channel

SWITCHING

175m Ω @ 7.2A, 10V

4V @ 250μA

350pF @ 25V

12A Tc

19nC @ 10V

55V

10V

±20V

12A

0.175Ohm

48A

55V

96 mJ

Non-RoHS Compliant

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-
IRF9410

Infineon Technologies

Surface Mount

8-SOIC (0.154, 3.90mm Width)

YES

SILICON

-55°C~150°C TJ

Tube

HEXFET®

1997

-

Obsolete

1 (Unlimited)

8

EAR99

NOT SPECIFIED

HIGH RELIABILITY

-

MOSFET (Metal Oxide)

DUAL

GULL WING

NOT SPECIFIED

NOT SPECIFIED

R-PDSO-G8

Not Qualified

1

SINGLE WITH BUILT-IN DIODE

2.5W Ta

ENHANCEMENT MODE

-

N-Channel

SWITCHING

30m Ω @ 7A, 10V

1V @ 250μA

550pF @ 25V

7A Ta

27nC @ 10V

30V

4.5V 10V

±20V

7A

0.03Ohm

37A

30V

70 mJ

Non-RoHS Compliant

MS-012AA

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

IRF9Z24NSTRL vs IRF9410
IRF9530L

Vishay Siliconix

Through Hole

TO-262-3 Long Leads, I2Pak, TO-262AA

-

-

-55°C~175°C TJ

Tube

-

2016

-

Active

1 (Unlimited)

-

-

-

-

-

MOSFET (Metal Oxide)

-

-

-

-

-

-

-

-

-

-

-

P-Channel

-

300m Ω @ 7.2A, 10V

4V @ 250μA

860pF @ 25V

12A Tc

38nC @ 10V

100V

10V

±20V

-

-

-

-

-

Non-RoHS Compliant

-

Through Hole

3.7W

12A

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

IRF9Z24NSTRL vs IRF9530L
IRF9510S

Vishay Siliconix

Surface Mount

TO-263-3, D2Pak (2 Leads Tab), TO-263AB

-

-

-55°C~175°C TJ

Tube

-

2016

-

Obsolete

1 (Unlimited)

-

-

-

-

-

MOSFET (Metal Oxide)

-

-

-

-

-

-

-

-

3.7W Ta 43W Tc

-

-

P-Channel

-

1.2Ohm @ 2.4A, 10V

4V @ 250μA

200pF @ 25V

4A Tc

8.7nC @ 10V

100V

10V

±20V

-

-

-

-

-

Non-RoHS Compliant

-

Surface Mount

-

4A

D2PAK

1.437803g

175°C

-55°C

-100V

-4A

1

Single

43W

10 ns

27ns

17 ns

15 ns

20V

-100V

200pF

1.2Ohm

1.2 Ω

4.83mm

10.41mm

9.65mm

Contains Lead

IRF9Z24NSTRL vs IRF9510S

Certification

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IRF9Z24NSTRL Specification

Part Number	Manufacturers	Description	Stock	Price
IRF9Z24NSTRLPBF DISTI #V72:2272_13889923	Infineon Technologies AG	Trans MOSFET P-CH 55V 12A 3-Pin(2 Tab) D2PAK T/R RoHS: Compliant	396	1 $1.4323 10 $1.1177 25 $1.0059 100 $0.8377 250 $0.7539
IRF9Z24NSTRLPBF DISTI #V36:1790_13889923	Infineon Technologies AG	Trans MOSFET P-CH 55V 12A 3-Pin(2 Tab) D2PAK T/R RoHS: Compliant	0
IRF9Z24NSTRLPBF DISTI #IRF9Z24NSTRLPBFCT-ND	Infineon Technologies AG	MOSFET P-CH 55V 12A D2PAK RoHS: Compliant	2454	1 $1.44 10 $1.288 100 $1.0044
IRF9Z24NSTRLPBF DISTI #IRF9Z24NSTRLPBFDKR-ND	Infineon Technologies AG	MOSFET P-CH 55V 12A D2PAK RoHS: Compliant	2454	1 $1.44 10 $1.288 100 $1.0044
IRF9Z24NSTRLPBF DISTI #IRF9Z24NSTRLPBFTR-ND	Infineon Technologies AG	MOSFET P-CH 55V 12A D2PAK RoHS: Compliant	1600	800 $0.80558 1600 $0.63599 2400 $0.59359 5600 $0.56532
IRF9Z24NSTRL DISTI #IRF9Z24NSTRL-ND	Infineon Technologies AG	MOSFET P-CH 55V 12A D2PAK RoHS: Not Compliant	0
IRF9Z24NSTRLPBF DISTI #33138126	Infineon Technologies AG	Trans MOSFET P-CH 55V 12A 3-Pin(2 Tab) D2PAK T/R RoHS: Compliant	1600	800 $0.4603 1600 $0.4434 3200 $0.433
IRF9Z24NSTRLPBF DISTI #32675546	Infineon Technologies AG	Trans MOSFET P-CH 55V 12A 3-Pin(2 Tab) D2PAK T/R RoHS: Compliant	396	16 $1.2015 25 $1.0813 100 $0.9005 250 $0.8104
IRF9Z24NSTRLPBF DISTI #IRF9Z24NSTRLPBF	Infineon Technologies AG	Trans MOSFET P-CH 55V 12A 3-Pin(2 Tab) D2PAK T/R - RoHS: Compliant	0	800 $0.4649 1600 $0.4479 3200 $0.4319 4800 $0.4169 8000 $0.4099
IRF9Z24NSTRLPBF DISTI #IRF9Z24NSTRLPBF	Infineon Technologies AG	Trans MOSFET P-CH 55V 12A 3-Pin(2 Tab) D2PAK T/R ( RoHS: Compliant	0	800 $0.46143 1600 $0.44861 2400 $0.43649 4000 $0.425 8000 $0.41948 20000 $0.4141 40000 $0.40886
IRF9Z24NSTRLPBF DISTI #70018983	Infineon Technologies AG	IRF9Z24NSTRLPBF P-channel MOSFET Transistor, 12 A RoHS: Compliant	0	800 $1.36
IRF9Z24NSTRLPBF DISTI #942-IRF9Z24NSTRLPBF	Infineon Technologies AG	MOSFET MOSFT PCh -55V -12A 175mOhm 12.7nC RoHS: Compliant	990	1 $1.32 10 $1.13 100 $0.869 500 $0.768 800 $0.606 2400 $0.538 9600 $0.517
IRF9Z24NSTRLPBF DISTI #	Infineon Technologies AG	Single P-Channel 55 V 0.175 Ohm 19 nC HEXFET Power RoHS: Compliant	350	1 $1.14 50 $0.68 100 $0.62 250 $0.55 500 $0.5
IRF9Z24NSTRL DISTI #	International Rectifier	* FREE SHIPPING ORDERS OVER $100 * 12 A, 55 V,	800	1 $1.68 61 $0.588 341 $0.525
IRF9Z24NSTRLPBF DISTI #9154991P	Infineon Technologies AG	MOSFET P-CHANNEL HEXFET 55V 12A D2PAK, RL	490	100 $0.764 500 $0.687 1000 $0.545 2500 $0.389
IRF9Z24NSTRLPBF DISTI #1298481	Infineon Technologies AG	RoHS: Compliant	0	1 $2.03 10 $1.74 100 $1.34 500 $1.19
IRF9Z24NSTRLPBF DISTI #XSFP00000050488	Infineon Technologies AG	RoHS: Compliant	189	148 $0.8 189 $0.7556

IRF9Z24~~(17)~~
IRF9Z2~~(18)~~
IRF9Z~~(54)~~
IRF9~~(69)~~
IRF~~(69)~~

Infineon Technologies IRF9Z24NSTRL

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