Vishay Siliconix IRF9Z24
- Part Number:
- IRF9Z24
- Manufacturer:
- Vishay Siliconix
- Ventron No:
- 3071022-IRF9Z24
- Description:
- MOSFET P-CH 60V 11A TO-220AB
- Datasheet:
- IRF9Z24
Vishay Siliconix IRF9Z24 technical specifications, attributes, parameters and parts with similar specifications to Vishay Siliconix IRF9Z24.
- MountThrough Hole
- Mounting TypeThrough Hole
- Package / CaseTO-220-3
- Number of Pins3
- Supplier Device PackageTO-220AB
- Weight6.000006g
- Operating Temperature-55°C~175°C TJ
- PackagingTube
- Published2016
- Part StatusObsolete
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Max Operating Temperature175°C
- Min Operating Temperature-55°C
- Voltage - Rated DC-60V
- TechnologyMOSFET (Metal Oxide)
- Current Rating-11A
- Number of Channels1
- Power Dissipation-Max60W Tc
- Element ConfigurationSingle
- Turn On Delay Time13 ns
- FET TypeP-Channel
- Rds On (Max) @ Id, Vgs280mOhm @ 6.6A, 10V
- Vgs(th) (Max) @ Id4V @ 250μA
- Input Capacitance (Ciss) (Max) @ Vds570pF @ 25V
- Current - Continuous Drain (Id) @ 25°C11A Tc
- Gate Charge (Qg) (Max) @ Vgs19nC @ 10V
- Rise Time68ns
- Drain to Source Voltage (Vdss)60V
- Drive Voltage (Max Rds On,Min Rds On)10V
- Vgs (Max)±20V
- Fall Time (Typ)29 ns
- Turn-Off Delay Time15 ns
- Continuous Drain Current (ID)11A
- Gate to Source Voltage (Vgs)20V
- Input Capacitance570pF
- Drain to Source Resistance280mOhm
- Rds On Max280 mΩ
- Height9.01mm
- Length10.41mm
- Width4.7mm
- Radiation HardeningNo
- RoHS StatusNon-RoHS Compliant
- Lead FreeContains Lead
IRF9Z24 Overview
Op amps with either input grounded have a fixed input capacitance parameter, CI, and this device has a 570pF @ 25V maximal input capacitance.Devices can conduct a maximum continuous current of 3 amps in the drain area, so the continuous drain current (ID) for this device is 11A amps.It is [15 ns] because it takes time to charge the input capacitance of the device before drain current conduction can begin.Single MOSFETs transistor is the resistance between the drain and source of a MOSFET when the gate-to-source voltage (VGS) is applied to bias the device to the on state, and Single MOSFETs transistor is 280mOhm.A turn-on delay time of 13 ns indicates the time it takes for the input capacitance of the device to charge before drain current conduction starts.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.To operate this transistor, you will need a 60V drain to source voltage (Vdss).A device like this reduces its overall power consumption when it uses drive voltage (10V).
IRF9Z24 Features
a continuous drain current (ID) of 11A
the turn-off delay time is 15 ns
single MOSFETs transistor is 280mOhm
a 60V drain to source voltage (Vdss)
IRF9Z24 Applications
There are a lot of Vishay Siliconix
IRF9Z24 applications of single MOSFETs transistors.
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
Op amps with either input grounded have a fixed input capacitance parameter, CI, and this device has a 570pF @ 25V maximal input capacitance.Devices can conduct a maximum continuous current of 3 amps in the drain area, so the continuous drain current (ID) for this device is 11A amps.It is [15 ns] because it takes time to charge the input capacitance of the device before drain current conduction can begin.Single MOSFETs transistor is the resistance between the drain and source of a MOSFET when the gate-to-source voltage (VGS) is applied to bias the device to the on state, and Single MOSFETs transistor is 280mOhm.A turn-on delay time of 13 ns indicates the time it takes for the input capacitance of the device to charge before drain current conduction starts.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.To operate this transistor, you will need a 60V drain to source voltage (Vdss).A device like this reduces its overall power consumption when it uses drive voltage (10V).
IRF9Z24 Features
a continuous drain current (ID) of 11A
the turn-off delay time is 15 ns
single MOSFETs transistor is 280mOhm
a 60V drain to source voltage (Vdss)
IRF9Z24 Applications
There are a lot of Vishay Siliconix
IRF9Z24 applications of single MOSFETs transistors.
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
IRF9Z24 More Descriptions
Trans MOSFET P-CH 60V 11A 3-Pin(3 Tab) TO-220AB
French Electronic Distributor since 1988
French Electronic Distributor since 1988
The three parts on the right have similar specifications to IRF9Z24.
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ImagePart NumberManufacturerMountMounting TypePackage / CaseNumber of PinsSupplier Device PackageWeightOperating TemperaturePackagingPublishedPart StatusMoisture Sensitivity Level (MSL)Max Operating TemperatureMin Operating TemperatureVoltage - Rated DCTechnologyCurrent RatingNumber of ChannelsPower Dissipation-MaxElement ConfigurationTurn On Delay TimeFET TypeRds On (Max) @ Id, VgsVgs(th) (Max) @ IdInput Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25°CGate Charge (Qg) (Max) @ VgsRise TimeDrain to Source Voltage (Vdss)Drive Voltage (Max Rds On,Min Rds On)Vgs (Max)Fall Time (Typ)Turn-Off Delay TimeContinuous Drain Current (ID)Gate to Source Voltage (Vgs)Input CapacitanceDrain to Source ResistanceRds On MaxHeightLengthWidthRadiation HardeningRoHS StatusLead FreeSurface MountTransistor Element MaterialSeriesJESD-609 CodeNumber of TerminationsECCN CodeTerminal FinishAdditional FeatureHTS CodeTerminal PositionTerminal FormPeak Reflow Temperature (Cel)Time@Peak Reflow Temperature-Max (s)JESD-30 CodeQualification StatusNumber of ElementsConfigurationOperating ModeCase ConnectionTransistor ApplicationDrain Current-Max (Abs) (ID)Drain-source On Resistance-MaxPulsed Drain Current-Max (IDM)DS Breakdown Voltage-MinAvalanche Energy Rating (Eas)Max Power DissipationPbfree CodeSubcategoryReach Compliance CodePin CountView Compare
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IRF9Z24Through HoleThrough HoleTO-220-33TO-220AB6.000006g-55°C~175°C TJTube2016Obsolete1 (Unlimited)175°C-55°C-60VMOSFET (Metal Oxide)-11A160W TcSingle13 nsP-Channel280mOhm @ 6.6A, 10V4V @ 250μA570pF @ 25V11A Tc19nC @ 10V68ns60V10V±20V29 ns15 ns11A20V570pF280mOhm280 mΩ9.01mm10.41mm4.7mmNoNon-RoHS CompliantContains Lead-------------------------------
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-Surface MountTO-263-3, D2Pak (2 Leads Tab), TO-263AB----55°C~175°C TJTube1998Obsolete1 (Unlimited)---MOSFET (Metal Oxide)--3.8W Ta 48W Tc--P-Channel480m Ω @ 4A, 10V4V @ 250μA350pF @ 25V6.8A Tc27nC @ 10V-100V10V±20V-----------Non-RoHS Compliant-YESSILICONHEXFET®e02EAR99Tin/Lead (Sn/Pb)AVALANCHE RATED, HIGH RELIABILITY8541.29.00.95SINGLEGULL WING22530R-PSSO-G2Not Qualified1SINGLE WITH BUILT-IN DIODEENHANCEMENT MODEDRAINSWITCHING6.8A0.48Ohm27A100V140 mJ-----
-
Through HoleThrough HoleTO-262-3 Long Leads, I2Pak, TO-262AA----55°C~175°C TJTube2016Active1 (Unlimited)---MOSFET (Metal Oxide)-----P-Channel300m Ω @ 7.2A, 10V4V @ 250μA860pF @ 25V12A Tc38nC @ 10V-100V10V±20V--12A--------Non-RoHS Compliant--------------------------3.7W----
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Surface MountSurface MountTO-263-3, D2Pak (2 Leads Tab), TO-263AB----55°C~175°C TJTape & Reel (TR)2016Active1 (Unlimited)---MOSFET (Metal Oxide)--3.7W Ta 150W Tc--P-Channel200m Ω @ 11A, 10V4V @ 250μA1400pF @ 25V19A Tc61nC @ 10V-100V10V±20V--19A--------Non-RoHS Compliant--SILICON--2EAR99-AVALANCHE RATED-SINGLEGULL WING225NOT SPECIFIEDR-PSSO-G2Not Qualified1SINGLE WITH BUILT-IN DIODEENHANCEMENT MODEDRAINSWITCHING-0.2Ohm72A100V640 mJ-noOther Transistorsunknown3
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