Infineon Technologies IRF8734TRPBF
- Part Number:
- IRF8734TRPBF
- Manufacturer:
- Infineon Technologies
- Ventron No:
- 3585974-IRF8734TRPBF
- Description:
- MOSFET N-CH 30V 21A 8-SOIC
- ECAD Model:
-
- Datasheet:
- IRF8734TRPBF
Infineon Technologies IRF8734TRPBF technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies IRF8734TRPBF.
- Factory Lead Time12 Weeks
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / Case8-SOIC (0.154, 3.90mm Width)
- Number of Pins8
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~150°C TJ
- PackagingTape & Reel (TR)
- SeriesHEXFET®
- Published2009
- JESD-609 Codee3
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations8
- ECCN CodeEAR99
- Resistance3.5MOhm
- Terminal FinishMatte Tin (Sn)
- SubcategoryFET General Purpose Power
- TechnologyMOSFET (Metal Oxide)
- Terminal PositionDUAL
- Terminal FormGULL WING
- Number of Elements1
- ConfigurationSINGLE WITH BUILT-IN DIODE
- Power Dissipation-Max2.5W Ta
- Operating ModeENHANCEMENT MODE
- Power Dissipation2.5W
- Turn On Delay Time13 ns
- FET TypeN-Channel
- Transistor ApplicationSWITCHING
- Rds On (Max) @ Id, Vgs3.5m Ω @ 21A, 10V
- Vgs(th) (Max) @ Id2.35V @ 50μA
- Input Capacitance (Ciss) (Max) @ Vds3175pF @ 15V
- Current - Continuous Drain (Id) @ 25°C21A Ta
- Gate Charge (Qg) (Max) @ Vgs30nC @ 4.5V
- Rise Time16ns
- Drive Voltage (Max Rds On,Min Rds On)4.5V 10V
- Vgs (Max)±20V
- Fall Time (Typ)8 ns
- Turn-Off Delay Time15 ns
- Continuous Drain Current (ID)21A
- Gate to Source Voltage (Vgs)20V
- Drain to Source Breakdown Voltage30V
- Height1.4986mm
- Width3.9878mm
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
IRF8734TRPBF Features
Very Low RDS(on) at 4.5V VGS
Low Gate Charge
Fully Characterized Avalanche Voltage and Current
100% Tested for RG
Lead-Free
IRF8734TRPBF Applications Synchronous MOSFET for Notebook Processor Power Synchronous Rectifier MOSFET for Isolated DC-DC Converters in Networking Systems
IRF8734TRPBF Applications Synchronous MOSFET for Notebook Processor Power Synchronous Rectifier MOSFET for Isolated DC-DC Converters in Networking Systems
IRF8734TRPBF More Descriptions
Single N-Channel 30 V 3.5 mOhm 20 nC HEXFET® Power Mosfet - SOIC-8
Trans MOSFET N-CH 30V 21A 8-Pin SOIC T/R / MOSFET N-CH 30V 21A 8-SOIC
MOSFET, N-CH, 30V, 21A, SOIC; Transistor Polarity:N Channel; Continuous Drain Current Id:21A; Source Voltage Vds:30V; On Resistance
MOSFET, N-CH, 30V, 21A, SOIC; Transistor Polarity: N Channel; Continuous Drain Current Id: 21A; Drain Source Voltage Vds: 30V; On Resistance Rds(on): 0.0029ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 1.8V; Power Dissipation Pd: 2.5W; Transistor Case Style: SOIC; No. of Pins: 8Pins; Operating Temperature Max: 150°C; Product Range: HEXFET Series; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018)
Trans MOSFET N-CH 30V 21A 8-Pin SOIC T/R / MOSFET N-CH 30V 21A 8-SOIC
MOSFET, N-CH, 30V, 21A, SOIC; Transistor Polarity:N Channel; Continuous Drain Current Id:21A; Source Voltage Vds:30V; On Resistance
MOSFET, N-CH, 30V, 21A, SOIC; Transistor Polarity: N Channel; Continuous Drain Current Id: 21A; Drain Source Voltage Vds: 30V; On Resistance Rds(on): 0.0029ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 1.8V; Power Dissipation Pd: 2.5W; Transistor Case Style: SOIC; No. of Pins: 8Pins; Operating Temperature Max: 150°C; Product Range: HEXFET Series; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018)
The three parts on the right have similar specifications to IRF8734TRPBF.
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ImagePart NumberManufacturerFactory Lead TimeMountMounting TypePackage / CaseNumber of PinsTransistor Element MaterialOperating TemperaturePackagingSeriesPublishedJESD-609 CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeResistanceTerminal FinishSubcategoryTechnologyTerminal PositionTerminal FormNumber of ElementsConfigurationPower Dissipation-MaxOperating ModePower DissipationTurn On Delay TimeFET TypeTransistor ApplicationRds On (Max) @ Id, VgsVgs(th) (Max) @ IdInput Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25°CGate Charge (Qg) (Max) @ VgsRise TimeDrive Voltage (Max Rds On,Min Rds On)Vgs (Max)Fall Time (Typ)Turn-Off Delay TimeContinuous Drain Current (ID)Gate to Source Voltage (Vgs)Drain to Source Breakdown VoltageHeightWidthRadiation HardeningRoHS StatusLead FreeSupplier Device PackageMax Operating TemperatureMin Operating TemperatureDrain to Source Voltage (Vdss)Input CapacitanceDrain to Source ResistanceRds On MaxPeak Reflow Temperature (Cel)Reach Compliance CodeTime@Peak Reflow Temperature-Max (s)Pin CountJESD-30 CodeQualification StatusCase ConnectionDS Breakdown Voltage-MinVgs(th) (Max) @ Id:Technology:Supplier Device Package:Series:Rds On (Max) @ Id, Vgs:Power Dissipation (Max):Packaging:Package / Case:Operating Temperature:Mounting Type:Input Capacitance (Ciss) (Max) @ Vds:Gate Charge (Qg) (Max) @ Vgs:FET Type:FET Feature:Drain to Source Voltage (Vdss):Current - Continuous Drain (Id) @ 25°C:View Compare
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IRF8734TRPBF12 WeeksSurface MountSurface Mount8-SOIC (0.154, 3.90mm Width)8SILICON-55°C~150°C TJTape & Reel (TR)HEXFET®2009e3Active1 (Unlimited)8EAR993.5MOhmMatte Tin (Sn)FET General Purpose PowerMOSFET (Metal Oxide)DUALGULL WING1SINGLE WITH BUILT-IN DIODE2.5W TaENHANCEMENT MODE2.5W13 nsN-ChannelSWITCHING3.5m Ω @ 21A, 10V2.35V @ 50μA3175pF @ 15V21A Ta30nC @ 4.5V16ns4.5V 10V±20V8 ns15 ns21A20V30V1.4986mm3.9878mmNoROHS3 CompliantLead Free-------------------------------- -
-Surface MountSurface MountDirectFET™ Isometric MX7--40°C~150°C TJTape & Reel (TR)HEXFET®2013-Obsolete1 (Unlimited)-----MOSFET (Metal Oxide)--1-2.8W Ta 100W Tc-2.8W16 nsN-Channel-2.2mOhm @ 28A, 10V2.35V @ 100μA4700pF @ 15V28A Ta 170A Tc42nC @ 4.5V22ns4.5V 10V±20V13 ns19 ns170A20V30V--NoRoHS Compliant-DIRECTFET™ MX150°C-40°C30V4.7nF3.2mOhm2.2 mΩ------------------------
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-Surface MountSurface MountTO-263-3, D2Pak (2 Leads Tab), TO-263AB3SILICON-55°C~150°C TJTape & Reel (TR)-2016e0Obsolete1 (Unlimited)2--TIN LEADFET General Purpose PowerMOSFET (Metal Oxide)SINGLEGULL WING1SINGLE3.1W Ta 74W TcENHANCEMENT MODE--N-ChannelSWITCHING1.5 Ω @ 2.7A, 10V4V @ 250μA610pF @ 25V4.5A Tc38nC @ 10V-10V±20V--4.5A-----Non-RoHS Compliant----500V---NOT SPECIFIEDunknownNOT SPECIFIED4R-PSSO-G2Not QualifiedDRAIN500V----------------
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--------------------------------------------------------------4V @ 250µAMOSFET (Metal Oxide)TO-220AB-3 Ohm @ 1.5A, 10V50W (Tc)TubeTO-220-3-55°C ~ 150°C (TJ)Through Hole360pF @ 25V24nC @ 10VN-Channel-500V2.5A (Tc)
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