IRF9510

Vishay Siliconix IRF9510

Part Number:
IRF9510
Manufacturer:
Vishay Siliconix
Ventron No:
2488221-IRF9510
Description:
MOSFET P-CH 100V 4A TO-220AB
ECAD Model:
Datasheet:
IRF9510

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Specifications
Vishay Siliconix IRF9510 technical specifications, attributes, parameters and parts with similar specifications to Vishay Siliconix IRF9510.
  • Mounting Type
    Through Hole
  • Package / Case
    TO-220-3
  • Surface Mount
    NO
  • Transistor Element Material
    SILICON
  • Operating Temperature
    -55°C~175°C TJ
  • Packaging
    Tube
  • JESD-609 Code
    e0
  • Pbfree Code
    no
  • Part Status
    Obsolete
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    3
  • Terminal Finish
    TIN LEAD
  • Technology
    MOSFET (Metal Oxide)
  • Terminal Position
    SINGLE
  • Peak Reflow Temperature (Cel)
    NOT SPECIFIED
  • Reach Compliance Code
    unknown
  • Time@Peak Reflow Temperature-Max (s)
    NOT SPECIFIED
  • JESD-30 Code
    R-PSFM-T3
  • Qualification Status
    COMMERCIAL
  • Number of Elements
    1
  • Configuration
    SINGLE WITH BUILT-IN DIODE
  • Power Dissipation-Max
    43W Tc
  • Operating Mode
    ENHANCEMENT MODE
  • Case Connection
    DRAIN
  • FET Type
    P-Channel
  • Transistor Application
    SWITCHING
  • Rds On (Max) @ Id, Vgs
    1.2 Ω @ 2.4A, 10V
  • Vgs(th) (Max) @ Id
    4V @ 250μA
  • Input Capacitance (Ciss) (Max) @ Vds
    200pF @ 25V
  • Current - Continuous Drain (Id) @ 25°C
    4A Tc
  • Gate Charge (Qg) (Max) @ Vgs
    8.7nC @ 10V
  • Drain to Source Voltage (Vdss)
    100V
  • Drive Voltage (Max Rds On,Min Rds On)
    10V
  • Vgs (Max)
    ±20V
  • JEDEC-95 Code
    TO-220AB
  • Drain Current-Max (Abs) (ID)
    3A
  • Pulsed Drain Current-Max (IDM)
    12A
  • DS Breakdown Voltage-Min
    100V
  • Avalanche Energy Rating (Eas)
    190 mJ
  • RoHS Status
    Non-RoHS Compliant
Description
IRF9510 Overview
The MOSFET's breakdown is called "avalanche break down", and the avalanche energy applied to transistor is rated as 190 mJ (Eas).An op amp's input capacitance is defined as the capacitance between both of its input terminals with either input grounded, and 200pF @ 25V is its maximum input capacitance.Drain current refers to the maximum continuous current a device can conduct, and it is 3A.Peak drain current is 12A, which is the maximum pulsed drain current.Normal operation requires that the DS breakdown voltage remain above 100V.For this transistor to work, a voltage 100V is required between drain and source (Vdss).Using drive voltage (10V), this device contributes to a reduction in overall power consumption.

IRF9510 Features
the avalanche energy rating (Eas) is 190 mJ
based on its rated peak drain current 12A.
a 100V drain to source voltage (Vdss)


IRF9510 Applications
There are a lot of Rochester Electronics, LLC
IRF9510 applications of single MOSFETs transistors.


AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
IRF9510 More Descriptions
MOSFET P-CH 100V 4A TO-220AB
MOSFET P-CHANNEL 100V
IC OPAMP GP 1 CIRCUIT 8DIP
Product Comparison
The three parts on the right have similar specifications to IRF9510.
  • Image
    Part Number
    Manufacturer
    Mounting Type
    Package / Case
    Surface Mount
    Transistor Element Material
    Operating Temperature
    Packaging
    JESD-609 Code
    Pbfree Code
    Part Status
    Moisture Sensitivity Level (MSL)
    Number of Terminations
    Terminal Finish
    Technology
    Terminal Position
    Peak Reflow Temperature (Cel)
    Reach Compliance Code
    Time@Peak Reflow Temperature-Max (s)
    JESD-30 Code
    Qualification Status
    Number of Elements
    Configuration
    Power Dissipation-Max
    Operating Mode
    Case Connection
    FET Type
    Transistor Application
    Rds On (Max) @ Id, Vgs
    Vgs(th) (Max) @ Id
    Input Capacitance (Ciss) (Max) @ Vds
    Current - Continuous Drain (Id) @ 25°C
    Gate Charge (Qg) (Max) @ Vgs
    Drain to Source Voltage (Vdss)
    Drive Voltage (Max Rds On,Min Rds On)
    Vgs (Max)
    JEDEC-95 Code
    Drain Current-Max (Abs) (ID)
    Pulsed Drain Current-Max (IDM)
    DS Breakdown Voltage-Min
    Avalanche Energy Rating (Eas)
    RoHS Status
    Mount
    Supplier Device Package
    Published
    Max Power Dissipation
    Continuous Drain Current (ID)
    Input Capacitance
    Rds On Max
    Factory Lead Time
    Number of Pins
    Series
    ECCN Code
    Subcategory
    Power Dissipation
    Turn On Delay Time
    Rise Time
    Fall Time (Typ)
    Turn-Off Delay Time
    Gate to Source Voltage (Vgs)
    Drain-source On Resistance-Max
    Drain to Source Breakdown Voltage
    Radiation Hardening
    Lead Free
    Weight
    Max Operating Temperature
    Min Operating Temperature
    Voltage - Rated DC
    Current Rating
    Number of Channels
    Element Configuration
    Drain to Source Resistance
    Height
    Length
    Width
    View Compare
  • IRF9510
    IRF9510
    Through Hole
    TO-220-3
    NO
    SILICON
    -55°C~175°C TJ
    Tube
    e0
    no
    Obsolete
    1 (Unlimited)
    3
    TIN LEAD
    MOSFET (Metal Oxide)
    SINGLE
    NOT SPECIFIED
    unknown
    NOT SPECIFIED
    R-PSFM-T3
    COMMERCIAL
    1
    SINGLE WITH BUILT-IN DIODE
    43W Tc
    ENHANCEMENT MODE
    DRAIN
    P-Channel
    SWITCHING
    1.2 Ω @ 2.4A, 10V
    4V @ 250μA
    200pF @ 25V
    4A Tc
    8.7nC @ 10V
    100V
    10V
    ±20V
    TO-220AB
    3A
    12A
    100V
    190 mJ
    Non-RoHS Compliant
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • IRF9540L
    Through Hole
    TO-262-3 Long Leads, I2Pak, TO-262AA
    -
    -
    -55°C~175°C TJ
    Tube
    -
    -
    Active
    1 (Unlimited)
    -
    -
    MOSFET (Metal Oxide)
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    P-Channel
    -
    200mOhm @ 11A, 10V
    4V @ 250μA
    1400pF @ 25V
    19A Tc
    61nC @ 10V
    100V
    10V
    ±20V
    -
    -
    -
    -
    -
    Non-RoHS Compliant
    Through Hole
    I2PAK
    2016
    3.7W
    19A
    1.4nF
    200 mΩ
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • IRF9383MTRPBF
    Surface Mount
    DirectFET™ Isometric MX
    -
    SILICON
    -40°C~150°C TJ
    Tape & Reel (TR)
    e3
    -
    Active
    1 (Unlimited)
    3
    Matte Tin (Sn)
    MOSFET (Metal Oxide)
    BOTTOM
    -
    -
    -
    R-XBCC-N3
    -
    1
    SINGLE WITH BUILT-IN DIODE
    2.1W Ta 113W Tc
    ENHANCEMENT MODE
    DRAIN
    P-Channel
    SWITCHING
    2.9m Ω @ 22A, 10V
    2.4V @ 150μA
    7305pF @ 15V
    22A Ta 160A Tc
    130nC @ 10V
    30V
    4.5V 10V
    ±20V
    -
    -
    -
    -
    -
    ROHS3 Compliant
    Surface Mount
    -
    2011
    -
    22A
    -
    -
    12 Weeks
    7
    HEXFET®
    EAR99
    Other Transistors
    2.1W
    29 ns
    160ns
    110 ns
    115 ns
    20V
    0.0029Ohm
    -30V
    No
    Lead Free
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • IRF9510S
    Surface Mount
    TO-263-3, D2Pak (2 Leads Tab), TO-263AB
    -
    -
    -55°C~175°C TJ
    Tube
    -
    -
    Obsolete
    1 (Unlimited)
    -
    -
    MOSFET (Metal Oxide)
    -
    -
    -
    -
    -
    -
    -
    -
    3.7W Ta 43W Tc
    -
    -
    P-Channel
    -
    1.2Ohm @ 2.4A, 10V
    4V @ 250μA
    200pF @ 25V
    4A Tc
    8.7nC @ 10V
    100V
    10V
    ±20V
    -
    -
    -
    -
    -
    Non-RoHS Compliant
    Surface Mount
    D2PAK
    2016
    -
    4A
    200pF
    1.2 Ω
    -
    -
    -
    -
    -
    43W
    10 ns
    27ns
    17 ns
    15 ns
    20V
    -
    -100V
    -
    Contains Lead
    1.437803g
    175°C
    -55°C
    -100V
    -4A
    1
    Single
    1.2Ohm
    4.83mm
    10.41mm
    9.65mm
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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