IRF6720S2TRPBF

Infineon Technologies IRF6720S2TRPBF

Part Number:
IRF6720S2TRPBF
Manufacturer:
Infineon Technologies
Ventron No:
3071896-IRF6720S2TRPBF
Description:
MOSFET N-CH 30V 11A DIRECTFET-S1
ECAD Model:
Datasheet:
IRF6720S2TR(1)PBF

Quick Request Quote

Please send RFQ , We will respond immediately.

Part Number
Quantity
Company
E-mail
Phone
Comments
Specifications
Infineon Technologies IRF6720S2TRPBF technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies IRF6720S2TRPBF.
  • Mount
    Surface Mount
  • Mounting Type
    Surface Mount
  • Package / Case
    DirectFET™ Isometric S1
  • Number of Pins
    4
  • Supplier Device Package
    DIRECTFET S1
  • Operating Temperature
    -55°C~175°C TJ
  • Packaging
    Tape & Reel (TR)
  • Series
    HEXFET®
  • Published
    2009
  • Part Status
    Obsolete
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Max Operating Temperature
    175°C
  • Min Operating Temperature
    -55°C
  • Technology
    MOSFET (Metal Oxide)
  • Power Dissipation-Max
    1.7W Ta 17W Tc
  • Power Dissipation
    17W
  • Turn On Delay Time
    13 ns
  • FET Type
    N-Channel
  • Rds On (Max) @ Id, Vgs
    8mOhm @ 11A, 10V
  • Vgs(th) (Max) @ Id
    2.35V @ 25μA
  • Input Capacitance (Ciss) (Max) @ Vds
    1140pF @ 15V
  • Current - Continuous Drain (Id) @ 25°C
    11A Ta 35A Tc
  • Gate Charge (Qg) (Max) @ Vgs
    12nC @ 4.5V
  • Rise Time
    35ns
  • Drain to Source Voltage (Vdss)
    30V
  • Drive Voltage (Max Rds On,Min Rds On)
    4.5V 10V
  • Vgs (Max)
    ±20V
  • Fall Time (Typ)
    11 ns
  • Turn-Off Delay Time
    11 ns
  • Continuous Drain Current (ID)
    11A
  • Gate to Source Voltage (Vgs)
    20V
  • Drain to Source Breakdown Voltage
    30V
  • Input Capacitance
    1.14nF
  • Drain to Source Resistance
    12.8mOhm
  • Rds On Max
    8 mΩ
  • Height
    558.8μm
  • Length
    4.826mm
  • Width
    3.95mm
  • Radiation Hardening
    No
  • RoHS Status
    RoHS Compliant
Description
IRF6720S2TRPBF Overview
Input capacitance, CI, is defined as the capacitance between two input terminals of an op amp with one input grounded, and the input capacitance of this device is 1140pF @ 15V.This device has a continuous drain current (ID) of [11A], which is its maximum continuous current.At a given drain-source breakdown voltage, a specified value of ID will flow. With VGS=30V, the drain-source breakdown voltage is 30V.The turn-off delay time of a device is the time it takes to charge its input capacitance before drain current can flow. The turn-off delay time of a device is 11 ns.MOSFETs have 12.8mOhm resistance between the drain and the source when biased into the on state by a gate-to-source voltage (VGS).During turn-on, the input capacitance of the device is charged before drain current conduction starts, so its delay time is 13 ns.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 20V volts.In order to operate this transistor, a voltage of 30V is needed from the drain to the source (Vdss).Its overall power consumption can be reduced by using drive voltage (4.5V 10V).

IRF6720S2TRPBF Features
a continuous drain current (ID) of 11A
a drain-to-source breakdown voltage of 30V voltage
the turn-off delay time is 11 ns
single MOSFETs transistor is 12.8mOhm
a 30V drain to source voltage (Vdss)


IRF6720S2TRPBF Applications
There are a lot of Infineon Technologies
IRF6720S2TRPBF applications of single MOSFETs transistors.


Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
IRF6720S2TRPBF More Descriptions
MOSFET N-CH 30V 11A DIRECTFET-S1
A 30V Single N-Channel HEXFET Power MOSFET in a DirectFET S1 package rated at 11 amperes optimized with low on resistance. Shipped in Tape and Reel only. Part is not available in bulk, TR is implied in part number.
N Channel, MOSFET, 30V, 11A, DirectFET S1; Transistor Polarity:N Channel; Continuous Drain Current Id:11A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.006ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:2V ;RoHS Compliant: Yes
Product Comparison
The three parts on the right have similar specifications to IRF6720S2TRPBF.
  • Image
    Part Number
    Manufacturer
    Mount
    Mounting Type
    Package / Case
    Number of Pins
    Supplier Device Package
    Operating Temperature
    Packaging
    Series
    Published
    Part Status
    Moisture Sensitivity Level (MSL)
    Max Operating Temperature
    Min Operating Temperature
    Technology
    Power Dissipation-Max
    Power Dissipation
    Turn On Delay Time
    FET Type
    Rds On (Max) @ Id, Vgs
    Vgs(th) (Max) @ Id
    Input Capacitance (Ciss) (Max) @ Vds
    Current - Continuous Drain (Id) @ 25°C
    Gate Charge (Qg) (Max) @ Vgs
    Rise Time
    Drain to Source Voltage (Vdss)
    Drive Voltage (Max Rds On,Min Rds On)
    Vgs (Max)
    Fall Time (Typ)
    Turn-Off Delay Time
    Continuous Drain Current (ID)
    Gate to Source Voltage (Vgs)
    Drain to Source Breakdown Voltage
    Input Capacitance
    Drain to Source Resistance
    Rds On Max
    Height
    Length
    Width
    Radiation Hardening
    RoHS Status
    Surface Mount
    Transistor Element Material
    JESD-609 Code
    Number of Terminations
    ECCN Code
    Terminal Finish
    Additional Feature
    HTS Code
    Terminal Position
    Terminal Form
    Peak Reflow Temperature (Cel)
    Time@Peak Reflow Temperature-Max (s)
    JESD-30 Code
    Qualification Status
    Number of Elements
    Configuration
    Operating Mode
    Case Connection
    Transistor Application
    Drain Current-Max (Abs) (ID)
    Drain-source On Resistance-Max
    Pulsed Drain Current-Max (IDM)
    DS Breakdown Voltage-Min
    Avalanche Energy Rating (Eas)
    View Compare
  • IRF6720S2TRPBF
    IRF6720S2TRPBF
    Surface Mount
    Surface Mount
    DirectFET™ Isometric S1
    4
    DIRECTFET S1
    -55°C~175°C TJ
    Tape & Reel (TR)
    HEXFET®
    2009
    Obsolete
    1 (Unlimited)
    175°C
    -55°C
    MOSFET (Metal Oxide)
    1.7W Ta 17W Tc
    17W
    13 ns
    N-Channel
    8mOhm @ 11A, 10V
    2.35V @ 25μA
    1140pF @ 15V
    11A Ta 35A Tc
    12nC @ 4.5V
    35ns
    30V
    4.5V 10V
    ±20V
    11 ns
    11 ns
    11A
    20V
    30V
    1.14nF
    12.8mOhm
    8 mΩ
    558.8μm
    4.826mm
    3.95mm
    No
    RoHS Compliant
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • IRF6215S
    -
    Surface Mount
    TO-263-3, D2Pak (2 Leads Tab), TO-263AB
    -
    -
    -55°C~175°C TJ
    Tube
    HEXFET®
    1998
    Obsolete
    1 (Unlimited)
    -
    -
    MOSFET (Metal Oxide)
    3.8W Ta 110W Tc
    -
    -
    P-Channel
    290m Ω @ 6.6A, 10V
    4V @ 250μA
    860pF @ 25V
    13A Tc
    66nC @ 10V
    -
    150V
    10V
    ±20V
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    Non-RoHS Compliant
    YES
    SILICON
    e0
    2
    EAR99
    Tin/Lead (Sn/Pb)
    AVALANCHE RATED, HIGH RELIABILITY
    8541.29.00.95
    SINGLE
    GULL WING
    225
    30
    R-PSSO-G2
    Not Qualified
    1
    SINGLE WITH BUILT-IN DIODE
    ENHANCEMENT MODE
    DRAIN
    SWITCHING
    13A
    0.29Ohm
    44A
    150V
    310 mJ
  • IRF630NL
    -
    Through Hole
    TO-262-3 Long Leads, I2Pak, TO-262AA
    -
    TO-262
    -55°C~175°C TJ
    Tube
    HEXFET®
    2004
    Obsolete
    1 (Unlimited)
    -
    -
    MOSFET (Metal Oxide)
    82W Tc
    -
    -
    N-Channel
    300mOhm @ 5.4A, 10V
    4V @ 250μA
    575pF @ 25V
    9.3A Tc
    35nC @ 10V
    -
    200V
    10V
    ±20V
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    Non-RoHS Compliant
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • IRF634STRR
    Surface Mount
    Surface Mount
    TO-263-3, D2Pak (2 Leads Tab), TO-263AB
    -
    D2PAK
    -55°C~150°C TJ
    Tape & Reel (TR)
    -
    2016
    Obsolete
    1 (Unlimited)
    -
    -
    MOSFET (Metal Oxide)
    3.1W Ta 74W Tc
    -
    -
    N-Channel
    450mOhm @ 5.1A, 10V
    4V @ 250μA
    770pF @ 25V
    8.1A Tc
    41nC @ 10V
    -
    250V
    10V
    ±20V
    -
    -
    8.1A
    -
    -
    770pF
    -
    450 mΩ
    -
    -
    -
    -
    Non-RoHS Compliant
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

Latest News

  • cost

    Help you to save your cost and time.

  • package

    Reliable package for your goods.

  • fast

    Fast Reliable Delivery to save time.

  • service

    Quality premium after-sale service.