Vishay Siliconix IRF9610PBF

Name: IRF9610PBF
Brand: Vishay Siliconix
SKU: 2479858-IRF9610PBF
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: IRF9610PBF

Manufacturer:: Vishay Siliconix

Ventron No:: 2479858-IRF9610PBF

Description:: MOSFET P-CH 200V 1.8A TO-220AB

ECAD Model:

Datasheet:: IRF9610PBF

Specifications

Vishay Siliconix IRF9610PBF technical specifications, attributes, parameters and parts with similar specifications to Vishay Siliconix IRF9610PBF.

Factory Lead Time
8 Weeks
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-220-3
Number of Pins
3
Supplier Device Package
TO-220AB
Weight
6.000006g
Operating Temperature
-55°C~150°C TJ
Packaging
Tube
Published
2008
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Resistance
3Ohm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Voltage - Rated DC
-200V
Technology
MOSFET (Metal Oxide)
Current Rating
-1.8A
Number of Elements
1
Number of Channels
1
Voltage
200V
Power Dissipation-Max
20W Tc
Element Configuration
Single
Power Dissipation
20W
Turn On Delay Time
8 ns
FET Type
P-Channel
Rds On (Max) @ Id, Vgs
3Ohm @ 900mA, 10V
Vgs(th) (Max) @ Id
4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds
170pF @ 25V
Current - Continuous Drain (Id) @ 25°C
1.8A Tc
Gate Charge (Qg) (Max) @ Vgs
11nC @ 10V
Rise Time
15ns
Drain to Source Voltage (Vdss)
200V
Drive Voltage (Max Rds On,Min Rds On)
10V
Vgs (Max)
±20V
Fall Time (Typ)
8 ns
Turn-Off Delay Time
10 ns
Continuous Drain Current (ID)
-1.8A
Threshold Voltage
-4V
Gate to Source Voltage (Vgs)
20V
Drain to Source Breakdown Voltage
-200V
Input Capacitance
170pF
Recovery Time
360 ns
Drain to Source Resistance
3Ohm
Rds On Max
3 Ω
Nominal Vgs
-4 V
Height
9.01mm
Length
10.41mm
Width
4.7mm
REACH SVHC
Unknown
Radiation Hardening
No
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free

Description

IRF9610PBF Overview
The maximum input capacitance of this device is 170pF @ 25V, because the input capacitance of an op amp is defined as the difference between the input terminals with one input grounded.Continuous drain current (ID) is the maximum continuous current (ID) the device can conduct, and it is -1.8A.When VGS=-200V, and ID flows to VDS at -200VVDS, the drain-source breakdown voltage is -200V in this device.Before drain current conduction can begin, the device's turn-off delay time must be charged up to full capacitance. This value is 10 ns.MOSFETs exhibit Drain-to-Source Resistance when a specific gate-to-source voltage (VGS) is applied to bias them into the on state, and this device's resistance is 3Ohm.During device turn-on, the input capacitance must be charged for a period of time before drain current conduction can begin, so its delay time is 8 ns seconds.Single MOSFETs transistor is the voltage across the gate-source terminal of a transistor that determines the gate-source voltage, VGS.This transistor's threshold voltage is -4V volts, which indicates that a transistor is ready to perform any of its operations at that voltage.The drain-to-source voltage (Vdss) of this transistor needs to be at 200V in order to operate.Using drive voltage (10V), this device helps reduce its power consumption.

IRF9610PBF Features
a continuous drain current (ID) of -1.8A
a drain-to-source breakdown voltage of -200V voltage
the turn-off delay time is 10 ns
single MOSFETs transistor is 3Ohm
a threshold voltage of -4V
a 200V drain to source voltage (Vdss)

IRF9610PBF Applications
There are a lot of Vishay Siliconix
IRF9610PBF applications of single MOSFETs transistors.

Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,

IRF9610PBF More Descriptions

Single P-Channel 200 V 3 Ohms Flange Mount Power Mosfet - TO-220-3
Trans MOSFET P-CH 200V 1.8A 3-Pin (3 Tab) TO-220AB
MOSFET P-CH 200V 1.8A TO-220AB | Siliconix / Vishay IRF9610PBF
Power Field-Effect Transistor, 1.8A I(D), 200V, 3ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
MOSFET, P, TO-220; Transistor Polarity:P Channel; Continuous Drain Current Id:1.75A; Drain Source Voltage Vds:200V; On Resistance Rds(on):3ohm; Rds(on) Test Voltage Vgs:-10V; Threshold Voltage Vgs Typ:-4V; Operating Temperature Range:-55°C to 150°C; Transistor Case Style:TO-220AB; No. of Pins:3; Current Id Max:-1.8A; Current Temperature:25°C; Full Power Rating Temperature:25°C; Lead Spacing:2.54mm; No. of Transistors:1; Package / Case:TO-220AB; Pin Configuration:a; Pin Format:1 g; 2 d/tab; 3 s; Power Dissipation Pd:20W; Power Dissipation Pd:20W; Pulse Current Idm:7A; Termination Type:Through Hole; Voltage Vds Typ:-200V; Voltage Vgs Max:20V; Voltage Vgs Rds on Measurement:-10V

Product Comparison

The three parts on the right have similar specifications to IRF9610PBF.

Image

Part Number

Manufacturer

Factory Lead Time

Mount

Mounting Type

Package / Case

Number of Pins

Supplier Device Package

Weight

Operating Temperature

Packaging

Published

Part Status

Moisture Sensitivity Level (MSL)

Resistance

Max Operating Temperature

Min Operating Temperature

Voltage - Rated DC

Technology

Current Rating

Number of Elements

Number of Channels

Voltage

Power Dissipation-Max

Element Configuration

Power Dissipation

Turn On Delay Time

FET Type

Rds On (Max) @ Id, Vgs

Vgs(th) (Max) @ Id

Input Capacitance (Ciss) (Max) @ Vds

Current - Continuous Drain (Id) @ 25°C

Gate Charge (Qg) (Max) @ Vgs

Rise Time

Drain to Source Voltage (Vdss)

Drive Voltage (Max Rds On,Min Rds On)

Vgs (Max)

Fall Time (Typ)

Turn-Off Delay Time

Continuous Drain Current (ID)

Threshold Voltage

Gate to Source Voltage (Vgs)

Drain to Source Breakdown Voltage

Input Capacitance

Recovery Time

Drain to Source Resistance

Rds On Max

Nominal Vgs

Height

Length

Width

REACH SVHC

Radiation Hardening

RoHS Status

Lead Free

Max Power Dissipation

Transistor Element Material

Series

JESD-609 Code

Number of Terminations

ECCN Code

Terminal Finish

Subcategory

Terminal Position

JESD-30 Code

Configuration

Operating Mode

Case Connection

Transistor Application

Drain-source On Resistance-Max

View Compare
IRF9610PBF

Vishay Siliconix

8 Weeks

Through Hole

Through Hole

TO-220-3

3

TO-220AB

6.000006g

-55°C~150°C TJ

Tube

2008

Active

1 (Unlimited)

3Ohm

150°C

-55°C

-200V

MOSFET (Metal Oxide)

-1.8A

1

1

200V

20W Tc

Single

20W

8 ns

P-Channel

3Ohm @ 900mA, 10V

4V @ 250μA

170pF @ 25V

1.8A Tc

11nC @ 10V

15ns

200V

10V

±20V

8 ns

10 ns

-1.8A

-4V

20V

-200V

170pF

360 ns

3Ohm

3 Ω

-4 V

9.01mm

10.41mm

4.7mm

Unknown

No

ROHS3 Compliant

Lead Free

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-
IRF9530L

Vishay Siliconix

-

Through Hole

Through Hole

TO-262-3 Long Leads, I2Pak, TO-262AA

-

-

-

-55°C~175°C TJ

Tube

2016

Active

1 (Unlimited)

-

-

-

-

MOSFET (Metal Oxide)

-

-

-

-

-

-

-

-

P-Channel

300m Ω @ 7.2A, 10V

4V @ 250μA

860pF @ 25V

12A Tc

38nC @ 10V

-

100V

10V

±20V

-

-

12A

-

-

-

-

-

-

-

-

-

-

-

-

-

Non-RoHS Compliant

-

3.7W

-

-

-

-

-

-

-

-

-

-

-

-

-

-

IRF9610PBF vs IRF9530L
IRF9383MTRPBF

Infineon Technologies

12 Weeks

Surface Mount

Surface Mount

DirectFET™ Isometric MX

7

-

-

-40°C~150°C TJ

Tape & Reel (TR)

2011

Active

1 (Unlimited)

-

-

-

-

MOSFET (Metal Oxide)

-

1

-

-

2.1W Ta 113W Tc

-

2.1W

29 ns

P-Channel

2.9m Ω @ 22A, 10V

2.4V @ 150μA

7305pF @ 15V

22A Ta 160A Tc

130nC @ 10V

160ns

30V

4.5V 10V

±20V

110 ns

115 ns

22A

-

20V

-30V

-

-

-

-

-

-

-

-

-

No

ROHS3 Compliant

Lead Free

-

SILICON

HEXFET®

e3

3

EAR99

Matte Tin (Sn)

Other Transistors

BOTTOM

R-XBCC-N3

SINGLE WITH BUILT-IN DIODE

ENHANCEMENT MODE

DRAIN

SWITCHING

0.0029Ohm

IRF9610PBF vs IRF9383MTRPBF
IRF9510S

Vishay Siliconix

-

Surface Mount

Surface Mount

TO-263-3, D2Pak (2 Leads Tab), TO-263AB

-

D2PAK

1.437803g

-55°C~175°C TJ

Tube

2016

Obsolete

1 (Unlimited)

-

175°C

-55°C

-100V

MOSFET (Metal Oxide)

-4A

-

1

-

3.7W Ta 43W Tc

Single

43W

10 ns

P-Channel

1.2Ohm @ 2.4A, 10V

4V @ 250μA

200pF @ 25V

4A Tc

8.7nC @ 10V

27ns

100V

10V

±20V

17 ns

15 ns

4A

-

20V

-100V

200pF

-

1.2Ohm

1.2 Ω

-

4.83mm

10.41mm

9.65mm

-

-

Non-RoHS Compliant

Contains Lead

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

IRF9610PBF vs IRF9510S

Certification

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IRF9610PBF Specification

Part Number	Manufacturers	Description	Stock	Price
IRF9610PBF DISTI #V99:2348_07433935	Vishay Intertechnologies	Trans MOSFET P-CH 200V 1.8A 3-Pin(3 Tab) TO-220AB RoHS: Compliant	280	1 $1.7238 10 $1.3778 100 $1.0516 500 $0.9087 1000 $0.7798 2500 $0.7299
IRF9610PBF DISTI #V36:1790_07433935	Vishay Intertechnologies	Trans MOSFET P-CH 200V 1.8A 3-Pin(3 Tab) TO-220AB RoHS: Compliant	0	1000 $0.7349
IRF9610PBF DISTI #IRF9610PBF-ND	Vishay Siliconix	MOSFET P-CH 200V 1.8A TO-220AB RoHS: Compliant	456	1 $1.58 10 $1.415 50 $1.3426 100 $1.1029 500 $0.91112 2500 $0.67135 5000 $0.63778
IRF9610PBF DISTI #26645278	Vishay Intertechnologies	Trans MOSFET P-CH 200V 1.8A 3-Pin(3 Tab) TO-220AB RoHS: Compliant	456	38 $0.27
IRF9610PBF DISTI #25939814	Vishay Intertechnologies	Trans MOSFET P-CH 200V 1.8A 3-Pin(3 Tab) TO-220AB RoHS: Compliant	280	9 $1.7238
IRF9610PBF DISTI #IRF9610PBF	Vishay Intertechnologies	Trans MOSFET P-CH 200V 1.8A 3-Pin(3 Tab) TO-220AB RoHS: Not Compliant	815	1000 $0.78457 2000 $0.7613 3000 $0.73035 5000 $0.71014 10000 $0.69103
63J7433 DISTI #IRF9610PBF	Vishay Intertechnologies	MOSFET P-CHANNEL 200V (Alt: IRF9610PBF) RoHS: Compliant	950	1 $0.5839 10 $0.3979 25 $0.3429 50 $0.3159 100 $0.3049 500 $0.2999 1000 $0.2939
IRF9610PBF DISTI #63J7433	Vishay Intertechnologies	Trans MOSFET P-CH 200V 1.8A 3-Pin(3 Tab) TO-220AB RoHS: Not Compliant	0	1 $1.68 10 $1.4 25 $1.29 50 $1.19 100 $1.08 500 $0.944 1000 $0.782
IRF9610PBF DISTI #63J7433	Vishay Intertechnologies	P CHANNEL MOSFET, -200V, 1.8A, TO-220, Transistor	76	1 $1.7 10 $1.41 25 $1.31 50 $1.2 100 $1.09 500 $0.953 1000 $0.79
IRF9610PBF. DISTI #27AC6921	Vishay Intertechnologies	MOSFET P-CHANNEL 200V ROHS COMPLIANT: NO	285	1 $1.74 10 $1.44 25 $1.34 50 $1.2 100 $1.09 500 $0.953 1000 $0.79
IRF9610PBF DISTI #70459425	Vishay Siliconix	MOSFET P-CH 200V 1.8A TO-220AB RoHS: Compliant	0	1000 $1.592 2000 $1.27
IRF9610PBF DISTI #70078874	Vishay Intertechnologies	MOSFET, Power, P-Ch, VDSS -200V, RDS(ON) 3Ohms RoHS: Compliant	0	1000 $1.127
IRF9610PBF DISTI #	Vishay Intertechnologies	Single P-Channel 200 V 3 Ohms Flange Mount Power M RoHS: Compliant	357	25 $1.23 100 $0.855 250 $0.8 500 $0.755 1000 $0.715
IRF9610PBF DISTI #844-IRF9610PBF	Vishay Intertechnologies	MOSFET P-CH -200V HEXFET MOSFET RoHS: Compliant	1524	1 $1.67 10 $1.39 100 $1.07 500 $0.943 1000 $0.781 2500 $0.727 5000 $0.7 10000 $0.673
IRF9610 DISTI #844-IRF9610	Vishay Intertechnologies	MOSFET RECOMMENDED ALT 844-IRF9610PBF RoHS: Not Compliant	0
IRF9610PBF DISTI #5429462	Vishay Intertechnologies	MOSFET P-CHANNEL 200V 1.8A TO220AB, EA	633	1 $2 20 $0.6 40 $0.52
IRF9610PBF DISTI #5429462P	Vishay Intertechnologies	MOSFET P-CHANNEL 200V 1.8A TO220AB, TA	1221	20 $0.6 40 $0.52
IRF9610PBF DISTI #IRF9610PBF	Vishay Intertechnologies	Transistor: P-MOSFET, unipolar, -200V, -1A, 20	308	1 $0.52 5 $0.44 25 $0.41 100 $0.36 500 $0.32
IRF9610PBF DISTI #IRF9610PBF	Vishay Intertechnologies	P-Ch 200V 1,8A 20W 3R TO220AB RoHS: Compliant	1350	25 $0.36 100 $0.28 300 $0.24 500 $0.231
IRF9610PBF DISTI #	Vishay Intertechnologies	MOSFET P-CH -200V HEXFET MOSFET RoHS: Compliant	0
IRF9610PBF DISTI #9103562	Vishay Intertechnologies	MOSFET, P, TO-220	1293	1 $1.49 10 $1.14 100 $0.84 250 $0.787 500 $0.734
IRF9610PBF DISTI #XSFP00000007102	Vishay Siliconix	Ferrite Chip, 1 Function(s), 0.5A RoHS: Compliant	193	117 $1.22 193 $1.14
IRF9610PBF DISTI #9103562	Vishay Intertechnologies	MOSFET, P, TO-220 RoHS: Compliant	965	1 $2.36 10 $2.12 50 $2.01 100 $1.65 500 $1.37 2500 $1.01 5000 $0.957

IRF9610~~(10)~~
IRF961~~(11)~~
IRF96~~(39)~~
IRF9~~(69)~~
IRF~~(69)~~

Vishay Siliconix IRF9610PBF

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