Vishay Siliconix IRF9640STRLPBF

Name: IRF9640STRLPBF
Brand: Vishay Siliconix
SKU: 2484271-IRF9640STRLPBF
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: IRF9640STRLPBF

Manufacturer:: Vishay Siliconix

Ventron No:: 2484271-IRF9640STRLPBF

Description:: MOSFET P-CH 200V 11A D2PAK

ECAD Model:

Datasheet:: IRF9640S,L, SiHF9640S,L

Specifications

Vishay Siliconix IRF9640STRLPBF technical specifications, attributes, parameters and parts with similar specifications to Vishay Siliconix IRF9640STRLPBF.

Factory Lead Time
8 Weeks
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
TO-263-3, D2Pak (2 Leads Tab), TO-263AB
Number of Pins
3
Supplier Device Package
D2PAK
Weight
1.946308g
Operating Temperature
-55°C~150°C TJ
Packaging
Tape & Reel (TR)
Published
2014
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Termination
SMD/SMT
Resistance
500mOhm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Technology
MOSFET (Metal Oxide)
Number of Elements
1
Number of Channels
1
Power Dissipation-Max
3W Ta 125W Tc
Element Configuration
Single
Power Dissipation
3W
Turn On Delay Time
14 ns
FET Type
P-Channel
Rds On (Max) @ Id, Vgs
500mOhm @ 6.6A, 10V
Vgs(th) (Max) @ Id
4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds
1200pF @ 25V
Current - Continuous Drain (Id) @ 25°C
11A Tc
Gate Charge (Qg) (Max) @ Vgs
44nC @ 10V
Rise Time
43ns
Drain to Source Voltage (Vdss)
200V
Drive Voltage (Max Rds On,Min Rds On)
10V
Vgs (Max)
±20V
Fall Time (Typ)
38 ns
Turn-Off Delay Time
39 ns
Continuous Drain Current (ID)
11A
Threshold Voltage
4V
Gate to Source Voltage (Vgs)
20V
Drain to Source Breakdown Voltage
-200V
Dual Supply Voltage
200V
Input Capacitance
1.2nF
Drain to Source Resistance
500mOhm
Rds On Max
500 mΩ
Nominal Vgs
4 V
Height
4.83mm
Length
10.67mm
Width
9.65mm
REACH SVHC
Unknown
Radiation Hardening
No
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free

Description

IRF9640STRLPBF Overview
The maximum input capacitance of this device is 1200pF @ 25V, because the input capacitance of an op amp is defined as the difference between the input terminals with one input grounded.Continuous drain current (ID) is the maximum continuous current (ID) the device can conduct, and it is 11A.When VGS=-200V, and ID flows to VDS at -200VVDS, the drain-source breakdown voltage is -200V in this device.Before drain current conduction can begin, the device's turn-off delay time must be charged up to full capacitance. This value is 39 ns.MOSFETs exhibit Drain-to-Source Resistance when a specific gate-to-source voltage (VGS) is applied to bias them into the on state, and this device's resistance is 500mOhm.During device turn-on, the input capacitance must be charged for a period of time before drain current conduction can begin, so its delay time is 14 ns seconds.Single MOSFETs transistor is the voltage across the gate-source terminal of a transistor that determines the gate-source voltage, VGS.This transistor's threshold voltage is 4V volts, which indicates that a transistor is ready to perform any of its operations at that voltage.The drain-to-source voltage (Vdss) of this transistor needs to be at 200V in order to operate.Using drive voltage (10V), this device helps reduce its power consumption.

IRF9640STRLPBF Features
a continuous drain current (ID) of 11A
a drain-to-source breakdown voltage of -200V voltage
the turn-off delay time is 39 ns
single MOSFETs transistor is 500mOhm
a threshold voltage of 4V
a 200V drain to source voltage (Vdss)

IRF9640STRLPBF Applications
There are a lot of Vishay Siliconix
IRF9640STRLPBF applications of single MOSFETs transistors.

Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,

IRF9640STRLPBF More Descriptions

Single P-Channel 200 V 0.5 Ohms Surface Mount Power Mosfet - D2PAK-3
IRF9640STRLPBF P-channel MOSFET Transistor, 6.8 A, 200 V, 3-Pin D2PAK | Siliconix / Vishay IRF9640STRLPBF
Trans MOSFET P-CH 200V 11A 3-Pin(2 Tab) D2PAK T/R
MOSFET, P, 200V, D2-PAK; Transistor Polarity: P Channel; Continuous Drain Current Id: 11A; Drain Source Voltage Vds: -200V; On Resistance Rds(on): 0.5ohm; Rds(on) Test Voltage Vgs: -10V; Threshold Voltage Vgs: 4V; Power Dissip
Power Field-Effect Transistor, 11A I(D), 200V, 0.5ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB

Product Comparison

The three parts on the right have similar specifications to IRF9640STRLPBF.

Image

Part Number

Manufacturer

Factory Lead Time

Mount

Mounting Type

Package / Case

Number of Pins

Supplier Device Package

Weight

Operating Temperature

Packaging

Published

Part Status

Moisture Sensitivity Level (MSL)

Termination

Resistance

Max Operating Temperature

Min Operating Temperature

Technology

Number of Elements

Number of Channels

Power Dissipation-Max

Element Configuration

Power Dissipation

Turn On Delay Time

FET Type

Rds On (Max) @ Id, Vgs

Vgs(th) (Max) @ Id

Input Capacitance (Ciss) (Max) @ Vds

Current - Continuous Drain (Id) @ 25°C

Gate Charge (Qg) (Max) @ Vgs

Rise Time

Drain to Source Voltage (Vdss)

Drive Voltage (Max Rds On,Min Rds On)

Vgs (Max)

Fall Time (Typ)

Turn-Off Delay Time

Continuous Drain Current (ID)

Threshold Voltage

Gate to Source Voltage (Vgs)

Drain to Source Breakdown Voltage

Dual Supply Voltage

Input Capacitance

Drain to Source Resistance

Rds On Max

Nominal Vgs

Height

Length

Width

REACH SVHC

Radiation Hardening

RoHS Status

Lead Free

Transistor Element Material

Pbfree Code

Number of Terminations

ECCN Code

Additional Feature

Subcategory

Terminal Position

Terminal Form

Peak Reflow Temperature (Cel)

Reach Compliance Code

Time@Peak Reflow Temperature-Max (s)

Pin Count

JESD-30 Code

Qualification Status

Configuration

Operating Mode

Case Connection

Transistor Application

Drain-source On Resistance-Max

Pulsed Drain Current-Max (IDM)

DS Breakdown Voltage-Min

Avalanche Energy Rating (Eas)

Max Power Dissipation

Voltage - Rated DC

Current Rating

View Compare
IRF9640STRLPBF

Vishay Siliconix

8 Weeks

Surface Mount

Surface Mount

TO-263-3, D2Pak (2 Leads Tab), TO-263AB

3

D2PAK

1.946308g

-55°C~150°C TJ

Tape & Reel (TR)

2014

Active

1 (Unlimited)

SMD/SMT

500mOhm

150°C

-55°C

MOSFET (Metal Oxide)

1

1

3W Ta 125W Tc

Single

3W

14 ns

P-Channel

500mOhm @ 6.6A, 10V

4V @ 250μA

1200pF @ 25V

11A Tc

44nC @ 10V

43ns

200V

10V

±20V

38 ns

39 ns

11A

4V

20V

-200V

200V

1.2nF

500mOhm

500 mΩ

4 V

4.83mm

10.67mm

9.65mm

Unknown

No

ROHS3 Compliant

Lead Free

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-
IRF9540STRR

Vishay Siliconix

-

Surface Mount

Surface Mount

TO-263-3, D2Pak (2 Leads Tab), TO-263AB

-

-

-

-55°C~175°C TJ

Tape & Reel (TR)

2016

Active

1 (Unlimited)

-

-

-

-

MOSFET (Metal Oxide)

1

-

3.7W Ta 150W Tc

-

-

-

P-Channel

200m Ω @ 11A, 10V

4V @ 250μA

1400pF @ 25V

19A Tc

61nC @ 10V

-

100V

10V

±20V

-

-

19A

-

-

-

-

-

-

-

-

-

-

-

-

-

Non-RoHS Compliant

-

SILICON

no

2

EAR99

AVALANCHE RATED

Other Transistors

SINGLE

GULL WING

225

unknown

NOT SPECIFIED

3

R-PSSO-G2

Not Qualified

SINGLE WITH BUILT-IN DIODE

ENHANCEMENT MODE

DRAIN

SWITCHING

0.2Ohm

72A

100V

640 mJ

-

-

-

IRF9640STRLPBF vs IRF9540STRR
IRF9540L

Vishay Siliconix

-

Through Hole

Through Hole

TO-262-3 Long Leads, I2Pak, TO-262AA

-

I2PAK

-

-55°C~175°C TJ

Tube

2016

Active

1 (Unlimited)

-

-

-

-

MOSFET (Metal Oxide)

-

-

-

-

-

-

P-Channel

200mOhm @ 11A, 10V

4V @ 250μA

1400pF @ 25V

19A Tc

61nC @ 10V

-

100V

10V

±20V

-

-

19A

-

-

-

-

1.4nF

-

200 mΩ

-

-

-

-

-

-

Non-RoHS Compliant

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

3.7W

-

-

IRF9640STRLPBF vs IRF9540L
IRF9510S

Vishay Siliconix

-

Surface Mount

Surface Mount

TO-263-3, D2Pak (2 Leads Tab), TO-263AB

-

D2PAK

1.437803g

-55°C~175°C TJ

Tube

2016

Obsolete

1 (Unlimited)

-

-

175°C

-55°C

MOSFET (Metal Oxide)

-

1

3.7W Ta 43W Tc

Single

43W

10 ns

P-Channel

1.2Ohm @ 2.4A, 10V

4V @ 250μA

200pF @ 25V

4A Tc

8.7nC @ 10V

27ns

100V

10V

±20V

17 ns

15 ns

4A

-

20V

-100V

-

200pF

1.2Ohm

1.2 Ω

-

4.83mm

10.41mm

9.65mm

-

-

Non-RoHS Compliant

Contains Lead

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-100V

-4A

IRF9640STRLPBF vs IRF9510S