IRF9640S

Vishay Siliconix IRF9640S

Part Number:
IRF9640S
Manufacturer:
Vishay Siliconix
Ventron No:
2488309-IRF9640S
Description:
MOSFET P-CH 200V 11A D2PAK
ECAD Model:
Datasheet:
IRF9640S,L, SiHF9640S,L

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Specifications
Vishay Siliconix IRF9640S technical specifications, attributes, parameters and parts with similar specifications to Vishay Siliconix IRF9640S.
  • Mount
    Surface Mount
  • Mounting Type
    Surface Mount
  • Package / Case
    TO-263-3, D2Pak (2 Leads Tab), TO-263AB
  • Number of Pins
    3
  • Supplier Device Package
    D2PAK
  • Weight
    1.437803g
  • Operating Temperature
    -55°C~150°C TJ
  • Packaging
    Tube
  • Published
    2016
  • Part Status
    Obsolete
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Max Operating Temperature
    150°C
  • Min Operating Temperature
    -55°C
  • Voltage - Rated DC
    -200V
  • Technology
    MOSFET (Metal Oxide)
  • Current Rating
    -11A
  • Number of Channels
    1
  • Power Dissipation-Max
    3W Ta 125W Tc
  • Element Configuration
    Single
  • Power Dissipation
    125W
  • Turn On Delay Time
    14 ns
  • FET Type
    P-Channel
  • Rds On (Max) @ Id, Vgs
    500mOhm @ 6.6A, 10V
  • Vgs(th) (Max) @ Id
    4V @ 250μA
  • Input Capacitance (Ciss) (Max) @ Vds
    1200pF @ 25V
  • Current - Continuous Drain (Id) @ 25°C
    11A Tc
  • Gate Charge (Qg) (Max) @ Vgs
    44nC @ 10V
  • Rise Time
    43ns
  • Drain to Source Voltage (Vdss)
    200V
  • Drive Voltage (Max Rds On,Min Rds On)
    10V
  • Vgs (Max)
    ±20V
  • Fall Time (Typ)
    38 ns
  • Turn-Off Delay Time
    39 ns
  • Continuous Drain Current (ID)
    11A
  • Gate to Source Voltage (Vgs)
    20V
  • Drain to Source Breakdown Voltage
    -200V
  • Input Capacitance
    1.2nF
  • Drain to Source Resistance
    500mOhm
  • Rds On Max
    500 mΩ
  • Height
    4.83mm
  • Length
    10.67mm
  • Width
    9.65mm
  • RoHS Status
    Non-RoHS Compliant
  • Lead Free
    Contains Lead
Description
IRF9640S Overview
CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 1200pF @ 25V.In this device, the drain current (ID) is equal to the continuous current transistor can conduct.This device has -200V drain-to-source breakdown voltage, where VDS corresponds to the ID at which a specified value of ID flows and VGS equals -200V.As a result of its turn-off delay time, which is 39 ns, the device has taken time to charge its input capacitance before drain current conduction begins.In a MOSFET, Drain to Source Resistance is the resistance between the drain and the source when gate-to-source voltage (VGS) is applied to bias it into the on state; in this device, this resistance is 500mOhm.Input capacitance charge delays drain current conduction until the time it takes to charge input capacitance reaches 14 ns.Gate-source voltages (VGS) are voltages that fall across the gate-source terminal of FET transistors. VGS is sometimes 20VV.The transistor must receive a 200V drain to source voltage (Vdss) in order to function.In addition to reducing power consumption, this device uses drive voltage (10V).

IRF9640S Features
a continuous drain current (ID) of 11A
a drain-to-source breakdown voltage of -200V voltage
the turn-off delay time is 39 ns
single MOSFETs transistor is 500mOhm
a 200V drain to source voltage (Vdss)


IRF9640S Applications
There are a lot of Vishay Siliconix
IRF9640S applications of single MOSFETs transistors.


DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
Lighting, Server, Telecom and UPS.
IRF9640S More Descriptions
Trans MOSFET P-CH 200V 11A 3-Pin (2 Tab) SMD-220
Power Field-Effect Transistor, 11A I(D), 200V, 0.5ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
MOSFET; Transistor Polarity:P Channel; Drain Source Voltage, Vds:-200V; Continuous Drain Current, Id:-11A; On-Resistance, Rds(on):500mohm; Rds(on) Test Voltage, Vgs:-10V; Package/Case:D2-PAK; Drain Source On Resistance @ 10V:500mohm RoHS Compliant: No
Product Comparison
The three parts on the right have similar specifications to IRF9640S.
  • Image
    Part Number
    Manufacturer
    Mount
    Mounting Type
    Package / Case
    Number of Pins
    Supplier Device Package
    Weight
    Operating Temperature
    Packaging
    Published
    Part Status
    Moisture Sensitivity Level (MSL)
    Max Operating Temperature
    Min Operating Temperature
    Voltage - Rated DC
    Technology
    Current Rating
    Number of Channels
    Power Dissipation-Max
    Element Configuration
    Power Dissipation
    Turn On Delay Time
    FET Type
    Rds On (Max) @ Id, Vgs
    Vgs(th) (Max) @ Id
    Input Capacitance (Ciss) (Max) @ Vds
    Current - Continuous Drain (Id) @ 25°C
    Gate Charge (Qg) (Max) @ Vgs
    Rise Time
    Drain to Source Voltage (Vdss)
    Drive Voltage (Max Rds On,Min Rds On)
    Vgs (Max)
    Fall Time (Typ)
    Turn-Off Delay Time
    Continuous Drain Current (ID)
    Gate to Source Voltage (Vgs)
    Drain to Source Breakdown Voltage
    Input Capacitance
    Drain to Source Resistance
    Rds On Max
    Height
    Length
    Width
    RoHS Status
    Lead Free
    Surface Mount
    Transistor Element Material
    Series
    JESD-609 Code
    Number of Terminations
    ECCN Code
    Terminal Finish
    Additional Feature
    HTS Code
    Terminal Position
    Terminal Form
    Peak Reflow Temperature (Cel)
    Time@Peak Reflow Temperature-Max (s)
    JESD-30 Code
    Qualification Status
    Number of Elements
    Configuration
    Operating Mode
    Case Connection
    Transistor Application
    Drain Current-Max (Abs) (ID)
    Drain-source On Resistance-Max
    Pulsed Drain Current-Max (IDM)
    DS Breakdown Voltage-Min
    Avalanche Energy Rating (Eas)
    JEDEC-95 Code
    Max Power Dissipation
    View Compare
  • IRF9640S
    IRF9640S
    Surface Mount
    Surface Mount
    TO-263-3, D2Pak (2 Leads Tab), TO-263AB
    3
    D2PAK
    1.437803g
    -55°C~150°C TJ
    Tube
    2016
    Obsolete
    1 (Unlimited)
    150°C
    -55°C
    -200V
    MOSFET (Metal Oxide)
    -11A
    1
    3W Ta 125W Tc
    Single
    125W
    14 ns
    P-Channel
    500mOhm @ 6.6A, 10V
    4V @ 250μA
    1200pF @ 25V
    11A Tc
    44nC @ 10V
    43ns
    200V
    10V
    ±20V
    38 ns
    39 ns
    11A
    20V
    -200V
    1.2nF
    500mOhm
    500 mΩ
    4.83mm
    10.67mm
    9.65mm
    Non-RoHS Compliant
    Contains Lead
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • IRF9520NS
    -
    Surface Mount
    TO-263-3, D2Pak (2 Leads Tab), TO-263AB
    -
    -
    -
    -55°C~175°C TJ
    Tube
    1998
    Obsolete
    1 (Unlimited)
    -
    -
    -
    MOSFET (Metal Oxide)
    -
    -
    3.8W Ta 48W Tc
    -
    -
    -
    P-Channel
    480m Ω @ 4A, 10V
    4V @ 250μA
    350pF @ 25V
    6.8A Tc
    27nC @ 10V
    -
    100V
    10V
    ±20V
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    Non-RoHS Compliant
    -
    YES
    SILICON
    HEXFET®
    e0
    2
    EAR99
    Tin/Lead (Sn/Pb)
    AVALANCHE RATED, HIGH RELIABILITY
    8541.29.00.95
    SINGLE
    GULL WING
    225
    30
    R-PSSO-G2
    Not Qualified
    1
    SINGLE WITH BUILT-IN DIODE
    ENHANCEMENT MODE
    DRAIN
    SWITCHING
    6.8A
    0.48Ohm
    27A
    100V
    140 mJ
    -
    -
  • IRF9410
    -
    Surface Mount
    8-SOIC (0.154, 3.90mm Width)
    -
    -
    -
    -55°C~150°C TJ
    Tube
    1997
    Obsolete
    1 (Unlimited)
    -
    -
    -
    MOSFET (Metal Oxide)
    -
    -
    2.5W Ta
    -
    -
    -
    N-Channel
    30m Ω @ 7A, 10V
    1V @ 250μA
    550pF @ 25V
    7A Ta
    27nC @ 10V
    -
    30V
    4.5V 10V
    ±20V
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    Non-RoHS Compliant
    -
    YES
    SILICON
    HEXFET®
    -
    8
    EAR99
    NOT SPECIFIED
    HIGH RELIABILITY
    -
    DUAL
    GULL WING
    NOT SPECIFIED
    NOT SPECIFIED
    R-PDSO-G8
    Not Qualified
    1
    SINGLE WITH BUILT-IN DIODE
    ENHANCEMENT MODE
    -
    SWITCHING
    7A
    0.03Ohm
    37A
    30V
    70 mJ
    MS-012AA
    -
  • IRF9530L
    Through Hole
    Through Hole
    TO-262-3 Long Leads, I2Pak, TO-262AA
    -
    -
    -
    -55°C~175°C TJ
    Tube
    2016
    Active
    1 (Unlimited)
    -
    -
    -
    MOSFET (Metal Oxide)
    -
    -
    -
    -
    -
    -
    P-Channel
    300m Ω @ 7.2A, 10V
    4V @ 250μA
    860pF @ 25V
    12A Tc
    38nC @ 10V
    -
    100V
    10V
    ±20V
    -
    -
    12A
    -
    -
    -
    -
    -
    -
    -
    -
    Non-RoHS Compliant
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    3.7W
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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