IRF9520NSPBF

Infineon Technologies IRF9520NSPBF

Part Number:
IRF9520NSPBF
Manufacturer:
Infineon Technologies
Ventron No:
2493099-IRF9520NSPBF
Description:
MOSFET P-CH 100V 6.8A D2PAK
ECAD Model:
Datasheet:
IRF9520NSPBF

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Specifications
Infineon Technologies IRF9520NSPBF technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies IRF9520NSPBF.
  • Factory Lead Time
    9 Weeks
  • Mount
    Surface Mount
  • Mounting Type
    Surface Mount
  • Package / Case
    TO-263-3, D2Pak (2 Leads Tab), TO-263AB
  • Number of Pins
    3
  • Transistor Element Material
    SILICON
  • Operating Temperature
    -55°C~175°C TJ
  • Packaging
    Tube
  • Series
    HEXFET®
  • Published
    1998
  • JESD-609 Code
    e3
  • Part Status
    Obsolete
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    2
  • ECCN Code
    EAR99
  • Resistance
    480mOhm
  • Terminal Finish
    Matte Tin (Sn) - with Nickel (Ni) barrier
  • Additional Feature
    AVALANCHE RATED, HIGH RELIABILITY
  • Subcategory
    Other Transistors
  • Technology
    MOSFET (Metal Oxide)
  • Terminal Form
    GULL WING
  • Peak Reflow Temperature (Cel)
    260
  • Time@Peak Reflow Temperature-Max (s)
    30
  • JESD-30 Code
    R-PSSO-G2
  • Number of Elements
    1
  • Power Dissipation-Max
    3.8W Ta 48W Tc
  • Element Configuration
    Single
  • Operating Mode
    ENHANCEMENT MODE
  • Power Dissipation
    3.8W
  • Case Connection
    DRAIN
  • Turn On Delay Time
    14 ns
  • FET Type
    P-Channel
  • Transistor Application
    SWITCHING
  • Rds On (Max) @ Id, Vgs
    480m Ω @ 4A, 10V
  • Vgs(th) (Max) @ Id
    4V @ 250μA
  • Input Capacitance (Ciss) (Max) @ Vds
    350pF @ 25V
  • Current - Continuous Drain (Id) @ 25°C
    6.8A Tc
  • Gate Charge (Qg) (Max) @ Vgs
    27nC @ 10V
  • Rise Time
    47ns
  • Drain to Source Voltage (Vdss)
    100V
  • Drive Voltage (Max Rds On,Min Rds On)
    10V
  • Vgs (Max)
    ±20V
  • Fall Time (Typ)
    31 ns
  • Turn-Off Delay Time
    28 ns
  • Continuous Drain Current (ID)
    -6.8A
  • Threshold Voltage
    -4V
  • Gate to Source Voltage (Vgs)
    20V
  • Drain to Source Breakdown Voltage
    -100V
  • Pulsed Drain Current-Max (IDM)
    27A
  • Recovery Time
    150 ns
  • Nominal Vgs
    -4 V
  • Height
    4.826mm
  • Length
    10.668mm
  • Width
    9.65mm
  • REACH SVHC
    No SVHC
  • Radiation Hardening
    No
  • RoHS Status
    RoHS Compliant
  • Lead Free
    Lead Free
Description
IRF9520NSPBF Overview
With either input grounded, the input capacitance parameter, CI, represents the capacitance between the input terminals of the op amp. This device has a maximum input capacitance of 350pF @ 25V.A device's drain current is its maximum continuous current, and this device has a continuous drain current (ID) of -6.8A.With a drain-source breakdown voltage of -100V and a drain-source current flow rate of 1, this device has a drain-source breakdown voltage of -100V.The turn-off delay time is the amount of time it takes to charge the input capacitance of the device before drain current conduction can begin, and it is 28 ns.Peak drain current for this device is 27A, which is its maximum pulsed drain current.Input capacitance charging takes time before drain current conduction begins, so the turn-on delay time is 14 ns.Single MOSFETs transistor is the voltage that falls across the gate-source terminal of a FET transistor that is called the gate-source voltage, VGS.-4V is the threshold voltage at which an electrical device activates any of its operations.Single MOSFETs transistor is necessary to have a drain to source voltage (Vdss) of 100V.Using drive voltage (10V) reduces this device's overall power consumption.

IRF9520NSPBF Features
a continuous drain current (ID) of -6.8A
a drain-to-source breakdown voltage of -100V voltage
the turn-off delay time is 28 ns
based on its rated peak drain current 27A.
a threshold voltage of -4V
a 100V drain to source voltage (Vdss)


IRF9520NSPBF Applications
There are a lot of Infineon Technologies
IRF9520NSPBF applications of single MOSFETs transistors.


Lighting
Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
IRF9520NSPBF More Descriptions
-100V Single P-Channel HEXFET Power MOSFET in a D2-Pak package, D2PAK-3, RoHSInfineon SCT
Transistor MOSFET P Channel 100 Volt 6.8 Amp 3 Pin 2 Tab D2pak
MOSFET, P-CHANNEL, -100V, -6.8A, 480 MOHM, 18 NC QG, D2-PAK
Benefits: RoHS Compliant; Low RDS(on); Industry-leading quality; Dynamic dv/dt Rating; Fast Switching; Fully Avalanche Rated; 175C Operating Temperature; P-Channel MOSFET
MOSFET; Transistor Type:MOSFET; Transistor Polarity:P Channel; Drain Source Voltage, Vds:-100V; Continuous Drain Current, Id:-6.8A; On Resistance, Rds(on):480mohm; Rds(on) Test Voltage, Vgs:-10V; Package/Case:D2-PAK ;RoHS Compliant: Yes
Product Comparison
The three parts on the right have similar specifications to IRF9520NSPBF.
  • Image
    Part Number
    Manufacturer
    Factory Lead Time
    Mount
    Mounting Type
    Package / Case
    Number of Pins
    Transistor Element Material
    Operating Temperature
    Packaging
    Series
    Published
    JESD-609 Code
    Part Status
    Moisture Sensitivity Level (MSL)
    Number of Terminations
    ECCN Code
    Resistance
    Terminal Finish
    Additional Feature
    Subcategory
    Technology
    Terminal Form
    Peak Reflow Temperature (Cel)
    Time@Peak Reflow Temperature-Max (s)
    JESD-30 Code
    Number of Elements
    Power Dissipation-Max
    Element Configuration
    Operating Mode
    Power Dissipation
    Case Connection
    Turn On Delay Time
    FET Type
    Transistor Application
    Rds On (Max) @ Id, Vgs
    Vgs(th) (Max) @ Id
    Input Capacitance (Ciss) (Max) @ Vds
    Current - Continuous Drain (Id) @ 25°C
    Gate Charge (Qg) (Max) @ Vgs
    Rise Time
    Drain to Source Voltage (Vdss)
    Drive Voltage (Max Rds On,Min Rds On)
    Vgs (Max)
    Fall Time (Typ)
    Turn-Off Delay Time
    Continuous Drain Current (ID)
    Threshold Voltage
    Gate to Source Voltage (Vgs)
    Drain to Source Breakdown Voltage
    Pulsed Drain Current-Max (IDM)
    Recovery Time
    Nominal Vgs
    Height
    Length
    Width
    REACH SVHC
    Radiation Hardening
    RoHS Status
    Lead Free
    Supplier Device Package
    Surface Mount
    HTS Code
    Terminal Position
    Qualification Status
    Configuration
    Drain Current-Max (Abs) (ID)
    Drain-source On Resistance-Max
    DS Breakdown Voltage-Min
    Avalanche Energy Rating (Eas)
    JEDEC-95 Code
    View Compare
  • IRF9520NSPBF
    IRF9520NSPBF
    9 Weeks
    Surface Mount
    Surface Mount
    TO-263-3, D2Pak (2 Leads Tab), TO-263AB
    3
    SILICON
    -55°C~175°C TJ
    Tube
    HEXFET®
    1998
    e3
    Obsolete
    1 (Unlimited)
    2
    EAR99
    480mOhm
    Matte Tin (Sn) - with Nickel (Ni) barrier
    AVALANCHE RATED, HIGH RELIABILITY
    Other Transistors
    MOSFET (Metal Oxide)
    GULL WING
    260
    30
    R-PSSO-G2
    1
    3.8W Ta 48W Tc
    Single
    ENHANCEMENT MODE
    3.8W
    DRAIN
    14 ns
    P-Channel
    SWITCHING
    480m Ω @ 4A, 10V
    4V @ 250μA
    350pF @ 25V
    6.8A Tc
    27nC @ 10V
    47ns
    100V
    10V
    ±20V
    31 ns
    28 ns
    -6.8A
    -4V
    20V
    -100V
    27A
    150 ns
    -4 V
    4.826mm
    10.668mm
    9.65mm
    No SVHC
    No
    RoHS Compliant
    Lead Free
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • IRF9520NLPBF
    -
    -
    Through Hole
    TO-262-3 Long Leads, I2Pak, TO-262AA
    -
    -
    -55°C~175°C TJ
    Tube
    HEXFET®
    2005
    -
    Obsolete
    1 (Unlimited)
    -
    -
    -
    -
    -
    -
    MOSFET (Metal Oxide)
    -
    -
    -
    -
    -
    3.8W Ta 48W Tc
    -
    -
    -
    -
    -
    P-Channel
    -
    480mOhm @ 4A, 10V
    4V @ 250μA
    350pF @ 25V
    6.8A Tc
    27nC @ 10V
    -
    100V
    10V
    ±20V
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    TO-262
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • IRF9520NS
    -
    -
    Surface Mount
    TO-263-3, D2Pak (2 Leads Tab), TO-263AB
    -
    SILICON
    -55°C~175°C TJ
    Tube
    HEXFET®
    1998
    e0
    Obsolete
    1 (Unlimited)
    2
    EAR99
    -
    Tin/Lead (Sn/Pb)
    AVALANCHE RATED, HIGH RELIABILITY
    -
    MOSFET (Metal Oxide)
    GULL WING
    225
    30
    R-PSSO-G2
    1
    3.8W Ta 48W Tc
    -
    ENHANCEMENT MODE
    -
    DRAIN
    -
    P-Channel
    SWITCHING
    480m Ω @ 4A, 10V
    4V @ 250μA
    350pF @ 25V
    6.8A Tc
    27nC @ 10V
    -
    100V
    10V
    ±20V
    -
    -
    -
    -
    -
    -
    27A
    -
    -
    -
    -
    -
    -
    -
    Non-RoHS Compliant
    -
    -
    YES
    8541.29.00.95
    SINGLE
    Not Qualified
    SINGLE WITH BUILT-IN DIODE
    6.8A
    0.48Ohm
    100V
    140 mJ
    -
  • IRF9410
    -
    -
    Surface Mount
    8-SOIC (0.154, 3.90mm Width)
    -
    SILICON
    -55°C~150°C TJ
    Tube
    HEXFET®
    1997
    -
    Obsolete
    1 (Unlimited)
    8
    EAR99
    -
    NOT SPECIFIED
    HIGH RELIABILITY
    -
    MOSFET (Metal Oxide)
    GULL WING
    NOT SPECIFIED
    NOT SPECIFIED
    R-PDSO-G8
    1
    2.5W Ta
    -
    ENHANCEMENT MODE
    -
    -
    -
    N-Channel
    SWITCHING
    30m Ω @ 7A, 10V
    1V @ 250μA
    550pF @ 25V
    7A Ta
    27nC @ 10V
    -
    30V
    4.5V 10V
    ±20V
    -
    -
    -
    -
    -
    -
    37A
    -
    -
    -
    -
    -
    -
    -
    Non-RoHS Compliant
    -
    -
    YES
    -
    DUAL
    Not Qualified
    SINGLE WITH BUILT-IN DIODE
    7A
    0.03Ohm
    30V
    70 mJ
    MS-012AA
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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