IRF9520

Vishay Siliconix IRF9520

Part Number:
IRF9520
Manufacturer:
Vishay Siliconix
Ventron No:
2488259-IRF9520
Description:
MOSFET P-CH 100V 6.8A TO-220AB
ECAD Model:
Datasheet:
IRF9520

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Specifications
Vishay Siliconix IRF9520 technical specifications, attributes, parameters and parts with similar specifications to Vishay Siliconix IRF9520.
  • Mount
    Through Hole
  • Mounting Type
    Through Hole
  • Package / Case
    TO-220-3
  • Number of Pins
    3
  • Supplier Device Package
    TO-220AB
  • Weight
    6.000006g
  • Operating Temperature
    -55°C~175°C TJ
  • Packaging
    Tube
  • Published
    2011
  • Part Status
    Obsolete
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Resistance
    600mOhm
  • Max Operating Temperature
    175°C
  • Min Operating Temperature
    -55°C
  • Technology
    MOSFET (Metal Oxide)
  • Number of Elements
    1
  • Number of Channels
    1
  • Power Dissipation-Max
    60W Tc
  • Element Configuration
    Single
  • Power Dissipation
    60W
  • Turn On Delay Time
    9.6 ns
  • FET Type
    P-Channel
  • Rds On (Max) @ Id, Vgs
    600mOhm @ 4.1A, 10V
  • Vgs(th) (Max) @ Id
    4V @ 250μA
  • Input Capacitance (Ciss) (Max) @ Vds
    390pF @ 25V
  • Current - Continuous Drain (Id) @ 25°C
    6.8A Tc
  • Gate Charge (Qg) (Max) @ Vgs
    18nC @ 10V
  • Rise Time
    29ns
  • Drain to Source Voltage (Vdss)
    100V
  • Drive Voltage (Max Rds On,Min Rds On)
    10V
  • Vgs (Max)
    ±20V
  • Fall Time (Typ)
    25 ns
  • Turn-Off Delay Time
    21 ns
  • Continuous Drain Current (ID)
    6.8A
  • Gate to Source Voltage (Vgs)
    20V
  • Drain to Source Breakdown Voltage
    -100V
  • Input Capacitance
    390pF
  • Drain to Source Resistance
    600mOhm
  • Rds On Max
    600 mΩ
  • Height
    9.01mm
  • Length
    10.41mm
  • Width
    4.7mm
  • Radiation Hardening
    No
  • RoHS Status
    Non-RoHS Compliant
  • Lead Free
    Contains Lead
Description
IRF9520 Overview
The maximum input capacitance of this device is 390pF @ 25V, because the input capacitance of an op amp is defined as the difference between the input terminals with one input grounded.Continuous drain current (ID) is the maximum continuous current (ID) the device can conduct, and it is 6.8A.When VGS=-100V, and ID flows to VDS at -100VVDS, the drain-source breakdown voltage is -100V in this device.Before drain current conduction can begin, the device's turn-off delay time must be charged up to full capacitance. This value is 21 ns.MOSFETs exhibit Drain-to-Source Resistance when a specific gate-to-source voltage (VGS) is applied to bias them into the on state, and this device's resistance is 600mOhm.During device turn-on, the input capacitance must be charged for a period of time before drain current conduction can begin, so its delay time is 9.6 ns seconds.Single MOSFETs transistor is the voltage across the gate-source terminal of a transistor that determines the gate-source voltage, VGS.The drain-to-source voltage (Vdss) of this transistor needs to be at 100V in order to operate.Using drive voltage (10V), this device helps reduce its power consumption.

IRF9520 Features
a continuous drain current (ID) of 6.8A
a drain-to-source breakdown voltage of -100V voltage
the turn-off delay time is 21 ns
single MOSFETs transistor is 600mOhm
a 100V drain to source voltage (Vdss)


IRF9520 Applications
There are a lot of Vishay Siliconix
IRF9520 applications of single MOSFETs transistors.


Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
IRF9520 More Descriptions
Trans MOSFET P-CH 100V 6.8A 3-Pin(3 Tab) TO-220AB
MOSFET P-CHANNEL 100V
French Electronic Distributor since 1988
Product Comparison
The three parts on the right have similar specifications to IRF9520.
  • Image
    Part Number
    Manufacturer
    Mount
    Mounting Type
    Package / Case
    Number of Pins
    Supplier Device Package
    Weight
    Operating Temperature
    Packaging
    Published
    Part Status
    Moisture Sensitivity Level (MSL)
    Resistance
    Max Operating Temperature
    Min Operating Temperature
    Technology
    Number of Elements
    Number of Channels
    Power Dissipation-Max
    Element Configuration
    Power Dissipation
    Turn On Delay Time
    FET Type
    Rds On (Max) @ Id, Vgs
    Vgs(th) (Max) @ Id
    Input Capacitance (Ciss) (Max) @ Vds
    Current - Continuous Drain (Id) @ 25°C
    Gate Charge (Qg) (Max) @ Vgs
    Rise Time
    Drain to Source Voltage (Vdss)
    Drive Voltage (Max Rds On,Min Rds On)
    Vgs (Max)
    Fall Time (Typ)
    Turn-Off Delay Time
    Continuous Drain Current (ID)
    Gate to Source Voltage (Vgs)
    Drain to Source Breakdown Voltage
    Input Capacitance
    Drain to Source Resistance
    Rds On Max
    Height
    Length
    Width
    Radiation Hardening
    RoHS Status
    Lead Free
    Max Power Dissipation
    Factory Lead Time
    Transistor Element Material
    Series
    JESD-609 Code
    Number of Terminations
    ECCN Code
    Terminal Finish
    Subcategory
    Terminal Position
    JESD-30 Code
    Configuration
    Operating Mode
    Case Connection
    Transistor Application
    Drain-source On Resistance-Max
    View Compare
  • IRF9520
    IRF9520
    Through Hole
    Through Hole
    TO-220-3
    3
    TO-220AB
    6.000006g
    -55°C~175°C TJ
    Tube
    2011
    Obsolete
    1 (Unlimited)
    600mOhm
    175°C
    -55°C
    MOSFET (Metal Oxide)
    1
    1
    60W Tc
    Single
    60W
    9.6 ns
    P-Channel
    600mOhm @ 4.1A, 10V
    4V @ 250μA
    390pF @ 25V
    6.8A Tc
    18nC @ 10V
    29ns
    100V
    10V
    ±20V
    25 ns
    21 ns
    6.8A
    20V
    -100V
    390pF
    600mOhm
    600 mΩ
    9.01mm
    10.41mm
    4.7mm
    No
    Non-RoHS Compliant
    Contains Lead
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • IRF9530L
    Through Hole
    Through Hole
    TO-262-3 Long Leads, I2Pak, TO-262AA
    -
    -
    -
    -55°C~175°C TJ
    Tube
    2016
    Active
    1 (Unlimited)
    -
    -
    -
    MOSFET (Metal Oxide)
    -
    -
    -
    -
    -
    -
    P-Channel
    300m Ω @ 7.2A, 10V
    4V @ 250μA
    860pF @ 25V
    12A Tc
    38nC @ 10V
    -
    100V
    10V
    ±20V
    -
    -
    12A
    -
    -
    -
    -
    -
    -
    -
    -
    -
    Non-RoHS Compliant
    -
    3.7W
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • IRF9540L
    Through Hole
    Through Hole
    TO-262-3 Long Leads, I2Pak, TO-262AA
    -
    I2PAK
    -
    -55°C~175°C TJ
    Tube
    2016
    Active
    1 (Unlimited)
    -
    -
    -
    MOSFET (Metal Oxide)
    -
    -
    -
    -
    -
    -
    P-Channel
    200mOhm @ 11A, 10V
    4V @ 250μA
    1400pF @ 25V
    19A Tc
    61nC @ 10V
    -
    100V
    10V
    ±20V
    -
    -
    19A
    -
    -
    1.4nF
    -
    200 mΩ
    -
    -
    -
    -
    Non-RoHS Compliant
    -
    3.7W
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • IRF9383MTRPBF
    Surface Mount
    Surface Mount
    DirectFET™ Isometric MX
    7
    -
    -
    -40°C~150°C TJ
    Tape & Reel (TR)
    2011
    Active
    1 (Unlimited)
    -
    -
    -
    MOSFET (Metal Oxide)
    1
    -
    2.1W Ta 113W Tc
    -
    2.1W
    29 ns
    P-Channel
    2.9m Ω @ 22A, 10V
    2.4V @ 150μA
    7305pF @ 15V
    22A Ta 160A Tc
    130nC @ 10V
    160ns
    30V
    4.5V 10V
    ±20V
    110 ns
    115 ns
    22A
    20V
    -30V
    -
    -
    -
    -
    -
    -
    No
    ROHS3 Compliant
    Lead Free
    -
    12 Weeks
    SILICON
    HEXFET®
    e3
    3
    EAR99
    Matte Tin (Sn)
    Other Transistors
    BOTTOM
    R-XBCC-N3
    SINGLE WITH BUILT-IN DIODE
    ENHANCEMENT MODE
    DRAIN
    SWITCHING
    0.0029Ohm
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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