IRF9620STRLPBF

Vishay Siliconix IRF9620STRLPBF

Part Number:
IRF9620STRLPBF
Manufacturer:
Vishay Siliconix
Ventron No:
2484389-IRF9620STRLPBF
Description:
MOSFET P-CH 200V 3.5A D2PAK
ECAD Model:
Datasheet:
IRF9620STRLPBF

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Specifications
Vishay Siliconix IRF9620STRLPBF technical specifications, attributes, parameters and parts with similar specifications to Vishay Siliconix IRF9620STRLPBF.
  • Factory Lead Time
    8 Weeks
  • Mount
    Surface Mount
  • Mounting Type
    Surface Mount
  • Package / Case
    TO-263-3, D2Pak (2 Leads Tab), TO-263AB
  • Number of Pins
    3
  • Supplier Device Package
    D2PAK
  • Weight
    1.437803g
  • Operating Temperature
    -55°C~150°C TJ
  • Packaging
    Tape & Reel (TR)
  • Published
    2016
  • Part Status
    Active
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Resistance
    1.5Ohm
  • Max Operating Temperature
    150°C
  • Min Operating Temperature
    -55°C
  • Technology
    MOSFET (Metal Oxide)
  • Number of Channels
    1
  • Power Dissipation-Max
    3W Ta 40W Tc
  • Element Configuration
    Single
  • Turn On Delay Time
    15 ns
  • FET Type
    P-Channel
  • Rds On (Max) @ Id, Vgs
    1.5Ohm @ 1.5A, 10V
  • Vgs(th) (Max) @ Id
    4V @ 250μA
  • Input Capacitance (Ciss) (Max) @ Vds
    350pF @ 25V
  • Current - Continuous Drain (Id) @ 25°C
    3.5A Tc
  • Gate Charge (Qg) (Max) @ Vgs
    22nC @ 10V
  • Rise Time
    25ns
  • Drain to Source Voltage (Vdss)
    200V
  • Drive Voltage (Max Rds On,Min Rds On)
    10V
  • Vgs (Max)
    ±20V
  • Fall Time (Typ)
    15 ns
  • Turn-Off Delay Time
    20 ns
  • Continuous Drain Current (ID)
    -3.5A
  • Gate to Source Voltage (Vgs)
    20V
  • Drain to Source Breakdown Voltage
    -200V
  • Input Capacitance
    350pF
  • Drain to Source Resistance
    1.5Ohm
  • Rds On Max
    1.5 Ω
  • Height
    4.83mm
  • Length
    10.67mm
  • Width
    9.65mm
  • Radiation Hardening
    No
  • RoHS Status
    ROHS3 Compliant
  • Lead Free
    Lead Free
Description
IRF9620STRLPBF Overview
The maximum input capacitance of this device is 350pF @ 25V, because the input capacitance of an op amp is defined as the difference between the input terminals with one input grounded.Continuous drain current (ID) is the maximum continuous current (ID) the device can conduct, and it is -3.5A.When VGS=-200V, and ID flows to VDS at -200VVDS, the drain-source breakdown voltage is -200V in this device.Before drain current conduction can begin, the device's turn-off delay time must be charged up to full capacitance. This value is 20 ns.MOSFETs exhibit Drain-to-Source Resistance when a specific gate-to-source voltage (VGS) is applied to bias them into the on state, and this device's resistance is 1.5Ohm.During device turn-on, the input capacitance must be charged for a period of time before drain current conduction can begin, so its delay time is 15 ns seconds.Single MOSFETs transistor is the voltage across the gate-source terminal of a transistor that determines the gate-source voltage, VGS.The drain-to-source voltage (Vdss) of this transistor needs to be at 200V in order to operate.Using drive voltage (10V), this device helps reduce its power consumption.

IRF9620STRLPBF Features
a continuous drain current (ID) of -3.5A
a drain-to-source breakdown voltage of -200V voltage
the turn-off delay time is 20 ns
single MOSFETs transistor is 1.5Ohm
a 200V drain to source voltage (Vdss)


IRF9620STRLPBF Applications
There are a lot of Vishay Siliconix
IRF9620STRLPBF applications of single MOSFETs transistors.


Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
IRF9620STRLPBF More Descriptions
Single P-Channel 200 V 1.5 Ohms Surface Mount Power Mosfet - D2PAK-3
Trans MOSFET P-CH 200V 3.5A 3-Pin(2 Tab) D2PAK T/R
MOSFET; Transistor Type:MOSFET; Transistor Polarity:P Channel; Drain Source Voltage, Vds:-200V; Continuous Drain Current, Id:-3.5A; On Resistance, Rds(on):1.5ohm; Rds(on) Test Voltage, Vgs:-10V; Package/Case:SMD-220 ;RoHS Compliant: Yes
Product Comparison
The three parts on the right have similar specifications to IRF9620STRLPBF.
  • Image
    Part Number
    Manufacturer
    Factory Lead Time
    Mount
    Mounting Type
    Package / Case
    Number of Pins
    Supplier Device Package
    Weight
    Operating Temperature
    Packaging
    Published
    Part Status
    Moisture Sensitivity Level (MSL)
    Resistance
    Max Operating Temperature
    Min Operating Temperature
    Technology
    Number of Channels
    Power Dissipation-Max
    Element Configuration
    Turn On Delay Time
    FET Type
    Rds On (Max) @ Id, Vgs
    Vgs(th) (Max) @ Id
    Input Capacitance (Ciss) (Max) @ Vds
    Current - Continuous Drain (Id) @ 25°C
    Gate Charge (Qg) (Max) @ Vgs
    Rise Time
    Drain to Source Voltage (Vdss)
    Drive Voltage (Max Rds On,Min Rds On)
    Vgs (Max)
    Fall Time (Typ)
    Turn-Off Delay Time
    Continuous Drain Current (ID)
    Gate to Source Voltage (Vgs)
    Drain to Source Breakdown Voltage
    Input Capacitance
    Drain to Source Resistance
    Rds On Max
    Height
    Length
    Width
    Radiation Hardening
    RoHS Status
    Lead Free
    Surface Mount
    Transistor Element Material
    Series
    Number of Terminations
    ECCN Code
    Terminal Finish
    Additional Feature
    Terminal Position
    Terminal Form
    Peak Reflow Temperature (Cel)
    Time@Peak Reflow Temperature-Max (s)
    JESD-30 Code
    Qualification Status
    Number of Elements
    Configuration
    Operating Mode
    Transistor Application
    JEDEC-95 Code
    Drain Current-Max (Abs) (ID)
    Drain-source On Resistance-Max
    Pulsed Drain Current-Max (IDM)
    DS Breakdown Voltage-Min
    Avalanche Energy Rating (Eas)
    Max Power Dissipation
    JESD-609 Code
    Subcategory
    Power Dissipation
    Case Connection
    View Compare
  • IRF9620STRLPBF
    IRF9620STRLPBF
    8 Weeks
    Surface Mount
    Surface Mount
    TO-263-3, D2Pak (2 Leads Tab), TO-263AB
    3
    D2PAK
    1.437803g
    -55°C~150°C TJ
    Tape & Reel (TR)
    2016
    Active
    1 (Unlimited)
    1.5Ohm
    150°C
    -55°C
    MOSFET (Metal Oxide)
    1
    3W Ta 40W Tc
    Single
    15 ns
    P-Channel
    1.5Ohm @ 1.5A, 10V
    4V @ 250μA
    350pF @ 25V
    3.5A Tc
    22nC @ 10V
    25ns
    200V
    10V
    ±20V
    15 ns
    20 ns
    -3.5A
    20V
    -200V
    350pF
    1.5Ohm
    1.5 Ω
    4.83mm
    10.67mm
    9.65mm
    No
    ROHS3 Compliant
    Lead Free
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • IRF9410
    -
    -
    Surface Mount
    8-SOIC (0.154, 3.90mm Width)
    -
    -
    -
    -55°C~150°C TJ
    Tube
    1997
    Obsolete
    1 (Unlimited)
    -
    -
    -
    MOSFET (Metal Oxide)
    -
    2.5W Ta
    -
    -
    N-Channel
    30m Ω @ 7A, 10V
    1V @ 250μA
    550pF @ 25V
    7A Ta
    27nC @ 10V
    -
    30V
    4.5V 10V
    ±20V
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    Non-RoHS Compliant
    -
    YES
    SILICON
    HEXFET®
    8
    EAR99
    NOT SPECIFIED
    HIGH RELIABILITY
    DUAL
    GULL WING
    NOT SPECIFIED
    NOT SPECIFIED
    R-PDSO-G8
    Not Qualified
    1
    SINGLE WITH BUILT-IN DIODE
    ENHANCEMENT MODE
    SWITCHING
    MS-012AA
    7A
    0.03Ohm
    37A
    30V
    70 mJ
    -
    -
    -
    -
    -
  • IRF9540L
    -
    Through Hole
    Through Hole
    TO-262-3 Long Leads, I2Pak, TO-262AA
    -
    I2PAK
    -
    -55°C~175°C TJ
    Tube
    2016
    Active
    1 (Unlimited)
    -
    -
    -
    MOSFET (Metal Oxide)
    -
    -
    -
    -
    P-Channel
    200mOhm @ 11A, 10V
    4V @ 250μA
    1400pF @ 25V
    19A Tc
    61nC @ 10V
    -
    100V
    10V
    ±20V
    -
    -
    19A
    -
    -
    1.4nF
    -
    200 mΩ
    -
    -
    -
    -
    Non-RoHS Compliant
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    3.7W
    -
    -
    -
    -
  • IRF9383MTRPBF
    12 Weeks
    Surface Mount
    Surface Mount
    DirectFET™ Isometric MX
    7
    -
    -
    -40°C~150°C TJ
    Tape & Reel (TR)
    2011
    Active
    1 (Unlimited)
    -
    -
    -
    MOSFET (Metal Oxide)
    -
    2.1W Ta 113W Tc
    -
    29 ns
    P-Channel
    2.9m Ω @ 22A, 10V
    2.4V @ 150μA
    7305pF @ 15V
    22A Ta 160A Tc
    130nC @ 10V
    160ns
    30V
    4.5V 10V
    ±20V
    110 ns
    115 ns
    22A
    20V
    -30V
    -
    -
    -
    -
    -
    -
    No
    ROHS3 Compliant
    Lead Free
    -
    SILICON
    HEXFET®
    3
    EAR99
    Matte Tin (Sn)
    -
    BOTTOM
    -
    -
    -
    R-XBCC-N3
    -
    1
    SINGLE WITH BUILT-IN DIODE
    ENHANCEMENT MODE
    SWITCHING
    -
    -
    0.0029Ohm
    -
    -
    -
    -
    e3
    Other Transistors
    2.1W
    DRAIN
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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