IRF840A

Vishay Siliconix IRF840A

Part Number:
IRF840A
Manufacturer:
Vishay Siliconix
Ventron No:
2488277-IRF840A
Description:
MOSFET N-CH 500V 8A TO-220AB
ECAD Model:
Datasheet:
IRF840A

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Specifications
Vishay Siliconix IRF840A technical specifications, attributes, parameters and parts with similar specifications to Vishay Siliconix IRF840A.
  • Mount
    Through Hole
  • Mounting Type
    Through Hole
  • Package / Case
    TO-220-3
  • Number of Pins
    3
  • Supplier Device Package
    TO-220AB
  • Weight
    6.000006g
  • Operating Temperature
    -55°C~150°C TJ
  • Packaging
    Tube
  • Published
    2011
  • Part Status
    Obsolete
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Max Operating Temperature
    150°C
  • Min Operating Temperature
    -55°C
  • Voltage - Rated DC
    500V
  • Technology
    MOSFET (Metal Oxide)
  • Current Rating
    8A
  • Number of Elements
    1
  • Number of Channels
    1
  • Power Dissipation-Max
    125W Tc
  • Element Configuration
    Single
  • Power Dissipation
    125W
  • Turn On Delay Time
    11 ns
  • FET Type
    N-Channel
  • Rds On (Max) @ Id, Vgs
    850mOhm @ 4.8A, 10V
  • Vgs(th) (Max) @ Id
    4V @ 250μA
  • Input Capacitance (Ciss) (Max) @ Vds
    1018pF @ 25V
  • Current - Continuous Drain (Id) @ 25°C
    8A Tc
  • Gate Charge (Qg) (Max) @ Vgs
    38nC @ 10V
  • Rise Time
    23ns
  • Drain to Source Voltage (Vdss)
    500V
  • Drive Voltage (Max Rds On,Min Rds On)
    10V
  • Vgs (Max)
    ±30V
  • Fall Time (Typ)
    19 ns
  • Turn-Off Delay Time
    26 ns
  • Continuous Drain Current (ID)
    8A
  • Gate to Source Voltage (Vgs)
    30V
  • Drain to Source Breakdown Voltage
    500V
  • Input Capacitance
    1.018nF
  • Drain to Source Resistance
    850mOhm
  • Rds On Max
    850 mΩ
  • Height
    9.01mm
  • Length
    10.41mm
  • Width
    4.7mm
  • Radiation Hardening
    No
  • RoHS Status
    Non-RoHS Compliant
  • Lead Free
    Contains Lead
Description
IRF840A Overview
Input capacitance, CI, is defined as the capacitance between two input terminals of an op amp with one input grounded, and the input capacitance of this device is 1018pF @ 25V.This device has a continuous drain current (ID) of [8A], which is its maximum continuous current.At a given drain-source breakdown voltage, a specified value of ID will flow. With VGS=500V, the drain-source breakdown voltage is 500V.The turn-off delay time of a device is the time it takes to charge its input capacitance before drain current can flow. The turn-off delay time of a device is 26 ns.MOSFETs have 850mOhm resistance between the drain and the source when biased into the on state by a gate-to-source voltage (VGS).During turn-on, the input capacitance of the device is charged before drain current conduction starts, so its delay time is 11 ns.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 30V volts.In order to operate this transistor, a voltage of 500V is needed from the drain to the source (Vdss).Its overall power consumption can be reduced by using drive voltage (10V).

IRF840A Features
a continuous drain current (ID) of 8A
a drain-to-source breakdown voltage of 500V voltage
the turn-off delay time is 26 ns
single MOSFETs transistor is 850mOhm
a 500V drain to source voltage (Vdss)


IRF840A Applications
There are a lot of Vishay Siliconix
IRF840A applications of single MOSFETs transistors.


Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
IRF840A More Descriptions
Power MOSFET(Vdss=500V, Rds(on)max=0.85ohm, Id=8.0A) | MOSFET N-CH 500V 8A TO-220AB
Trans MOSFET N-CH 500V 8A 3-Pin (3 Tab) TO-220AB
500 V (Min.); 8.0 A MOSF ET, Power; N-Channel; In ternational Rectifier De scription: MOSFET, Power; N-Channel; 0.85 Ohms (Ma x.); 500 V (Min.); 8.0 A (Max.); 62 degC Internat ional Rectifier Descript ion: MOSFET, Power; N-Cha nnel; 0.85 Ohms (Max.); 5 00 V (Min.); 8.0 A (Max.) ; 62 degC IRF840A
Product Comparison
The three parts on the right have similar specifications to IRF840A.
  • Image
    Part Number
    Manufacturer
    Mount
    Mounting Type
    Package / Case
    Number of Pins
    Supplier Device Package
    Weight
    Operating Temperature
    Packaging
    Published
    Part Status
    Moisture Sensitivity Level (MSL)
    Max Operating Temperature
    Min Operating Temperature
    Voltage - Rated DC
    Technology
    Current Rating
    Number of Elements
    Number of Channels
    Power Dissipation-Max
    Element Configuration
    Power Dissipation
    Turn On Delay Time
    FET Type
    Rds On (Max) @ Id, Vgs
    Vgs(th) (Max) @ Id
    Input Capacitance (Ciss) (Max) @ Vds
    Current - Continuous Drain (Id) @ 25°C
    Gate Charge (Qg) (Max) @ Vgs
    Rise Time
    Drain to Source Voltage (Vdss)
    Drive Voltage (Max Rds On,Min Rds On)
    Vgs (Max)
    Fall Time (Typ)
    Turn-Off Delay Time
    Continuous Drain Current (ID)
    Gate to Source Voltage (Vgs)
    Drain to Source Breakdown Voltage
    Input Capacitance
    Drain to Source Resistance
    Rds On Max
    Height
    Length
    Width
    Radiation Hardening
    RoHS Status
    Lead Free
    View Compare
  • IRF840A
    IRF840A
    Through Hole
    Through Hole
    TO-220-3
    3
    TO-220AB
    6.000006g
    -55°C~150°C TJ
    Tube
    2011
    Obsolete
    1 (Unlimited)
    150°C
    -55°C
    500V
    MOSFET (Metal Oxide)
    8A
    1
    1
    125W Tc
    Single
    125W
    11 ns
    N-Channel
    850mOhm @ 4.8A, 10V
    4V @ 250μA
    1018pF @ 25V
    8A Tc
    38nC @ 10V
    23ns
    500V
    10V
    ±30V
    19 ns
    26 ns
    8A
    30V
    500V
    1.018nF
    850mOhm
    850 mΩ
    9.01mm
    10.41mm
    4.7mm
    No
    Non-RoHS Compliant
    Contains Lead
    -
  • IRF840LCL
    Through Hole
    Through Hole
    TO-262-3 Long Leads, I2Pak, TO-262AA
    -
    I2PAK
    2.387001g
    -55°C~150°C TJ
    Tube
    2016
    Obsolete
    1 (Unlimited)
    150°C
    -55°C
    500V
    MOSFET (Metal Oxide)
    8A
    -
    1
    3.1W Ta 125W Tc
    Single
    -
    12 ns
    N-Channel
    850mOhm @ 4.8A, 10V
    4V @ 250μA
    1100pF @ 25V
    8A Tc
    39nC @ 10V
    25ns
    500V
    10V
    ±30V
    19 ns
    27 ns
    8A
    30V
    500V
    1.1nF
    850mOhm
    850 mΩ
    9.65mm
    10.41mm
    4.7mm
    -
    Non-RoHS Compliant
    Contains Lead
  • IRF840ASTRR
    Surface Mount
    Surface Mount
    TO-263-3, D2Pak (2 Leads Tab), TO-263AB
    3
    D2PAK
    1.437803g
    -55°C~150°C TJ
    Tape & Reel (TR)
    2016
    Obsolete
    1 (Unlimited)
    150°C
    -55°C
    -
    MOSFET (Metal Oxide)
    -
    -
    1
    3.1W Ta 125W Tc
    Single
    -
    11 ns
    N-Channel
    850mOhm @ 4.8A, 10V
    4V @ 250μA
    1018pF @ 25V
    8A Tc
    38nC @ 10V
    23ns
    500V
    10V
    ±30V
    19 ns
    26 ns
    8A
    30V
    500V
    1.018nF
    850mOhm
    850 mΩ
    4.83mm
    10.67mm
    9.65mm
    -
    Non-RoHS Compliant
    -
  • IRF840L
    Through Hole
    Through Hole
    TO-262-3 Long Leads, I2Pak, TO-262AA
    3
    I2PAK
    6.000006g
    -55°C~150°C TJ
    Tube
    2016
    Obsolete
    1 (Unlimited)
    150°C
    -55°C
    500V
    MOSFET (Metal Oxide)
    8A
    -
    1
    125W Tc
    Single
    -
    14 ns
    N-Channel
    850mOhm @ 4.8A, 10V
    4V @ 250μA
    1300pF @ 25V
    8A Tc
    63nC @ 10V
    23ns
    500V
    10V
    ±20V
    20 ns
    49 ns
    8A
    20V
    500V
    1.3nF
    850mOhm
    850 mΩ
    9.01mm
    10.41mm
    4.7mm
    -
    Non-RoHS Compliant
    Contains Lead
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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