Infineon Technologies IRF9520NSPBF
- Part Number:
- IRF9520NSPBF
- Manufacturer:
- Infineon Technologies
- Ventron No:
- 2493099-IRF9520NSPBF
- Description:
- MOSFET P-CH 100V 6.8A D2PAK
- Datasheet:
- IRF9520NSPBF
Infineon Technologies IRF9520NSPBF technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies IRF9520NSPBF.
- Factory Lead Time9 Weeks
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / CaseTO-263-3, D2Pak (2 Leads Tab), TO-263AB
- Number of Pins3
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~175°C TJ
- PackagingTube
- SeriesHEXFET®
- Published1998
- JESD-609 Codee3
- Part StatusObsolete
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations2
- ECCN CodeEAR99
- Resistance480mOhm
- Terminal FinishMatte Tin (Sn) - with Nickel (Ni) barrier
- Additional FeatureAVALANCHE RATED, HIGH RELIABILITY
- SubcategoryOther Transistors
- TechnologyMOSFET (Metal Oxide)
- Terminal FormGULL WING
- Peak Reflow Temperature (Cel)260
- Time@Peak Reflow Temperature-Max (s)30
- JESD-30 CodeR-PSSO-G2
- Number of Elements1
- Power Dissipation-Max3.8W Ta 48W Tc
- Element ConfigurationSingle
- Operating ModeENHANCEMENT MODE
- Power Dissipation3.8W
- Case ConnectionDRAIN
- Turn On Delay Time14 ns
- FET TypeP-Channel
- Transistor ApplicationSWITCHING
- Rds On (Max) @ Id, Vgs480m Ω @ 4A, 10V
- Vgs(th) (Max) @ Id4V @ 250μA
- Input Capacitance (Ciss) (Max) @ Vds350pF @ 25V
- Current - Continuous Drain (Id) @ 25°C6.8A Tc
- Gate Charge (Qg) (Max) @ Vgs27nC @ 10V
- Rise Time47ns
- Drain to Source Voltage (Vdss)100V
- Drive Voltage (Max Rds On,Min Rds On)10V
- Vgs (Max)±20V
- Fall Time (Typ)31 ns
- Turn-Off Delay Time28 ns
- Continuous Drain Current (ID)-6.8A
- Threshold Voltage-4V
- Gate to Source Voltage (Vgs)20V
- Drain to Source Breakdown Voltage-100V
- Pulsed Drain Current-Max (IDM)27A
- Recovery Time150 ns
- Nominal Vgs-4 V
- Height4.826mm
- Length10.668mm
- Width9.65mm
- REACH SVHCNo SVHC
- Radiation HardeningNo
- RoHS StatusRoHS Compliant
- Lead FreeLead Free
IRF9520NSPBF Overview
With either input grounded, the input capacitance parameter, CI, represents the capacitance between the input terminals of the op amp. This device has a maximum input capacitance of 350pF @ 25V.A device's drain current is its maximum continuous current, and this device has a continuous drain current (ID) of -6.8A.With a drain-source breakdown voltage of -100V and a drain-source current flow rate of 1, this device has a drain-source breakdown voltage of -100V.The turn-off delay time is the amount of time it takes to charge the input capacitance of the device before drain current conduction can begin, and it is 28 ns.Peak drain current for this device is 27A, which is its maximum pulsed drain current.Input capacitance charging takes time before drain current conduction begins, so the turn-on delay time is 14 ns.Single MOSFETs transistor is the voltage that falls across the gate-source terminal of a FET transistor that is called the gate-source voltage, VGS.-4V is the threshold voltage at which an electrical device activates any of its operations.Single MOSFETs transistor is necessary to have a drain to source voltage (Vdss) of 100V.Using drive voltage (10V) reduces this device's overall power consumption.
IRF9520NSPBF Features
a continuous drain current (ID) of -6.8A
a drain-to-source breakdown voltage of -100V voltage
the turn-off delay time is 28 ns
based on its rated peak drain current 27A.
a threshold voltage of -4V
a 100V drain to source voltage (Vdss)
IRF9520NSPBF Applications
There are a lot of Infineon Technologies
IRF9520NSPBF applications of single MOSFETs transistors.
Lighting
Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
With either input grounded, the input capacitance parameter, CI, represents the capacitance between the input terminals of the op amp. This device has a maximum input capacitance of 350pF @ 25V.A device's drain current is its maximum continuous current, and this device has a continuous drain current (ID) of -6.8A.With a drain-source breakdown voltage of -100V and a drain-source current flow rate of 1, this device has a drain-source breakdown voltage of -100V.The turn-off delay time is the amount of time it takes to charge the input capacitance of the device before drain current conduction can begin, and it is 28 ns.Peak drain current for this device is 27A, which is its maximum pulsed drain current.Input capacitance charging takes time before drain current conduction begins, so the turn-on delay time is 14 ns.Single MOSFETs transistor is the voltage that falls across the gate-source terminal of a FET transistor that is called the gate-source voltage, VGS.-4V is the threshold voltage at which an electrical device activates any of its operations.Single MOSFETs transistor is necessary to have a drain to source voltage (Vdss) of 100V.Using drive voltage (10V) reduces this device's overall power consumption.
IRF9520NSPBF Features
a continuous drain current (ID) of -6.8A
a drain-to-source breakdown voltage of -100V voltage
the turn-off delay time is 28 ns
based on its rated peak drain current 27A.
a threshold voltage of -4V
a 100V drain to source voltage (Vdss)
IRF9520NSPBF Applications
There are a lot of Infineon Technologies
IRF9520NSPBF applications of single MOSFETs transistors.
Lighting
Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
IRF9520NSPBF More Descriptions
-100V Single P-Channel HEXFET Power MOSFET in a D2-Pak package, D2PAK-3, RoHSInfineon SCT
Transistor MOSFET P Channel 100 Volt 6.8 Amp 3 Pin 2 Tab D2pak
MOSFET, P-CHANNEL, -100V, -6.8A, 480 MOHM, 18 NC QG, D2-PAK
Benefits: RoHS Compliant; Low RDS(on); Industry-leading quality; Dynamic dv/dt Rating; Fast Switching; Fully Avalanche Rated; 175C Operating Temperature; P-Channel MOSFET
MOSFET; Transistor Type:MOSFET; Transistor Polarity:P Channel; Drain Source Voltage, Vds:-100V; Continuous Drain Current, Id:-6.8A; On Resistance, Rds(on):480mohm; Rds(on) Test Voltage, Vgs:-10V; Package/Case:D2-PAK ;RoHS Compliant: Yes
Transistor MOSFET P Channel 100 Volt 6.8 Amp 3 Pin 2 Tab D2pak
MOSFET, P-CHANNEL, -100V, -6.8A, 480 MOHM, 18 NC QG, D2-PAK
Benefits: RoHS Compliant; Low RDS(on); Industry-leading quality; Dynamic dv/dt Rating; Fast Switching; Fully Avalanche Rated; 175C Operating Temperature; P-Channel MOSFET
MOSFET; Transistor Type:MOSFET; Transistor Polarity:P Channel; Drain Source Voltage, Vds:-100V; Continuous Drain Current, Id:-6.8A; On Resistance, Rds(on):480mohm; Rds(on) Test Voltage, Vgs:-10V; Package/Case:D2-PAK ;RoHS Compliant: Yes
The three parts on the right have similar specifications to IRF9520NSPBF.
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ImagePart NumberManufacturerFactory Lead TimeMountMounting TypePackage / CaseNumber of PinsTransistor Element MaterialOperating TemperaturePackagingSeriesPublishedJESD-609 CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeResistanceTerminal FinishAdditional FeatureSubcategoryTechnologyTerminal FormPeak Reflow Temperature (Cel)Time@Peak Reflow Temperature-Max (s)JESD-30 CodeNumber of ElementsPower Dissipation-MaxElement ConfigurationOperating ModePower DissipationCase ConnectionTurn On Delay TimeFET TypeTransistor ApplicationRds On (Max) @ Id, VgsVgs(th) (Max) @ IdInput Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25°CGate Charge (Qg) (Max) @ VgsRise TimeDrain to Source Voltage (Vdss)Drive Voltage (Max Rds On,Min Rds On)Vgs (Max)Fall Time (Typ)Turn-Off Delay TimeContinuous Drain Current (ID)Threshold VoltageGate to Source Voltage (Vgs)Drain to Source Breakdown VoltagePulsed Drain Current-Max (IDM)Recovery TimeNominal VgsHeightLengthWidthREACH SVHCRadiation HardeningRoHS StatusLead FreeSupplier Device PackageSurface MountHTS CodeTerminal PositionQualification StatusConfigurationDrain Current-Max (Abs) (ID)Drain-source On Resistance-MaxDS Breakdown Voltage-MinAvalanche Energy Rating (Eas)JEDEC-95 CodeView Compare
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IRF9520NSPBF9 WeeksSurface MountSurface MountTO-263-3, D2Pak (2 Leads Tab), TO-263AB3SILICON-55°C~175°C TJTubeHEXFET®1998e3Obsolete1 (Unlimited)2EAR99480mOhmMatte Tin (Sn) - with Nickel (Ni) barrierAVALANCHE RATED, HIGH RELIABILITYOther TransistorsMOSFET (Metal Oxide)GULL WING26030R-PSSO-G213.8W Ta 48W TcSingleENHANCEMENT MODE3.8WDRAIN14 nsP-ChannelSWITCHING480m Ω @ 4A, 10V4V @ 250μA350pF @ 25V6.8A Tc27nC @ 10V47ns100V10V±20V31 ns28 ns-6.8A-4V20V-100V27A150 ns-4 V4.826mm10.668mm9.65mmNo SVHCNoRoHS CompliantLead Free------------
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--Through HoleTO-262-3 Long Leads, I2Pak, TO-262AA---55°C~175°C TJTubeHEXFET®2005-Obsolete1 (Unlimited)------MOSFET (Metal Oxide)-----3.8W Ta 48W Tc-----P-Channel-480mOhm @ 4A, 10V4V @ 250μA350pF @ 25V6.8A Tc27nC @ 10V-100V10V±20V----------------TO-262----------
-
--Surface MountTO-263-3, D2Pak (2 Leads Tab), TO-263AB-SILICON-55°C~175°C TJTubeHEXFET®1998e0Obsolete1 (Unlimited)2EAR99-Tin/Lead (Sn/Pb)AVALANCHE RATED, HIGH RELIABILITY-MOSFET (Metal Oxide)GULL WING22530R-PSSO-G213.8W Ta 48W Tc-ENHANCEMENT MODE-DRAIN-P-ChannelSWITCHING480m Ω @ 4A, 10V4V @ 250μA350pF @ 25V6.8A Tc27nC @ 10V-100V10V±20V------27A-------Non-RoHS Compliant--YES8541.29.00.95SINGLENot QualifiedSINGLE WITH BUILT-IN DIODE6.8A0.48Ohm100V140 mJ-
-
--Surface Mount8-SOIC (0.154, 3.90mm Width)-SILICON-55°C~150°C TJTubeHEXFET®1997-Obsolete1 (Unlimited)8EAR99-NOT SPECIFIEDHIGH RELIABILITY-MOSFET (Metal Oxide)GULL WINGNOT SPECIFIEDNOT SPECIFIEDR-PDSO-G812.5W Ta-ENHANCEMENT MODE---N-ChannelSWITCHING30m Ω @ 7A, 10V1V @ 250μA550pF @ 25V7A Ta27nC @ 10V-30V4.5V 10V±20V------37A-------Non-RoHS Compliant--YES-DUALNot QualifiedSINGLE WITH BUILT-IN DIODE7A0.03Ohm30V70 mJMS-012AA
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