Vishay Siliconix IRF9530
- Part Number:
- IRF9530
- Manufacturer:
- Vishay Siliconix
- Ventron No:
- 2488280-IRF9530
- Description:
- MOSFET P-CH 100V 12A TO-220AB
- Datasheet:
- IRF9530
Vishay Siliconix IRF9530 technical specifications, attributes, parameters and parts with similar specifications to Vishay Siliconix IRF9530.
- MountThrough Hole
- Mounting TypeThrough Hole
- Package / CaseTO-220-3
- Number of Pins3
- Supplier Device PackageTO-220AB
- Weight6.000006g
- Operating Temperature-55°C~175°C TJ
- PackagingTube
- Published2011
- Part StatusObsolete
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Max Operating Temperature175°C
- Min Operating Temperature-55°C
- Voltage - Rated DC-100V
- TechnologyMOSFET (Metal Oxide)
- Current Rating-12A
- Number of Elements1
- Number of Channels1
- Power Dissipation-Max88W Tc
- Element ConfigurationSingle
- Power Dissipation88W
- Turn On Delay Time12 ns
- FET TypeP-Channel
- Rds On (Max) @ Id, Vgs300mOhm @ 7.2A, 10V
- Vgs(th) (Max) @ Id4V @ 250μA
- Input Capacitance (Ciss) (Max) @ Vds860pF @ 25V
- Current - Continuous Drain (Id) @ 25°C12A Tc
- Gate Charge (Qg) (Max) @ Vgs38nC @ 10V
- Rise Time52ns
- Drain to Source Voltage (Vdss)100V
- Drive Voltage (Max Rds On,Min Rds On)10V
- Vgs (Max)±20V
- Fall Time (Typ)39 ns
- Turn-Off Delay Time31 ns
- Continuous Drain Current (ID)12A
- Gate to Source Voltage (Vgs)20V
- Drain to Source Breakdown Voltage-100V
- Input Capacitance860pF
- Drain to Source Resistance300mOhm
- Rds On Max300 mΩ
- Height9.01mm
- Length10.41mm
- Width4.7mm
- Radiation HardeningNo
- RoHS StatusNon-RoHS Compliant
- Lead FreeContains Lead
IRF9530 Overview
The maximum input capacitance of this device is 860pF @ 25V, because the input capacitance of an op amp is defined as the difference between the input terminals with one input grounded.Continuous drain current (ID) is the maximum continuous current (ID) the device can conduct, and it is 12A.When VGS=-100V, and ID flows to VDS at -100VVDS, the drain-source breakdown voltage is -100V in this device.Before drain current conduction can begin, the device's turn-off delay time must be charged up to full capacitance. This value is 31 ns.MOSFETs exhibit Drain-to-Source Resistance when a specific gate-to-source voltage (VGS) is applied to bias them into the on state, and this device's resistance is 300mOhm.During device turn-on, the input capacitance must be charged for a period of time before drain current conduction can begin, so its delay time is 12 ns seconds.Single MOSFETs transistor is the voltage across the gate-source terminal of a transistor that determines the gate-source voltage, VGS.The drain-to-source voltage (Vdss) of this transistor needs to be at 100V in order to operate.Using drive voltage (10V), this device helps reduce its power consumption.
IRF9530 Features
a continuous drain current (ID) of 12A
a drain-to-source breakdown voltage of -100V voltage
the turn-off delay time is 31 ns
single MOSFETs transistor is 300mOhm
a 100V drain to source voltage (Vdss)
IRF9530 Applications
There are a lot of Vishay Siliconix
IRF9530 applications of single MOSFETs transistors.
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
The maximum input capacitance of this device is 860pF @ 25V, because the input capacitance of an op amp is defined as the difference between the input terminals with one input grounded.Continuous drain current (ID) is the maximum continuous current (ID) the device can conduct, and it is 12A.When VGS=-100V, and ID flows to VDS at -100VVDS, the drain-source breakdown voltage is -100V in this device.Before drain current conduction can begin, the device's turn-off delay time must be charged up to full capacitance. This value is 31 ns.MOSFETs exhibit Drain-to-Source Resistance when a specific gate-to-source voltage (VGS) is applied to bias them into the on state, and this device's resistance is 300mOhm.During device turn-on, the input capacitance must be charged for a period of time before drain current conduction can begin, so its delay time is 12 ns seconds.Single MOSFETs transistor is the voltage across the gate-source terminal of a transistor that determines the gate-source voltage, VGS.The drain-to-source voltage (Vdss) of this transistor needs to be at 100V in order to operate.Using drive voltage (10V), this device helps reduce its power consumption.
IRF9530 Features
a continuous drain current (ID) of 12A
a drain-to-source breakdown voltage of -100V voltage
the turn-off delay time is 31 ns
single MOSFETs transistor is 300mOhm
a 100V drain to source voltage (Vdss)
IRF9530 Applications
There are a lot of Vishay Siliconix
IRF9530 applications of single MOSFETs transistors.
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
IRF9530 More Descriptions
100V Single P-Channel HEXFET Power MOSFET in a TO-220AB package
Trans MOSFET P-CH 100V 12A 3-Pin(3 Tab) TO-220AB
Power Field-Effect Transistor, 12A I(D), 100V, 0.3ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
Trans MOSFET P-CH 100V 12A 3-Pin(3 Tab) TO-220AB
Power Field-Effect Transistor, 12A I(D), 100V, 0.3ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
The three parts on the right have similar specifications to IRF9530.
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ImagePart NumberManufacturerMountMounting TypePackage / CaseNumber of PinsSupplier Device PackageWeightOperating TemperaturePackagingPublishedPart StatusMoisture Sensitivity Level (MSL)Max Operating TemperatureMin Operating TemperatureVoltage - Rated DCTechnologyCurrent RatingNumber of ElementsNumber of ChannelsPower Dissipation-MaxElement ConfigurationPower DissipationTurn On Delay TimeFET TypeRds On (Max) @ Id, VgsVgs(th) (Max) @ IdInput Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25°CGate Charge (Qg) (Max) @ VgsRise TimeDrain to Source Voltage (Vdss)Drive Voltage (Max Rds On,Min Rds On)Vgs (Max)Fall Time (Typ)Turn-Off Delay TimeContinuous Drain Current (ID)Gate to Source Voltage (Vgs)Drain to Source Breakdown VoltageInput CapacitanceDrain to Source ResistanceRds On MaxHeightLengthWidthRadiation HardeningRoHS StatusLead FreeSurface MountTransistor Element MaterialSeriesJESD-609 CodeNumber of TerminationsECCN CodeTerminal FinishAdditional FeatureHTS CodeTerminal PositionTerminal FormPeak Reflow Temperature (Cel)Time@Peak Reflow Temperature-Max (s)JESD-30 CodeQualification StatusConfigurationOperating ModeCase ConnectionTransistor ApplicationDrain Current-Max (Abs) (ID)Drain-source On Resistance-MaxPulsed Drain Current-Max (IDM)DS Breakdown Voltage-MinAvalanche Energy Rating (Eas)JEDEC-95 CodeMax Power DissipationView Compare
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IRF9530Through HoleThrough HoleTO-220-33TO-220AB6.000006g-55°C~175°C TJTube2011Obsolete1 (Unlimited)175°C-55°C-100VMOSFET (Metal Oxide)-12A1188W TcSingle88W12 nsP-Channel300mOhm @ 7.2A, 10V4V @ 250μA860pF @ 25V12A Tc38nC @ 10V52ns100V10V±20V39 ns31 ns12A20V-100V860pF300mOhm300 mΩ9.01mm10.41mm4.7mmNoNon-RoHS CompliantContains Lead---------------------------
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-Surface MountTO-263-3, D2Pak (2 Leads Tab), TO-263AB----55°C~175°C TJTube1998Obsolete1 (Unlimited)---MOSFET (Metal Oxide)-1-3.8W Ta 48W Tc---P-Channel480m Ω @ 4A, 10V4V @ 250μA350pF @ 25V6.8A Tc27nC @ 10V-100V10V±20V------------Non-RoHS Compliant-YESSILICONHEXFET®e02EAR99Tin/Lead (Sn/Pb)AVALANCHE RATED, HIGH RELIABILITY8541.29.00.95SINGLEGULL WING22530R-PSSO-G2Not QualifiedSINGLE WITH BUILT-IN DIODEENHANCEMENT MODEDRAINSWITCHING6.8A0.48Ohm27A100V140 mJ--
-
-Surface Mount8-SOIC (0.154, 3.90mm Width)----55°C~150°C TJTube1997Obsolete1 (Unlimited)---MOSFET (Metal Oxide)-1-2.5W Ta---N-Channel30m Ω @ 7A, 10V1V @ 250μA550pF @ 25V7A Ta27nC @ 10V-30V4.5V 10V±20V------------Non-RoHS Compliant-YESSILICONHEXFET®-8EAR99NOT SPECIFIEDHIGH RELIABILITY-DUALGULL WINGNOT SPECIFIEDNOT SPECIFIEDR-PDSO-G8Not QualifiedSINGLE WITH BUILT-IN DIODEENHANCEMENT MODE-SWITCHING7A0.03Ohm37A30V70 mJMS-012AA-
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Through HoleThrough HoleTO-262-3 Long Leads, I2Pak, TO-262AA-I2PAK--55°C~175°C TJTube2016Active1 (Unlimited)---MOSFET (Metal Oxide)-------P-Channel200mOhm @ 11A, 10V4V @ 250μA1400pF @ 25V19A Tc61nC @ 10V-100V10V±20V--19A--1.4nF-200 mΩ----Non-RoHS Compliant--------------------------3.7W
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