Vishay Siliconix IRF9620STRLPBF
- Part Number:
- IRF9620STRLPBF
- Manufacturer:
- Vishay Siliconix
- Ventron No:
- 2484389-IRF9620STRLPBF
- Description:
- MOSFET P-CH 200V 3.5A D2PAK
- Datasheet:
- IRF9620STRLPBF
Vishay Siliconix IRF9620STRLPBF technical specifications, attributes, parameters and parts with similar specifications to Vishay Siliconix IRF9620STRLPBF.
- Factory Lead Time8 Weeks
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / CaseTO-263-3, D2Pak (2 Leads Tab), TO-263AB
- Number of Pins3
- Supplier Device PackageD2PAK
- Weight1.437803g
- Operating Temperature-55°C~150°C TJ
- PackagingTape & Reel (TR)
- Published2016
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Resistance1.5Ohm
- Max Operating Temperature150°C
- Min Operating Temperature-55°C
- TechnologyMOSFET (Metal Oxide)
- Number of Channels1
- Power Dissipation-Max3W Ta 40W Tc
- Element ConfigurationSingle
- Turn On Delay Time15 ns
- FET TypeP-Channel
- Rds On (Max) @ Id, Vgs1.5Ohm @ 1.5A, 10V
- Vgs(th) (Max) @ Id4V @ 250μA
- Input Capacitance (Ciss) (Max) @ Vds350pF @ 25V
- Current - Continuous Drain (Id) @ 25°C3.5A Tc
- Gate Charge (Qg) (Max) @ Vgs22nC @ 10V
- Rise Time25ns
- Drain to Source Voltage (Vdss)200V
- Drive Voltage (Max Rds On,Min Rds On)10V
- Vgs (Max)±20V
- Fall Time (Typ)15 ns
- Turn-Off Delay Time20 ns
- Continuous Drain Current (ID)-3.5A
- Gate to Source Voltage (Vgs)20V
- Drain to Source Breakdown Voltage-200V
- Input Capacitance350pF
- Drain to Source Resistance1.5Ohm
- Rds On Max1.5 Ω
- Height4.83mm
- Length10.67mm
- Width9.65mm
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
IRF9620STRLPBF Overview
The maximum input capacitance of this device is 350pF @ 25V, because the input capacitance of an op amp is defined as the difference between the input terminals with one input grounded.Continuous drain current (ID) is the maximum continuous current (ID) the device can conduct, and it is -3.5A.When VGS=-200V, and ID flows to VDS at -200VVDS, the drain-source breakdown voltage is -200V in this device.Before drain current conduction can begin, the device's turn-off delay time must be charged up to full capacitance. This value is 20 ns.MOSFETs exhibit Drain-to-Source Resistance when a specific gate-to-source voltage (VGS) is applied to bias them into the on state, and this device's resistance is 1.5Ohm.During device turn-on, the input capacitance must be charged for a period of time before drain current conduction can begin, so its delay time is 15 ns seconds.Single MOSFETs transistor is the voltage across the gate-source terminal of a transistor that determines the gate-source voltage, VGS.The drain-to-source voltage (Vdss) of this transistor needs to be at 200V in order to operate.Using drive voltage (10V), this device helps reduce its power consumption.
IRF9620STRLPBF Features
a continuous drain current (ID) of -3.5A
a drain-to-source breakdown voltage of -200V voltage
the turn-off delay time is 20 ns
single MOSFETs transistor is 1.5Ohm
a 200V drain to source voltage (Vdss)
IRF9620STRLPBF Applications
There are a lot of Vishay Siliconix
IRF9620STRLPBF applications of single MOSFETs transistors.
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
The maximum input capacitance of this device is 350pF @ 25V, because the input capacitance of an op amp is defined as the difference between the input terminals with one input grounded.Continuous drain current (ID) is the maximum continuous current (ID) the device can conduct, and it is -3.5A.When VGS=-200V, and ID flows to VDS at -200VVDS, the drain-source breakdown voltage is -200V in this device.Before drain current conduction can begin, the device's turn-off delay time must be charged up to full capacitance. This value is 20 ns.MOSFETs exhibit Drain-to-Source Resistance when a specific gate-to-source voltage (VGS) is applied to bias them into the on state, and this device's resistance is 1.5Ohm.During device turn-on, the input capacitance must be charged for a period of time before drain current conduction can begin, so its delay time is 15 ns seconds.Single MOSFETs transistor is the voltage across the gate-source terminal of a transistor that determines the gate-source voltage, VGS.The drain-to-source voltage (Vdss) of this transistor needs to be at 200V in order to operate.Using drive voltage (10V), this device helps reduce its power consumption.
IRF9620STRLPBF Features
a continuous drain current (ID) of -3.5A
a drain-to-source breakdown voltage of -200V voltage
the turn-off delay time is 20 ns
single MOSFETs transistor is 1.5Ohm
a 200V drain to source voltage (Vdss)
IRF9620STRLPBF Applications
There are a lot of Vishay Siliconix
IRF9620STRLPBF applications of single MOSFETs transistors.
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
IRF9620STRLPBF More Descriptions
Single P-Channel 200 V 1.5 Ohms Surface Mount Power Mosfet - D2PAK-3
Trans MOSFET P-CH 200V 3.5A 3-Pin(2 Tab) D2PAK T/R
MOSFET; Transistor Type:MOSFET; Transistor Polarity:P Channel; Drain Source Voltage, Vds:-200V; Continuous Drain Current, Id:-3.5A; On Resistance, Rds(on):1.5ohm; Rds(on) Test Voltage, Vgs:-10V; Package/Case:SMD-220 ;RoHS Compliant: Yes
Trans MOSFET P-CH 200V 3.5A 3-Pin(2 Tab) D2PAK T/R
MOSFET; Transistor Type:MOSFET; Transistor Polarity:P Channel; Drain Source Voltage, Vds:-200V; Continuous Drain Current, Id:-3.5A; On Resistance, Rds(on):1.5ohm; Rds(on) Test Voltage, Vgs:-10V; Package/Case:SMD-220 ;RoHS Compliant: Yes
The three parts on the right have similar specifications to IRF9620STRLPBF.
-
ImagePart NumberManufacturerFactory Lead TimeMountMounting TypePackage / CaseNumber of PinsSupplier Device PackageWeightOperating TemperaturePackagingPublishedPart StatusMoisture Sensitivity Level (MSL)ResistanceMax Operating TemperatureMin Operating TemperatureTechnologyNumber of ChannelsPower Dissipation-MaxElement ConfigurationTurn On Delay TimeFET TypeRds On (Max) @ Id, VgsVgs(th) (Max) @ IdInput Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25°CGate Charge (Qg) (Max) @ VgsRise TimeDrain to Source Voltage (Vdss)Drive Voltage (Max Rds On,Min Rds On)Vgs (Max)Fall Time (Typ)Turn-Off Delay TimeContinuous Drain Current (ID)Gate to Source Voltage (Vgs)Drain to Source Breakdown VoltageInput CapacitanceDrain to Source ResistanceRds On MaxHeightLengthWidthRadiation HardeningRoHS StatusLead FreeSurface MountTransistor Element MaterialSeriesNumber of TerminationsECCN CodeTerminal FinishAdditional FeatureTerminal PositionTerminal FormPeak Reflow Temperature (Cel)Time@Peak Reflow Temperature-Max (s)JESD-30 CodeQualification StatusNumber of ElementsConfigurationOperating ModeTransistor ApplicationJEDEC-95 CodeDrain Current-Max (Abs) (ID)Drain-source On Resistance-MaxPulsed Drain Current-Max (IDM)DS Breakdown Voltage-MinAvalanche Energy Rating (Eas)Max Power DissipationJESD-609 CodeSubcategoryPower DissipationCase ConnectionView Compare
-
IRF9620STRLPBF8 WeeksSurface MountSurface MountTO-263-3, D2Pak (2 Leads Tab), TO-263AB3D2PAK1.437803g-55°C~150°C TJTape & Reel (TR)2016Active1 (Unlimited)1.5Ohm150°C-55°CMOSFET (Metal Oxide)13W Ta 40W TcSingle15 nsP-Channel1.5Ohm @ 1.5A, 10V4V @ 250μA350pF @ 25V3.5A Tc22nC @ 10V25ns200V10V±20V15 ns20 ns-3.5A20V-200V350pF1.5Ohm1.5 Ω4.83mm10.67mm9.65mmNoROHS3 CompliantLead Free-----------------------------
-
--Surface Mount8-SOIC (0.154, 3.90mm Width)----55°C~150°C TJTube1997Obsolete1 (Unlimited)---MOSFET (Metal Oxide)-2.5W Ta--N-Channel30m Ω @ 7A, 10V1V @ 250μA550pF @ 25V7A Ta27nC @ 10V-30V4.5V 10V±20V------------Non-RoHS Compliant-YESSILICONHEXFET®8EAR99NOT SPECIFIEDHIGH RELIABILITYDUALGULL WINGNOT SPECIFIEDNOT SPECIFIEDR-PDSO-G8Not Qualified1SINGLE WITH BUILT-IN DIODEENHANCEMENT MODESWITCHINGMS-012AA7A0.03Ohm37A30V70 mJ-----
-
-Through HoleThrough HoleTO-262-3 Long Leads, I2Pak, TO-262AA-I2PAK--55°C~175°C TJTube2016Active1 (Unlimited)---MOSFET (Metal Oxide)----P-Channel200mOhm @ 11A, 10V4V @ 250μA1400pF @ 25V19A Tc61nC @ 10V-100V10V±20V--19A--1.4nF-200 mΩ----Non-RoHS Compliant------------------------3.7W----
-
12 WeeksSurface MountSurface MountDirectFET™ Isometric MX7---40°C~150°C TJTape & Reel (TR)2011Active1 (Unlimited)---MOSFET (Metal Oxide)-2.1W Ta 113W Tc-29 nsP-Channel2.9m Ω @ 22A, 10V2.4V @ 150μA7305pF @ 15V22A Ta 160A Tc130nC @ 10V160ns30V4.5V 10V±20V110 ns115 ns22A20V-30V------NoROHS3 CompliantLead Free-SILICONHEXFET®3EAR99Matte Tin (Sn)-BOTTOM---R-XBCC-N3-1SINGLE WITH BUILT-IN DIODEENHANCEMENT MODESWITCHING--0.0029Ohm----e3Other Transistors2.1WDRAIN
Popular Search Part Number
Related Keywords
Search Tags
Latest News
-
20 February 2024
LM358DR2G Operational Amplifier Symbol, Features, Applications and More
Ⅰ. Introduction to LM358DR2GⅡ. Technical parameters of LM358DR2GⅢ. Features of LM358DR2GⅣ. Symbol, footprint and pin configuration of LM358DR2GⅤ. Where is LM358DR2G used?Ⅵ. Circuit description of LM358DR2GⅦ. The difference... -
20 February 2024
MB6S Rectifier Bridge Specifications, Working Principle and Features
Ⅰ. Overview of MB6SⅡ. Specifications of MB6SⅢ. Working principle of MB6SⅣ. Circuit schematic diagram of MB6SⅤ. What are the features of MB6S?Ⅵ. Absolute maximum ratings of MB6SⅦ. How... -
21 February 2024
EPCS16SI8N Manufacturer, Market Trend, Application Fields and More
Ⅰ. Overview of EPCS16SI8NⅡ. Manufacturer of EPCS16SI8NⅢ. Specifications of EPCS16SI8NⅣ. Dimensions and package of EPCS16SI8NⅤ. Functional description of EPCS16SI8NⅥ. Application fields of EPCS16SI8NⅦ. Market trend of EPCS16SI8NⅧ. How... -
21 February 2024
What is the ADS1118IDGSR and How Does it Work?
Ⅰ. ADS1118IDGSR descriptionⅡ. Specifications of ADS1118IDGSRⅢ. Absolute maximum ratings of ADS1118IDGSRⅣ. How does ADS1118IDGSR work?Ⅴ. Package of ADS1118IDGSRⅥ. What are the characteristics of ADS1118IDGSR?Ⅶ. Typical application of ADS1118IDGSRⅧ....
Help you to save your cost and time.
Reliable package for your goods.
Fast Reliable Delivery to save time.
Quality premium after-sale service.