Vishay Siliconix IRF9540PBF

Name: IRF9540PBF
Brand: Vishay Siliconix
SKU: 2479865-IRF9540PBF
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: IRF9540PBF

Manufacturer:: Vishay Siliconix

Ventron No:: 2479865-IRF9540PBF

Description:: MOSFET P-CH 100V 19A TO-220AB

ECAD Model:

Datasheet:: IRF9540PBF

Specifications

Vishay Siliconix IRF9540PBF technical specifications, attributes, parameters and parts with similar specifications to Vishay Siliconix IRF9540PBF.

Factory Lead Time
8 Weeks
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-220-3
Number of Pins
3
Supplier Device Package
TO-220AB
Weight
6.000006g
Operating Temperature
-55°C~175°C TJ
Packaging
Tube
Published
2014
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Resistance
200mOhm
Max Operating Temperature
175°C
Min Operating Temperature
-55°C
Voltage - Rated DC
-100V
Technology
MOSFET (Metal Oxide)
Current Rating
-19A
Number of Elements
1
Number of Channels
1
Power Dissipation-Max
150W Tc
Element Configuration
Single
Power Dissipation
150W
Turn On Delay Time
16 ns
FET Type
P-Channel
Rds On (Max) @ Id, Vgs
200mOhm @ 11A, 10V
Vgs(th) (Max) @ Id
4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds
1400pF @ 25V
Current - Continuous Drain (Id) @ 25°C
19A Tc
Gate Charge (Qg) (Max) @ Vgs
61nC @ 10V
Rise Time
73ns
Drain to Source Voltage (Vdss)
100V
Drive Voltage (Max Rds On,Min Rds On)
10V
Vgs (Max)
±20V
Fall Time (Typ)
57 ns
Turn-Off Delay Time
34 ns
Continuous Drain Current (ID)
-19A
Threshold Voltage
-4V
Gate to Source Voltage (Vgs)
20V
Drain to Source Breakdown Voltage
-100V
Input Capacitance
1.4nF
Recovery Time
260 ns
Max Junction Temperature (Tj)
175°C
Drain to Source Resistance
200mOhm
Rds On Max
200 mΩ
Nominal Vgs
-4 V
Height
19.89mm
Length
10.41mm
Width
4.7mm
REACH SVHC
Unknown
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free

Description

IRF9540PBF Overview
CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 1400pF @ 25V.In this device, the drain current (ID) is equal to the continuous current transistor can conduct.This device has -100V drain-to-source breakdown voltage, where VDS corresponds to the ID at which a specified value of ID flows and VGS equals -100V.As a result of its turn-off delay time, which is 34 ns, the device has taken time to charge its input capacitance before drain current conduction begins.In a MOSFET, Drain to Source Resistance is the resistance between the drain and the source when gate-to-source voltage (VGS) is applied to bias it into the on state; in this device, this resistance is 200mOhm.Input capacitance charge delays drain current conduction until the time it takes to charge input capacitance reaches 16 ns.Gate-source voltages (VGS) are voltages that fall across the gate-source terminal of FET transistors. VGS is sometimes 20VV.The threshold voltage is the point at which an electrical device activates any one of its operations, which for this transistor is -4V.The transistor must receive a 100V drain to source voltage (Vdss) in order to function.In addition to reducing power consumption, this device uses drive voltage (10V).

IRF9540PBF Features
a continuous drain current (ID) of -19A
a drain-to-source breakdown voltage of -100V voltage
the turn-off delay time is 34 ns
single MOSFETs transistor is 200mOhm
a threshold voltage of -4V
a 100V drain to source voltage (Vdss)

IRF9540PBF Applications
There are a lot of Vishay Siliconix
IRF9540PBF applications of single MOSFETs transistors.

DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
Lighting, Server, Telecom and UPS.

IRF9540PBF More Descriptions

SILICONIX THT MOSFET PFET -100V -19A 200mΩ 175°C TO-220 IRF9540-PBF
Transistor PNP IRF9540/IRF9540PBF INTERNATIONAL RECTIFIER RoHS Ampere=19 Volt=100 TO220Halfin
Single P-Channel 100 V 0.2 Ohms Flange Mount Power Mosfet - TO-220AB
100V 19A 150W 200m´Î@10V11A 4V@250Ã×A P Channel TO-220(TO-220-3) MOSFETs ROHS
Power Field-Effect Transistor, 19A I(D), 100V, 0.2ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
MOSFET, P, -100V, -19A, TO-220; Transistor Polarity:P Channel; Continuous Drain Current Id:19A; Drain Source Voltage Vds:100V; On Resistance Rds(on):200mohm; Rds(on) Test Voltage Vgs:-10V; Threshold Voltage Vgs Typ:-4V; Transistor Case Style:TO-220AB; No. of Pins:3; Current Id Max:-19A; Junction to Case Thermal Resistance A:1°C/W; Package / Case:TO-220AB; Power Dissipation Pd:150W; Power Dissipation Pd:150W; Pulse Current Idm:72A; Termination Type:Through Hole; Voltage Vds:100V; Voltage Vds Typ:-100V; Voltage Vgs Max:20V; Voltage Vgs Rds on Measurement:-10V

Product Comparison

The three parts on the right have similar specifications to IRF9540PBF.

Image

Part Number

Manufacturer

Factory Lead Time

Mount

Mounting Type

Package / Case

Number of Pins

Supplier Device Package

Weight

Operating Temperature

Packaging

Published

Part Status

Moisture Sensitivity Level (MSL)

Resistance

Max Operating Temperature

Min Operating Temperature

Voltage - Rated DC

Technology

Current Rating

Number of Elements

Number of Channels

Power Dissipation-Max

Element Configuration

Power Dissipation

Turn On Delay Time

FET Type

Rds On (Max) @ Id, Vgs

Vgs(th) (Max) @ Id

Input Capacitance (Ciss) (Max) @ Vds

Current - Continuous Drain (Id) @ 25°C

Gate Charge (Qg) (Max) @ Vgs

Rise Time

Drain to Source Voltage (Vdss)

Drive Voltage (Max Rds On,Min Rds On)

Vgs (Max)

Fall Time (Typ)

Turn-Off Delay Time

Continuous Drain Current (ID)

Threshold Voltage

Gate to Source Voltage (Vgs)

Drain to Source Breakdown Voltage

Input Capacitance

Recovery Time

Max Junction Temperature (Tj)

Drain to Source Resistance

Rds On Max

Nominal Vgs

Height

Length

Width

REACH SVHC

RoHS Status

Lead Free

Surface Mount

Transistor Element Material

Series

Number of Terminations

ECCN Code

Terminal Finish

Additional Feature

Terminal Position

Terminal Form

Peak Reflow Temperature (Cel)

Time@Peak Reflow Temperature-Max (s)

JESD-30 Code

Qualification Status

Configuration

Operating Mode

Transistor Application

JEDEC-95 Code

Drain Current-Max (Abs) (ID)

Drain-source On Resistance-Max

Pulsed Drain Current-Max (IDM)

DS Breakdown Voltage-Min

Avalanche Energy Rating (Eas)

Max Power Dissipation

View Compare
IRF9540PBF

Vishay Siliconix

8 Weeks

Through Hole

Through Hole

TO-220-3

3

TO-220AB

6.000006g

-55°C~175°C TJ

Tube

2014

Active

1 (Unlimited)

200mOhm

175°C

-55°C

-100V

MOSFET (Metal Oxide)

-19A

1

1

150W Tc

Single

150W

16 ns

P-Channel

200mOhm @ 11A, 10V

4V @ 250μA

1400pF @ 25V

19A Tc

61nC @ 10V

73ns

100V

10V

±20V

57 ns

34 ns

-19A

-4V

20V

-100V

1.4nF

260 ns

175°C

200mOhm

200 mΩ

-4 V

19.89mm

10.41mm

4.7mm

Unknown

ROHS3 Compliant

Lead Free

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-
IRF9410

Infineon Technologies

-

-

Surface Mount

8-SOIC (0.154, 3.90mm Width)

-

-

-

-55°C~150°C TJ

Tube

1997

Obsolete

1 (Unlimited)

-

-

-

-

MOSFET (Metal Oxide)

-

1

-

2.5W Ta

-

-

-

N-Channel

30m Ω @ 7A, 10V

1V @ 250μA

550pF @ 25V

7A Ta

27nC @ 10V

-

30V

4.5V 10V

±20V

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

Non-RoHS Compliant

-

YES

SILICON

HEXFET®

8

EAR99

NOT SPECIFIED

HIGH RELIABILITY

DUAL

GULL WING

NOT SPECIFIED

NOT SPECIFIED

R-PDSO-G8

Not Qualified

SINGLE WITH BUILT-IN DIODE

ENHANCEMENT MODE

SWITCHING

MS-012AA

7A

0.03Ohm

37A

30V

70 mJ

-

IRF9540PBF vs IRF9410
IRF9530L

Vishay Siliconix

-

Through Hole

Through Hole

TO-262-3 Long Leads, I2Pak, TO-262AA

-

-

-

-55°C~175°C TJ

Tube

2016

Active

1 (Unlimited)

-

-

-

-

MOSFET (Metal Oxide)

-

-

-

-

-

-

-

P-Channel

300m Ω @ 7.2A, 10V

4V @ 250μA

860pF @ 25V

12A Tc

38nC @ 10V

-

100V

10V

±20V

-

-

12A

-

-

-

-

-

-

-

-

-

-

-

-

-

Non-RoHS Compliant

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

3.7W

IRF9540PBF vs IRF9530L
IRF9510S

Vishay Siliconix

-

Surface Mount

Surface Mount

TO-263-3, D2Pak (2 Leads Tab), TO-263AB

-

D2PAK

1.437803g

-55°C~175°C TJ

Tube

2016

Obsolete

1 (Unlimited)

-

175°C

-55°C

-100V

MOSFET (Metal Oxide)

-4A

-

1

3.7W Ta 43W Tc

Single

43W

10 ns

P-Channel

1.2Ohm @ 2.4A, 10V

4V @ 250μA

200pF @ 25V

4A Tc

8.7nC @ 10V

27ns

100V

10V

±20V

17 ns

15 ns

4A

-

20V

-100V

200pF

-

-

1.2Ohm

1.2 Ω

-

4.83mm

10.41mm

9.65mm

-

Non-RoHS Compliant

Contains Lead

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

IRF9540PBF vs IRF9510S

Certification

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IRF9540PBF Specification

Part Number	Manufacturers	Description	Stock	Price
IRF9540PBF DISTI #	Vishay Intertechnologies	Trans MOSFET P-CH 100V 19A 3-Pin(3 Tab) TO-220AB RoHS: Compliant	1385	1 $1.2795 10 $1.114 100 $0.9064 500 $0.803 1000 $0.6623 2500 $0.6251 5000 $0.5989 10000 $0.5798
IRF9540PBF DISTI #	Vishay Intertechnologies	Trans MOSFET P-CH 100V 19A 3-Pin(3 Tab) TO-220AB RoHS: Compliant	1030	1 $1.2795 10 $1.114 100 $0.9064 500 $0.803 1000 $0.6623 2500 $0.6251 5000 $0.5989 10000 $0.5798
IRF9540PBF DISTI #	Vishay Siliconix	MOSFET P-CH 100V 19A TO-220AB RoHS: Compliant	4445	1 $1.86 50 $1.5004 100 $1.3504 500 $1.05028 1000 $0.87023
IRF9540PBF DISTI #	Vishay Intertechnologies	Trans MOSFET P-CH 100V 19A 3-Pin(3 Tab) TO-220AB RoHS: Compliant	5430	26 $0.84 150 $0.7536 750 $0.6576
IRF9540PBF DISTI #	Vishay Intertechnologies	Trans MOSFET P-CH 100V 19A 3-Pin(3 Tab) TO-220AB RoHS: Compliant	1385	11 $1.114 100 $0.9064 500 $0.803 1000 $0.6623
IRF9540PBF DISTI #	Vishay Intertechnologies	Trans MOSFET P-CH 100V 19A 3-Pin(3 Tab) TO-220AB RoHS: Compliant	1030	10 $1.114 100 $0.9064 500 $0.803 1000 $0.6623
63J7432 DISTI #	Vishay Intertechnologies	MOSFET P-CHANNEL 100V (Alt: IRF9540PBF) RoHS: Compliant	28289	1 $0.8849 10 $0.6349 25 $0.5149 50 $0.4549 100 $0.4479 500 $0.4409 1000 $0.4349
IRF9540PBF DISTI #	Vishay Intertechnologies	Trans MOSFET P-CH 100V 19A 3-Pin(3 Tab) TO-220AB ( RoHS: Compliant	0	1000 $0.60932 2000 $0.4687 3000 $0.37305 5000 $0.31516 10000 $0.29015 25000 $0.28122 50000 $0.27283
IRF9540PBF DISTI #	Vishay Intertechnologies	Trans MOSFET P-CH 100V 19A 3-Pin(3 Tab) TO-220AB - RoHS: Not Compliant	0	1 $0.8349 10 $0.8159 25 $0.7969 50 $0.7649 100 $0.7289 500 $0.7139 1000 $0.6969
IRF9540PBF DISTI #	Vishay Intertechnologies	Trans MOSFET P-CH 100V 19A 3-Pin(3 Tab) TO-220AB - RoHS: Not Compliant	0	1 $1.96 10 $1.78 25 $1.68 50 $1.58 100 $1.49 500 $1.4 1000 $1.34
IRF9540PBF DISTI #	Vishay Intertechnologies	P CHANNEL MOSFET, -100V, 19A TO-220, Transistor P	295	1 $1.63 10 $1.48 25 $1.4 50 $1.32 100 $1.24 500 $1.17 1000 $1.12 2500 $1.08
IRF9540PBF DISTI #	Vishay Intertechnologies	MOSFET, Power, P-Ch, VDSS -100V, RDS(ON) 0.2Oh RoHS: Compliant	433	1 $1.846 25 $1.789 100 $1.634 250 $1.512 500 $1.407
IRF9540PBF DISTI #	Vishay Siliconix	-100V Single P-Channel HEXFET RoHS: Compliant	0	1000 $4.027 2000 $3.21
IRF9540PBF DISTI #	Vishay Intertechnologies	Single P-Channel 100 V 0.2 Ohms Flange Mount Power RoHS: Compliant	16269	15 $0.875 150 $0.785 750 $0.685
IRF9540PBF DISTI #	Vishay Intertechnologies	MOSFET -100V Single P-Channel HEXFET RoHS: Compliant	3893	1 $1.63 10 $1.35 100 $1.03 500 $0.885 1000 $0.699 2500 $0.652 5000 $0.62 10000 $0.597
IRF9540PBF DISTI #	Vishay Siliconix	MOSFET Transistor, P-Channel, TO-220AB	49	1 $1.8 4 $1.35 12 $0.9
IRF9540PBF DISTI #	International Rectifier	MOSFET Transistor, P-Channel, TO-220AB	21	1 $1.8 4 $1.35 12 $0.9
IRF9540PBF DISTI #	Vishay Intertechnologies	MOSFET Transistor, P-Channel, TO-220AB	47	1 $2.25 12 $1.35 45 $1.125
IRF9540PBF DISTI #	International Rectifier	MOSFET Transistor, P-Channel, TO-220AB	6	1 $3.68 2 $2.76
IRF9540PBF DISTI #	Vishay Intertechnologies	MOSFET P-CHANNEL 100V 19A TO220AB, PK	345	5 $1.27 25 $0.98
IRF9540PBF DISTI #	Vishay Intertechnologies	MOSFET P-CHANNEL 100V 19A TO220AB, TU	1870	25 $0.98
IRF9540PBF DISTI #	Vishay Intertechnologies		115
IRF9540PBF DISTI #	Vishay Intertechnologies	Transistor: P-MOSFET, unipolar, -100V, -13A, 1	164	1 $0.77 5 $0.72 25 $0.66 100 $0.58 250 $0.52
IRF9540PBF DISTI #	Vishay Intertechnologies	P-Ch 100V 19A 150W 0,2R TO220AB RoHS: Compliant	4525	25 $0.5675 100 $0.4875 300 $0.4475 500 $0.431
IRF9540PBF DISTI #	Vishay Siliconix	RoHS: Compliant	368
IRF9540PBF DISTI #	Vishay Intertechnologies	MOSFET, P, -100V, -19A, TO-220 RoHS: Compliant	586	5 $1.14 25 $1 100 $0.796 250 $0.739 500 $0.682
IRF9540PBF DISTI #	Vishay Intertechnologies	MOSFETs RoHS: Compliant	1030	10 $1.114 100 $0.9064 500 $0.803 1000 $0.6623
IRF9540PBF DISTI #	Vishay Intertechnologies	Trans MOSFET P-CH 100V 19A 3-Pin(3 Tab) TO-220AB RoHS: Not Compliant	1385	10 $1.114 100 $0.9064 500 $0.803 1000 $0.6623
IRF9540PBF DISTI #	Vishay Intertechnologies	Trans MOSFET P-CH 100V 19A 3-Pin(3 Tab) TO-220AB RoHS: Compliant	5030	5 $1.36 25 $0.994 50 $0.886 100 $0.745 500 $0.669 1000 $0.619
IRF9540PBF DISTI #	VI1	RoHS: Compliant	20476	1000 $0.92 20476 $0.8433
IRF9540PBF DISTI #	Vishay Intertechnologies	TO-220AB RoHS: Compliant	4644	1300 $0.54 4644 $0.5
IRF9540PBF DISTI #	Vishay Siliconix	RoHS: Compliant	38602	150 $1.75 38602 $1.59
IRF9540PBF DISTI #	International Rectifier	RoHS (ship within 1day)	8	1 $2.36 10 $1.79 50 $1.42 100 $1.11 500 $0.94 1000 $0.92
IRF9540PBF DISTI #	Vishay Intertechnologies	MOSFET, P, -100V, -19A, TO-220 RoHS: Compliant	1037	1 $2.59 10 $2.14 100 $1.63 500 $1.4 1000 $1.11 2500 $1.04 5000 $0.981 10000 $0.945
IRF9540PBF DISTI #	Vishay Intertechnologies	MOSFET -100V Single P-Channel HEXFET RoHS: Compliant	9350	50 $0.782 100 $0.692 250 $0.63 500 $0.615 1000 $0.582

IRF9540~~(17)~~
IRF954~~(18)~~
IRF95~~(63)~~
IRF9~~(69)~~
IRF~~(69)~~

Vishay Siliconix IRF9540PBF

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