IRF9Z24

Vishay Siliconix IRF9Z24

Part Number:
IRF9Z24
Manufacturer:
Vishay Siliconix
Ventron No:
3071022-IRF9Z24
Description:
MOSFET P-CH 60V 11A TO-220AB
ECAD Model:
Datasheet:
IRF9Z24

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Specifications
Vishay Siliconix IRF9Z24 technical specifications, attributes, parameters and parts with similar specifications to Vishay Siliconix IRF9Z24.
  • Mount
    Through Hole
  • Mounting Type
    Through Hole
  • Package / Case
    TO-220-3
  • Number of Pins
    3
  • Supplier Device Package
    TO-220AB
  • Weight
    6.000006g
  • Operating Temperature
    -55°C~175°C TJ
  • Packaging
    Tube
  • Published
    2016
  • Part Status
    Obsolete
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Max Operating Temperature
    175°C
  • Min Operating Temperature
    -55°C
  • Voltage - Rated DC
    -60V
  • Technology
    MOSFET (Metal Oxide)
  • Current Rating
    -11A
  • Number of Channels
    1
  • Power Dissipation-Max
    60W Tc
  • Element Configuration
    Single
  • Turn On Delay Time
    13 ns
  • FET Type
    P-Channel
  • Rds On (Max) @ Id, Vgs
    280mOhm @ 6.6A, 10V
  • Vgs(th) (Max) @ Id
    4V @ 250μA
  • Input Capacitance (Ciss) (Max) @ Vds
    570pF @ 25V
  • Current - Continuous Drain (Id) @ 25°C
    11A Tc
  • Gate Charge (Qg) (Max) @ Vgs
    19nC @ 10V
  • Rise Time
    68ns
  • Drain to Source Voltage (Vdss)
    60V
  • Drive Voltage (Max Rds On,Min Rds On)
    10V
  • Vgs (Max)
    ±20V
  • Fall Time (Typ)
    29 ns
  • Turn-Off Delay Time
    15 ns
  • Continuous Drain Current (ID)
    11A
  • Gate to Source Voltage (Vgs)
    20V
  • Input Capacitance
    570pF
  • Drain to Source Resistance
    280mOhm
  • Rds On Max
    280 mΩ
  • Height
    9.01mm
  • Length
    10.41mm
  • Width
    4.7mm
  • Radiation Hardening
    No
  • RoHS Status
    Non-RoHS Compliant
  • Lead Free
    Contains Lead
Description
IRF9Z24 Overview
Op amps with either input grounded have a fixed input capacitance parameter, CI, and this device has a 570pF @ 25V maximal input capacitance.Devices can conduct a maximum continuous current of 3 amps in the drain area, so the continuous drain current (ID) for this device is 11A amps.It is [15 ns] because it takes time to charge the input capacitance of the device before drain current conduction can begin.Single MOSFETs transistor is the resistance between the drain and source of a MOSFET when the gate-to-source voltage (VGS) is applied to bias the device to the on state, and Single MOSFETs transistor is 280mOhm.A turn-on delay time of 13 ns indicates the time it takes for the input capacitance of the device to charge before drain current conduction starts.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.To operate this transistor, you will need a 60V drain to source voltage (Vdss).A device like this reduces its overall power consumption when it uses drive voltage (10V).

IRF9Z24 Features
a continuous drain current (ID) of 11A
the turn-off delay time is 15 ns
single MOSFETs transistor is 280mOhm
a 60V drain to source voltage (Vdss)


IRF9Z24 Applications
There are a lot of Vishay Siliconix
IRF9Z24 applications of single MOSFETs transistors.


Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
IRF9Z24 More Descriptions
Trans MOSFET P-CH 60V 11A 3-Pin(3 Tab) TO-220AB
French Electronic Distributor since 1988
Product Comparison
The three parts on the right have similar specifications to IRF9Z24.
  • Image
    Part Number
    Manufacturer
    Mount
    Mounting Type
    Package / Case
    Number of Pins
    Supplier Device Package
    Weight
    Operating Temperature
    Packaging
    Published
    Part Status
    Moisture Sensitivity Level (MSL)
    Max Operating Temperature
    Min Operating Temperature
    Voltage - Rated DC
    Technology
    Current Rating
    Number of Channels
    Power Dissipation-Max
    Element Configuration
    Turn On Delay Time
    FET Type
    Rds On (Max) @ Id, Vgs
    Vgs(th) (Max) @ Id
    Input Capacitance (Ciss) (Max) @ Vds
    Current - Continuous Drain (Id) @ 25°C
    Gate Charge (Qg) (Max) @ Vgs
    Rise Time
    Drain to Source Voltage (Vdss)
    Drive Voltage (Max Rds On,Min Rds On)
    Vgs (Max)
    Fall Time (Typ)
    Turn-Off Delay Time
    Continuous Drain Current (ID)
    Gate to Source Voltage (Vgs)
    Input Capacitance
    Drain to Source Resistance
    Rds On Max
    Height
    Length
    Width
    Radiation Hardening
    RoHS Status
    Lead Free
    Surface Mount
    Transistor Element Material
    Series
    JESD-609 Code
    Number of Terminations
    ECCN Code
    Terminal Finish
    Additional Feature
    HTS Code
    Terminal Position
    Terminal Form
    Peak Reflow Temperature (Cel)
    Time@Peak Reflow Temperature-Max (s)
    JESD-30 Code
    Qualification Status
    Number of Elements
    Configuration
    Operating Mode
    Case Connection
    Transistor Application
    Drain Current-Max (Abs) (ID)
    Drain-source On Resistance-Max
    Pulsed Drain Current-Max (IDM)
    DS Breakdown Voltage-Min
    Avalanche Energy Rating (Eas)
    Max Power Dissipation
    Pbfree Code
    Subcategory
    Reach Compliance Code
    Pin Count
    View Compare
  • IRF9Z24
    IRF9Z24
    Through Hole
    Through Hole
    TO-220-3
    3
    TO-220AB
    6.000006g
    -55°C~175°C TJ
    Tube
    2016
    Obsolete
    1 (Unlimited)
    175°C
    -55°C
    -60V
    MOSFET (Metal Oxide)
    -11A
    1
    60W Tc
    Single
    13 ns
    P-Channel
    280mOhm @ 6.6A, 10V
    4V @ 250μA
    570pF @ 25V
    11A Tc
    19nC @ 10V
    68ns
    60V
    10V
    ±20V
    29 ns
    15 ns
    11A
    20V
    570pF
    280mOhm
    280 mΩ
    9.01mm
    10.41mm
    4.7mm
    No
    Non-RoHS Compliant
    Contains Lead
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • IRF9520NS
    -
    Surface Mount
    TO-263-3, D2Pak (2 Leads Tab), TO-263AB
    -
    -
    -
    -55°C~175°C TJ
    Tube
    1998
    Obsolete
    1 (Unlimited)
    -
    -
    -
    MOSFET (Metal Oxide)
    -
    -
    3.8W Ta 48W Tc
    -
    -
    P-Channel
    480m Ω @ 4A, 10V
    4V @ 250μA
    350pF @ 25V
    6.8A Tc
    27nC @ 10V
    -
    100V
    10V
    ±20V
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    Non-RoHS Compliant
    -
    YES
    SILICON
    HEXFET®
    e0
    2
    EAR99
    Tin/Lead (Sn/Pb)
    AVALANCHE RATED, HIGH RELIABILITY
    8541.29.00.95
    SINGLE
    GULL WING
    225
    30
    R-PSSO-G2
    Not Qualified
    1
    SINGLE WITH BUILT-IN DIODE
    ENHANCEMENT MODE
    DRAIN
    SWITCHING
    6.8A
    0.48Ohm
    27A
    100V
    140 mJ
    -
    -
    -
    -
    -
  • IRF9530L
    Through Hole
    Through Hole
    TO-262-3 Long Leads, I2Pak, TO-262AA
    -
    -
    -
    -55°C~175°C TJ
    Tube
    2016
    Active
    1 (Unlimited)
    -
    -
    -
    MOSFET (Metal Oxide)
    -
    -
    -
    -
    -
    P-Channel
    300m Ω @ 7.2A, 10V
    4V @ 250μA
    860pF @ 25V
    12A Tc
    38nC @ 10V
    -
    100V
    10V
    ±20V
    -
    -
    12A
    -
    -
    -
    -
    -
    -
    -
    -
    Non-RoHS Compliant
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    3.7W
    -
    -
    -
    -
  • IRF9540STRR
    Surface Mount
    Surface Mount
    TO-263-3, D2Pak (2 Leads Tab), TO-263AB
    -
    -
    -
    -55°C~175°C TJ
    Tape & Reel (TR)
    2016
    Active
    1 (Unlimited)
    -
    -
    -
    MOSFET (Metal Oxide)
    -
    -
    3.7W Ta 150W Tc
    -
    -
    P-Channel
    200m Ω @ 11A, 10V
    4V @ 250μA
    1400pF @ 25V
    19A Tc
    61nC @ 10V
    -
    100V
    10V
    ±20V
    -
    -
    19A
    -
    -
    -
    -
    -
    -
    -
    -
    Non-RoHS Compliant
    -
    -
    SILICON
    -
    -
    2
    EAR99
    -
    AVALANCHE RATED
    -
    SINGLE
    GULL WING
    225
    NOT SPECIFIED
    R-PSSO-G2
    Not Qualified
    1
    SINGLE WITH BUILT-IN DIODE
    ENHANCEMENT MODE
    DRAIN
    SWITCHING
    -
    0.2Ohm
    72A
    100V
    640 mJ
    -
    no
    Other Transistors
    unknown
    3
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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