Vishay Siliconix IRF9640S
- Part Number:
- IRF9640S
- Manufacturer:
- Vishay Siliconix
- Ventron No:
- 2488309-IRF9640S
- Description:
- MOSFET P-CH 200V 11A D2PAK
- Datasheet:
- IRF9640S,L, SiHF9640S,L
Vishay Siliconix IRF9640S technical specifications, attributes, parameters and parts with similar specifications to Vishay Siliconix IRF9640S.
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / CaseTO-263-3, D2Pak (2 Leads Tab), TO-263AB
- Number of Pins3
- Supplier Device PackageD2PAK
- Weight1.437803g
- Operating Temperature-55°C~150°C TJ
- PackagingTube
- Published2016
- Part StatusObsolete
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Max Operating Temperature150°C
- Min Operating Temperature-55°C
- Voltage - Rated DC-200V
- TechnologyMOSFET (Metal Oxide)
- Current Rating-11A
- Number of Channels1
- Power Dissipation-Max3W Ta 125W Tc
- Element ConfigurationSingle
- Power Dissipation125W
- Turn On Delay Time14 ns
- FET TypeP-Channel
- Rds On (Max) @ Id, Vgs500mOhm @ 6.6A, 10V
- Vgs(th) (Max) @ Id4V @ 250μA
- Input Capacitance (Ciss) (Max) @ Vds1200pF @ 25V
- Current - Continuous Drain (Id) @ 25°C11A Tc
- Gate Charge (Qg) (Max) @ Vgs44nC @ 10V
- Rise Time43ns
- Drain to Source Voltage (Vdss)200V
- Drive Voltage (Max Rds On,Min Rds On)10V
- Vgs (Max)±20V
- Fall Time (Typ)38 ns
- Turn-Off Delay Time39 ns
- Continuous Drain Current (ID)11A
- Gate to Source Voltage (Vgs)20V
- Drain to Source Breakdown Voltage-200V
- Input Capacitance1.2nF
- Drain to Source Resistance500mOhm
- Rds On Max500 mΩ
- Height4.83mm
- Length10.67mm
- Width9.65mm
- RoHS StatusNon-RoHS Compliant
- Lead FreeContains Lead
IRF9640S Overview
CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 1200pF @ 25V.In this device, the drain current (ID) is equal to the continuous current transistor can conduct.This device has -200V drain-to-source breakdown voltage, where VDS corresponds to the ID at which a specified value of ID flows and VGS equals -200V.As a result of its turn-off delay time, which is 39 ns, the device has taken time to charge its input capacitance before drain current conduction begins.In a MOSFET, Drain to Source Resistance is the resistance between the drain and the source when gate-to-source voltage (VGS) is applied to bias it into the on state; in this device, this resistance is 500mOhm.Input capacitance charge delays drain current conduction until the time it takes to charge input capacitance reaches 14 ns.Gate-source voltages (VGS) are voltages that fall across the gate-source terminal of FET transistors. VGS is sometimes 20VV.The transistor must receive a 200V drain to source voltage (Vdss) in order to function.In addition to reducing power consumption, this device uses drive voltage (10V).
IRF9640S Features
a continuous drain current (ID) of 11A
a drain-to-source breakdown voltage of -200V voltage
the turn-off delay time is 39 ns
single MOSFETs transistor is 500mOhm
a 200V drain to source voltage (Vdss)
IRF9640S Applications
There are a lot of Vishay Siliconix
IRF9640S applications of single MOSFETs transistors.
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
Lighting, Server, Telecom and UPS.
CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 1200pF @ 25V.In this device, the drain current (ID) is equal to the continuous current transistor can conduct.This device has -200V drain-to-source breakdown voltage, where VDS corresponds to the ID at which a specified value of ID flows and VGS equals -200V.As a result of its turn-off delay time, which is 39 ns, the device has taken time to charge its input capacitance before drain current conduction begins.In a MOSFET, Drain to Source Resistance is the resistance between the drain and the source when gate-to-source voltage (VGS) is applied to bias it into the on state; in this device, this resistance is 500mOhm.Input capacitance charge delays drain current conduction until the time it takes to charge input capacitance reaches 14 ns.Gate-source voltages (VGS) are voltages that fall across the gate-source terminal of FET transistors. VGS is sometimes 20VV.The transistor must receive a 200V drain to source voltage (Vdss) in order to function.In addition to reducing power consumption, this device uses drive voltage (10V).
IRF9640S Features
a continuous drain current (ID) of 11A
a drain-to-source breakdown voltage of -200V voltage
the turn-off delay time is 39 ns
single MOSFETs transistor is 500mOhm
a 200V drain to source voltage (Vdss)
IRF9640S Applications
There are a lot of Vishay Siliconix
IRF9640S applications of single MOSFETs transistors.
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
Lighting, Server, Telecom and UPS.
IRF9640S More Descriptions
Trans MOSFET P-CH 200V 11A 3-Pin (2 Tab) SMD-220
Power Field-Effect Transistor, 11A I(D), 200V, 0.5ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
MOSFET; Transistor Polarity:P Channel; Drain Source Voltage, Vds:-200V; Continuous Drain Current, Id:-11A; On-Resistance, Rds(on):500mohm; Rds(on) Test Voltage, Vgs:-10V; Package/Case:D2-PAK; Drain Source On Resistance @ 10V:500mohm RoHS Compliant: No
Power Field-Effect Transistor, 11A I(D), 200V, 0.5ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
MOSFET; Transistor Polarity:P Channel; Drain Source Voltage, Vds:-200V; Continuous Drain Current, Id:-11A; On-Resistance, Rds(on):500mohm; Rds(on) Test Voltage, Vgs:-10V; Package/Case:D2-PAK; Drain Source On Resistance @ 10V:500mohm RoHS Compliant: No
The three parts on the right have similar specifications to IRF9640S.
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ImagePart NumberManufacturerMountMounting TypePackage / CaseNumber of PinsSupplier Device PackageWeightOperating TemperaturePackagingPublishedPart StatusMoisture Sensitivity Level (MSL)Max Operating TemperatureMin Operating TemperatureVoltage - Rated DCTechnologyCurrent RatingNumber of ChannelsPower Dissipation-MaxElement ConfigurationPower DissipationTurn On Delay TimeFET TypeRds On (Max) @ Id, VgsVgs(th) (Max) @ IdInput Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25°CGate Charge (Qg) (Max) @ VgsRise TimeDrain to Source Voltage (Vdss)Drive Voltage (Max Rds On,Min Rds On)Vgs (Max)Fall Time (Typ)Turn-Off Delay TimeContinuous Drain Current (ID)Gate to Source Voltage (Vgs)Drain to Source Breakdown VoltageInput CapacitanceDrain to Source ResistanceRds On MaxHeightLengthWidthRoHS StatusLead FreeSurface MountTransistor Element MaterialSeriesJESD-609 CodeNumber of TerminationsECCN CodeTerminal FinishAdditional FeatureHTS CodeTerminal PositionTerminal FormPeak Reflow Temperature (Cel)Time@Peak Reflow Temperature-Max (s)JESD-30 CodeQualification StatusNumber of ElementsConfigurationOperating ModeCase ConnectionTransistor ApplicationDrain Current-Max (Abs) (ID)Drain-source On Resistance-MaxPulsed Drain Current-Max (IDM)DS Breakdown Voltage-MinAvalanche Energy Rating (Eas)JEDEC-95 CodeMax Power DissipationView Compare
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IRF9640SSurface MountSurface MountTO-263-3, D2Pak (2 Leads Tab), TO-263AB3D2PAK1.437803g-55°C~150°C TJTube2016Obsolete1 (Unlimited)150°C-55°C-200VMOSFET (Metal Oxide)-11A13W Ta 125W TcSingle125W14 nsP-Channel500mOhm @ 6.6A, 10V4V @ 250μA1200pF @ 25V11A Tc44nC @ 10V43ns200V10V±20V38 ns39 ns11A20V-200V1.2nF500mOhm500 mΩ4.83mm10.67mm9.65mmNon-RoHS CompliantContains Lead----------------------------
-
-Surface MountTO-263-3, D2Pak (2 Leads Tab), TO-263AB----55°C~175°C TJTube1998Obsolete1 (Unlimited)---MOSFET (Metal Oxide)--3.8W Ta 48W Tc---P-Channel480m Ω @ 4A, 10V4V @ 250μA350pF @ 25V6.8A Tc27nC @ 10V-100V10V±20V-----------Non-RoHS Compliant-YESSILICONHEXFET®e02EAR99Tin/Lead (Sn/Pb)AVALANCHE RATED, HIGH RELIABILITY8541.29.00.95SINGLEGULL WING22530R-PSSO-G2Not Qualified1SINGLE WITH BUILT-IN DIODEENHANCEMENT MODEDRAINSWITCHING6.8A0.48Ohm27A100V140 mJ--
-
-Surface Mount8-SOIC (0.154, 3.90mm Width)----55°C~150°C TJTube1997Obsolete1 (Unlimited)---MOSFET (Metal Oxide)--2.5W Ta---N-Channel30m Ω @ 7A, 10V1V @ 250μA550pF @ 25V7A Ta27nC @ 10V-30V4.5V 10V±20V-----------Non-RoHS Compliant-YESSILICONHEXFET®-8EAR99NOT SPECIFIEDHIGH RELIABILITY-DUALGULL WINGNOT SPECIFIEDNOT SPECIFIEDR-PDSO-G8Not Qualified1SINGLE WITH BUILT-IN DIODEENHANCEMENT MODE-SWITCHING7A0.03Ohm37A30V70 mJMS-012AA-
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Through HoleThrough HoleTO-262-3 Long Leads, I2Pak, TO-262AA----55°C~175°C TJTube2016Active1 (Unlimited)---MOSFET (Metal Oxide)------P-Channel300m Ω @ 7.2A, 10V4V @ 250μA860pF @ 25V12A Tc38nC @ 10V-100V10V±20V--12A--------Non-RoHS Compliant---------------------------3.7W
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