Vishay Siliconix IRF840A
- Part Number:
- IRF840A
- Manufacturer:
- Vishay Siliconix
- Ventron No:
- 2488277-IRF840A
- Description:
- MOSFET N-CH 500V 8A TO-220AB
- Datasheet:
- IRF840A
Vishay Siliconix IRF840A technical specifications, attributes, parameters and parts with similar specifications to Vishay Siliconix IRF840A.
- MountThrough Hole
- Mounting TypeThrough Hole
- Package / CaseTO-220-3
- Number of Pins3
- Supplier Device PackageTO-220AB
- Weight6.000006g
- Operating Temperature-55°C~150°C TJ
- PackagingTube
- Published2011
- Part StatusObsolete
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Max Operating Temperature150°C
- Min Operating Temperature-55°C
- Voltage - Rated DC500V
- TechnologyMOSFET (Metal Oxide)
- Current Rating8A
- Number of Elements1
- Number of Channels1
- Power Dissipation-Max125W Tc
- Element ConfigurationSingle
- Power Dissipation125W
- Turn On Delay Time11 ns
- FET TypeN-Channel
- Rds On (Max) @ Id, Vgs850mOhm @ 4.8A, 10V
- Vgs(th) (Max) @ Id4V @ 250μA
- Input Capacitance (Ciss) (Max) @ Vds1018pF @ 25V
- Current - Continuous Drain (Id) @ 25°C8A Tc
- Gate Charge (Qg) (Max) @ Vgs38nC @ 10V
- Rise Time23ns
- Drain to Source Voltage (Vdss)500V
- Drive Voltage (Max Rds On,Min Rds On)10V
- Vgs (Max)±30V
- Fall Time (Typ)19 ns
- Turn-Off Delay Time26 ns
- Continuous Drain Current (ID)8A
- Gate to Source Voltage (Vgs)30V
- Drain to Source Breakdown Voltage500V
- Input Capacitance1.018nF
- Drain to Source Resistance850mOhm
- Rds On Max850 mΩ
- Height9.01mm
- Length10.41mm
- Width4.7mm
- Radiation HardeningNo
- RoHS StatusNon-RoHS Compliant
- Lead FreeContains Lead
IRF840A Overview
Input capacitance, CI, is defined as the capacitance between two input terminals of an op amp with one input grounded, and the input capacitance of this device is 1018pF @ 25V.This device has a continuous drain current (ID) of [8A], which is its maximum continuous current.At a given drain-source breakdown voltage, a specified value of ID will flow. With VGS=500V, the drain-source breakdown voltage is 500V.The turn-off delay time of a device is the time it takes to charge its input capacitance before drain current can flow. The turn-off delay time of a device is 26 ns.MOSFETs have 850mOhm resistance between the drain and the source when biased into the on state by a gate-to-source voltage (VGS).During turn-on, the input capacitance of the device is charged before drain current conduction starts, so its delay time is 11 ns.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 30V volts.In order to operate this transistor, a voltage of 500V is needed from the drain to the source (Vdss).Its overall power consumption can be reduced by using drive voltage (10V).
IRF840A Features
a continuous drain current (ID) of 8A
a drain-to-source breakdown voltage of 500V voltage
the turn-off delay time is 26 ns
single MOSFETs transistor is 850mOhm
a 500V drain to source voltage (Vdss)
IRF840A Applications
There are a lot of Vishay Siliconix
IRF840A applications of single MOSFETs transistors.
Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Input capacitance, CI, is defined as the capacitance between two input terminals of an op amp with one input grounded, and the input capacitance of this device is 1018pF @ 25V.This device has a continuous drain current (ID) of [8A], which is its maximum continuous current.At a given drain-source breakdown voltage, a specified value of ID will flow. With VGS=500V, the drain-source breakdown voltage is 500V.The turn-off delay time of a device is the time it takes to charge its input capacitance before drain current can flow. The turn-off delay time of a device is 26 ns.MOSFETs have 850mOhm resistance between the drain and the source when biased into the on state by a gate-to-source voltage (VGS).During turn-on, the input capacitance of the device is charged before drain current conduction starts, so its delay time is 11 ns.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 30V volts.In order to operate this transistor, a voltage of 500V is needed from the drain to the source (Vdss).Its overall power consumption can be reduced by using drive voltage (10V).
IRF840A Features
a continuous drain current (ID) of 8A
a drain-to-source breakdown voltage of 500V voltage
the turn-off delay time is 26 ns
single MOSFETs transistor is 850mOhm
a 500V drain to source voltage (Vdss)
IRF840A Applications
There are a lot of Vishay Siliconix
IRF840A applications of single MOSFETs transistors.
Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
IRF840A More Descriptions
Power MOSFET(Vdss=500V, Rds(on)max=0.85ohm, Id=8.0A) | MOSFET N-CH 500V 8A TO-220AB
Trans MOSFET N-CH 500V 8A 3-Pin (3 Tab) TO-220AB
500 V (Min.); 8.0 A MOSF ET, Power; N-Channel; In ternational Rectifier De scription: MOSFET, Power; N-Channel; 0.85 Ohms (Ma x.); 500 V (Min.); 8.0 A (Max.); 62 degC Internat ional Rectifier Descript ion: MOSFET, Power; N-Cha nnel; 0.85 Ohms (Max.); 5 00 V (Min.); 8.0 A (Max.) ; 62 degC IRF840A
Trans MOSFET N-CH 500V 8A 3-Pin (3 Tab) TO-220AB
500 V (Min.); 8.0 A MOSF ET, Power; N-Channel; In ternational Rectifier De scription: MOSFET, Power; N-Channel; 0.85 Ohms (Ma x.); 500 V (Min.); 8.0 A (Max.); 62 degC Internat ional Rectifier Descript ion: MOSFET, Power; N-Cha nnel; 0.85 Ohms (Max.); 5 00 V (Min.); 8.0 A (Max.) ; 62 degC IRF840A
The three parts on the right have similar specifications to IRF840A.
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ImagePart NumberManufacturerMountMounting TypePackage / CaseNumber of PinsSupplier Device PackageWeightOperating TemperaturePackagingPublishedPart StatusMoisture Sensitivity Level (MSL)Max Operating TemperatureMin Operating TemperatureVoltage - Rated DCTechnologyCurrent RatingNumber of ElementsNumber of ChannelsPower Dissipation-MaxElement ConfigurationPower DissipationTurn On Delay TimeFET TypeRds On (Max) @ Id, VgsVgs(th) (Max) @ IdInput Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25°CGate Charge (Qg) (Max) @ VgsRise TimeDrain to Source Voltage (Vdss)Drive Voltage (Max Rds On,Min Rds On)Vgs (Max)Fall Time (Typ)Turn-Off Delay TimeContinuous Drain Current (ID)Gate to Source Voltage (Vgs)Drain to Source Breakdown VoltageInput CapacitanceDrain to Source ResistanceRds On MaxHeightLengthWidthRadiation HardeningRoHS StatusLead FreeView Compare
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IRF840AThrough HoleThrough HoleTO-220-33TO-220AB6.000006g-55°C~150°C TJTube2011Obsolete1 (Unlimited)150°C-55°C500VMOSFET (Metal Oxide)8A11125W TcSingle125W11 nsN-Channel850mOhm @ 4.8A, 10V4V @ 250μA1018pF @ 25V8A Tc38nC @ 10V23ns500V10V±30V19 ns26 ns8A30V500V1.018nF850mOhm850 mΩ9.01mm10.41mm4.7mmNoNon-RoHS CompliantContains Lead-
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Through HoleThrough HoleTO-262-3 Long Leads, I2Pak, TO-262AA-I2PAK2.387001g-55°C~150°C TJTube2016Obsolete1 (Unlimited)150°C-55°C500VMOSFET (Metal Oxide)8A-13.1W Ta 125W TcSingle-12 nsN-Channel850mOhm @ 4.8A, 10V4V @ 250μA1100pF @ 25V8A Tc39nC @ 10V25ns500V10V±30V19 ns27 ns8A30V500V1.1nF850mOhm850 mΩ9.65mm10.41mm4.7mm-Non-RoHS CompliantContains Lead
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Surface MountSurface MountTO-263-3, D2Pak (2 Leads Tab), TO-263AB3D2PAK1.437803g-55°C~150°C TJTape & Reel (TR)2016Obsolete1 (Unlimited)150°C-55°C-MOSFET (Metal Oxide)--13.1W Ta 125W TcSingle-11 nsN-Channel850mOhm @ 4.8A, 10V4V @ 250μA1018pF @ 25V8A Tc38nC @ 10V23ns500V10V±30V19 ns26 ns8A30V500V1.018nF850mOhm850 mΩ4.83mm10.67mm9.65mm-Non-RoHS Compliant-
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Through HoleThrough HoleTO-262-3 Long Leads, I2Pak, TO-262AA3I2PAK6.000006g-55°C~150°C TJTube2016Obsolete1 (Unlimited)150°C-55°C500VMOSFET (Metal Oxide)8A-1125W TcSingle-14 nsN-Channel850mOhm @ 4.8A, 10V4V @ 250μA1300pF @ 25V8A Tc63nC @ 10V23ns500V10V±20V20 ns49 ns8A20V500V1.3nF850mOhm850 mΩ9.01mm10.41mm4.7mm-Non-RoHS CompliantContains Lead
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