Infineon Technologies IRF9410PBF
- Part Number:
- IRF9410PBF
- Manufacturer:
- Infineon Technologies
- Ventron No:
- 2493068-IRF9410PBF
- Description:
- MOSFET N-CH 30V 7A 8-SOIC
- ECAD Model:
-
- Datasheet:
- IRF9410PBF
Infineon Technologies IRF9410PBF technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies IRF9410PBF.
- Mounting TypeSurface Mount
- Package / Case8-SOIC (0.154, 3.90mm Width)
- Surface MountYES
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~150°C TJ
- PackagingTube
- SeriesHEXFET®
- Published1997
- JESD-609 Codee3
- Part StatusDiscontinued
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations8
- ECCN CodeEAR99
- Terminal FinishMatte Tin (Sn)
- Additional FeatureAVALANCHE RATED, ULTRA LOW RESISTANCE
- HTS Code8541.29.00.95
- TechnologyMOSFET (Metal Oxide)
- Terminal PositionDUAL
- Terminal FormGULL WING
- Peak Reflow Temperature (Cel)NOT SPECIFIED
- Time@Peak Reflow Temperature-Max (s)NOT SPECIFIED
- JESD-30 CodeR-PDSO-G8
- Number of Elements1
- ConfigurationSINGLE WITH BUILT-IN DIODE
- Power Dissipation-Max2.5W Ta
- Operating ModeENHANCEMENT MODE
- FET TypeN-Channel
- Transistor ApplicationSWITCHING
- Rds On (Max) @ Id, Vgs30m Ω @ 7A, 10V
- Vgs(th) (Max) @ Id1V @ 250μA
- Input Capacitance (Ciss) (Max) @ Vds550pF @ 25V
- Current - Continuous Drain (Id) @ 25°C7A Ta
- Gate Charge (Qg) (Max) @ Vgs27nC @ 10V
- Drain to Source Voltage (Vdss)30V
- Drive Voltage (Max Rds On,Min Rds On)4.5V 10V
- Vgs (Max)±20V
- JEDEC-95 CodeMS-012AA
- Drain Current-Max (Abs) (ID)7A
- Drain-source On Resistance-Max0.03Ohm
- Pulsed Drain Current-Max (IDM)37A
- DS Breakdown Voltage-Min30V
- Avalanche Energy Rating (Eas)70 mJ
- RoHS StatusROHS3 Compliant
IRF9410PBF Description
IRF9410PBF is an N-channel Power MOSFET transistor from the manufacturer Infineon Technologies with a drain to source voltage of 30V. The operating temperature of the IRF9410PBF is -55??C~150??C TJ and its maximum power dissipation is 2.5W Ta. IRF9410PBF has 8 pins and it is available in Tube packaging way.
IRF9410PBF Features
Drain Current-Max (Abs) (ID): 7A
Pulsed Drain Current-Max (IDM): 37A
Avalanche Energy Rating (Eas): 70 mJ
Drain to Source Voltage (Vdss): 30V
IRF9410PBF Applications
Power Management
Consumer Electronics
Portable Devices
Industrial
IRF9410PBF is an N-channel Power MOSFET transistor from the manufacturer Infineon Technologies with a drain to source voltage of 30V. The operating temperature of the IRF9410PBF is -55??C~150??C TJ and its maximum power dissipation is 2.5W Ta. IRF9410PBF has 8 pins and it is available in Tube packaging way.
IRF9410PBF Features
Drain Current-Max (Abs) (ID): 7A
Pulsed Drain Current-Max (IDM): 37A
Avalanche Energy Rating (Eas): 70 mJ
Drain to Source Voltage (Vdss): 30V
IRF9410PBF Applications
Power Management
Consumer Electronics
Portable Devices
Industrial
IRF9410PBF More Descriptions
Trans MOSFET N-CH Si 30V 7A 8-Pin SOIC Tube / MOSFET N-CH 30V 7A 8-SOIC
Benefits: RoHS Compliant; Low RDS(on); Industry-leading quality; Dynamic dv/dt Rating; Fast Switching; Fully Avalanche Rated; 175C Operating Temperature
MOSFET; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:30V; Continuous Drain Current, Id:7A; On Resistance, Rds(on):30mohm; Rds(on) Test Voltage, Vgs:10V; Package/Case:8-SOIC ;RoHS Compliant: Yes
MOSFET, N, LOGIC, SO-8; Transistor Polarity:N Channel; Continuous Drain Current Id:7A; Drain Source Voltage Vds:30V; On Resistance Rds(on):30mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:1V; Power Dissipation Pd:2.5W; Transistor Case Style:SOIC; No. of Pins:8; SVHC:No SVHC (20-Jun-2011); Current Id Max:7A; Current Temperature:25°C; External Depth:5.2mm; External Length / Height:1.75mm; External Width:4.05mm; Full Power Rating Temperature:25°C; Junction Temperature Tj Min:-55°C; No. of Transistors:1; Package / Case:SOIC; Pin Configuration:a; Pin Format:1 NC; 2 S; 3 S; 4 G; 5 D; 6 D; 7 D; 8 D; Power Dissipation Pd:2.5W; Power Dissipation Pd:2.5W; Pulse Current Idm:37A; Row Pitch:6.3mm; SMD Marking:F9410; Termination Type:SMD; Voltage Vds Typ:30V; Voltage Vgs Max:1V; Voltage Vgs Rds on Measurement:10V
Benefits: RoHS Compliant; Low RDS(on); Industry-leading quality; Dynamic dv/dt Rating; Fast Switching; Fully Avalanche Rated; 175C Operating Temperature
MOSFET; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:30V; Continuous Drain Current, Id:7A; On Resistance, Rds(on):30mohm; Rds(on) Test Voltage, Vgs:10V; Package/Case:8-SOIC ;RoHS Compliant: Yes
MOSFET, N, LOGIC, SO-8; Transistor Polarity:N Channel; Continuous Drain Current Id:7A; Drain Source Voltage Vds:30V; On Resistance Rds(on):30mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:1V; Power Dissipation Pd:2.5W; Transistor Case Style:SOIC; No. of Pins:8; SVHC:No SVHC (20-Jun-2011); Current Id Max:7A; Current Temperature:25°C; External Depth:5.2mm; External Length / Height:1.75mm; External Width:4.05mm; Full Power Rating Temperature:25°C; Junction Temperature Tj Min:-55°C; No. of Transistors:1; Package / Case:SOIC; Pin Configuration:a; Pin Format:1 NC; 2 S; 3 S; 4 G; 5 D; 6 D; 7 D; 8 D; Power Dissipation Pd:2.5W; Power Dissipation Pd:2.5W; Pulse Current Idm:37A; Row Pitch:6.3mm; SMD Marking:F9410; Termination Type:SMD; Voltage Vds Typ:30V; Voltage Vgs Max:1V; Voltage Vgs Rds on Measurement:10V
The three parts on the right have similar specifications to IRF9410PBF.
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ImagePart NumberManufacturerMounting TypePackage / CaseSurface MountTransistor Element MaterialOperating TemperaturePackagingSeriesPublishedJESD-609 CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeTerminal FinishAdditional FeatureHTS CodeTechnologyTerminal PositionTerminal FormPeak Reflow Temperature (Cel)Time@Peak Reflow Temperature-Max (s)JESD-30 CodeNumber of ElementsConfigurationPower Dissipation-MaxOperating ModeFET TypeTransistor ApplicationRds On (Max) @ Id, VgsVgs(th) (Max) @ IdInput Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25°CGate Charge (Qg) (Max) @ VgsDrain to Source Voltage (Vdss)Drive Voltage (Max Rds On,Min Rds On)Vgs (Max)JEDEC-95 CodeDrain Current-Max (Abs) (ID)Drain-source On Resistance-MaxPulsed Drain Current-Max (IDM)DS Breakdown Voltage-MinAvalanche Energy Rating (Eas)RoHS StatusQualification StatusMountSupplier Device PackageMax Power DissipationContinuous Drain Current (ID)Input CapacitanceRds On MaxWeightMax Operating TemperatureMin Operating TemperatureVoltage - Rated DCCurrent RatingNumber of ChannelsElement ConfigurationPower DissipationTurn On Delay TimeRise TimeFall Time (Typ)Turn-Off Delay TimeGate to Source Voltage (Vgs)Drain to Source Breakdown VoltageDrain to Source ResistanceHeightLengthWidthLead FreeView Compare
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IRF9410PBFSurface Mount8-SOIC (0.154, 3.90mm Width)YESSILICON-55°C~150°C TJTubeHEXFET®1997e3Discontinued1 (Unlimited)8EAR99Matte Tin (Sn)AVALANCHE RATED, ULTRA LOW RESISTANCE8541.29.00.95MOSFET (Metal Oxide)DUALGULL WINGNOT SPECIFIEDNOT SPECIFIEDR-PDSO-G81SINGLE WITH BUILT-IN DIODE2.5W TaENHANCEMENT MODEN-ChannelSWITCHING30m Ω @ 7A, 10V1V @ 250μA550pF @ 25V7A Ta27nC @ 10V30V4.5V 10V±20VMS-012AA7A0.03Ohm37A30V70 mJROHS3 Compliant--------------------------- -
Surface Mount8-SOIC (0.154, 3.90mm Width)YESSILICON-55°C~150°C TJTubeHEXFET®1997-Obsolete1 (Unlimited)8EAR99NOT SPECIFIEDHIGH RELIABILITY-MOSFET (Metal Oxide)DUALGULL WINGNOT SPECIFIEDNOT SPECIFIEDR-PDSO-G81SINGLE WITH BUILT-IN DIODE2.5W TaENHANCEMENT MODEN-ChannelSWITCHING30m Ω @ 7A, 10V1V @ 250μA550pF @ 25V7A Ta27nC @ 10V30V4.5V 10V±20VMS-012AA7A0.03Ohm37A30V70 mJNon-RoHS CompliantNot Qualified-------------------------
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Through HoleTO-262-3 Long Leads, I2Pak, TO-262AA---55°C~175°C TJTube-2016-Active1 (Unlimited)-----MOSFET (Metal Oxide)---------P-Channel-200mOhm @ 11A, 10V4V @ 250μA1400pF @ 25V19A Tc61nC @ 10V100V10V±20V------Non-RoHS Compliant-Through HoleI2PAK3.7W19A1.4nF200 mΩ-------------------
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Surface MountTO-263-3, D2Pak (2 Leads Tab), TO-263AB---55°C~175°C TJTube-2016-Obsolete1 (Unlimited)-----MOSFET (Metal Oxide)-------3.7W Ta 43W Tc-P-Channel-1.2Ohm @ 2.4A, 10V4V @ 250μA200pF @ 25V4A Tc8.7nC @ 10V100V10V±20V------Non-RoHS Compliant-Surface MountD2PAK-4A200pF1.2 Ω1.437803g175°C-55°C-100V-4A1Single43W10 ns27ns17 ns15 ns20V-100V1.2Ohm4.83mm10.41mm9.65mmContains Lead
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