Vishay Siliconix IRF9510
- Part Number:
- IRF9510
- Manufacturer:
- Vishay Siliconix
- Ventron No:
- 2488221-IRF9510
- Description:
- MOSFET P-CH 100V 4A TO-220AB
- Datasheet:
- IRF9510
Vishay Siliconix IRF9510 technical specifications, attributes, parameters and parts with similar specifications to Vishay Siliconix IRF9510.
- Mounting TypeThrough Hole
- Package / CaseTO-220-3
- Surface MountNO
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~175°C TJ
- PackagingTube
- JESD-609 Codee0
- Pbfree Codeno
- Part StatusObsolete
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- Terminal FinishTIN LEAD
- TechnologyMOSFET (Metal Oxide)
- Terminal PositionSINGLE
- Peak Reflow Temperature (Cel)NOT SPECIFIED
- Reach Compliance Codeunknown
- Time@Peak Reflow Temperature-Max (s)NOT SPECIFIED
- JESD-30 CodeR-PSFM-T3
- Qualification StatusCOMMERCIAL
- Number of Elements1
- ConfigurationSINGLE WITH BUILT-IN DIODE
- Power Dissipation-Max43W Tc
- Operating ModeENHANCEMENT MODE
- Case ConnectionDRAIN
- FET TypeP-Channel
- Transistor ApplicationSWITCHING
- Rds On (Max) @ Id, Vgs1.2 Ω @ 2.4A, 10V
- Vgs(th) (Max) @ Id4V @ 250μA
- Input Capacitance (Ciss) (Max) @ Vds200pF @ 25V
- Current - Continuous Drain (Id) @ 25°C4A Tc
- Gate Charge (Qg) (Max) @ Vgs8.7nC @ 10V
- Drain to Source Voltage (Vdss)100V
- Drive Voltage (Max Rds On,Min Rds On)10V
- Vgs (Max)±20V
- JEDEC-95 CodeTO-220AB
- Drain Current-Max (Abs) (ID)3A
- Pulsed Drain Current-Max (IDM)12A
- DS Breakdown Voltage-Min100V
- Avalanche Energy Rating (Eas)190 mJ
- RoHS StatusNon-RoHS Compliant
IRF9510 Overview
The MOSFET's breakdown is called "avalanche break down", and the avalanche energy applied to transistor is rated as 190 mJ (Eas).An op amp's input capacitance is defined as the capacitance between both of its input terminals with either input grounded, and 200pF @ 25V is its maximum input capacitance.Drain current refers to the maximum continuous current a device can conduct, and it is 3A.Peak drain current is 12A, which is the maximum pulsed drain current.Normal operation requires that the DS breakdown voltage remain above 100V.For this transistor to work, a voltage 100V is required between drain and source (Vdss).Using drive voltage (10V), this device contributes to a reduction in overall power consumption.
IRF9510 Features
the avalanche energy rating (Eas) is 190 mJ
based on its rated peak drain current 12A.
a 100V drain to source voltage (Vdss)
IRF9510 Applications
There are a lot of Rochester Electronics, LLC
IRF9510 applications of single MOSFETs transistors.
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
The MOSFET's breakdown is called "avalanche break down", and the avalanche energy applied to transistor is rated as 190 mJ (Eas).An op amp's input capacitance is defined as the capacitance between both of its input terminals with either input grounded, and 200pF @ 25V is its maximum input capacitance.Drain current refers to the maximum continuous current a device can conduct, and it is 3A.Peak drain current is 12A, which is the maximum pulsed drain current.Normal operation requires that the DS breakdown voltage remain above 100V.For this transistor to work, a voltage 100V is required between drain and source (Vdss).Using drive voltage (10V), this device contributes to a reduction in overall power consumption.
IRF9510 Features
the avalanche energy rating (Eas) is 190 mJ
based on its rated peak drain current 12A.
a 100V drain to source voltage (Vdss)
IRF9510 Applications
There are a lot of Rochester Electronics, LLC
IRF9510 applications of single MOSFETs transistors.
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
IRF9510 More Descriptions
MOSFET P-CH 100V 4A TO-220AB
MOSFET P-CHANNEL 100V
IC OPAMP GP 1 CIRCUIT 8DIP
MOSFET P-CHANNEL 100V
IC OPAMP GP 1 CIRCUIT 8DIP
The three parts on the right have similar specifications to IRF9510.
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ImagePart NumberManufacturerMounting TypePackage / CaseSurface MountTransistor Element MaterialOperating TemperaturePackagingJESD-609 CodePbfree CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsTerminal FinishTechnologyTerminal PositionPeak Reflow Temperature (Cel)Reach Compliance CodeTime@Peak Reflow Temperature-Max (s)JESD-30 CodeQualification StatusNumber of ElementsConfigurationPower Dissipation-MaxOperating ModeCase ConnectionFET TypeTransistor ApplicationRds On (Max) @ Id, VgsVgs(th) (Max) @ IdInput Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25°CGate Charge (Qg) (Max) @ VgsDrain to Source Voltage (Vdss)Drive Voltage (Max Rds On,Min Rds On)Vgs (Max)JEDEC-95 CodeDrain Current-Max (Abs) (ID)Pulsed Drain Current-Max (IDM)DS Breakdown Voltage-MinAvalanche Energy Rating (Eas)RoHS StatusMountSupplier Device PackagePublishedMax Power DissipationContinuous Drain Current (ID)Input CapacitanceRds On MaxFactory Lead TimeNumber of PinsSeriesECCN CodeSubcategoryPower DissipationTurn On Delay TimeRise TimeFall Time (Typ)Turn-Off Delay TimeGate to Source Voltage (Vgs)Drain-source On Resistance-MaxDrain to Source Breakdown VoltageRadiation HardeningLead FreeWeightMax Operating TemperatureMin Operating TemperatureVoltage - Rated DCCurrent RatingNumber of ChannelsElement ConfigurationDrain to Source ResistanceHeightLengthWidthView Compare
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IRF9510Through HoleTO-220-3NOSILICON-55°C~175°C TJTubee0noObsolete1 (Unlimited)3TIN LEADMOSFET (Metal Oxide)SINGLENOT SPECIFIEDunknownNOT SPECIFIEDR-PSFM-T3COMMERCIAL1SINGLE WITH BUILT-IN DIODE43W TcENHANCEMENT MODEDRAINP-ChannelSWITCHING1.2 Ω @ 2.4A, 10V4V @ 250μA200pF @ 25V4A Tc8.7nC @ 10V100V10V±20VTO-220AB3A12A100V190 mJNon-RoHS Compliant----------------------------------
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Through HoleTO-262-3 Long Leads, I2Pak, TO-262AA---55°C~175°C TJTube--Active1 (Unlimited)--MOSFET (Metal Oxide)-----------P-Channel-200mOhm @ 11A, 10V4V @ 250μA1400pF @ 25V19A Tc61nC @ 10V100V10V±20V-----Non-RoHS CompliantThrough HoleI2PAK20163.7W19A1.4nF200 mΩ--------------------------
-
Surface MountDirectFET™ Isometric MX-SILICON-40°C~150°C TJTape & Reel (TR)e3-Active1 (Unlimited)3Matte Tin (Sn)MOSFET (Metal Oxide)BOTTOM---R-XBCC-N3-1SINGLE WITH BUILT-IN DIODE2.1W Ta 113W TcENHANCEMENT MODEDRAINP-ChannelSWITCHING2.9m Ω @ 22A, 10V2.4V @ 150μA7305pF @ 15V22A Ta 160A Tc130nC @ 10V30V4.5V 10V±20V-----ROHS3 CompliantSurface Mount-2011-22A--12 Weeks7HEXFET®EAR99Other Transistors2.1W29 ns160ns110 ns115 ns20V0.0029Ohm-30VNoLead Free-----------
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Surface MountTO-263-3, D2Pak (2 Leads Tab), TO-263AB---55°C~175°C TJTube--Obsolete1 (Unlimited)--MOSFET (Metal Oxide)--------3.7W Ta 43W Tc--P-Channel-1.2Ohm @ 2.4A, 10V4V @ 250μA200pF @ 25V4A Tc8.7nC @ 10V100V10V±20V-----Non-RoHS CompliantSurface MountD2PAK2016-4A200pF1.2 Ω-----43W10 ns27ns17 ns15 ns20V--100V-Contains Lead1.437803g175°C-55°C-100V-4A1Single1.2Ohm4.83mm10.41mm9.65mm
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