IRF9530

Vishay Siliconix IRF9530

Part Number:
IRF9530
Manufacturer:
Vishay Siliconix
Ventron No:
2488280-IRF9530
Description:
MOSFET P-CH 100V 12A TO-220AB
ECAD Model:
Datasheet:
IRF9530

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Specifications
Vishay Siliconix IRF9530 technical specifications, attributes, parameters and parts with similar specifications to Vishay Siliconix IRF9530.
  • Mount
    Through Hole
  • Mounting Type
    Through Hole
  • Package / Case
    TO-220-3
  • Number of Pins
    3
  • Supplier Device Package
    TO-220AB
  • Weight
    6.000006g
  • Operating Temperature
    -55°C~175°C TJ
  • Packaging
    Tube
  • Published
    2011
  • Part Status
    Obsolete
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Max Operating Temperature
    175°C
  • Min Operating Temperature
    -55°C
  • Voltage - Rated DC
    -100V
  • Technology
    MOSFET (Metal Oxide)
  • Current Rating
    -12A
  • Number of Elements
    1
  • Number of Channels
    1
  • Power Dissipation-Max
    88W Tc
  • Element Configuration
    Single
  • Power Dissipation
    88W
  • Turn On Delay Time
    12 ns
  • FET Type
    P-Channel
  • Rds On (Max) @ Id, Vgs
    300mOhm @ 7.2A, 10V
  • Vgs(th) (Max) @ Id
    4V @ 250μA
  • Input Capacitance (Ciss) (Max) @ Vds
    860pF @ 25V
  • Current - Continuous Drain (Id) @ 25°C
    12A Tc
  • Gate Charge (Qg) (Max) @ Vgs
    38nC @ 10V
  • Rise Time
    52ns
  • Drain to Source Voltage (Vdss)
    100V
  • Drive Voltage (Max Rds On,Min Rds On)
    10V
  • Vgs (Max)
    ±20V
  • Fall Time (Typ)
    39 ns
  • Turn-Off Delay Time
    31 ns
  • Continuous Drain Current (ID)
    12A
  • Gate to Source Voltage (Vgs)
    20V
  • Drain to Source Breakdown Voltage
    -100V
  • Input Capacitance
    860pF
  • Drain to Source Resistance
    300mOhm
  • Rds On Max
    300 mΩ
  • Height
    9.01mm
  • Length
    10.41mm
  • Width
    4.7mm
  • Radiation Hardening
    No
  • RoHS Status
    Non-RoHS Compliant
  • Lead Free
    Contains Lead
Description
IRF9530 Overview
The maximum input capacitance of this device is 860pF @ 25V, because the input capacitance of an op amp is defined as the difference between the input terminals with one input grounded.Continuous drain current (ID) is the maximum continuous current (ID) the device can conduct, and it is 12A.When VGS=-100V, and ID flows to VDS at -100VVDS, the drain-source breakdown voltage is -100V in this device.Before drain current conduction can begin, the device's turn-off delay time must be charged up to full capacitance. This value is 31 ns.MOSFETs exhibit Drain-to-Source Resistance when a specific gate-to-source voltage (VGS) is applied to bias them into the on state, and this device's resistance is 300mOhm.During device turn-on, the input capacitance must be charged for a period of time before drain current conduction can begin, so its delay time is 12 ns seconds.Single MOSFETs transistor is the voltage across the gate-source terminal of a transistor that determines the gate-source voltage, VGS.The drain-to-source voltage (Vdss) of this transistor needs to be at 100V in order to operate.Using drive voltage (10V), this device helps reduce its power consumption.

IRF9530 Features
a continuous drain current (ID) of 12A
a drain-to-source breakdown voltage of -100V voltage
the turn-off delay time is 31 ns
single MOSFETs transistor is 300mOhm
a 100V drain to source voltage (Vdss)


IRF9530 Applications
There are a lot of Vishay Siliconix
IRF9530 applications of single MOSFETs transistors.


Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
IRF9530 More Descriptions
100V Single P-Channel HEXFET Power MOSFET in a TO-220AB package
Trans MOSFET P-CH 100V 12A 3-Pin(3 Tab) TO-220AB
Power Field-Effect Transistor, 12A I(D), 100V, 0.3ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
Product Comparison
The three parts on the right have similar specifications to IRF9530.
  • Image
    Part Number
    Manufacturer
    Mount
    Mounting Type
    Package / Case
    Number of Pins
    Supplier Device Package
    Weight
    Operating Temperature
    Packaging
    Published
    Part Status
    Moisture Sensitivity Level (MSL)
    Max Operating Temperature
    Min Operating Temperature
    Voltage - Rated DC
    Technology
    Current Rating
    Number of Elements
    Number of Channels
    Power Dissipation-Max
    Element Configuration
    Power Dissipation
    Turn On Delay Time
    FET Type
    Rds On (Max) @ Id, Vgs
    Vgs(th) (Max) @ Id
    Input Capacitance (Ciss) (Max) @ Vds
    Current - Continuous Drain (Id) @ 25°C
    Gate Charge (Qg) (Max) @ Vgs
    Rise Time
    Drain to Source Voltage (Vdss)
    Drive Voltage (Max Rds On,Min Rds On)
    Vgs (Max)
    Fall Time (Typ)
    Turn-Off Delay Time
    Continuous Drain Current (ID)
    Gate to Source Voltage (Vgs)
    Drain to Source Breakdown Voltage
    Input Capacitance
    Drain to Source Resistance
    Rds On Max
    Height
    Length
    Width
    Radiation Hardening
    RoHS Status
    Lead Free
    Surface Mount
    Transistor Element Material
    Series
    JESD-609 Code
    Number of Terminations
    ECCN Code
    Terminal Finish
    Additional Feature
    HTS Code
    Terminal Position
    Terminal Form
    Peak Reflow Temperature (Cel)
    Time@Peak Reflow Temperature-Max (s)
    JESD-30 Code
    Qualification Status
    Configuration
    Operating Mode
    Case Connection
    Transistor Application
    Drain Current-Max (Abs) (ID)
    Drain-source On Resistance-Max
    Pulsed Drain Current-Max (IDM)
    DS Breakdown Voltage-Min
    Avalanche Energy Rating (Eas)
    JEDEC-95 Code
    Max Power Dissipation
    View Compare
  • IRF9530
    IRF9530
    Through Hole
    Through Hole
    TO-220-3
    3
    TO-220AB
    6.000006g
    -55°C~175°C TJ
    Tube
    2011
    Obsolete
    1 (Unlimited)
    175°C
    -55°C
    -100V
    MOSFET (Metal Oxide)
    -12A
    1
    1
    88W Tc
    Single
    88W
    12 ns
    P-Channel
    300mOhm @ 7.2A, 10V
    4V @ 250μA
    860pF @ 25V
    12A Tc
    38nC @ 10V
    52ns
    100V
    10V
    ±20V
    39 ns
    31 ns
    12A
    20V
    -100V
    860pF
    300mOhm
    300 mΩ
    9.01mm
    10.41mm
    4.7mm
    No
    Non-RoHS Compliant
    Contains Lead
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • IRF9520NS
    -
    Surface Mount
    TO-263-3, D2Pak (2 Leads Tab), TO-263AB
    -
    -
    -
    -55°C~175°C TJ
    Tube
    1998
    Obsolete
    1 (Unlimited)
    -
    -
    -
    MOSFET (Metal Oxide)
    -
    1
    -
    3.8W Ta 48W Tc
    -
    -
    -
    P-Channel
    480m Ω @ 4A, 10V
    4V @ 250μA
    350pF @ 25V
    6.8A Tc
    27nC @ 10V
    -
    100V
    10V
    ±20V
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    Non-RoHS Compliant
    -
    YES
    SILICON
    HEXFET®
    e0
    2
    EAR99
    Tin/Lead (Sn/Pb)
    AVALANCHE RATED, HIGH RELIABILITY
    8541.29.00.95
    SINGLE
    GULL WING
    225
    30
    R-PSSO-G2
    Not Qualified
    SINGLE WITH BUILT-IN DIODE
    ENHANCEMENT MODE
    DRAIN
    SWITCHING
    6.8A
    0.48Ohm
    27A
    100V
    140 mJ
    -
    -
  • IRF9410
    -
    Surface Mount
    8-SOIC (0.154, 3.90mm Width)
    -
    -
    -
    -55°C~150°C TJ
    Tube
    1997
    Obsolete
    1 (Unlimited)
    -
    -
    -
    MOSFET (Metal Oxide)
    -
    1
    -
    2.5W Ta
    -
    -
    -
    N-Channel
    30m Ω @ 7A, 10V
    1V @ 250μA
    550pF @ 25V
    7A Ta
    27nC @ 10V
    -
    30V
    4.5V 10V
    ±20V
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    Non-RoHS Compliant
    -
    YES
    SILICON
    HEXFET®
    -
    8
    EAR99
    NOT SPECIFIED
    HIGH RELIABILITY
    -
    DUAL
    GULL WING
    NOT SPECIFIED
    NOT SPECIFIED
    R-PDSO-G8
    Not Qualified
    SINGLE WITH BUILT-IN DIODE
    ENHANCEMENT MODE
    -
    SWITCHING
    7A
    0.03Ohm
    37A
    30V
    70 mJ
    MS-012AA
    -
  • IRF9540L
    Through Hole
    Through Hole
    TO-262-3 Long Leads, I2Pak, TO-262AA
    -
    I2PAK
    -
    -55°C~175°C TJ
    Tube
    2016
    Active
    1 (Unlimited)
    -
    -
    -
    MOSFET (Metal Oxide)
    -
    -
    -
    -
    -
    -
    -
    P-Channel
    200mOhm @ 11A, 10V
    4V @ 250μA
    1400pF @ 25V
    19A Tc
    61nC @ 10V
    -
    100V
    10V
    ±20V
    -
    -
    19A
    -
    -
    1.4nF
    -
    200 mΩ
    -
    -
    -
    -
    Non-RoHS Compliant
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    3.7W
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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