Vishay Siliconix IRF9520
- Part Number:
- IRF9520
- Manufacturer:
- Vishay Siliconix
- Ventron No:
- 2488259-IRF9520
- Description:
- MOSFET P-CH 100V 6.8A TO-220AB
- Datasheet:
- IRF9520
Vishay Siliconix IRF9520 technical specifications, attributes, parameters and parts with similar specifications to Vishay Siliconix IRF9520.
- MountThrough Hole
- Mounting TypeThrough Hole
- Package / CaseTO-220-3
- Number of Pins3
- Supplier Device PackageTO-220AB
- Weight6.000006g
- Operating Temperature-55°C~175°C TJ
- PackagingTube
- Published2011
- Part StatusObsolete
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Resistance600mOhm
- Max Operating Temperature175°C
- Min Operating Temperature-55°C
- TechnologyMOSFET (Metal Oxide)
- Number of Elements1
- Number of Channels1
- Power Dissipation-Max60W Tc
- Element ConfigurationSingle
- Power Dissipation60W
- Turn On Delay Time9.6 ns
- FET TypeP-Channel
- Rds On (Max) @ Id, Vgs600mOhm @ 4.1A, 10V
- Vgs(th) (Max) @ Id4V @ 250μA
- Input Capacitance (Ciss) (Max) @ Vds390pF @ 25V
- Current - Continuous Drain (Id) @ 25°C6.8A Tc
- Gate Charge (Qg) (Max) @ Vgs18nC @ 10V
- Rise Time29ns
- Drain to Source Voltage (Vdss)100V
- Drive Voltage (Max Rds On,Min Rds On)10V
- Vgs (Max)±20V
- Fall Time (Typ)25 ns
- Turn-Off Delay Time21 ns
- Continuous Drain Current (ID)6.8A
- Gate to Source Voltage (Vgs)20V
- Drain to Source Breakdown Voltage-100V
- Input Capacitance390pF
- Drain to Source Resistance600mOhm
- Rds On Max600 mΩ
- Height9.01mm
- Length10.41mm
- Width4.7mm
- Radiation HardeningNo
- RoHS StatusNon-RoHS Compliant
- Lead FreeContains Lead
IRF9520 Overview
The maximum input capacitance of this device is 390pF @ 25V, because the input capacitance of an op amp is defined as the difference between the input terminals with one input grounded.Continuous drain current (ID) is the maximum continuous current (ID) the device can conduct, and it is 6.8A.When VGS=-100V, and ID flows to VDS at -100VVDS, the drain-source breakdown voltage is -100V in this device.Before drain current conduction can begin, the device's turn-off delay time must be charged up to full capacitance. This value is 21 ns.MOSFETs exhibit Drain-to-Source Resistance when a specific gate-to-source voltage (VGS) is applied to bias them into the on state, and this device's resistance is 600mOhm.During device turn-on, the input capacitance must be charged for a period of time before drain current conduction can begin, so its delay time is 9.6 ns seconds.Single MOSFETs transistor is the voltage across the gate-source terminal of a transistor that determines the gate-source voltage, VGS.The drain-to-source voltage (Vdss) of this transistor needs to be at 100V in order to operate.Using drive voltage (10V), this device helps reduce its power consumption.
IRF9520 Features
a continuous drain current (ID) of 6.8A
a drain-to-source breakdown voltage of -100V voltage
the turn-off delay time is 21 ns
single MOSFETs transistor is 600mOhm
a 100V drain to source voltage (Vdss)
IRF9520 Applications
There are a lot of Vishay Siliconix
IRF9520 applications of single MOSFETs transistors.
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
The maximum input capacitance of this device is 390pF @ 25V, because the input capacitance of an op amp is defined as the difference between the input terminals with one input grounded.Continuous drain current (ID) is the maximum continuous current (ID) the device can conduct, and it is 6.8A.When VGS=-100V, and ID flows to VDS at -100VVDS, the drain-source breakdown voltage is -100V in this device.Before drain current conduction can begin, the device's turn-off delay time must be charged up to full capacitance. This value is 21 ns.MOSFETs exhibit Drain-to-Source Resistance when a specific gate-to-source voltage (VGS) is applied to bias them into the on state, and this device's resistance is 600mOhm.During device turn-on, the input capacitance must be charged for a period of time before drain current conduction can begin, so its delay time is 9.6 ns seconds.Single MOSFETs transistor is the voltage across the gate-source terminal of a transistor that determines the gate-source voltage, VGS.The drain-to-source voltage (Vdss) of this transistor needs to be at 100V in order to operate.Using drive voltage (10V), this device helps reduce its power consumption.
IRF9520 Features
a continuous drain current (ID) of 6.8A
a drain-to-source breakdown voltage of -100V voltage
the turn-off delay time is 21 ns
single MOSFETs transistor is 600mOhm
a 100V drain to source voltage (Vdss)
IRF9520 Applications
There are a lot of Vishay Siliconix
IRF9520 applications of single MOSFETs transistors.
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
IRF9520 More Descriptions
Trans MOSFET P-CH 100V 6.8A 3-Pin(3 Tab) TO-220AB
MOSFET P-CHANNEL 100V
French Electronic Distributor since 1988
MOSFET P-CHANNEL 100V
French Electronic Distributor since 1988
The three parts on the right have similar specifications to IRF9520.
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ImagePart NumberManufacturerMountMounting TypePackage / CaseNumber of PinsSupplier Device PackageWeightOperating TemperaturePackagingPublishedPart StatusMoisture Sensitivity Level (MSL)ResistanceMax Operating TemperatureMin Operating TemperatureTechnologyNumber of ElementsNumber of ChannelsPower Dissipation-MaxElement ConfigurationPower DissipationTurn On Delay TimeFET TypeRds On (Max) @ Id, VgsVgs(th) (Max) @ IdInput Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25°CGate Charge (Qg) (Max) @ VgsRise TimeDrain to Source Voltage (Vdss)Drive Voltage (Max Rds On,Min Rds On)Vgs (Max)Fall Time (Typ)Turn-Off Delay TimeContinuous Drain Current (ID)Gate to Source Voltage (Vgs)Drain to Source Breakdown VoltageInput CapacitanceDrain to Source ResistanceRds On MaxHeightLengthWidthRadiation HardeningRoHS StatusLead FreeMax Power DissipationFactory Lead TimeTransistor Element MaterialSeriesJESD-609 CodeNumber of TerminationsECCN CodeTerminal FinishSubcategoryTerminal PositionJESD-30 CodeConfigurationOperating ModeCase ConnectionTransistor ApplicationDrain-source On Resistance-MaxView Compare
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IRF9520Through HoleThrough HoleTO-220-33TO-220AB6.000006g-55°C~175°C TJTube2011Obsolete1 (Unlimited)600mOhm175°C-55°CMOSFET (Metal Oxide)1160W TcSingle60W9.6 nsP-Channel600mOhm @ 4.1A, 10V4V @ 250μA390pF @ 25V6.8A Tc18nC @ 10V29ns100V10V±20V25 ns21 ns6.8A20V-100V390pF600mOhm600 mΩ9.01mm10.41mm4.7mmNoNon-RoHS CompliantContains Lead-----------------
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Through HoleThrough HoleTO-262-3 Long Leads, I2Pak, TO-262AA----55°C~175°C TJTube2016Active1 (Unlimited)---MOSFET (Metal Oxide)------P-Channel300m Ω @ 7.2A, 10V4V @ 250μA860pF @ 25V12A Tc38nC @ 10V-100V10V±20V--12A---------Non-RoHS Compliant-3.7W---------------
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Through HoleThrough HoleTO-262-3 Long Leads, I2Pak, TO-262AA-I2PAK--55°C~175°C TJTube2016Active1 (Unlimited)---MOSFET (Metal Oxide)------P-Channel200mOhm @ 11A, 10V4V @ 250μA1400pF @ 25V19A Tc61nC @ 10V-100V10V±20V--19A--1.4nF-200 mΩ----Non-RoHS Compliant-3.7W---------------
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Surface MountSurface MountDirectFET™ Isometric MX7---40°C~150°C TJTape & Reel (TR)2011Active1 (Unlimited)---MOSFET (Metal Oxide)1-2.1W Ta 113W Tc-2.1W29 nsP-Channel2.9m Ω @ 22A, 10V2.4V @ 150μA7305pF @ 15V22A Ta 160A Tc130nC @ 10V160ns30V4.5V 10V±20V110 ns115 ns22A20V-30V------NoROHS3 CompliantLead Free-12 WeeksSILICONHEXFET®e33EAR99Matte Tin (Sn)Other TransistorsBOTTOMR-XBCC-N3SINGLE WITH BUILT-IN DIODEENHANCEMENT MODEDRAINSWITCHING0.0029Ohm
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