Infineon Technologies IRF6720S2TRPBF
- Part Number:
- IRF6720S2TRPBF
- Manufacturer:
- Infineon Technologies
- Ventron No:
- 3071896-IRF6720S2TRPBF
- Description:
- MOSFET N-CH 30V 11A DIRECTFET-S1
- Datasheet:
- IRF6720S2TR(1)PBF
Infineon Technologies IRF6720S2TRPBF technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies IRF6720S2TRPBF.
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / CaseDirectFET™ Isometric S1
- Number of Pins4
- Supplier Device PackageDIRECTFET S1
- Operating Temperature-55°C~175°C TJ
- PackagingTape & Reel (TR)
- SeriesHEXFET®
- Published2009
- Part StatusObsolete
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Max Operating Temperature175°C
- Min Operating Temperature-55°C
- TechnologyMOSFET (Metal Oxide)
- Power Dissipation-Max1.7W Ta 17W Tc
- Power Dissipation17W
- Turn On Delay Time13 ns
- FET TypeN-Channel
- Rds On (Max) @ Id, Vgs8mOhm @ 11A, 10V
- Vgs(th) (Max) @ Id2.35V @ 25μA
- Input Capacitance (Ciss) (Max) @ Vds1140pF @ 15V
- Current - Continuous Drain (Id) @ 25°C11A Ta 35A Tc
- Gate Charge (Qg) (Max) @ Vgs12nC @ 4.5V
- Rise Time35ns
- Drain to Source Voltage (Vdss)30V
- Drive Voltage (Max Rds On,Min Rds On)4.5V 10V
- Vgs (Max)±20V
- Fall Time (Typ)11 ns
- Turn-Off Delay Time11 ns
- Continuous Drain Current (ID)11A
- Gate to Source Voltage (Vgs)20V
- Drain to Source Breakdown Voltage30V
- Input Capacitance1.14nF
- Drain to Source Resistance12.8mOhm
- Rds On Max8 mΩ
- Height558.8μm
- Length4.826mm
- Width3.95mm
- Radiation HardeningNo
- RoHS StatusRoHS Compliant
IRF6720S2TRPBF Overview
Input capacitance, CI, is defined as the capacitance between two input terminals of an op amp with one input grounded, and the input capacitance of this device is 1140pF @ 15V.This device has a continuous drain current (ID) of [11A], which is its maximum continuous current.At a given drain-source breakdown voltage, a specified value of ID will flow. With VGS=30V, the drain-source breakdown voltage is 30V.The turn-off delay time of a device is the time it takes to charge its input capacitance before drain current can flow. The turn-off delay time of a device is 11 ns.MOSFETs have 12.8mOhm resistance between the drain and the source when biased into the on state by a gate-to-source voltage (VGS).During turn-on, the input capacitance of the device is charged before drain current conduction starts, so its delay time is 13 ns.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 20V volts.In order to operate this transistor, a voltage of 30V is needed from the drain to the source (Vdss).Its overall power consumption can be reduced by using drive voltage (4.5V 10V).
IRF6720S2TRPBF Features
a continuous drain current (ID) of 11A
a drain-to-source breakdown voltage of 30V voltage
the turn-off delay time is 11 ns
single MOSFETs transistor is 12.8mOhm
a 30V drain to source voltage (Vdss)
IRF6720S2TRPBF Applications
There are a lot of Infineon Technologies
IRF6720S2TRPBF applications of single MOSFETs transistors.
Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Input capacitance, CI, is defined as the capacitance between two input terminals of an op amp with one input grounded, and the input capacitance of this device is 1140pF @ 15V.This device has a continuous drain current (ID) of [11A], which is its maximum continuous current.At a given drain-source breakdown voltage, a specified value of ID will flow. With VGS=30V, the drain-source breakdown voltage is 30V.The turn-off delay time of a device is the time it takes to charge its input capacitance before drain current can flow. The turn-off delay time of a device is 11 ns.MOSFETs have 12.8mOhm resistance between the drain and the source when biased into the on state by a gate-to-source voltage (VGS).During turn-on, the input capacitance of the device is charged before drain current conduction starts, so its delay time is 13 ns.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 20V volts.In order to operate this transistor, a voltage of 30V is needed from the drain to the source (Vdss).Its overall power consumption can be reduced by using drive voltage (4.5V 10V).
IRF6720S2TRPBF Features
a continuous drain current (ID) of 11A
a drain-to-source breakdown voltage of 30V voltage
the turn-off delay time is 11 ns
single MOSFETs transistor is 12.8mOhm
a 30V drain to source voltage (Vdss)
IRF6720S2TRPBF Applications
There are a lot of Infineon Technologies
IRF6720S2TRPBF applications of single MOSFETs transistors.
Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
IRF6720S2TRPBF More Descriptions
MOSFET N-CH 30V 11A DIRECTFET-S1
A 30V Single N-Channel HEXFET Power MOSFET in a DirectFET S1 package rated at 11 amperes optimized with low on resistance. Shipped in Tape and Reel only. Part is not available in bulk, TR is implied in part number.
N Channel, MOSFET, 30V, 11A, DirectFET S1; Transistor Polarity:N Channel; Continuous Drain Current Id:11A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.006ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:2V ;RoHS Compliant: Yes
A 30V Single N-Channel HEXFET Power MOSFET in a DirectFET S1 package rated at 11 amperes optimized with low on resistance. Shipped in Tape and Reel only. Part is not available in bulk, TR is implied in part number.
N Channel, MOSFET, 30V, 11A, DirectFET S1; Transistor Polarity:N Channel; Continuous Drain Current Id:11A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.006ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:2V ;RoHS Compliant: Yes
The three parts on the right have similar specifications to IRF6720S2TRPBF.
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ImagePart NumberManufacturerMountMounting TypePackage / CaseNumber of PinsSupplier Device PackageOperating TemperaturePackagingSeriesPublishedPart StatusMoisture Sensitivity Level (MSL)Max Operating TemperatureMin Operating TemperatureTechnologyPower Dissipation-MaxPower DissipationTurn On Delay TimeFET TypeRds On (Max) @ Id, VgsVgs(th) (Max) @ IdInput Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25°CGate Charge (Qg) (Max) @ VgsRise TimeDrain to Source Voltage (Vdss)Drive Voltage (Max Rds On,Min Rds On)Vgs (Max)Fall Time (Typ)Turn-Off Delay TimeContinuous Drain Current (ID)Gate to Source Voltage (Vgs)Drain to Source Breakdown VoltageInput CapacitanceDrain to Source ResistanceRds On MaxHeightLengthWidthRadiation HardeningRoHS StatusSurface MountTransistor Element MaterialJESD-609 CodeNumber of TerminationsECCN CodeTerminal FinishAdditional FeatureHTS CodeTerminal PositionTerminal FormPeak Reflow Temperature (Cel)Time@Peak Reflow Temperature-Max (s)JESD-30 CodeQualification StatusNumber of ElementsConfigurationOperating ModeCase ConnectionTransistor ApplicationDrain Current-Max (Abs) (ID)Drain-source On Resistance-MaxPulsed Drain Current-Max (IDM)DS Breakdown Voltage-MinAvalanche Energy Rating (Eas)View Compare
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IRF6720S2TRPBFSurface MountSurface MountDirectFET™ Isometric S14DIRECTFET S1-55°C~175°C TJTape & Reel (TR)HEXFET®2009Obsolete1 (Unlimited)175°C-55°CMOSFET (Metal Oxide)1.7W Ta 17W Tc17W13 nsN-Channel8mOhm @ 11A, 10V2.35V @ 25μA1140pF @ 15V11A Ta 35A Tc12nC @ 4.5V35ns30V4.5V 10V±20V11 ns11 ns11A20V30V1.14nF12.8mOhm8 mΩ558.8μm4.826mm3.95mmNoRoHS Compliant-------------------------
-
-Surface MountTO-263-3, D2Pak (2 Leads Tab), TO-263AB---55°C~175°C TJTubeHEXFET®1998Obsolete1 (Unlimited)--MOSFET (Metal Oxide)3.8W Ta 110W Tc--P-Channel290m Ω @ 6.6A, 10V4V @ 250μA860pF @ 25V13A Tc66nC @ 10V-150V10V±20V------------Non-RoHS CompliantYESSILICONe02EAR99Tin/Lead (Sn/Pb)AVALANCHE RATED, HIGH RELIABILITY8541.29.00.95SINGLEGULL WING22530R-PSSO-G2Not Qualified1SINGLE WITH BUILT-IN DIODEENHANCEMENT MODEDRAINSWITCHING13A0.29Ohm44A150V310 mJ
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-Through HoleTO-262-3 Long Leads, I2Pak, TO-262AA-TO-262-55°C~175°C TJTubeHEXFET®2004Obsolete1 (Unlimited)--MOSFET (Metal Oxide)82W Tc--N-Channel300mOhm @ 5.4A, 10V4V @ 250μA575pF @ 25V9.3A Tc35nC @ 10V-200V10V±20V------------Non-RoHS Compliant------------------------
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Surface MountSurface MountTO-263-3, D2Pak (2 Leads Tab), TO-263AB-D2PAK-55°C~150°C TJTape & Reel (TR)-2016Obsolete1 (Unlimited)--MOSFET (Metal Oxide)3.1W Ta 74W Tc--N-Channel450mOhm @ 5.1A, 10V4V @ 250μA770pF @ 25V8.1A Tc41nC @ 10V-250V10V±20V--8.1A--770pF-450 mΩ----Non-RoHS Compliant------------------------
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